AON6520 Equivalent & Substitute Parts

Part Overview

The AON6520 is an N-Channel 30V MOSFET manufactured by Alpha & Omega Semiconductor Inc., designed for surface mount applications in the 8-DFN (5x6) package. This device delivers 11A continuous drain current at 25°C (Ta) and 50A at case temperature (Tc), with a maximum on-resistance of 8.5mOhm at 20A and 10V gate-source voltage. The AON6520 is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design continuity. Alternative components with comparable electrical characteristics and compatible packaging are available from multiple manufacturers.

Substiute Parts

AON6520
Alpha & Omega Semiconductor Inc.In Stock: 9489AON6520 Datasheet
AON6520
Current Part
AON7400A
Alpha & Omega Semiconductor Inc.In Stock: 250265AON7400A Datasheet
AON7400A
MFR Recommended
RQ3E120BNTB
Rohm SemiconductorIn Stock: 3903RQ3E120BNTB Datasheet
RQ3E120BNTB
Direct
IRFH8334TRPBF
Infineon TechnologiesIn Stock: 25191IRFH8334TRPBF Datasheet
IRFH8334TRPBF
MFR Recommended
RS1E150GNTB
Rohm SemiconductorIn Stock: 1877RS1E150GNTB Datasheet
RS1E150GNTB
MFR Recommended
TPH8R903NL,LQ
Toshiba Semiconductor and StorageIn Stock: 4350TPH8R903NL,LQ Datasheet
TPH8R903NL,LQ
MFR Recommended
TPN11003NL,LQ
Toshiba Semiconductor and StorageIn Stock: 12179TPN11003NL,LQ Datasheet
TPN11003NL,LQ
MFR Recommended

Key Parameters

Parameter AON6520 Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 11 A
Continuous Drain Current @ Case Temp (Tc) 50 A
Rds On (Max) @ 20A, 10V 8.5 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.5 V
Gate Charge (Qg) @ 10V 24 nC
Input Capacitance (Ciss) @ 15V 1380 pF
Power Dissipation (Ta) 1.9 W
Power Dissipation (Tc) 31 W
Operating Temperature Range -55 to 150 °C
Package Type 8-DFN (5x6) Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the AON6520 is determined by electrical parameter compatibility within the following criteria:

Primary Substitution Parameters:

  • Drain to Source Voltage (Vdss): Must equal or exceed 30V
  • Continuous Drain Current: Must support minimum 11A at Ta or equivalent thermal performance
  • On-Resistance (Rds On): Must not significantly exceed 8.5mOhm to maintain thermal and efficiency characteristics
  • Gate Threshold Voltage: Must fall within ±20V maximum gate-source voltage specification
  • Operating Temperature: Must support -55°C to 150°C range
  • RoHS and Compliance Status: Must maintain ROHS3 compliance and EAR99 classification

Package Compatibility Considerations: Substitute parts may utilize different surface mount packages (8-DFN, 8-HSMT, 8-HSOP, 8-SOP, PQFN) provided the footprint and thermal characteristics are compatible with the application's PCB layout and thermal management design.

Substitutes are grouped into two categories: manufacturer-recommended alternatives from Alpha & Omega Semiconductor (AON7400A) and direct cross-references from alternative manufacturers (Rohm, Infineon, Toshiba) that meet the electrical parameter requirements.

Parameter Comparison

Parameter AON6520 AON7400A RQ3E120BNTB IRFH8334TRPBF RS1E150GNTB TPH8R903NL,LQ TPN11003NL,LQ Unit
Vdss 30 30 30 30 30 30 30 V
Id @ 25°C (Ta) 11 15 12 14 15 A
Id @ Case Temp (Tc) 50 40 44 40 20 11 A
Rds On (Max) @ 10V 8.5 7.5 9.3 9 8.8 8.9 11 mOhm
Vgs(th) (Max) 2.5 2.5 2.5 2.35 2.5 2.3 2.3 V
Qg @ 10V 24 24 29 15 10 9.8 7.5 nC
Ciss @ 15V 1380 1380 1500 1180 590 820 660 pF
Power Dissipation (Ta) 1.9 3.1 2 3.2 3 1.6 0.7 W
Power Dissipation (Tc) 31 25 30 22 24 19 W
Operating Temp Range -55 to 150 -55 to 150 to 150 -55 to 150 to 150 to 150 to 150 °C
Package 8-DFN (5x6) 8-DFN-EP (3x3) 8-HSMT (3.2x3) PQFN (5x6) 8-HSOP 8-SOP Adv (5x5) 8-TSON Adv (3.1x3.1)
Product Status Obsolete Not For New Designs Active Active Active Active Active
RoHS Status ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 RoHS RoHS

Engineering Selection Recommendations

Manufacturer-Recommended Substitute:

AON7400A is the primary manufacturer-recommended alternative from Alpha & Omega Semiconductor Inc. This part maintains the same 30V Vdss rating and improves upon the AON6520 with higher continuous drain current (15A Ta, 40A Tc) and lower on-resistance (7.5mOhm). The AON7400A is classified as "Not For New Designs," indicating it is a transitional option. The package changes from 8-DFN (5x6) to 8-DFN-EP (3x3), requiring PCB layout modification. Both parts maintain ROHS3 compliance and MSL 1 rating.

