AON7402 N-Channel MOSFET 30V 13.5A/39A Equivalent & Substitute Parts

Part Overview

The AON7402 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 13.5A at Ta and 39A at Tc. The device is housed in an 8-DFN-EP (3x3) surface mount package and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and redesign efforts.

Substiute Parts

AON7402
Alpha & Omega Semiconductor Inc.In Stock: 23339AON7402 Datasheet
AON7402
Current Part
AON7380
Alpha & Omega Semiconductor Inc.In Stock: 120249AON7380 Datasheet
AON7380
MFR Recommended
BSZ100N03LSGATMA1
Infineon TechnologiesIn Stock: 5440BSZ100N03LSGATMA1 Datasheet
BSZ100N03LSGATMA1
MFR Recommended
BSZ100N03MSGATMA1
Infineon TechnologiesIn Stock: 11004BSZ100N03MSGATMA1 Datasheet
BSZ100N03MSGATMA1
MFR Recommended
BSZ130N03LSGATMA1
Infineon TechnologiesIn Stock: 29951BSZ130N03LSGATMA1 Datasheet
BSZ130N03LSGATMA1
MFR Recommended
BSZ130N03MSGATMA1
Infineon TechnologiesIn Stock: 17169BSZ130N03MSGATMA1 Datasheet
BSZ130N03MSGATMA1
MFR Recommended
CSD17308Q3
Texas InstrumentsIn Stock: 27487CSD17308Q3 Datasheet
CSD17308Q3
MFR Recommended
CSD17579Q3A
Texas InstrumentsIn Stock: 25410CSD17579Q3A Datasheet
CSD17579Q3A
MFR Recommended
CSD17579Q3AT
Texas InstrumentsIn Stock: 1431CSD17579Q3AT Datasheet
CSD17579Q3AT
MFR Recommended
NTTFS4C13NTAG
onsemiIn Stock: 50493NTTFS4C13NTAG Datasheet
NTTFS4C13NTAG
MFR Recommended
RQ3E100BNTB
Rohm SemiconductorIn Stock: 121946RQ3E100BNTB Datasheet
RQ3E100BNTB
MFR Recommended
RQ3E120BNTB
Rohm SemiconductorIn Stock: 3903RQ3E120BNTB Datasheet
RQ3E120BNTB
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 13.5 A
Continuous Drain Current @ 25°C (Tc) 39 A
Rds On (Max) @ Id, Vgs 10 mOhm @ 20A, 10V
Gate Charge (Qg) @ Vgs 17.8 nC @ 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package 8-DFN-EP (3x3)
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the AON7402 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Continuous Drain Current: Must support minimum 13.5A at Ta or equivalent thermal performance
  • Gate Threshold Voltage (Vgs(th)): Must be compatible within ±20V maximum gate voltage specification
  • Operating Temperature Range: Must support -55°C to 150°C (TJ)
  • Mounting Type: Must be Surface Mount
  • Package Compatibility: Mechanical and electrical compatibility with 8-DFN-EP footprint or equivalent 8-pin power package

The substitute parts listed below meet these criteria and are sourced from active product lines (Alpha & Omega Semiconductor Inc., Infineon Technologies, Texas Instruments, onsemi, and Rohm Semiconductor). All substitutes maintain electrical equivalence within the specified parameter ranges and support the same operating conditions as the AON7402.

