AON7380 Equivalent & Substitute Parts

Part Overview

The AON7380 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with 24A continuous drain current at 25°C (Tc). The device is housed in an 8-DFN-EP (3x3) surface mount package and is classified as Active product status. This part is suitable for applications requiring efficient switching and power management in compact form factors.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal, voltage, and current requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	24	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	6.8	mOhm @ 20A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	2.2	V @ 250µA
Gate Charge (Qg Max) @ Vgs	25	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	825	pF @ 15V
Power Dissipation (Max)	4.1 / 24	W (Ta) / W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-DFN-EP (3x3)	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the AON7380 are qualified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 30V (exact match required)
On-Resistance (Rds On): Maximum 6.8mOhm or lower at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within ±0.5V of 2.2V
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Surface Mount
RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Factors:

Continuous Drain Current (Id): Minimum 24A at Tc or equivalent thermal performance
Package footprint compatibility: 8-pin power package configurations
Gate Charge (Qg): Lower values preferred for faster switching
Input Capacitance (Ciss): Lower values preferred for reduced drive requirements

All substitute parts listed maintain the 30V Vdss rating and deliver equivalent or superior on-resistance characteristics. Differences in package geometry and thermal performance are noted to enable informed selection based on application-specific layout and thermal management requirements.

Parameter Comparison

Parameter	AON7380	CSD17552Q3A	DMT3006LFG-13	TPH6R003NL,LQ	TPN6R003NL,LQ
Manufacturer	Alpha & Omega	Texas Instruments	Diodes Inc.	Toshiba	Toshiba
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	24 (Tc)	15 (Ta) / 60 (Tc)	16 (Ta) / 55.6 (Tc)	38 (Tc)	27 (Tc)
Rds On Max (mOhm)	6.8 @ 20A, 10V	6 @ 11A, 10V	6 @ 12A, 10V	6 @ 19A, 10V	6 @ 13.5A, 10V
Vgs(th) Max (V)	2.2 @ 250µA	1.9 @ 250µA	3.0 @ 250µA	2.3 @ 200µA	2.3 @ 200µA
Qg Max (nC)	25 @ 10V	12 @ 4.5V	22.6 @ 10V	17 @ 10V	17 @ 10V
Ciss Max (pF)	825 @ 15V	2050 @ 15V	1320 @ 15V	1400 @ 15V	1400 @ 15V
Power Dissipation (W)	4.1 (Ta) / 24 (Tc)	2.6 (Ta)	27.8 (Tc)	1.6 (Ta) / 34 (Tc)	0.7 (Ta) / 32 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-DFN-EP (3x3)	8-VSONP (3x3.3)	PowerDI3333-8	8-SOP Advance (5x5)	8-TSON Advance (3.1x3.1)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	RoHS Compliant
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

CSD17552Q3A (Texas Instruments NexFET™)

The CSD17552Q3A is an Active product with ROHS3 compliance. This device delivers superior on-resistance performance (6mOhm) and significantly lower gate charge (12nC), enabling faster switching transitions. The higher continuous drain current rating at Tc (60A) provides thermal headroom for demanding applications. Package dimensions (8-VSONP 3x3.3) are compatible with compact layouts. Selection is appropriate for applications prioritizing switching speed and thermal efficiency.

DMT3006LFG-13 (Diodes Incorporated)

The DMT3006LFG-13 is an Active product with ROHS3 compliance and AEC-Q101 automotive qualification. This device is suitable for automotive-grade applications requiring enhanced reliability. On-resistance (6mOhm) and gate charge (22.6nC) are equivalent to the AON7380. The PowerDI3333-8 package provides superior thermal performance (27.8W Tc) for high-power applications. Selection is appropriate for automotive and high-reliability applications.

