AON6594 N-Channel MOSFET 30V 22A/35A Equivalent & Substitute Parts

Part Overview

The AON6594 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 22A (Ta) and 35A (Tc). The device is packaged in an 8-DFN (5x6) surface mount configuration and is classified as Not For New Designs. Due to this product status classification, equivalent and substitute parts with active or preferred status are available to support ongoing production requirements and new design initiatives.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	22	A
Continuous Drain Current @ 25°C (Tc)	35	A
On-Resistance (Rds On) @ 20A, 10V	7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.2	V
Gate Charge (Qg) @ 10V	22	nC
Input Capacitance (Ciss) @ 15V	1037	pF
Power Dissipation (Ta)	5	W
Power Dissipation (Tc)	39	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-DFN (5x6)	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the AON6594 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current: Must support minimum 22A (Ta) operation
On-Resistance (Rds On): Lower values indicate improved performance; substitutes with comparable or superior Rds On are acceptable
Gate Threshold Voltage (Vgs(th)): Must fall within compatible gate drive voltage ranges
Operating Temperature Range: Must support -55°C to 150°C minimum

Mechanical Compatibility Criteria:

Mounting Type: Surface mount only
Package Classification: 8-pin power surface mount packages (8-DFN, 8-PQFN, 8-HSMT, 8-TSON variants)
Lead Configuration: Flat leads compatible with standard PCB assembly processes

Regulatory Compliance:

RoHS3 Compliance required
Moisture Sensitivity Level (MSL): Level 1 (Unlimited) preferred
REACH Status: REACH Unaffected

The substitute parts listed below meet these criteria and are available as direct functional replacements for the AON6594 in applications requiring 30V N-Channel MOSFET operation.

Parameter Comparison

Parameter	AON6594	DMN3009LFV-7	IRFH3702TRPBF	RQ3E130BNTB	RQ3E150GNTB	TPN6R303NC,LQ	Unit
Manufacturer	Alpha & Omega	Diodes Inc.	Infineon	Rohm	Rohm	Toshiba	-
Vdss	30	30	30	30	30	30	V
Id (Ta)	22	-	16	13	15	20	A
Id (Tc)	35	60	42	-	39	-	A
Rds On (mOhm)	7 @ 20A, 10V	5.5 @ 30A, 10V	7.1 @ 16A, 10V	6 @ 13A, 10V	6.1 @ 15A, 10V	6.3 @ 10A, 10V	mOhm
Vgs(th)	2.2 @ 250µA	3 @ 250µA	2.35 @ 25µA	2.5 @ 1mA	2.5 @ 1mA	2.3 @ 200µA	V
Qg @ 10V	22	42	14 @ 4.5V	36	15.3	24	nC
Ciss @ 15V	1037	2000	1510	1900	850	1370	pF
Power Dissipation (Ta)	5	2	2.8	2	2	0.7	W
Power Dissipation (Tc)	39	-	-	-	17	19	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	8-DFN (5x6)	PowerDI3333-8	8-PQFN (3x3)	8-HSMT (3.2x3)	8-HSMT (3.2x3)	8-TSON Adv (3.1x3.1)	-
Product Status	Not For New Designs	Active	Not For New Designs	Active	Active	Active	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	-
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	-

Engineering Selection Recommendations

For Active Product Status Requirement:

If new design qualification or long-term production support is required, the following substitute parts carry Active product status:

DMN3009LFV-7 (Diodes Incorporated): Active status with superior continuous drain current (60A Tc) and improved on-resistance (5.5 mOhm). Suitable for applications requiring higher current capacity within the 30V rating.
RQ3E130BNTB (Rohm Semiconductor): Active status with 13A continuous drain current and 6 mOhm on-resistance. Appropriate for applications with moderate current requirements.
RQ3E150GNTB (Rohm Semiconductor): Active status with 15A (Ta) and 39A (Tc) continuous drain current and 6.1 mOhm on-resistance. Provides thermal performance comparable to the AON6594.
TPN6R303NC,LQ (Toshiba Semiconductor): Active status with 20A continuous drain current and 6.3 mOhm on-resistance. Offers performance characteristics closely aligned with the AON6594 specifications.

