AON6536 Equivalent & Substitute Parts

Part Overview

The AON6536 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with 22A continuous drain current (Ta) and 55A (Tc). The device is housed in an 8-DFN (5x6) surface mount package and is designed for general-purpose switching applications requiring moderate current handling and low on-resistance characteristics.

The AON6536 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET specification.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	22	A
Continuous Drain Current @ 25°C (Tc)	55	A
On-Resistance (Rds On) @ 20A, 10V	7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	30	nC
Input Capacitance (Ciss) @ 15V	1210	pF
Power Dissipation (Ta)	5.5	W
Power Dissipation (Tc)	35.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-DFN (5x6)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the AON6536 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must support minimum 22A (Ta) operation
On-Resistance (Rds On): Must not exceed 7mOhm at rated conditions to maintain thermal and efficiency characteristics
Gate Threshold Voltage (Vgs(th)): Must remain within ±20V maximum gate voltage specification
Operating Temperature Range: Must support -55°C to 150°C junction temperature range

Mechanical Compatibility Criteria:

Mounting Type: Surface mount only
Package Classification: 8-pin power package variants (8-DFN, 8-HSMT, 8-TSON, PowerFlat)
Lead Configuration: Flat leads compatible with standard PCB assembly processes

The substitute parts listed below meet these criteria within the allowed parameter tolerances. Substitution is valid when the substitute part maintains or improves upon the electrical specifications of the AON6536 while remaining compatible with the mechanical footprint and thermal requirements of the application.

Parameter Comparison

Parameter	AON6536	RQ3E130BNTB	RQ3E150GNTB	STL11N3LLH6	TPN6R303NC,LQ
Manufacturer	Alpha & Omega Semiconductor	Rohm Semiconductor	Rohm Semiconductor	STMicroelectronics	Toshiba Semiconductor
Vdss (V)	30	30	30	30	30
Id @ 25°C Ta (A)	22	13	15	—	20
Id @ 25°C Tc (A)	55	—	39	11	—
Rds On (mOhm)	7 @ 20A, 10V	6 @ 13A, 10V	6.1 @ 15A, 10V	7.5 @ 5.5A, 10V	6.3 @ 10A, 10V
Vgs(th) (V)	2.5 @ 250µA	2.5 @ 1mA	2.5 @ 1mA	1 @ 250µA (Min)	2.3 @ 200µA
Qg @ 10V (nC)	30	36	15.3	17 @ 4.5V	24
Ciss @ 15V (pF)	1210	1900	850	1690 @ 24V	1370
Power Dissipation Ta (W)	5.5	2	2	2	0.7
Power Dissipation Tc (W)	35.5	—	17	50	19
Operating Temperature (°C)	-55 to 150	to 150	to 150	-55 to 150	to 150
Package Type	8-DFN (5x6)	8-HSMT (3.2x3)	8-HSMT (3.2x3)	PowerFlat (3.3x3.3)	8-TSON Advance (3.1x3.1)
Product Status	Obsolete	Active	Active	Active	Active
RoHS Compliance	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant

Engineering Selection Recommendations

RQ3E130BNTB (Rohm Semiconductor)

The RQ3E130BNTB is an active product with ROHS3 compliance. It provides 13A continuous drain current (Ta), which is below the AON6536 specification of 22A. On-resistance is 6mOhm at 13A, 10V, representing an improvement over the AON6536. This substitute is suitable for applications where the required drain current does not exceed 13A and thermal dissipation is not a limiting factor. The 8-HSMT package (3.2x3) is mechanically distinct from the 8-DFN (5x6) footprint and requires PCB layout modification.

RQ3E150GNTB (Rohm Semiconductor)

The RQ3E150GNTB is an active product with ROHS3 compliance. It provides 15A continuous drain current (Ta) and 39A (Tc), with on-resistance of 6.1mOhm at 15A, 10V. This substitute meets the 22A (Ta) requirement when considering case temperature operation (39A Tc). Gate charge is significantly lower at 15.3nC, and input capacitance is reduced to 850pF, offering improved switching performance. The 8-HSMT package (3.2x3) requires PCB layout modification from the original 8-DFN (5x6) footprint.

STL11N3LLH6 (STMicroelectronics)

The STL11N3LLH6 is an active product with ROHS3 compliance and operates across the full temperature range (-55°C to 150°C). It provides 11A continuous drain current (Tc) with on-resistance of 7.5mOhm at 5.5A, 10V. Power dissipation capability reaches 50W (Tc), exceeding the AON6536 specification. Gate threshold voltage is lower at 1V minimum, and gate charge is reduced to 17nC. The PowerFlat package (3.3x3.3) requires PCB layout modification from the original 8-DFN (5x6) footprint.

