AON7408 N-Channel MOSFET 30V 10A/18A Equivalent & Substitute Parts

Part Overview

The AON7408 is an N-Channel enhancement-mode MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 10A at Ta (ambient temperature) and 18A at Tc (case temperature). The device is housed in an 8-DFN-EP (3x3) surface mount package and is designed for general-purpose switching and amplification applications in power management circuits.

The AON7408 carries a product status of "Not For New Designs," indicating that while the part remains available in inventory (35,200 pieces), Alpha & Omega Semiconductor Inc. does not recommend its use in new circuit designs. This status necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility while offering active product status or superior performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	10	A
Continuous Drain Current @ 25°C (Tc)	18	A
RDS(on) Max @ 10A, 10V	20	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.6	V
Gate Charge (Qg) @ 4.5V	8.6	nC
Input Capacitance (Ciss) @ 15V	448	pF
Power Dissipation (Ta)	3.1	W
Power Dissipation (Tc)	11	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-DFN-EP (3x3)	Surface Mount
FET Type	N-Channel	Enhancement Mode
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the AON7408 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must meet or exceed 10A at Ta and 18A at Tc
RDS(on) Max: Must not exceed 20mOhm at the specified gate voltage and current
Gate Threshold Voltage (Vgs(th)): Must fall within acceptable switching range (typically 2.0V to 2.6V)
Package Type: Must be compatible with 8-DFN-EP (3x3) or equivalent surface mount footprint
Operating Temperature Range: Must support -55°C to 150°C
Compliance: RoHS3 compliant, MSL 1, REACH unaffected

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching; values between 4.3nC and 20nC are acceptable
Input Capacitance (Ciss): Values between 295pF and 650pF maintain circuit performance
Power Dissipation: Thermal performance at both Ta and Tc must support application requirements

Substitute parts are grouped into two categories:

Category A – Direct Electrical Equivalents (30V Rating, 8A–10A Minimum Current): Parts that maintain the 30V Vdss rating and support continuous drain current of 8A or greater at Ta, with RDS(on) specifications comparable to or better than the AON7408. These parts are suitable for direct replacement in existing designs.

Category B – Enhanced Performance Alternatives (Higher Voltage or Current Rating): Parts that exceed the AON7408 specifications in voltage rating (40V) or current capacity, offering improved thermal performance and lower on-resistance. These parts provide design margin and are suitable for new designs where the higher ratings do not create cost or space constraints.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Ta (A)	Id @ Tc (A)	RDS(on) Max (mOhm)	Vgs(th) @ 250µA (V)	Qg @ 10V (nC)	Ciss @ 15V (pF)	Package	Product Status
AON7408	Alpha & Omega	30	10	18	20	2.6	8.6	448	8-DFN-EP (3x3)	Not For New Designs
AONR32320C	Alpha & Omega	30	9.5	12	21	2.3	20	650	8-DFN-EP (3x3)	Active
BSZ040N04LSGATMA1	Infineon	40	18	40	4	2	64	5100	PG-TSDSON-8	Active
DMN3018SFG-13	Diodes Inc.	30	8.5	—	21	2.1	13.2	697	PowerDI3333-8	Active
DMN3024SFG-13	Diodes Inc.	30	7.5	—	23	2.4	10.5	479	PowerDI3333-8	Active
DMN3025LFG-7	Diodes Inc.	30	7.5	—	18	2	11.6	605	PowerDI3333-8	Active
PJQ4414P_R2_00001	Panjit	30	8	25	18	2.5	4.3	392	DFN3333-8	Active
RQ3E080BNTB	Rohm	30	8	—	15.2	2.5	14.5	660	8-HSMT (3.2x3)	Active
RQ3E080GNTB	Rohm	30	8	15	16.7	2.5	5.8	295	8-HSMT (3.2x3)	Active
RQ3E100MNTB1	Rohm	30	10	—	12.3	2.5	9.9	520	8-HSMT (3.2x3)	Not For New Designs

Engineering Selection Recommendations

For Direct Replacement in Existing Designs:

The AONR32320C (Alpha & Omega Semiconductor Inc.) is the primary recommended substitute. It maintains the same 30V Vdss rating, operates within the same temperature range (-55°C to 150°C), and is housed in the identical 8-DFN-EP (3x3) package. The AONR32320C carries Active product status, ensuring long-term availability and support. While continuous drain current at Ta is slightly lower (9.5A versus 10A), the part meets the 12A Tc specification and maintains RDS(on) performance within acceptable limits (21mOhm versus 20mOhm). Both parts are RoHS3 compliant with MSL 1 rating.

The PJQ4414P_R2_00001 (Panjit International Inc.) offers superior electrical performance with lower RDS(on) (18mOhm) and lower gate charge (4.3nC), supporting higher case temperature current (25A at Tc). The part is housed in a DFN3333-8 package, which is mechanically compatible with the AON7408 footprint. Active product status and full compliance certifications make this part suitable for new designs requiring improved thermal performance.

