AON7404 N-Channel MOSFET 20V 20A/40A Equivalent & Substitute Parts

Part Overview

The AON7404 is an N-Channel MOSFET rated for 20V drain-to-source voltage with continuous drain current of 20A (Ta) and 40A (Tc) in an 8-DFN-EP (3x3) surface mount package. This device is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product line. Identifying equivalent and substitute parts is necessary for ongoing production support, maintenance applications, and legacy system repairs where the original part number may be unavailable or where active product alternatives offer improved availability and performance characteristics.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 40A (Tc)	A
Rds On (Max) @ Id, Vgs	6 mOhm @ 20A, 4.5V	mOhm
Vgs(th) (Max) @ Id	1.6	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	43	nC @ 10V
Vgs (Max)	±12	V
Input Capacitance (Ciss) (Max) @ Vds	4630	pF @ 10V
Power Dissipation (Max)	3.1W (Ta), 40W (Tc)	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Supplier Device Package	8-DFN-EP (3x3)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the AON7404 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 20V
Gate-Source Voltage (Vgs): Must support ±12V maximum rating
Operating Temperature Range: Must span -55°C to 150°C (TJ)
Threshold Voltage (Vgs(th)): Must be compatible with 1.6V maximum specification
On-State Resistance (Rds On): Must not exceed 6 mOhm at specified conditions to maintain thermal performance

Mechanical Compatibility Criteria:

Mounting Type: Surface Mount required
Package Type: 8-DFN-EP (3x3) or equivalent footprint compatibility
Continuous Drain Current: Must support minimum 20A (Ta) operation

Compliance Criteria:

RoHS3 Compliance required
MSL Level 1 (Unlimited) required
REACH Unaffected status required

Two substitute parts meet these criteria with varying performance characteristics and availability status.

Parameter Comparison

Parameter	AON7404 (Main)	AON7404G (Substitute)	SI7106DN-T1-GE3 (Substitute)
Manufacturer	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Vishay Siliconix
Product Status	Not For New Designs	Active	Active
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V	20V	20V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 40A (Tc)	20A (Ta), 20A (Tc)	12.5A (Ta)
Rds On (Max) @ Id, Vgs	6 mOhm @ 20A, 4.5V	5.3 mOhm @ 20A, 4.5V	6.2 mOhm @ 19.5A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250µA	1.25V @ 250µA	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10V	45 nC @ 4.5V	27 nC @ 4.5V
Vgs (Max)	±12V	±12V	±12V
Power Dissipation (Max)	3.1W (Ta), 40W (Tc)	5W (Ta), 28W (Tc)	1.5W (Ta)
Operating Temperature	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	8-DFN-EP (3x3)	8-DFN-EP (3x3)	PowerPAK® 1212-8
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Inventory Status	10265 Pcs New Original In Stock	120300 Pcs New Original In Stock	64439 Pcs New Original In Stock

Engineering Selection Recommendations

AON7404G (Alpha & Omega Semiconductor Inc.)

The AON7404G is the direct manufacturer-recommended substitute for the AON7404. Both devices share identical electrical specifications for Vdss (20V), Vgs (±12V), and operating temperature range (-55°C to 150°C). The AON7404G maintains the same 8-DFN-EP (3x3) package footprint, ensuring mechanical compatibility without PCB redesign. The AON7404G is classified as "Active" product status, providing long-term availability and supply chain stability. On-state resistance is improved at 5.3 mOhm compared to 6 mOhm, and threshold voltage is lower at 1.25V, indicating superior switching characteristics. The primary trade-off is reduced continuous drain current at Tc (20A versus 40A), which is acceptable for applications not requiring the maximum thermal case current rating. This substitute is recommended for new production and ongoing support of existing designs.

SI7106DN-T1-GE3 (Vishay Siliconix)

The SI7106DN-T1-GE3 is a cross-manufacturer substitute that meets core electrical requirements: 20V Vdss, ±12V Vgs, and -55°C to 150°C operating temperature. This device is based on TrenchFET® technology and is classified as "Active" product status. The SI7106DN-T1-GE3 features lower gate charge (27 nC) compared to the AON7404 (43 nC), resulting in faster switching performance. However, this substitute operates in a different package format (PowerPAK® 1212-8 versus 8-DFN-EP 3x3), requiring PCB layout modification. Continuous drain current is limited to 12.5A (Ta), which is below the AON7404 specification of 20A (Ta). This substitute is suitable for applications where current requirements do not exceed 12.5A and where package footprint changes are acceptable. Cross-manufacturer substitution introduces supply chain diversification but requires design validation.

Frequently Asked Questions (FAQ)

Q: Can the AON7404G be used as a direct replacement for the AON7404 without PCB modification?

A: Yes. The AON7404G maintains identical package geometry (8-DFN-EP 3x3) and electrical specifications for voltage ratings and operating temperature. No PCB layout changes are required. The AON7404G is the manufacturer-recommended substitute.

Q: What is the primary limitation of the SI7106DN-T1-GE3 as a substitute?

A: The SI7106DN-T1-GE3 operates in a PowerPAK® 1212-8 package, which differs from the 8-DFN-EP (3x3) footprint of the AON7404. PCB redesign is necessary. Additionally, continuous drain current is limited to 12.5A (Ta), below the AON7404 specification of 20A (Ta). This substitute is suitable only for applications with lower current requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both the AON7404G and SI7106DN-T1-GE3 are ROHS3 Compliant with MSL Level 1 (Unlimited) and REACH Unaffected status, matching the compliance profile of the AON7404.

Q: What is the difference in on-state resistance between the AON7404 and its substitutes?

A: The AON7404 specifies 6 mOhm (Rds On Max @ 20A, 4.5V). The AON7404G improves this to 5.3 mOhm, reducing conduction losses. The SI7106DN-T1-GE3 specifies 6.2 mOhm at 19.5A, 4.5V, which is comparable but measured at a different current level.

Q: Which substitute offers the best availability?

A: The AON7404G has the highest inventory level at 120,300 pieces in stock, compared to 64,439 pieces for the SI7106DN-T1-GE3 and 10,265 pieces for the original AON7404. The AON7404G is recommended for supply chain continuity.

Q: Can the AON7404 be used in new designs?

A: No. The AON7404 is classified as "Not For New Designs." The AON7404G (Active status) is the appropriate choice for new product development.

Q: What is the gate charge difference, and does it affect circuit performance?

A: The AON7404 specifies 43 nC @ 10V, while the AON7404G specifies 45 nC @ 4.5V (different measurement conditions). The SI7106DN-T1-GE3 specifies 27 nC @ 4.5V, indicating faster switching transitions. Lower gate charge reduces driver power dissipation and enables higher switching frequencies.

Q: Are thermal performance characteristics equivalent across all three parts?

A: No. The AON7404 supports 40W (Tc) power dissipation, while the AON7404G supports 28W (Tc), and the SI7106DN-T1-GE3 supports only 1.5W (Ta). Thermal design must account for these differences. The AON7404 and AON7404G are suitable for higher power applications; the SI7106DN-T1-GE3 is limited to lower power circuits.

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