Parameter Comparison

Parameter AON7402 AON7380 BSZ100N03LSGATMA1 BSZ100N03MSGATMA1 BSZ130N03LSGATMA1 BSZ130N03MSGATMA1 CSD17308Q3 CSD17579Q3A CSD17579Q3AT NTTFS4C13NTAG RQ3E100BNTB
Manufacturer Alpha & Omega Alpha & Omega Infineon Infineon Infineon Infineon Texas Instruments Texas Instruments Texas Instruments onsemi Rohm
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Vdss (V) 30 30 30 30 30 30 30 30 30 30 30
Id @ Ta (A) 13.5 12 10 10 9 14 20 20 7.2 10
Id @ Tc (A) 39 24 40 40 35 35 44
Rds On (Max) @ Id, Vgs (mOhm) 10 @ 20A, 10V 6.8 @ 20A, 10V 10 @ 20A, 10V 9.1 @ 20A, 10V 13 @ 20A, 10V 11.5 @ 20A, 10V 10.3 @ 10A, 8V 10.2 @ 8A, 10V 10.2 @ 8A, 10V 9.4 @ 30A, 10V 10.4 @ 10A, 10V
Vgs(th) (Max) @ Id (V) 2.2 @ 250µA 2.2 @ 250µA 2.2 @ 250µA 2 @ 250µA 2.2 @ 250µA 2 @ 250µA 1.8 @ 250µA 1.9 @ 250µA 1.9 @ 250µA 2.1 @ 250µA 2.5 @ 1mA
Gate Charge (Qg) @ Vgs (nC) 17.8 @ 10V 25 @ 10V 17 @ 10V 23 @ 10V 13 @ 10V 17 @ 10V 5.1 @ 4.5V 15 @ 10V 15 @ 10V 7.8 @ 4.5V 22 @ 10V
Ciss (Max) @ Vds (pF) 770 @ 15V 825 @ 15V 1500 @ 15V 1700 @ 15V 970 @ 15V 1300 @ 15V 700 @ 15V 998 @ 15V 998 @ 15V 770 @ 15V 1100 @ 15V
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-DFN-EP (3x3) 8-DFN-EP (3x3) PG-TSDSON-8 PG-TSDSON-8 PG-TSDSON-8 PG-TSDSON-8 8-VSON-CLIP (3.3x3.3) 8-VSONP (3x3.3) 8-VSONP (3x3.3) 8-WDFN (3.3x3.3) 8-HSMT (3.2x3)
Product Status Obsolete Active Not For New Designs Active Active Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: AON7380

The AON7380 from Alpha & Omega Semiconductor Inc. is the preferred direct substitute for the AON7402. It maintains identical package geometry (8-DFN-EP 3x3), matching drain-to-source voltage (30V), and compatible electrical characteristics. The AON7380 features improved continuous drain current (24A at Tc) and lower on-resistance (6.8 mOhm @ 20A, 10V) compared to the AON7402. The device is classified as Active and ROHS3 Compliant, ensuring long-term availability and regulatory compliance.

Secondary Recommendations: Texas Instruments NexFET™ Series

The CSD17579Q3A and CSD17579Q3AT (identical electrical specifications, different packaging) from Texas Instruments provide equivalent performance with 20A continuous drain current at Ta and superior gate charge characteristics (15 nC @ 10V). Both devices are Active status and ROHS3 Compliant. The CSD17308Q3 offers higher drain current capability (14A at Ta, 44A at Tc) with lower gate charge (5.1 nC @ 4.5V), suitable for applications requiring enhanced switching performance.

Tertiary Recommendations: Infineon OptiMOS™ Series

The BSZ100N03MSGATMA1 and BSZ130N03LSGATMA1 from Infineon Technologies provide compatible electrical performance with 30V Vdss and continuous drain currents of 10A and 35A respectively. Both devices are Active status and ROHS3 Compliant. The BSZ100N03LSGATMA1 is classified as Not For New Designs and should be avoided for new product development.

Alternative Options: onsemi and Rohm Semiconductor

The NTTFS4C13NTAG from onsemi and RQ3E100BNTB from Rohm Semiconductor are functionally compatible alternatives with 30V Vdss and 7.2A and 10A continuous drain currents respectively. Both are Active status and ROHS3 Compliant. These options are suitable for applications with lower current requirements or where alternative supplier qualification is required.

