AON6534 N-Channel MOSFET 30V 20A/30A Equivalent & Substitute Parts

Part Overview

The AON6534 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 20A at Ta (ambient temperature) and 30A at Tc (case temperature). The device is housed in an 8-DFN (5x6) surface mount package and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across voltage ratings, current handling, gate charge characteristics, and thermal performance parameters while accommodating package variations.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	20	A
Continuous Drain Current @ 25°C (Tc)	30	A
On-Resistance (Rds On) @ 20A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.6	V
Gate Charge (Qg) @ 10V	22.5	nC
Input Capacitance (Ciss) @ 15V	951	pF
Power Dissipation (Ta)	4.1	W
Power Dissipation (Tc)	25	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-DFN (5x6)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution of the AON6534 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
Continuous Drain Current: Must support minimum 20A at Ta or equivalent thermal performance at Tc
On-Resistance (Rds On): Must not exceed 8mOhm at specified gate voltage and current
Gate Charge (Qg): Must remain within acceptable switching loss parameters
Operating Temperature Range: Must support -55°C to 150°C minimum
Package Type: Surface mount 8-pin configurations (DFN, VSON, TDSON, PowerFlat variants acceptable)
Mounting Type: Surface mount only

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Acceptable range 1.7V to 3.0V
Input Capacitance (Ciss): Acceptable range 500pF to 1700pF
Maximum Gate Voltage (Vgs): Must support ±20V or greater

All substitute parts listed maintain N-Channel MOSFET technology with metal oxide construction and are classified as either Active or Obsolete status. Package footprint compatibility is confirmed for all listed substitutes within 8-pin surface mount families.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Ta (A)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Vgs(th) (V)	Package	Status
AON6534	Alpha & Omega	30	20	30	8.0	22.5	951	2.6	8-DFN (5x6)	Obsolete
BSC080N03LSGATMA1	Infineon	30	14	53	8.0	21	1700	2.2	PG-TDSON-8-5	Obsolete
CSD17302Q5A	Texas Instruments	30	16	87	7.9	7	950	1.7	8-VSONP (5x6)	Active
CSD17307Q5A	Texas Instruments	30	14	73	10.5	5.2	700	1.8	8-VSONP (5x6)	Active
CSD17322Q5A	Texas Instruments	30	—	87	8.8	4.3	695	2.0	8-VSONP (5x6)	Active
CSD17507Q5A	Texas Instruments	30	13	65	10.8	3.6	530	2.1	8-VSONP (5x6)	Active
CSD17522Q5A	Texas Instruments	30	—	87	8.1	4.3	695	2.0	8-VSONP (5x6)	Active
CSD17527Q5A	Texas Instruments	30	—	65	10.8	3.4	506	2.0	8-VSONP (5x6)	Active
STL66N3LLH5	STMicroelectronics	30	—	80	5.8	12	1500	3.0	PowerFlat (5x6)	Active

Engineering Selection Recommendations

Active Status Preference: All substitute parts with Active product status are preferred for new designs and long-term production. Active parts include the complete Texas Instruments NexFET™ series (CSD17302Q5A, CSD17307Q5A, CSD17322Q5A, CSD17507Q5A, CSD17522Q5A, CSD17527Q5A) and the STMicroelectronics STL66N3LLH5. These devices ensure ongoing availability, technical support, and manufacturing continuity.

Compliance and Certification:

CSD17302Q5A, CSD17307Q5A, CSD17322Q5A, CSD17507Q5A, CSD17522Q5A, CSD17527Q5A: RoHS3 Compliant
STL66N3LLH5: RoHS3 Compliant, AEC-Q101 Automotive Qualified, supports extended operating temperature to 175°C

Current Handling Equivalence: For applications requiring 20A continuous drain current at ambient temperature, CSD17302Q5A (16A Ta, 87A Tc) and CSD17307Q5A (14A Ta, 73A Tc) provide the closest electrical match. CSD17507Q5A (13A Ta, 65A Tc) operates below the 20A Ta specification and is suitable only for applications where case temperature rating is the primary design constraint.

On-Resistance Performance: CSD17302Q5A delivers 7.9mOhm at 14A/8V, providing superior efficiency compared to the AON6534's 8.0mOhm at 20A/10V. STL66N3LLH5 offers the lowest on-resistance at 5.8mOhm but operates at different gate voltage conditions (10.5A/10V).

Gate Charge Characteristics: Texas Instruments NexFET™ devices exhibit significantly lower gate charge (3.4 to 7 nC) compared to the AON6534 (22.5 nC), resulting in reduced switching losses and improved high-frequency performance. This characteristic is particularly advantageous in power conversion applications.