Active Production Alternatives:

For applications requiring active production status components, the following substitutes are available:

RQ3E120BNTB (Rohm Semiconductor): Maintains 30V Vdss with 12A continuous drain current and 9.3mOhm on-resistance. Packaged in 8-HSMT (3.2x3), this part is actively produced and ROHS3 compliant. On-resistance is within acceptable tolerance of the AON6520.

IRFH8334TRPBF (Infineon Technologies): Delivers 30V Vdss with 14A continuous drain current (Ta) and 44A (Tc), with 9mOhm on-resistance. The PQFN (5x6) package maintains similar footprint dimensions to the original AON6520. This part is actively produced, ROHS3 compliant, and features lower gate charge (15nC) and input capacitance (1180pF), improving switching performance.

RS1E150GNTB (Rohm Semiconductor): Provides 30V Vdss with 15A continuous drain current (Ta) and 40A (Tc), with 8.8mOhm on-resistance. The 8-HSOP package differs from the original, requiring layout verification. This part is actively produced and ROHS3 compliant.

TPH8R903NL,LQ (Toshiba Semiconductor): Rated for 30V Vdss with 20A continuous drain current (Tc) and 8.9mOhm on-resistance. The 8-SOP Advance (5x5) package is similar in footprint to the original. This part is actively produced and RoHS compliant.

TPN11003NL,LQ (Toshiba Semiconductor): Matches the AON6520 with 30V Vdss and 11A continuous drain current (Tc). The 8-TSON Advance (3.1x3.1) package is compact. This part is actively produced and RoHS compliant, offering the closest electrical match to the original device.

All substitute parts maintain ±20V maximum gate-source voltage specification, -55°C to 150°C operating temperature range (or equivalent), and EAR99 export classification.

Frequently Asked Questions (FAQ)

Q: Can I directly replace AON6520 with AON7400A without PCB modifications?

A: No. While both are Alpha & Omega Semiconductor N-Channel 30V MOSFETs, the package changes from 8-DFN (5x6) to 8-DFN-EP (3x3). PCB footprint and thermal via layout must be updated to accommodate the smaller package dimensions.

Q: Which substitute part is most compatible with the original AON6520 design?

A: TPN11003NL,LQ from Toshiba provides the closest electrical match, with identical 30V Vdss and 11A continuous drain current specifications. However, the 8-TSON Advance (3.1x3.1) package differs from the original 8-DFN (5x6), requiring PCB layout verification.

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed substitutes maintain RoHS compliance. AON7400A, RQ3E120BNTB, IRFH8334TRPBF, and RS1E150GNTB are ROHS3 compliant. TPH8R903NL,LQ and TPN11003NL,LQ are RoHS compliant.

Q: What is the difference between Ta and Tc current ratings?

A: Ta (ambient temperature) current is measured at 25°C ambient conditions. Tc (case temperature) current is measured at the device case temperature. Tc ratings are typically higher because the junction temperature is higher at the case. Design thermal management determines which rating applies to your application.

Q: Can I use a substitute with higher continuous drain current than the AON6520?

A: Yes. Higher current ratings indicate improved thermal performance and design margin. Parts such as AON7400A (15A Ta), IRFH8334TRPBF (14A Ta), RS1E150GNTB (15A Ta), and TPH8R903NL,LQ (20A Tc) provide increased current capacity while maintaining 30V Vdss compatibility.

Q: How do package differences affect substitution?

A: Package differences require PCB layout changes, including footprint, thermal vias, and trace routing. Mechanical compatibility with the application's form factor must be verified. Thermal performance may differ due to package construction and thermal resistance characteristics.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects switching speed and gate driver power requirements. Lower gate charge (IRFH8334TRPBF at 15nC, RS1E150GNTB at 10nC) enables faster switching and reduces driver dissipation compared to higher values (AON6520 at 24nC). This impacts overall circuit efficiency and EMI characteristics.

Q: Are all substitutes suitable for new designs?

A: AON7400A is marked "Not For New Designs." For new designs, select from active production parts: RQ3E120BNTB, IRFH8334TRPBF, RS1E150GNTB, TPH8R903NL,LQ, or TPN11003NL,LQ.

Q: What is the Moisture Sensitivity Level (MSL) requirement?

A: All listed parts maintain MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling. Standard PCB assembly processes are compatible without special precautions.

Q: How do on-resistance (Rds On) variations affect circuit performance?

A: On-resistance directly impacts power dissipation and heat generation. Lower Rds On values (AON7400A at 7.5mOhm, RS1E150GNTB at 8.8mOhm) reduce conduction losses compared to higher values (TPN11003NL,LQ at 11mOhm). Selection depends on thermal budget and efficiency requirements.

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