Package Compatibility Considerations

All substitute parts are surface mount devices with 8-pin power packages. While the AON7402 uses 8-DFN-EP (3x3) packaging, substitute parts employ alternative 8-pin power package variants (8-TSDSON, 8-VSON-CLIP, 8-VSONP, 8-WDFN, 8-HSMT). PCB layout modifications may be required to accommodate package footprint differences. Thermal performance characteristics vary across substitutes; applications requiring maximum thermal dissipation should prioritize parts with higher Tc ratings (40A at Tc for BSZ100N03LSGATMA1 and CSD17308Q3).

Frequently Asked Questions (FAQ)

Q: Can the AON7380 be used as a direct replacement for the AON7402 without PCB modifications?

A: The AON7380 maintains identical package geometry (8-DFN-EP 3x3) and pin configuration as the AON7402, enabling direct PCB substitution without layout modifications. Electrical characteristics are compatible within the specified operating parameters.

Q: What is the primary reason for substituting the AON7402?

A: The AON7402 is classified as obsolete. Substitution is necessary to ensure component availability for production, redesign efforts, and long-term supply chain continuity. Active product alternatives provide equivalent or superior electrical performance with guaranteed long-term availability.

Q: Are all substitute parts ROHS3 Compliant?

A: All listed substitute parts are ROHS3 Compliant. The AON7402 compliance status is not specified in the provided data. Verification of the original part's compliance status is recommended for applications subject to regulatory requirements.

Q: How do package differences affect substitution?

A: Substitute parts employ different 8-pin power package variants (8-TSDSON, 8-VSON-CLIP, 8-VSONP, 8-WDFN, 8-HSMT) compared to the AON7402 (8-DFN-EP). While all packages are mechanically similar with comparable footprint dimensions (3x3 to 3.3x3.3 mm), PCB layout modifications may be required. The AON7380 is the only substitute with identical package geometry, eliminating layout concerns.

Q: Which substitute offers the best thermal performance?

A: The CSD17308Q3 from Texas Instruments provides the highest continuous drain current at Tc (44A), indicating superior thermal performance capability. The BSZ100N03LSGATMA1 and BSZ100N03MSGATMA1 from Infineon also support 40A at Tc. Selection depends on specific thermal dissipation requirements and application constraints.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge values (CSD17308Q3 at 5.1 nC, NTTFS4C13NTAG at 7.8 nC) enable faster switching and reduced driver power consumption. Higher gate charge values (BSZ100N03MSGATMA1 at 23 nC, RQ3E100BNTB at 22 nC) require more robust gate drive circuits but may offer improved noise immunity.

Q: Can substitutes with lower continuous drain current ratings be used in applications designed for the AON7402?

A: Substitutes with lower Ta ratings (such as NTTFS4C13NTAG at 7.2A or RQ3E100BNTB at 10A) can be used only if the application's actual continuous current requirement does not exceed the substitute's rating. Thermal analysis must confirm that the substitute's Tc rating provides adequate margin for the application's thermal environment. Undersizing current ratings increases thermal stress and reduces device reliability.

Q: What is the difference between CSD17579Q3A and CSD17579Q3AT?

A: CSD17579Q3A and CSD17579Q3AT are electrically identical devices with identical electrical specifications. The primary difference is packaging: CSD17579Q3A is supplied in Cut Tape (CT) & Digi-Reel® format, while CSD17579Q3AT is supplied in Tape & Reel (TR) format. Selection depends on procurement and assembly process requirements.

Q: Are all substitutes rated for the full -55°C to 150°C operating temperature range?

A: All listed substitute parts support the -55°C to 150°C (TJ) operating temperature range, matching the AON7402 specification. This ensures compatibility for applications requiring extended temperature operation.

Q: Which substitute is recommended for new product designs?

A: For new product designs, the AON7380 is the primary recommendation due to identical package geometry and active product status. For applications requiring enhanced switching performance or higher current capability, the CSD17579Q3A or CSD17308Q3 from Texas Instruments are suitable alternatives. Avoid BSZ100N03LSGATMA1, which is classified as Not For New Designs.

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