AON6764 N-Channel MOSFET 30V 85A Equivalent & Substitute Parts

Part Overview

The AON6764 is an N-Channel MOSFET rated for 30V drain-to-source voltage with 85A continuous drain current in a surface mount 8-DFN (5x6) package. This device features a Schottky body diode and is designed for high-current switching applications. The AON6764 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across voltage ratings, current handling, package form factor, and thermal characteristics to ensure functional equivalence in existing circuit designs.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	85	A
Rds On (Max) @ 20A, 10V	2.8	mOhm
Power Dissipation (Max)	42	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-DFN (5x6)	—
Vgs (Max)	±12	V
Gate Charge (Qg) @ 1V	37	nC

Substitute Part Grouping Explanation

Substitution of the AON6764 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating of 30V to ensure safe operation within the original circuit voltage envelope.

Current Handling: The continuous drain current (Id) must be sufficient to support the 85A requirement. Substitutes with equal or greater current ratings are acceptable.

On-Resistance (Rds On): The maximum on-resistance at specified gate-source voltage and drain current determines switching losses and thermal performance. Lower Rds On values indicate improved efficiency.

Package and Mounting: Surface mount packages with compatible footprints and thermal characteristics are required. Pin-compatible or functionally equivalent packages are acceptable.

Gate Voltage Rating (Vgs): The maximum gate-source voltage must accommodate the drive circuit specifications. Higher Vgs ratings provide additional design margin.

Thermal Performance: Power dissipation ratings and operating temperature ranges must support the application's thermal requirements.

Product Status and Compliance: Active product status ensures ongoing availability and support. RoHS and REACH compliance certifications confirm regulatory alignment.

Parameter Comparison

Parameter	AON6764 (Main)	AON6324	RJK03M2DPA-00#J5A	TPH3R203NL,L1Q
Manufacturer	Alpha & Omega Semiconductor	Alpha & Omega Semiconductor	Renesas Electronics	Toshiba Semiconductor
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss	30V	30V	30V	30V
Id @ 25°C	85A (Tc)	85A (Tc)	45A (Ta)	47A (Tc)
Rds On (Max) @ 10V	2.8 mOhm @ 20A	2.1 mOhm @ 20A	2.8 mOhm @ 22.5A	3.2 mOhm @ 23.5A
Vgs (Max)	±12V	±20V	±20V	±20V
Gate Charge (Qg)	37 nC @ 1V	28 nC @ 4.5V	21.2 nC @ 4.5V	21 nC @ 10V
Power Dissipation (Max)	42W (Tc)	83W (Tc)	40W (Tc)	44W (Tc)
Operating Temperature	-55 to 150°C	-55 to 150°C	150°C (TJ)	150°C (TJ)
Package	8-DFN (5x6)	8-DFN (5x6)	8-WPAK	8-SOP Advance (5x5)
Product Status	Obsolete	Active	Active	Active
RoHS Status	Not specified	RoHS3 Compliant	RoHS3 Compliant	RoHS Compliant

Engineering Selection Recommendations

AON6324 (Primary Substitute): The AON6324 is the recommended substitute for the AON6764. Both devices are manufactured by Alpha & Omega Semiconductor and share identical voltage and current ratings (30V, 85A). The AON6324 maintains the same 8-DFN (5x6) package footprint, ensuring direct PCB compatibility. The AON6324 is classified as active product status with RoHS3 compliance, providing long-term availability and regulatory alignment. The improved on-resistance (2.1 mOhm versus 2.8 mOhm) and increased power dissipation rating (83W versus 42W) offer enhanced thermal performance. The higher Vgs rating (±20V versus ±12V) provides additional gate drive margin.

RJK03M2DPA-00#J5A (Secondary Substitute): The Renesas RJK03M2DPA-00#J5A is an active product with RoHS3 compliance. This device maintains the 30V voltage rating and provides 45A continuous drain current, which is below the 85A requirement of the AON6764. The 8-WPAK package differs from the original 8-DFN footprint and requires PCB layout modification. This substitute is suitable only for applications where the 45A current rating is sufficient and package redesign is acceptable.

TPH3R203NL,L1Q (Secondary Substitute): The Toshiba TPH3R203NL,L1Q is an active product with RoHS compliance. This device maintains the 30V voltage rating and provides 47A continuous drain current, which is below the 85A requirement of the AON6764. The 8-SOP Advance (5x5) package differs from the original 8-DFN (5x6) footprint and requires PCB layout modification. This substitute is suitable only for applications where the 47A current rating is sufficient and package redesign is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the AON6324 be used as a direct replacement for the AON6764?

A: Yes. The AON6324 is a direct substitute with identical voltage (30V) and current (85A) ratings, the same 8-DFN (5x6) package footprint, and compatible operating temperature range (-55 to 150°C). No circuit modifications or PCB redesign are required.

Q: Why are the Renesas RJK03M2DPA-00#J5A and Toshiba TPH3R203NL,L1Q listed as substitutes if they have lower current ratings?

A: These devices are listed as substitutes because they maintain the critical 30V voltage rating and N-Channel MOSFET technology. However, their continuous drain current ratings (45A and 47A respectively) are significantly lower than the AON6764's 85A rating. These substitutes are only applicable to circuit designs that do not require the full 85A current capacity. Applications requiring the full 85A rating must use the AON6324.

Q: What is the significance of the different package types among the substitutes?

A: The AON6324 uses the same 8-DFN (5x6) package as the AON6764, enabling direct PCB compatibility without layout changes. The RJK03M2DPA-00#J5A (8-WPAK) and TPH3R203NL,L1Q (8-SOP Advance) use different packages that require PCB footprint redesign and potential thermal management adjustments. Package selection impacts thermal performance, board space utilization, and manufacturing processes.

Q: How do on-resistance differences affect circuit performance?

A: On-resistance (Rds On) directly determines conduction losses and heat generation during switching. The AON6324 exhibits lower on-resistance (2.1 mOhm) compared to the AON6764 (2.8 mOhm), resulting in reduced power dissipation and improved efficiency. Lower on-resistance also reduces voltage drop across the device during high-current operation.

Q: What does the higher power dissipation rating of the AON6324 indicate?

A: The AON6324's power dissipation rating of 83W (versus 42W for the AON6764) indicates improved thermal capability and margin for high-current applications. This higher rating reflects enhanced die design and packaging that allows the device to handle sustained power dissipation without exceeding maximum junction temperature limits.

Q: Are all substitute parts RoHS compliant?

A: The AON6324 and RJK03M2DPA-00#J5A are RoHS3 compliant. The TPH3R203NL,L1Q is RoHS compliant. All three substitutes meet current regulatory requirements for hazardous substance restrictions.

Q: What is the impact of different gate charge specifications?

A: Gate charge (Qg) affects the speed and energy required to switch the MOSFET on and off. Lower gate charge values (RJK03M2DPA-00#J5A at 21.2 nC, TPH3R203NL,L1Q at 21 nC) enable faster switching compared to the AON6764 (37 nC) and AON6324 (28 nC). Faster switching reduces switching losses but may require more robust gate drive circuits to manage the higher current rates.

Q: Can the AON6764 be replaced in designs requiring the full 85A rating?

A: Only the AON6324 provides equivalent 85A current capacity. The RJK03M2DPA-00#J5A and TPH3R203NL,L1Q are unsuitable for applications requiring the full 85A rating due to their lower current specifications.

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