AON6796 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AON6796 is an N-Channel 30V MOSFET manufactured by Alpha & Omega Semiconductor Inc., designed for surface mount applications in the 8-DFN (5x6) package. This device delivers 32A continuous drain current at Ta and 70A at Tc, with a maximum power dissipation of 6.2W (Ta) and 31W (Tc). The AON6796 is classified as "Not For New Designs," indicating it has reached end-of-life status. Identifying equivalent and substitute parts is necessary to support existing designs, facilitate production continuity, and enable migration to active product alternatives that meet the same electrical and mechanical requirements.

Substiute Parts

AON6796

Alpha & Omega Semiconductor Inc.In Stock: 66323AON6796 Datasheet

Current PartRFQ

AONS36316

Alpha & Omega Semiconductor Inc.In Stock: 12367AONS36316 Datasheet

MFR RecommendedRFQ

DMT3004LFG-7

Diodes IncorporatedIn Stock: 6317DMT3004LFG-7 Datasheet

MFR RecommendedRFQ

DMT35M7LFV-7

Diodes IncorporatedIn Stock: 3149DMT35M7LFV-7 Datasheet

MFR RecommendedRFQ

RQ3E180AJTB

Rohm SemiconductorIn Stock: 20462RQ3E180AJTB Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AON6796 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Must equal 30V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Mounting Type: Must be Surface Mount
• Operating Temperature Range: Must support -55°C to 150°C (TJ)
• RoHS Status: Must be ROHS3 Compliant
• Moisture Sensitivity Level: Must be 1 (Unlimited)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Substitute must meet or exceed 32A (Ta) and 70A (Tc)
• Rds On (Max): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values reduce gate drive requirements
• Package footprint compatibility: Physical dimensions must accommodate PCB layout

The substitute parts listed below satisfy all primary criteria and maintain electrical compatibility within the specified parameter ranges. Package variations (8-DFN, POWERDI3333-8, 8-HSMT) represent different physical form factors that may require PCB layout modifications.

Parameter Comparison

Engineering Selection Recommendations

AONS36316 (Alpha & Omega Semiconductor Inc.)

The AONS36316 is the closest functional equivalent to the AON6796. Both devices share identical package geometry (8-DFN 5x6), voltage rating (30V), and operating temperature range (-55°C to 150°C). The AONS36316 is classified as Active product status, ensuring continued availability and manufacturing support. Electrical parameters are comparable: continuous drain current is 28A (Ta) and 32A (Tc), with Rds On of 4.1 mOhm at 20A, 10V. This substitute is suitable for direct replacement in existing designs where the 8-DFN package footprint is already established. ROHS3 compliance and MSL 1 rating match the original specification.

DMT35M7LFV-7 (Diodes Incorporated)

The DMT35M7LFV-7 delivers the highest continuous drain current among substitutes at 76A (Tc), exceeding the AON6796 specification of 70A (Tc). This device operates at 30V with Active product status and full ROHS3 compliance. The package is PowerDI3333-8 (Type UX), which differs from the original 8-DFN footprint and requires PCB layout modification. Gate charge is 36 nC at 10V, lower than the AON6796 at 23 nC, indicating increased switching losses. This substitute is appropriate for applications requiring maximum current capacity and thermal performance, provided PCB redesign is acceptable.

RQ3E180AJTB (Rohm Semiconductor)

The RQ3E180AJTB is an Active product rated for 30V with 18A (Ta) and 30A (Tc) continuous drain current. The 8-HSMT (3.2x3) package differs from the original 8-DFN footprint, necessitating PCB layout changes. Gate threshold voltage is 1.5V at 11mA, lower than the AON6796 at 1.9V at 250µA, providing improved gate drive characteristics. Input capacitance is significantly higher at 4290 pF, which may increase gate drive requirements. This substitute is suitable for lower current applications or where the smaller 8-HSMT package footprint provides design advantages.

DMT3004LFG-7 (Diodes Incorporated)

The DMT3004LFG-7 is rated for 30V with 10.4A (Ta) and 25A (Tc) continuous drain current, representing the lowest current capacity among substitutes. This device carries AEC-Q101 automotive qualification and is classified as Active. The PowerDI3333-8 package requires PCB layout modification. Gate threshold voltage is 3V at 250µA, higher than the AON6796, which may require adjusted gate drive circuits. This substitute is appropriate for automotive applications or lower current designs where the automotive qualification is required.

Frequently Asked Questions (FAQ)

Q: Can the AONS36316 be used as a direct replacement for the AON6796 without PCB modifications?

A: Yes. The AONS36316 shares the identical 8-DFN (5x6) package footprint with the AON6796. Both devices operate at 30V with -55°C to 150°C temperature range, ROHS3 compliance, and MSL 1 rating. Electrical parameters are compatible within acceptable tolerances. No PCB layout changes are required.

Q: What are the package differences between substitute parts?

A: The AON6796 and AONS36316 use 8-DFN (5x6) packages. The DMT3004LFG-7 and DMT35M7LFV-7 use PowerDI3333-8 packages. The RQ3E180AJTB uses 8-HSMT (3.2x3). Different packages have different physical dimensions and pin configurations, requiring PCB layout modifications for non-matching packages.

Q: Which substitute provides the best thermal performance?

A: The DMT35M7LFV-7 offers the highest power dissipation capability at 31W (Tc) and the highest continuous drain current at 76A (Tc). However, it requires PCB layout modification due to package differences. The AONS36316 provides comparable thermal performance (26W Tc) with identical package compatibility.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitute parts (AONS36316, DMT3004LFG-7, DMT35M7LFV-7, RQ3E180AJTB) are ROHS3 compliant with MSL 1 (Unlimited) rating, matching the AON6796 specification.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge determines the energy required to switch the MOSFET on and off. The AON6796 has 23 nC at 10V. Substitutes range from 36 to 44 nC, indicating higher gate drive energy requirements. Gate drive circuits may require adjustment for substitutes with higher Qg values.

Q: Can I use the DMT35M7LFV-7 if my application requires 70A continuous current?

A: Yes. The DMT35M7LFV-7 is rated for 76A (Tc) continuous drain current, exceeding the AON6796 requirement of 70A (Tc). However, the PowerDI3333-8 package differs from the original 8-DFN footprint, requiring PCB redesign.

Q: What does "Product Status: Not For New Designs" mean for the AON6796?

A: This designation indicates the AON6796 has reached end-of-life and is no longer recommended for new product development. Existing inventory remains available, but long-term supply cannot be guaranteed. Migration to Active status substitutes (AONS36316, DMT3004LFG-7, DMT35M7LFV-7, RQ3E180AJTB) is recommended for sustained production.

Q: Which substitute has the lowest on-resistance (Rds On)?

A: The AON6796 has the lowest Rds On at 3.9 mOhm at 20A, 10V. Among substitutes, the AONS36316 is closest at 4.1 mOhm. Higher Rds On values in other substitutes result in increased conduction losses and heat generation.

Q: Is automotive qualification available in substitute parts?

A: Yes. The DMT3004LFG-7 carries AEC-Q101 automotive qualification. Other substitutes do not list automotive qualification in the provided specifications.