TPH6R003NL,LQ (Toshiba U-MOSVIII-H)

The TPH6R003NL,LQ is an Active product with RoHS compliance. This device delivers the highest continuous drain current rating (38A Tc) and superior power dissipation capability (34W Tc). On-resistance (6mOhm) and gate charge (17nC) are equivalent to the AON7380. The 8-SOP Advance package (5x5) is larger than the AON7380 but provides enhanced thermal performance. Selection is appropriate for high-current applications where package size is not a constraint.

TPN6R003NL,LQ (Toshiba U-MOSVIII-H)

The TPN6R003NL,LQ is an Active product with RoHS compliance. This device delivers excellent continuous drain current (27A Tc) with the lowest ambient temperature power dissipation (700mW Ta). On-resistance (6mOhm) and gate charge (17nC) are equivalent to the AON7380. The 8-TSON Advance package (3.1x3.1) provides a compact footprint comparable to the AON7380 with improved thermal performance (32W Tc). Selection is appropriate for space-constrained applications requiring balanced thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the CSD17552Q3A directly replace the AON7380 in existing PCB layouts?

A: The CSD17552Q3A uses an 8-VSONP (3x3.3) package compared to the AON7380's 8-DFN-EP (3x3). While both are 8-pin power packages with similar footprints, PCB layout verification is required to confirm pad compatibility and thermal via placement. The devices are electrically equivalent at the specified operating points.

Q: What is the primary advantage of the DMT3006LFG-13 over the AON7380?

A: The DMT3006LFG-13 provides AEC-Q101 automotive qualification and superior power dissipation capability (27.8W Tc versus 24W Tc). On-resistance and gate threshold voltage are equivalent. This device is specified for automotive applications requiring enhanced reliability documentation and traceability.

Q: Why does the CSD17552Q3A have lower gate charge than the AON7380?

A: Gate charge is a device-specific characteristic determined by the semiconductor process technology and die design. The CSD17552Q3A's lower gate charge (12nC versus 25nC) results in faster switching transitions and reduced gate drive power requirements. This is an inherent advantage of the NexFET™ technology platform.

Q: Are all substitute parts rated for the same operating temperature range?

A: All substitute parts are rated for -55°C to 150°C junction temperature, matching the AON7380. This ensures thermal performance equivalence across the specified operating range.

Q: Which substitute part has the smallest package footprint?

A: The TPN6R003NL,LQ uses an 8-TSON Advance (3.1x3.1) package, which is comparable in size to the AON7380's 8-DFN-EP (3x3). The CSD17552Q3A (8-VSONP 3x3.3) is also compact. The TPH6R003NL,LQ uses a larger 8-SOP Advance (5x5) package and is not suitable for space-constrained layouts.

Q: What is the difference between Ta and Tc power dissipation ratings?

A: Ta (ambient temperature) power dissipation is measured at 25°C ambient with natural convection. Tc (case temperature) power dissipation is measured at the device case with forced cooling or thermal management. Tc ratings are typically higher and represent the device's maximum capability under controlled thermal conditions. Application-specific thermal design determines which rating applies.

Q: Can I use the TPH6R003NL,LQ in a design originally specified for the AON7380?

A: Electrical substitution is valid; the devices are equivalent at the specified operating points with identical on-resistance and gate threshold voltage. However, the TPH6R003NL,LQ's larger package (5x5 versus 3x3) requires PCB layout modification. Thermal performance is superior, which may allow for reduced heatsinking or improved reliability margins.

Q: Are all substitute parts compliant with RoHS regulations?

A: Yes. The CSD17552Q3A and DMT3006LFG-13 are ROHS3 compliant. The TPH6R003NL,LQ and TPN6R003NL,LQ are RoHS compliant. All devices meet lead-free and hazardous substance restrictions for commercial and industrial applications.

Q: What is the significance of the gate threshold voltage differences between parts?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage required to initiate conduction. The AON7380 specifies 2.2V, while substitutes range from 1.9V to 3.0V. These variations are within normal process tolerances and do not affect circuit operation when gate drive voltage is properly specified. Gate drive circuits must accommodate the maximum Vgs(th) of the selected device.

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