AON7401 P-Channel MOSFET 30V 12A/35A Equivalent & Substitute Parts

Part Overview

The AON7401 is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 12A (Ta) or 35A (Tc). The device is housed in an 8-DFN-EP (3x3) surface mount package and is designed for applications requiring moderate to high current switching and power management.

The AON7401 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	12A (Ta), 35A (Tc)	A
Rds On (Max) @ Id, Vgs	14 mOhm @ 9A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	3 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	39 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	2600 @ 15V	pF
Power Dissipation (Max)	3.1W (Ta), 29W (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	8-DFN-EP (3x3)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the AON7401 is determined by strict alignment of electrical and mechanical parameters within the P-Channel MOSFET category. The following criteria establish substitution validity:

Primary Substitution Criteria:

FET Type: P-Channel (required match)
Drain to Source Voltage (Vdss): 30V (required match)
Continuous Drain Current (Id): Equal to or greater than 12A (Ta) or 35A (Tc)
Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
Maximum Gate Voltage (Vgs Max): ±25V or greater
Operating Temperature Range: Minimum -55°C to maximum 150°C (or equivalent)
RoHS Compliance: ROHS3 Compliant (required match)
Moisture Sensitivity Level: MSL 1 (required match)

Package Considerations: Substitute parts may utilize different surface mount packages (8-DFN-EP, PowerPAK® 1212-8) provided the physical footprint and thermal characteristics are evaluated for the specific application. Package differences require PCB layout verification.

The four substitute parts listed below meet the electrical parameter requirements and compliance standards for direct functional replacement in applications designed for the AON7401.

Parameter Comparison

Parameter	AON7401	AONR21307	SI7121ADN-T1-GE3	SI7129DN-T1-GE3	SI7617DN-T1-GE3
Manufacturer	Alpha & Omega	Alpha & Omega	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
FET Type	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	12 (Ta), 35 (Tc)	24 (Tc)	12 (Ta)	35 (Tc)	35 (Tc)
Rds On (Max) @ Id, Vgs (mOhm)	14 @ 9A, 10V	11 @ 17A, 10V	15 @ 7A, 10V	11.4 @ 14.4A, 10V	12.3 @ 13.9A, 10V
Vgs(th) (Max) @ Id (V)	3 @ 250µA	2.3 @ 250µA	2.5 @ 250µA	2.8 @ 250µA	2.5 @ 250µA
Qg (Max) @ Vgs (nC)	39 @ 10V	50 @ 10V	50 @ 10V	71 @ 10V	59 @ 10V
Ciss (Max) @ Vds (pF)	2600 @ 15V	1995 @ 15V	1870 @ 15V	3345 @ 15V	1800 @ 15V
Power Dissipation (Max) (W)	3.1 (Ta), 29 (Tc)	5 (Ta), 28 (Tc)	3.5 (Ta), 27.8 (Tc)	3.8 (Ta), 52.1 (Tc)	3.7 (Ta), 52 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-50 to 150	-50 to 150	-55 to 150
Package	8-DFN-EP (3x3)	8-DFN-EP (3x3)	PowerPAK® 1212-8	PowerPAK® 1212-8	PowerPAK® 1212-8
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

AONR21307 (Alpha & Omega Semiconductor Inc.)

The AONR21307 is an active product from the same manufacturer as the AON7401, maintaining design continuity and supply chain familiarity. It operates at 30V with 24A continuous drain current (Tc), exceeding the AON7401 current rating. The device retains the 8-DFN-EP (3x3) package footprint, eliminating PCB layout modifications. Rds On performance is improved at 11 mOhm, and gate threshold voltage is lower at 2.3V, resulting in faster switching characteristics. All compliance certifications (ROHS3, MSL 1) are maintained. This part is recommended for direct replacement in applications where package compatibility is a primary requirement.

SI7121ADN-T1-GE3 (Vishay Siliconix)

The SI7121ADN-T1-GE3 is an active TrenchFET® product rated for 30V and 12A (Ta) continuous drain current, matching the AON7401 current specification at ambient temperature. The device utilizes the PowerPAK® 1212-8 package, which differs from the original 8-DFN-EP footprint and requires PCB layout evaluation. Rds On is 15 mOhm at 7A, 10V, and gate threshold voltage is 2.5V. Operating temperature range is -50°C to 150°C, with a lower minimum temperature limit compared to the AON7401. All compliance certifications are met. This part is suitable for applications where current requirements align with the 12A (Ta) specification and package transition is feasible.