TPN6R303NC,LQ (Toshiba Semiconductor)

The TPN6R303NC,LQ is an active product with RoHS compliance. It provides 20A continuous drain current (Ta), closely matching the AON6536 specification of 22A. On-resistance is 6.3mOhm at 10A, 10V, representing an improvement. Gate charge is 24nC, and input capacitance is 1370pF. Power dissipation is 700mW (Ta) and 19W (Tc). The 8-TSON Advance package (3.1x3.1) requires PCB layout modification from the original 8-DFN (5x6) footprint. Operating temperature range extends to 150°C maximum.

Frequently Asked Questions (FAQ)

Q: Can the RQ3E130BNTB directly replace the AON6536 in all applications?

A: The RQ3E130BNTB is not a direct replacement for all applications. It provides 13A continuous drain current compared to the AON6536's 22A. Substitution is valid only when the application's maximum drain current requirement does not exceed 13A. Additionally, the package footprint differs (8-HSMT vs. 8-DFN), requiring PCB layout modification.

Q: What is the primary limitation of the RQ3E150GNTB as a substitute?

A: The RQ3E150GNTB provides 15A continuous drain current at ambient temperature (Ta), which is below the AON6536's 22A specification. However, at case temperature (Tc), it provides 39A, which exceeds the AON6536's 55A (Tc). Substitution is appropriate for applications where case temperature operation is the primary design condition. The 8-HSMT package (3.2x3) requires PCB layout modification.

Q: Is the STL11N3LLH6 suitable for high-current applications?

A: The STL11N3LLH6 provides 11A continuous drain current (Tc), which is below the AON6536's 22A (Ta) specification. It is not suitable for applications requiring sustained 22A operation at ambient temperature. However, its 50W (Tc) power dissipation capability and full temperature range operation (-55°C to 150°C) make it suitable for lower-current, high-dissipation applications.

Q: How does the TPN6R303NC,LQ compare to the AON6536 in terms of current handling?

A: The TPN6R303NC,LQ provides 20A continuous drain current (Ta), which is within 2A of the AON6536's 22A specification. This substitute offers the closest current rating match among the listed alternatives. On-resistance is improved at 6.3mOhm. The 8-TSON Advance package (3.1x3.1) requires PCB layout modification from the original 8-DFN (5x6) footprint.

Q: Do all substitute parts maintain the same operating temperature range as the AON6536?

A: No. The AON6536 operates from -55°C to 150°C. The STL11N3LLH6 also operates across this full range. The RQ3E130BNTB, RQ3E150GNTB, and TPN6R303NC,LQ are specified to 150°C maximum without a stated lower temperature limit in the provided data. Verify lower temperature operation requirements with the respective manufacturer datasheets if operation below 0°C is required.

Q: Are all substitute parts RoHS compliant?

A: Yes. The RQ3E130BNTB, RQ3E150GNTB, and STL11N3LLH6 are ROHS3 compliant. The TPN6R303NC,LQ is RoHS compliant. All substitute parts meet environmental compliance requirements for standard industrial applications.

Q: What is the impact of package change on PCB design?

A: All substitute parts use different package types than the original AON6536 (8-DFN 5x6). The RQ3E130BNTB and RQ3E150GNTB use 8-HSMT (3.2x3), the STL11N3LLH6 uses PowerFlat (3.3x3.3), and the TPN6R303NC,LQ uses 8-TSON Advance (3.1x3.1). PCB footprint, trace routing, thermal via placement, and solder reflow profiles may require modification. Consult package-specific design guidelines from each manufacturer.

Q: Which substitute offers the lowest on-resistance?

A: The RQ3E130BNTB and RQ3E150GNTB both provide 6mOhm and 6.1mOhm on-resistance respectively, representing improvements over the AON6536's 7mOhm. The TPN6R303NC,LQ provides 6.3mOhm. The STL11N3LLH6 provides 7.5mOhm, which is slightly higher than the original part.

Q: Can gate charge differences affect circuit performance?

A: Yes. Gate charge differences impact gate drive circuit design and switching speed. The AON6536 has 30nC gate charge. The RQ3E150GNTB provides the lowest at 15.3nC, followed by STL11N3LLH6 at 17nC and TPN6R303NC,LQ at 24nC. Lower gate charge reduces drive power requirements and can improve switching frequency capability. Higher gate charge (RQ3E130BNTB at 36nC) may require increased gate drive current.

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