For New Designs with Enhanced Performance Requirements:

The RQ3E100MNTB1 (Rohm Semiconductor) provides exact current matching (10A at Ta) with superior RDS(on) performance (12.3mOhm) in an 8-HSMT (3.2x3) package. Although this part carries "Not For New Designs" status, it demonstrates the performance envelope achievable within the 30V class. The RQ3E080GNTB variant offers lower gate charge (5.8nC) and reduced input capacitance (295pF), beneficial for high-frequency switching applications.

The BSZ040N04LSGATMA1 (Infineon Technologies OptiMOS™ series) represents a higher-voltage alternative (40V Vdss) with significantly improved current handling (18A at Ta, 40A at Tc) and substantially lower RDS(on) (4mOhm). This part is suitable for applications where voltage margin and thermal performance are critical design factors. The PG-TSDSON-8 package differs from the AON7408 footprint and requires PCB layout modification.

Compliance and Certification:

All recommended substitute parts maintain RoHS3 compliance, MSL 1 moisture sensitivity rating, and REACH unaffected status, matching the AON7408 regulatory profile. Operating temperature ranges uniformly support -55°C to 150°C operation across all candidates.

Frequently Asked Questions (FAQ)

Q: Can the AONR32320C directly replace the AON7408 without PCB modification?

A: Yes. The AONR32320C is housed in the identical 8-DFN-EP (3x3) package with matching pin configuration and footprint. No PCB layout changes are required. The part operates within the same voltage and temperature specifications, making it a direct mechanical and electrical substitute.

Q: Why does the AONR32320C show lower continuous drain current (9.5A at Ta) than the AON7408 (10A at Ta)?

A: The AONR32320C is rated for 9.5A at Ta and 12A at Tc, compared to the AON7408's 10A at Ta and 18A at Tc. For applications requiring the full 10A continuous current at ambient temperature, the PJQ4414P_R2_00001 (8A at Ta, 25A at Tc) or RQ3E100MNTB1 (10A at Ta) are more appropriate selections. The choice depends on whether the application operates primarily at ambient or case temperature conditions.

Q: What is the significance of the different package designations (8-DFN-EP, PowerDI3333-8, 8-HSMT)?

A: All three package types are 8-pin surface mount packages with exposed thermal pads, designed for similar power dissipation applications. The 8-DFN-EP (3x3) and PowerDI3333-8 packages are mechanically compatible and share identical footprints. The 8-HSMT (3.2x3) package used by Rohm parts has slightly different dimensions and thermal pad configuration, requiring verification of PCB layout compatibility before substitution. The Infineon BSZ040N04LSGATMA1 uses PG-TSDSON-8, which is not footprint-compatible with the AON7408.

Q: How do gate charge (Qg) and input capacitance (Ciss) differences affect circuit performance?

A: Gate charge and input capacitance determine the speed and energy required to switch the MOSFET on and off. The AON7408 has a gate charge of 8.6nC at 4.5V. Substitute parts range from 4.3nC (PJQ4414P_R2_00001) to 64nC (BSZ040N04LSGATMA1). Lower values enable faster switching and reduced gate drive power, beneficial in high-frequency applications. Higher values may require stronger gate drive circuits but do not prevent substitution in standard switching applications. Input capacitance similarly affects switching speed; the AON7408's 448pF is moderate within the substitute range (295pF to 5100pF).

Q: Is the BSZ040N04LSGATMA1 suitable as a substitute despite its 40V rating?

A: The BSZ040N04LSGATMA1 is electrically compatible for applications designed for 30V operation, as a 40V-rated device safely handles 30V signals with additional voltage margin. However, the higher voltage rating does not provide functional advantage in 30V circuits and may introduce unnecessary cost. The PG-TSDSON-8 package is not footprint-compatible with the AON7408, requiring PCB redesign. This part is recommended only when enhanced current handling (40A at Tc) or lower on-resistance (4mOhm) provides specific design benefits.

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: Ta (ambient temperature) ratings assume the device operates in free air at 25°C without external cooling. Tc (case temperature) ratings assume the device is mounted on a PCB with thermal management (copper pour, heat sink contact) that maintains the junction at a lower temperature. The AON7408 supports 10A at Ta and 18A at Tc, indicating that with proper thermal design, the device can safely conduct 80% more current. Substitute part selection should consider whether the application provides thermal management infrastructure.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance certification, matching the AON7408's regulatory status. All parts also maintain MSL 1 (unlimited moisture sensitivity level) and REACH unaffected status, ensuring compatibility with standard manufacturing and storage practices.

Q: Which substitute offers the best on-resistance (RDS(on)) performance?

A: The BSZ040N04LSGATMA1 (Infineon) offers the lowest RDS(on) at 4mOhm, followed by the RQ3E100MNTB1 (Rohm) at 12.3mOhm. For 30V-rated devices with similar current capacity, the RQ3E100MNTB1 provides the best on-resistance within the standard package class. Lower on-resistance reduces power dissipation and heat generation, beneficial in high-current or continuous-duty applications.

Q: Can I use multiple substitute parts interchangeably in production?

A: Substitution between parts with different packages (8-DFN-EP, PowerDI3333-8, 8-HSMT) requires PCB layout verification and potential redesign. Parts with identical packages (AONR32320C and AON7408 both use 8-DFN-EP) can be used interchangeably without layout changes. For production flexibility, specify parts with identical package types to minimize supply chain complexity and manufacturing risk.

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