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AON6782 Equivalent & Substitute Parts
Part Overview
The AON6782 is an N-Channel 30V MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 24A continuous drain current (Ta) and 85A (Tc) in an 8-DFN (5x6) surface mount package. This device features a Schottky body diode and operates across the temperature range of -55°C to 150°C. The part is classified as Obsolete, necessitating identification of equivalent alternatives for ongoing production and design requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors while meeting RoHS3 compliance and MSL Level 1 specifications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Ta) | 24 | A |
| Continuous Drain Current @ 25°C (Tc) | 85 | A |
| Rds On (Max) @ 20A, 10V | 2.4 | mOhm |
| Gate Charge (Qg) @ 10V | 51 | nC |
| Input Capacitance (Ciss) @ 15V | 6780 | pF |
| Power Dissipation (Ta) | 2.5 | W |
| Power Dissipation (Tc) | 83 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | 8-DFN (5x6) | Surface Mount |
| RoHS Status | ROHS3 Compliant | - |
| MSL Rating | 1 (Unlimited) | - |
Substitute Part Grouping Explanation
Substitute parts for the AON6782 are selected based on strict electrical and mechanical compatibility criteria. All substitute MOSFETs must satisfy the following requirements:
Mandatory Compatibility Parameters:
- Drain to Source Voltage (Vdss): 30V minimum
- Continuous Drain Current (Ta): Equal to or greater than 24A
- Continuous Drain Current (Tc): Equal to or greater than 85A
- On-State Resistance (Rds On): Equal to or less than 2.4mOhm @ specified conditions
- Gate Charge (Qg): Comparable to 51nC @ 10V to ensure drive circuit compatibility
- Operating Temperature Range: -55°C to 150°C minimum
- Package Type: Surface mount 8-pin configurations (8-DFN, 8-PQFN, 8-WPAK, PQFN)
- Compliance: RoHS3 compliant, MSL Level 1
Substitutes are grouped by their ability to meet or exceed these parameters while maintaining form factor compatibility and regulatory compliance. Variations in package geometry (DFN vs. PQFN vs. WPAK) are acceptable provided PCB layout accommodates the specific pin configuration.
Parameter Comparison
| Parameter | AON6782 | AON6512 | FDMS0306AS | IRFH8311TRPBF | RJK0346DPA-01#J0B |
|---|---|---|---|---|---|
| Manufacturer | Alpha & Omega | Alpha & Omega | onsemi | Infineon | Renesas |
| Vdss (V) | 30 | 30 | 30 | 30 | 30 |
| Id @ 25°C Ta (A) | 24 | 54 | 26 | 32 | 65 |
| Id @ 25°C Tc (A) | 85 | 150 | 49 | 169 | N/A |
| Rds On (mOhm) @ 10V | 2.4 @ 20A | 1.7 @ 20A | 2.4 @ 26A | 2.1 @ 20A | 1.8 @ 25A |
| Gate Charge Qg (nC) @ 10V | 51 | 64 | 57 | 66 | 49 |
| Input Capacitance Ciss (pF) | 6780 @ 15V | 3430 @ 15V | 3550 @ 15V | 4960 @ 10V | 7650 @ 10V |
| Power Dissipation Ta (W) | 2.5 | 7.4 | 2.5 | 3.6 | N/A |
| Power Dissipation Tc (W) | 83 | 83 | 59 | 96 | 65 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | to 150 |
| Package Type | 8-DFN (5x6) | 8-DFN (5x6) | 8-PQFN (5x6) | PQFN (5x6) | 8-WPAK |
| Product Status | Obsolete | Not For New Designs | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
AON6512 (Alpha & Omega Semiconductor Inc.)
The AON6512 provides superior current handling with 54A (Ta) and 150A (Tc) ratings, exceeding AON6782 specifications. On-state resistance is reduced to 1.7mOhm, improving efficiency. Gate charge increases to 64nC, requiring verification of gate drive circuit capability. Input capacitance is significantly lower at 3430pF, reducing switching losses. Package remains 8-DFN (5x6), ensuring direct PCB compatibility. Product status is "Not For New Designs," limiting suitability for long-term production. RoHS3 and MSL Level 1 compliance maintained.
FDMS0306AS (onsemi)
The FDMS0306AS is an Active product offering direct electrical compatibility with 26A (Ta) and 49A (Tc) ratings. On-state resistance matches at 2.4mOhm. Gate charge is 57nC, slightly elevated from the original. Package is 8-PQFN (5x6), requiring PCB layout modification but maintaining identical footprint dimensions. Input capacitance is 3550pF, lower than the original. This part is recommended for new designs requiring long-term availability and active manufacturer support.
