AON6546 Equivalent & Substitute Parts

Part Overview

The AON6546 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 22A (Ta) and 55A (Tc). The device is housed in an 8-DFN (5x6) surface mount package and is designed for applications requiring efficient switching and power management in compact form factors.

The AON6546 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	22	A
Continuous Drain Current @ 25°C (Tc)	55	A
On-Resistance (Rds On) @ 20A, 10V	7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	30	nC
Input Capacitance (Ciss) @ 15V	1210	pF
Power Dissipation (Ta)	5.5	W
Power Dissipation (Tc)	35.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-DFN (5x6)	Surface Mount
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the AON6546 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current: Must support minimum 22A (Ta) operation
On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Threshold Voltage (Vgs(th)): Must remain within ±20V gate voltage specification
Gate Charge (Qg) and Input Capacitance (Ciss): Affect switching speed and drive requirements

Mechanical Compatibility Criteria:

Mounting Type: Surface mount only
Package Classification: 8-pin power packages (DFN, HSMT, TSON variants)
Thermal Performance: Must support equivalent or superior power dissipation ratings

Compliance Criteria:

RoHS3 Compliance required
Moisture Sensitivity Level 1 (Unlimited) preferred
Operating temperature range: -55°C to 150°C minimum

The three substitute parts listed below meet these criteria with variations in package footprint and current rating specifications.

Parameter Comparison

Parameter	AON6546	RQ3E130BNTB	RQ3E150GNTB	TPN6R303NC,LQ	Unit
Manufacturer	Alpha & Omega Semiconductor	Rohm Semiconductor	Rohm Semiconductor	Toshiba Semiconductor
Product Status	Obsolete	Active	Active	Active
Vdss	30	30	30	30	V
Continuous Drain Current (Ta)	22	13	15	20	A
Continuous Drain Current (Tc)	55	—	39	—	A
Rds On (Max) @ 10V	7 @ 20A	6 @ 13A	6.1 @ 15A	6.3 @ 10A	mOhm
Vgs(th) (Max)	2.5 @ 250µA	2.5 @ 1mA	2.5 @ 1mA	2.3 @ 200µA	V
Gate Charge (Qg) @ 10V	30	36	15.3	24	nC
Input Capacitance (Ciss) @ 15V	1210	1900	850	1370	pF
Power Dissipation (Ta)	5.5	2	2	0.7	W
Power Dissipation (Tc)	35.5	—	17	19	W
Operating Temperature (TJ)	-55 to 150	150	150	150	°C
Package Type	8-DFN (5x6)	8-HSMT (3.2x3)	8-HSMT (3.2x3)	8-TSON Advance (3.1x3.1)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

RQ3E130BNTB (Rohm Semiconductor)

The RQ3E130BNTB is an active product with ROHS3 compliance and MSL 1 rating. This substitute operates at 13A continuous drain current (Ta), which is below the AON6546 specification of 22A. The on-resistance of 6 mOhm at 13A is superior to the AON6546 at equivalent voltage. The 8-HSMT (3.2x3) package is significantly smaller than the 8-DFN (5x6) footprint. This substitute is suitable for applications where current requirements do not exceed 13A and where reduced package size is advantageous.

RQ3E150GNTB (Rohm Semiconductor)

The RQ3E150GNTB is an active product with ROHS3 compliance and MSL 1 rating. This substitute operates at 15A continuous drain current (Ta) and 39A (Tc), approaching the AON6546 performance envelope. The on-resistance of 6.1 mOhm at 15A is comparable to the original device. Gate charge is significantly lower at 15.3 nC, reducing switching losses. Input capacitance is reduced to 850 pF, improving high-frequency performance. The 8-HSMT (3.2x3) package provides a smaller footprint. This substitute is suitable for applications requiring 15A continuous operation with improved switching characteristics.

TPN6R303NC,LQ (Toshiba Semiconductor)

The TPN6R303NC,LQ is an active product with RoHS compliance and MSL 1 rating. This substitute operates at 20A continuous drain current (Ta), closely matching the AON6546 specification of 22A. The on-resistance of 6.3 mOhm at 10A is competitive. Gate charge of 24 nC is lower than the original device, reducing drive requirements. The 8-TSON Advance (3.1x3.1) package is compact while maintaining thermal performance. This substitute provides the closest electrical performance match to the AON6546 with active product status and full compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can the RQ3E130BNTB replace the AON6546 in all applications?

A: The RQ3E130BNTB is suitable only for applications where continuous drain current does not exceed 13A. If the design requires 22A operation, this substitute is not appropriate. Verify actual circuit current requirements before selection.

Q: What is the primary advantage of the RQ3E150GNTB over the AON6546?

A: The RQ3E150GNTB offers lower gate charge (15.3 nC vs. 30 nC) and reduced input capacitance (850 pF vs. 1210 pF), resulting in faster switching transitions and reduced drive power requirements. The 8-HSMT package also provides a smaller footprint.

Q: Is the TPN6R303NC,LQ the best substitute for the AON6546?

A: The TPN6R303NC,LQ provides the closest electrical performance match with 20A continuous drain current, comparable on-resistance, and active product status. However, the optimal substitute depends on specific application requirements including current rating, package size constraints, and thermal management needs.

Q: Are all three substitutes pin-compatible with the AON6546?

A: All three substitutes are 8-pin surface mount devices with similar pinout configurations for N-Channel MOSFETs. However, package footprints differ: AON6546 uses 8-DFN (5x6), while substitutes use 8-HSMT (3.2x3) or 8-TSON Advance (3.1x3.1). PCB layout modifications are required.

Q: Do all substitutes meet the same compliance standards as the AON6546?

A: All substitutes are RoHS compliant with MSL 1 (Unlimited) moisture sensitivity rating. The AON6546 and RQ3E series are ROHS3 compliant, while the TPN6R303NC,LQ is RoHS compliant. Both compliance levels are acceptable for most applications.

Q: What is the temperature operating range for the substitute parts?

A: All substitute parts support a maximum junction temperature (TJ) of 150°C. The AON6546 specifies -55°C to 150°C. Verify minimum operating temperature requirements for your specific application.

Q: How do gate charge differences affect circuit design?

A: Lower gate charge reduces the energy required to switch the MOSFET on and off, decreasing driver power dissipation and enabling faster switching. The RQ3E150GNTB (15.3 nC) and TPN6R303NC,LQ (24 nC) both offer improvements over the AON6546 (30 nC) in this parameter.

Q: Can I use multiple lower-current substitutes in parallel to achieve 22A operation?

A: Parallel operation of MOSFETs requires careful design consideration including matched on-resistance, gate drive distribution, and thermal management. This approach is not a direct substitution and requires detailed circuit analysis.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message