SI7129DN-T1-GE3 (Vishay Siliconix)

The SI7129DN-T1-GE3 is an active TrenchFET® product rated for 30V and 35A (Tc) continuous drain current, matching the AON7401 maximum current rating. The device utilizes the PowerPAK® 1212-8 package. Rds On is 11.4 mOhm at 14.4A, 10V, providing improved on-resistance performance. Gate charge is higher at 71 nC, and input capacitance is elevated at 3345 pF, which may affect switching speed in high-frequency applications. Operating temperature range is -50°C to 150°C. Maximum gate voltage is ±20V, which is lower than the AON7401 specification of ±25V. All compliance certifications are met. This part is suitable for high-current applications where thermal performance and current capacity are prioritized.

SI7617DN-T1-GE3 (Vishay Siliconix)

The SI7617DN-T1-GE3 is an active TrenchFET® product rated for 30V and 35A (Tc) continuous drain current, matching the AON7401 maximum current rating. The device utilizes the PowerPAK® 1212-8 package. Rds On is 12.3 mOhm at 13.9A, 10V. Gate charge is 59 nC, and input capacitance is 1800 pF, the lowest among substitute options, supporting faster switching characteristics. Operating temperature range is -55°C to 150°C, matching the AON7401 specification. Maximum gate voltage is ±25V, fully compatible with the original part. All compliance certifications are met. This part is recommended for high-current applications requiring optimized switching performance and full temperature range compatibility.

Frequently Asked Questions (FAQ)

Q: Can the AONR21307 be used as a direct replacement for the AON7401 without PCB modifications?

A: Yes. The AONR21307 retains the 8-DFN-EP (3x3) package footprint, allowing direct PCB placement without layout changes. Electrical parameters are compatible, and all compliance certifications match.

Q: What is the primary difference between the AON7401 and the Vishay TrenchFET® substitutes?

A: The Vishay substitutes (SI7121ADN-T1-GE3, SI7129DN-T1-GE3, SI7617DN-T1-GE3) utilize the PowerPAK® 1212-8 package instead of the 8-DFN-EP (3x3) package. This requires PCB layout evaluation and potential redesign. Electrical performance characteristics differ in gate charge, input capacitance, and on-resistance specifications.

Q: Which substitute part is best for applications requiring the lowest on-resistance?

A: The AONR21307 and SI7129DN-T1-GE3 both offer 11 mOhm on-resistance specifications, representing the lowest values among the substitute options. Selection depends on package compatibility requirements and current rating needs.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All four substitute parts (AONR21307, SI7121ADN-T1-GE3, SI7129DN-T1-GE3, SI7617DN-T1-GE3) are ROHS3 compliant and maintain MSL 1 (Unlimited) moisture sensitivity level, matching the AON7401 compliance profile.

Q: What is the operating temperature range difference between the AON7401 and SI7121ADN-T1-GE3?

A: The AON7401 operates from -55°C to 150°C (TJ), while the SI7121ADN-T1-GE3 operates from -50°C to 150°C (TJ). The SI7121ADN-T1-GE3 has a higher minimum operating temperature by 5°C. Applications requiring operation below -50°C must use the AON7401, AONR21307, or SI7617DN-T1-GE3.

Q: Can the SI7617DN-T1-GE3 be used in applications designed for the AON7401?

A: Yes. The SI7617DN-T1-GE3 meets all electrical parameter requirements, operates across the full -55°C to 150°C temperature range, and supports ±25V maximum gate voltage. The PowerPAK® 1212-8 package requires PCB layout verification. This part is suitable for high-current applications with optimized switching characteristics.

Q: What does gate charge (Qg) represent, and why does it vary among substitutes?

A: Gate charge is the total charge required to switch the MOSFET from off to on state at a specified gate voltage. Higher gate charge increases switching time and power loss during transitions. The AON7401 specifies 39 nC, while substitutes range from 50 nC to 71 nC. Applications with high switching frequencies should prioritize lower gate charge values.

Q: Is the SI7129DN-T1-GE3 suitable for applications requiring ±25V gate voltage operation?

A: No. The SI7129DN-T1-GE3 specifies a maximum gate voltage of ±20V, which is lower than the AON7401 specification of ±25V. Applications requiring ±25V gate voltage operation must use the AONR21307 or SI7617DN-T1-GE3.

Q: What inventory availability exists for these substitute parts?

A: Current inventory levels are: AONR21307 (5,900 pcs), SI7121ADN-T1-GE3 (6,976 pcs), SI7129DN-T1-GE3 (30,152 pcs), and SI7617DN-T1-GE3 (45,920 pcs). The AON7401 has 250,300 pcs in stock. Inventory status is subject to change and should be verified at time of procurement.

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