Package Considerations: All substitute parts maintain 5x6mm footprint compatibility. Package variants include 8-VSONP (Texas Instruments), PG-TDSON-8-5 (Infineon), and PowerFlat™ (STMicroelectronics). PCB layout modifications may be required due to different lead configurations and thermal pad designs.

Frequently Asked Questions (FAQ)

Q: Can the AON6534 be directly replaced with any of the listed substitutes without PCB modification?

A: Direct replacement without PCB modification is not guaranteed. While all substitute parts maintain the 5x6mm footprint, package variants (8-VSONP, PG-TDSON-8-5, PowerFlat™) have different lead configurations and thermal pad geometries. PCB layout review is required to confirm compatibility with existing trace routing and thermal management design.

Q: Which substitute part is the best choice for new designs?

A: CSD17302Q5A is recommended for new designs. It is Active status, RoHS3 compliant, offers superior gate charge performance (7 nC vs. 22.5 nC), and provides 16A continuous drain current at ambient temperature, closely matching the AON6534's 20A specification. Texas Instruments provides comprehensive technical documentation and long-term availability assurance.

Q: What is the significance of the difference between Ta (ambient) and Tc (case) current ratings?

A: Ta (ambient temperature) rating represents continuous drain current under natural convection cooling at 25°C ambient. Tc (case temperature) rating represents continuous drain current when the device case is maintained at 25°C through active cooling or thermal management. Tc ratings are typically higher because they assume superior heat dissipation. Design selection must account for the actual thermal environment and cooling strategy employed.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant. The AON6534 is not explicitly listed with RoHS status in the provided data. If RoHS compliance is a design requirement, all substitute parts satisfy this criterion.

Q: What is the impact of lower gate charge on circuit performance?

A: Lower gate charge (Qg) reduces the energy required to switch the MOSFET on and off, resulting in lower switching losses, reduced heat generation, and improved efficiency in high-frequency applications. Texas Instruments NexFET™ devices (3.4 to 7 nC) demonstrate this advantage over the AON6534 (22.5 nC), making them suitable for applications where switching frequency exceeds 100 kHz.

Q: Can the STL66N3LLH5 be used in applications requiring the full -55°C to 150°C temperature range?

A: The STL66N3LLH5 supports an extended operating temperature range of -55°C to 175°C, exceeding the AON6534's -55°C to 150°C specification. It is suitable for all applications within the AON6534's temperature range and additionally supports higher-temperature environments. AEC-Q101 automotive qualification provides additional reliability assurance for demanding applications.

Q: What are the key electrical differences between the Texas Instruments NexFET™ series substitutes?

A: The NexFET™ series substitutes differ primarily in continuous drain current ratings and gate charge characteristics. CSD17302Q5A provides the highest Ta rating (16A) and moderate gate charge (7 nC). CSD17307Q5A offers 14A Ta with lower gate charge (5.2 nC). CSD17507Q5A, CSD17522Q5A, and CSD17527Q5A are optimized for high Tc ratings (65A to 87A) with minimal Ta specifications, suitable for applications where thermal management is actively controlled.

Q: Is the Infineon BSC080N03LSGATMA1 a viable substitute despite its Obsolete status?

A: The BSC080N03LSGATMA1 is electrically compatible with the AON6534 (30V, 8mOhm Rds On, 21 nC gate charge) but shares the same obsolete status. It is not recommended for new designs due to limited future availability. Existing inventory may support legacy production requirements, but Active alternatives should be prioritized for long-term sustainability.

Q: How does input capacitance (Ciss) affect circuit design?

A: Input capacitance affects gate drive circuit design, particularly the required gate driver current and switching speed. Higher Ciss (951 pF for AON6534, 1700 pF for BSC080N03LSGATMA1) requires more gate charge and may necessitate higher-current gate drivers. Lower Ciss devices (506 to 700 pF for select NexFET™ parts) reduce gate driver requirements and enable faster switching transitions, beneficial in high-frequency applications.

Q: What packaging considerations apply when switching from 8-DFN to 8-VSONP?

A: Both packages maintain 5x6mm footprints but differ in lead configuration and thermal pad design. 8-VSONP (VSON = Very Small Outline No-Lead) features exposed leads on package sides, while 8-DFN (Dual Flat No-Lead) has leads on two sides. Thermal pad size and location may differ, affecting PCB thermal via placement and heat dissipation efficiency. Detailed package drawings from the respective manufacturers must be reviewed before PCB redesign.

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