AON6562 Equivalent & Substitute Parts

Part Overview

The AON6562 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 29A (Ta) and 32A (Tc). This device is housed in an 8-DFN (5x6) surface mount package and is part of the AlphaMOS series. The AON6562 is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the surface mount package format.

Substiute Parts

AON6562

Alpha & Omega Semiconductor Inc.In Stock: 18118AON6562 Datasheet

Current PartRFQ

CSD17579Q5AT

Texas InstrumentsIn Stock: 2778CSD17579Q5AT Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AON6562 is based on strict electrical and mechanical parameter alignment. The primary substitute, CSD17579Q5AT from Texas Instruments, qualifies as an equivalent based on the following criteria:

Voltage Rating Compatibility: Both devices maintain identical 30V drain-to-source voltage (Vdss) ratings, ensuring direct compatibility in circuits designed for this voltage class.

Current Capacity: The AON6562 specifies 29A continuous drain current (Ta) and 32A (Tc). The CSD17579Q5AT provides 25A continuous drain current (Ta), representing a 13.8% reduction in Ta-rated current. This reduction must be evaluated against specific application requirements.

On-Resistance Characteristics: The AON6562 exhibits 5 mOhm maximum on-resistance at 20A and 10V gate-source voltage. The CSD17579Q5AT specifies 9.7 mOhm maximum on-resistance at 8A and 10V gate-source voltage. The higher on-resistance of the substitute results in increased power dissipation and heat generation.

Gate Charge and Switching Performance: The AON6562 gate charge is 33 nC at 10V, while the CSD17579Q5AT provides 15.1 nC at 10V. The lower gate charge of the substitute enables faster switching transitions and reduced gate drive power requirements.

Thermal Performance: The AON6562 dissipates 6W (Ta) and 25W (Tc). The CSD17579Q5AT dissipates 3.1W (Ta) and 36W (Tc), indicating different thermal characteristics under various operating conditions.

Package Compatibility: Both devices utilize 8-pin surface mount packages with 5x6mm footprints (8-DFN and 8-VSONP respectively), permitting direct PCB layout compatibility.

Temperature Range: Both devices operate across -55°C to 150°C junction temperature range, maintaining identical thermal operating specifications.

Parameter Comparison

Engineering Selection Recommendations

The CSD17579Q5AT from Texas Instruments is the manufacturer-recommended substitute for the obsolete AON6562. Selection of this substitute is supported by the following engineering considerations:

Product Status and Availability: The AON6562 is classified as obsolete, while the CSD17579Q5AT maintains active product status with documented inventory availability. Active status ensures continued manufacturing support, technical documentation, and supply chain reliability.

Regulatory Compliance: Both devices maintain identical REACH Unaffected and EAR99 ECCN classifications, ensuring equivalent regulatory compliance across international markets. The CSD17579Q5AT carries ROHS3 Compliant certification, providing additional environmental compliance assurance.

Electrical Compatibility: The devices share identical 30V voltage ratings and ±20V gate-source voltage specifications. Operating temperature ranges are identical across -55°C to 150°C junction temperature. These parameters establish baseline electrical compatibility for direct substitution in voltage-regulated applications.

Current and Thermal Trade-offs: The CSD17579Q5AT provides 25A continuous drain current (Ta) compared to the AON6562's 29A specification, representing a 13.8% current reduction. Applications operating at or below 25A continuous current experience no functional limitation. Applications requiring current levels between 25A and 29A require thermal analysis and potential circuit redesign. The substitute exhibits higher on-resistance (9.7 mOhm versus 5 mOhm), resulting in increased conduction losses. Conversely, the lower gate charge (15.1 nC versus 33 nC) reduces switching losses and gate drive power requirements.

Package Compatibility: Both devices utilize 5x6mm surface mount packages with 8-pin configurations. PCB layout compatibility is maintained, though pin-to-pin verification against specific device datasheets is required prior to implementation.

Switching Performance: The CSD17579Q5AT's reduced gate charge enables faster switching transitions, potentially improving efficiency in high-frequency switching applications. This characteristic may offset increased conduction losses in certain circuit topologies.

Frequently Asked Questions (FAQ)

Q: Can the CSD17579Q5AT directly replace the AON6562 in all applications?

A: Direct replacement is possible in applications where continuous drain current does not exceed 25A. Applications requiring current levels between 25A and 29A require thermal analysis and potential circuit redesign to accommodate the substitute's higher on-resistance and different thermal characteristics.

Q: What are the primary electrical differences between these devices?

A: The CSD17579Q5AT exhibits higher on-resistance (9.7 mOhm versus 5 mOhm), resulting in increased conduction losses. The substitute provides lower gate charge (15.1 nC versus 33 nC), enabling faster switching and reduced gate drive power. Both devices maintain identical 30V voltage ratings and operating temperature ranges.

Q: Are the packages physically compatible?

A: Both devices utilize 8-pin surface mount packages with 5x6mm footprints. The AON6562 uses 8-DFN packaging while the CSD17579Q5AT uses 8-VSONP packaging. Physical footprints are compatible, but pin-to-pin verification against device datasheets is required to confirm functional compatibility in specific circuit designs.

Q: How does the higher on-resistance of the CSD17579Q5AT affect circuit performance?

A: Higher on-resistance increases conduction losses and heat dissipation during device operation. In applications operating at continuous currents below 25A, this effect is typically manageable with appropriate thermal management. Applications operating at higher current levels or with stringent thermal constraints require detailed thermal analysis.

Q: What is the significance of the lower gate charge in the CSD17579Q5AT?

A: Lower gate charge (15.1 nC versus 33 nC) reduces the charge required to switch the device on and off, enabling faster switching transitions and reduced gate drive power consumption. This characteristic is beneficial in high-frequency switching applications and reduces overall system power dissipation.

Q: Are there regulatory or compliance differences between these devices?

A: Both devices maintain identical REACH Unaffected and EAR99 ECCN classifications. The CSD17579Q5AT carries additional ROHS3 Compliant certification. Both devices have MSL 1 (Unlimited) moisture sensitivity ratings, indicating equivalent handling requirements.

Q: What thermal considerations apply when substituting the CSD17579Q5AT?

A: The CSD17579Q5AT exhibits different thermal characteristics: 3.1W (Ta) and 36W (Tc) compared to the AON6562's 6W (Ta) and 25W (Tc). The substitute's higher on-resistance generates increased conduction losses. Thermal management design must account for these differences, particularly in applications with elevated ambient temperatures or limited heat dissipation capability.

Q: Is the CSD17579Q5AT suitable for high-frequency switching applications?

A: The CSD17579Q5AT's lower gate charge (15.1 nC) and lower input capacitance (1030 pF versus 1550 pF) support faster switching transitions, making it suitable for high-frequency applications. The reduced switching losses may offset increased conduction losses in certain circuit topologies.