AON7230 N-Channel MOSFET 100V 47A Equivalent & Substitute Parts

Part Overview

The AON7230 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with 47A continuous drain current at Tc. The device is housed in an 8-DFN-EP (3.3x3.3) surface mount package and dissipates 54W at Tc. This part carries a "Not For New Designs" product status, making identification of equivalent and substitute components essential for ongoing production support and design alternatives.

The AON7230 operates across a temperature range of -55°C to 150°C and features an on-resistance (Rds On) of 11.5mOhm at 13A and 10V gate-source voltage. The device is RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Substiute Parts

AON7230

Alpha & Omega Semiconductor Inc.In Stock: 2745AON7230 Datasheet

Current PartRFQ

AONR66922

Alpha & Omega Semiconductor Inc.In Stock: 15901AONR66922 Datasheet

DirectRFQ

FDMC86160

onsemiIn Stock: 9915FDMC86160 Datasheet

MFR RecommendedRFQ

FDMC86160ET100

onsemiIn Stock: 2317FDMC86160ET100 Datasheet

MFR RecommendedRFQ

FDMC86320

onsemiIn Stock: 1856FDMC86320 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AON7230 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 100V to ensure compatibility with the original design voltage specification.

Current Capability: Substitute parts are grouped based on their continuous drain current (Id) at Tc. The AON7230 delivers 47A at Tc; substitutes are evaluated for equivalent or superior current handling at the same thermal condition.

On-Resistance (Rds On): The on-resistance directly affects power dissipation and thermal performance. The AON7230 specifies 11.5mOhm at 13A and 10V; substitutes are assessed for comparable or lower on-resistance values.

Package Compatibility: The original 8-DFN-EP (3.3x3.3) surface mount package defines the mechanical footprint. Substitutes must fit within the same or compatible package envelope to ensure PCB layout compatibility.

Threshold Voltage (Vgs(th)): Gate drive requirements are determined by Vgs(th). The AON7230 specifies 2.5V at 250µA; substitutes with similar threshold voltages ensure consistent gate drive circuit design.

Temperature Range: The AON7230 operates from -55°C to 150°C. Substitutes must support this range or an extended range to maintain thermal margin.

Compliance: All parts must maintain RoHS3 compliance and MSL 1 rating for manufacturing compatibility.

Parameter Comparison

Engineering Selection Recommendations

AONR66922 (Alpha & Omega Semiconductor Inc.)

The AONR66922 is the closest functional equivalent to the AON7230. Both devices share identical voltage rating (100V), nearly equivalent current capability (50A Tc vs. 47A Tc), matching threshold voltage (2.5V), and identical package footprint (8-DFN-EP 3.3x3.3). The AONR66922 features superior on-resistance (9mOhm vs. 11.5mOhm) and active product status, making it the primary substitute for direct replacement in existing designs. Gate charge and input capacitance values are comparable, ensuring minimal circuit redesign. This part is suitable for applications requiring seamless drop-in compatibility.

FDMC86160ET100 (onsemi PowerTrench®)

The FDMC86160ET100 maintains the 100V voltage rating and delivers 43A at Tc, providing adequate current capacity for most AON7230 applications. This part features an extended operating temperature range (-55°C to 175°C) compared to the original (-55°C to 150°C), offering additional thermal margin. The Power33 package differs from the original 8-DFN-EP footprint, requiring PCB layout modification. On-resistance is higher (14mOhm), resulting in increased power dissipation (65W Tc vs. 54W Tc). Gate charge is significantly lower (22nC vs. 45nC), reducing gate drive requirements. This part is suitable for applications where package change is acceptable and extended temperature operation is beneficial.

FDMC86160 (onsemi PowerTrench®)

The FDMC86160 provides equivalent voltage rating (100V) and current capability (43A Tc) with identical electrical characteristics to FDMC86160ET100. The primary difference is packaging format (Cut Tape & Digi-Reel® vs. Tape & Reel). Power dissipation is lower (54W Tc vs. 65W Tc), matching the original specification more closely. This part is suitable for applications where the Power33 package change is acceptable and standard temperature operation (-55°C to 150°C) is sufficient.

FDMC86320 (onsemi PowerTrench®)

The FDMC86320 operates at a reduced voltage rating (80V vs. 100V) and delivers lower current (22A Tc vs. 47A Tc). This part is not suitable as a direct substitute for the AON7230 in applications requiring full 100V voltage margin or 47A current capacity. The 8-MLP package is mechanically compatible with the original 8-DFN-EP footprint. This part may be considered only for applications with reduced voltage and current requirements.

Frequently Asked Questions (FAQ)

Q: Can the AONR66922 replace the AON7230 without PCB modifications?

A: Yes. The AONR66922 shares the identical 8-DFN-EP (3.3x3.3) package footprint, voltage rating (100V), and threshold voltage (2.5V) as the AON7230. No PCB layout changes are required. The superior on-resistance (9mOhm vs. 11.5mOhm) and active product status make this the recommended direct replacement.

Q: What are the implications of using FDMC86160ET100 instead of AON7230?

A: The FDMC86160ET100 requires PCB layout modification due to the Power33 package change from the original 8-DFN-EP. Gate drive circuits must accommodate the lower gate charge (22nC vs. 45nC). Higher on-resistance (14mOhm) increases power dissipation by approximately 11W at Tc (65W vs. 54W), requiring thermal design review. The extended temperature range (-55°C to 175°C) provides additional operational margin. Voltage rating (100V) and current capacity (43A Tc) remain adequate for most applications.

Q: Is the FDMC86320 suitable for high-current applications?

A: No. The FDMC86320 delivers only 22A at Tc, significantly below the AON7230 specification of 47A. Additionally, the 80V voltage rating provides reduced margin compared to the original 100V specification. This part is suitable only for applications with reduced current and voltage requirements.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The AON7230 specifies 45nC at 10V, while onsemi substitutes (FDMC86160, FDMC86160ET100) specify 22nC. Lower gate charge reduces gate drive power dissipation and switching losses. Gate drive circuits designed for the AON7230 will operate with reduced power consumption when using onsemi substitutes, but no circuit redesign is required for basic functionality.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (AONR66922, FDMC86160, FDMC86160ET100, FDMC86320) maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original AON7230 specifications.

Q: What is the impact of different on-resistance values on thermal performance?

A: On-resistance directly determines conduction losses. The AON7230 specifies 11.5mOhm at 13A and 10V. The AONR66922 (9mOhm) reduces losses by approximately 22%, improving thermal performance. The FDMC86160 and FDMC86160ET100 (14mOhm) increase losses by approximately 22%, requiring thermal design verification. The FDMC86320 (11.7mOhm) provides comparable performance at reduced current levels.

Q: Can substitutes be used interchangeably in existing production?

A: The AONR66922 provides direct interchangeability without design changes. The onsemi substitutes (FDMC86160, FDMC86160ET100, FDMC86320) require PCB layout modification due to package differences and should undergo thermal and electrical validation before production implementation. The FDMC86320 is not recommended for applications requiring the full 47A current specification.