For Existing Production Support:

The IRFH3702TRPBF (Infineon Technologies) is classified as Not For New Designs but remains available with 16A (Ta) and 42A (Tc) continuous drain current. This part is suitable only for sustaining existing production of designs already qualified to this component.

Compliance Verification:

All substitute parts listed maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard PCB assembly and storage protocols. REACH Status is REACH Unaffected for all parts, confirming regulatory alignment.

Frequently Asked Questions (FAQ)

Q: Can the DMN3009LFV-7 directly replace the AON6594 in existing designs?

A: The DMN3009LFV-7 meets the electrical requirements for 30V operation and exceeds the continuous drain current specification. However, the package type differs (PowerDI3333-8 versus 8-DFN 5x6), requiring PCB layout modification. Electrical substitution is valid; mechanical redesign is necessary.

Q: What is the primary reason to substitute the AON6594?

A: The AON6594 carries a Not For New Designs product status. Substitution is recommended for new design initiatives to ensure long-term component availability and manufacturer support. Active-status alternatives provide equivalent or superior electrical performance.

Q: Are all substitute parts compatible with the same gate drive voltage?

A: All substitute parts operate within the ±20V gate voltage range and support 4.5V and 10V drive voltage levels, matching the AON6594 specification. Gate threshold voltages range from 2.2V to 3V, which is compatible with standard gate driver circuits designed for the AON6594.

Q: Which substitute part offers the lowest on-resistance?

A: The DMN3009LFV-7 provides the lowest on-resistance at 5.5 mOhm (measured at 30A, 10V), compared to the AON6594 at 7 mOhm (measured at 20A, 10V). Lower on-resistance reduces power dissipation in high-current applications.

Q: Can I use the RQ3E130BNTB if my application requires 22A continuous current?

A: The RQ3E130BNTB is rated for 13A continuous drain current at 25°C (Ta), which is below the 22A requirement of the AON6594. This part is not suitable for applications requiring 22A continuous operation. The RQ3E150GNTB (15A Ta) or TPN6R303NC,LQ (20A Ta) are more appropriate selections.

Q: What are the package footprint differences between substitute parts?

A: The AON6594 uses an 8-DFN (5x6) package. Substitute parts employ different 8-pin power surface mount packages: DMN3009LFV-7 (PowerDI3333-8), IRFH3702TRPBF (8-PQFN 3x3), RQ3E130BNTB and RQ3E150GNTB (8-HSMT 3.2x3), and TPN6R303NC,LQ (8-TSON Advance 3.1x3.1). Each requires distinct PCB footprint design.

Q: Are all substitute parts available in tape and reel packaging?

A: The AON6594, DMN3009LFV-7, IRFH3702TRPBF, and TPN6R303NC,LQ are supplied in Tape & Reel (TR) packaging. The RQ3E130BNTB and RQ3E150GNTB are supplied in Cut Tape (CT) & Digi-Reel® packaging. Packaging format should be verified against assembly process requirements.

Q: Which substitute part has the lowest gate charge?

A: The IRFH3702TRPBF has the lowest gate charge at 14 nC (measured at 4.5V), compared to the AON6594 at 22 nC (measured at 10V). Lower gate charge reduces gate driver power consumption and switching losses.

Q: Is thermal performance equivalent across all substitute parts?

A: Thermal performance varies. The AON6594 dissipates 39W at Tc. The DMN3009LFV-7 does not specify Tc power dissipation. The RQ3E150GNTB dissipates 17W at Tc, and the TPN6R303NC,LQ dissipates 19W at Tc. Thermal design analysis is required for each substitute based on specific application duty cycle.

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