IRFH8311TRPBF (Infineon Technologies)
The IRFH8311TRPBF is an Active product with 32A (Ta) and 169A (Tc) ratings, providing enhanced current capacity. On-state resistance is 2.1mOhm, superior to the original. Gate charge is 66nC, requiring gate drive circuit evaluation. Package is PQFN (5x6), necessitating PCB layout modification. Input capacitance is 4960pF. Power dissipation at Tc reaches 96W, exceeding the original 83W. RoHS3 and MSL Level 1 compliance confirmed.
RJK0346DPA-01#J0B (Renesas Electronics Corporation)
The RJK0346DPA-01#J0B is an Active product rated for 65A (Ta) with 65W (Tc) power dissipation. On-state resistance is 1.8mOhm, providing superior efficiency. Gate charge is 49nC, lower than the original, reducing switching losses. Package is 8-WPAK, requiring significant PCB layout modification. Input capacitance is elevated at 7650pF. Operating temperature specification indicates 150°C maximum without lower bound specification. This part is suitable for high-current applications with thermal management capability.
Frequently Asked Questions (FAQ)
Q: Can the AON6512 directly replace the AON6782 without PCB modifications?
A: Yes. Both parts use the 8-DFN (5x6) package with identical footprint dimensions and pin configuration. However, gate drive circuits must accommodate the increased gate charge of 64nC versus 51nC. Verify that the gate driver provides sufficient current at the specified switching frequency.
Q: What are the package differences between substitute parts?
A: The AON6512 maintains 8-DFN (5x6) compatibility. The FDMS0306AS uses 8-PQFN (5x6), which has identical overall dimensions but different internal pad geometry. The IRFH8311TRPBF uses PQFN (5x6) with similar dimensions. The RJK0346DPA-01#J0B uses 8-WPAK, which is physically larger and requires PCB redesign. Consult package datasheets for precise pin locations and pad dimensions.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts carry RoHS3 compliance certification and MSL Level 1 (Unlimited) moisture sensitivity ratings, matching the original AON6782 specifications.
Q: Which substitute part is recommended for new production designs?
A: The FDMS0306AS (onsemi) is recommended for new designs. It maintains Active product status, provides direct electrical compatibility, and offers long-term manufacturer support. The IRFH8311TRPBF (Infineon) is also Active and suitable for applications requiring higher current capacity.
Q: How do gate charge differences affect circuit design?
A: Gate charge (Qg) determines the energy required to switch the MOSFET. The AON6782 requires 51nC, while substitutes range from 49nC to 66nC. Higher gate charge increases switching losses and requires higher gate drive current. Verify that the gate driver circuit can supply the required current at the target switching frequency without exceeding maximum gate voltage (±12V for AON6782, ±20V for most substitutes).
Q: What is the significance of Rds On differences?
A: On-state resistance (Rds On) directly affects conduction losses and heat generation. The AON6782 specifies 2.4mOhm @ 20A, 10V. Substitutes range from 1.7mOhm to 1.8mOhm, reducing conduction losses. Lower Rds On improves efficiency but may require thermal management evaluation due to increased power dissipation at higher currents.
Q: Can input capacitance variations affect switching performance?
A: Yes. Input capacitance (Ciss) affects switching speed and gate drive requirements. The AON6782 has 6780pF @ 15V, while substitutes range from 3430pF to 7650pF. Lower capacitance reduces switching losses and gate drive power consumption. Higher capacitance increases switching time and may require gate drive circuit adjustments.
Q: What does "Not For New Designs" status mean for the AON6512?
A: This designation indicates that while the part is currently available, the manufacturer does not recommend its use in new product development. Existing designs may continue using this part, but new applications should select Active alternatives such as FDMS0306AS or IRFH8311TRPBF to ensure long-term availability and manufacturer support.
Q: Are thermal characteristics equivalent across all substitutes?
A: No. Power dissipation ratings vary: AON6782 (83W Tc), AON6512 (83W Tc), FDMS0306AS (59W Tc), IRFH8311TRPBF (96W Tc), and RJK0346DPA-01#J0B (65W Tc). Thermal design must account for these differences. Higher power dissipation requires enhanced heat sinking or thermal management strategies.
Q: What compliance certifications are maintained across all parts?
A: All substitute parts maintain RoHS3 compliance, MSL Level 1 (Unlimited) moisture sensitivity rating, REACH Unaffected status, and EAR99 export classification, matching the original AON6782 certifications.
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