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AON6512 N-Channel MOSFET 30V 54A/150A Equivalent & Substitute Parts
Part Overview
The AON6512 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 54A (Ta) and 150A (Tc). The device is housed in an 8-DFN (5x6) surface mount package and is classified as Not For New Designs. Due to this product status classification, equivalent and substitute parts from active product lines are necessary for ongoing production and new design implementations. The substitute parts listed maintain electrical compatibility within the specified parameter ranges while offering active product status and continued manufacturer support.
Substiute Parts
Key Parameters
| Parameter | AON6512 Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Ta) | 54 | A |
| Continuous Drain Current @ 25°C (Tc) | 150 | A |
| Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 20A, 10V | — |
| Gate Threshold Voltage (Vgs(th)) @ Id | 2 @ 250µA | V |
| Gate Charge (Qg) @ Vgs | 64 @ 10V | nC |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package | 8-DFN (5x6) | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the AON6512 is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Must equal 30V
- FET Type: Must be N-Channel
- Technology: Must be MOSFET (Metal Oxide)
- Operating Temperature Range: Must support -55°C to 150°C (TJ)
- Mounting Type: Must be Surface Mount
- RoHS Status: Must be ROHS3 Compliant or equivalent
- Moisture Sensitivity Level: Must be MSL 1 (Unlimited)
Secondary Compatibility Parameters:
- Continuous Drain Current (Id): Substitute must meet or exceed 54A (Ta) or 150A (Tc) requirements of the application
- On-Resistance (Rds On): Substitute must not exceed the maximum Rds On specification of the application circuit
- Gate Charge (Qg): Lower gate charge values reduce switching losses and are acceptable
- Gate Threshold Voltage (Vgs(th)): Must be within compatible drive voltage ranges (4.5V to 10V)
- Package Footprint: Physical compatibility with 8-DFN (5x6) or equivalent 5x6mm surface mount packages
All substitute parts listed maintain these core parameters and are classified as Active products with current manufacturer support.
Parameter Comparison
| Parameter | AON6512 | AON6312 | CSD17312Q5 | CSD17556Q5BT | PJQ5428_R2_00001 | TPH1R403NL,L1Q | Unit |
|---|---|---|---|---|---|---|---|
| Manufacturer | Alpha & Omega | Alpha & Omega | Texas Instruments | Texas Instruments | Panjit International | Toshiba | — |
| Product Status | Not For New Designs | Active | Active | Active | Active | Active | — |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | — |
| Vdss | 30 | 30 | 30 | 30 | 30 | 30 | V |
| Id (Ta) @ 25°C | 54 | — | 38 | 100 | 20 | 60 | A |
| Id (Tc) @ 25°C | 150 | 85 | 100 | — | 130 | — | A |
| Rds On (Max) @ Id, Vgs | 1.7 @ 20A, 10V | 1.85 @ 20A, 10V | 1.5 @ 35A, 8V | 1.4 @ 40A, 10V | 1.6 @ 20A, 10V | 1.4 @ 30A, 10V | mOhm |
| Vgs(th) @ Id | 2 @ 250µA | 2.2 @ 250µA | 1.5 @ 250µA | 1.65 @ 250µA | 2.5 @ 250µA | 2.3 @ 500µA | V |
| Gate Charge (Qg) @ Vgs | 64 @ 10V | 65 @ 10V | 36 @ 4.5V | 39 @ 4.5V | 60 @ 4.5V | 46 @ 10V | nC |
| Input Capacitance (Ciss) @ Vds | 3430 @ 15V | 3100 @ 15V | 5240 @ 15V | 7020 @ 15V | 6771 @ 25V | 4400 @ 15V | pF |
| Operating Temperature Range | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | to 150 | °C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | — |
| Package | 8-DFN (5x6) | 8-DFN (5x6) | 8-VSON-CLIP (5x6) | 8-VSON-CLIP (5x6) | DFN5060-8 | 8-SOP Advance (5x5) | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | RoHS Compliant | — |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | — |
Engineering Selection Recommendations
AON6312 (Alpha & Omega Semiconductor Inc.)
The AON6312 is the manufacturer-recommended substitute from Alpha & Omega Semiconductor Inc. It maintains the same 30V Vdss rating, identical 8-DFN (5x6) package footprint, and equivalent operating temperature range. The AON6312 is classified as Active product status, ensuring continued availability and manufacturer support. ROHS3 compliance and MSL 1 rating match the original specification. The continuous drain current of 85A (Tc) provides adequate performance for applications requiring the AON6512's 150A (Tc) rating. On-resistance of 1.85 mOhm at 20A, 10V is marginally higher than the AON6512 but remains within acceptable substitution parameters.
CSD17312Q5 (Texas Instruments NexFET™ Series)
The CSD17312Q5 is a Texas Instruments NexFET™ series device with 30V Vdss and Active product status. The 8-VSON-CLIP (5x6) package provides equivalent footprint compatibility with the AON6512. This device features lower on-resistance of 1.5 mOhm at 35A, 8V and reduced gate charge of 36 nC at 4.5V, resulting in improved switching efficiency. The continuous drain current of 38A (Ta) and 100A (Tc) supports applications within the AON6512 performance envelope. ROHS3 compliance and MSL 1 rating are maintained.
CSD17556Q5BT (Texas Instruments NexFET™ Series)
The CSD17556Q5BT is a Texas Instruments NexFET™ series device rated for 30V Vdss with 100A continuous drain current at 25°C (Ta). Active product status ensures ongoing manufacturer support. The 8-VSON-CLIP (5x6) package maintains footprint compatibility. This device exhibits the lowest on-resistance of 1.4 mOhm at 40A, 10V among all substitutes, providing superior thermal performance. Gate charge of 39 nC at 4.5V supports efficient switching operation. ROHS3 compliance and MSL 1 rating are satisfied.
PJQ5428_R2_00001 (Panjit International Inc.)
The PJQ5428_R2_00001 is a Panjit International Inc. device with 30V Vdss and Active product status. The DFN5060-8 package provides a 5x6mm footprint compatible with the AON6512 mounting area. Continuous drain current of 20A (Ta) and 130A (Tc) supports the original specification requirements. On-resistance of 1.6 mOhm at 20A, 10V is comparable to the AON6512. ROHS3 compliance and MSL 1 rating are maintained.
TPH1R403NL,L1Q (Toshiba U-MOSVIII-H Series)
The TPH1R403NL,L1Q is a Toshiba U-MOSVIII-H series device with 30V Vdss and Active product status. The 8-SOP Advance (5x5) package provides a compact surface mount footprint. Continuous drain current of 60A (Ta) exceeds the AON6512 rating, providing performance margin. On-resistance of 1.4 mOhm at 30A, 10V is superior to the original specification. Gate charge of 46 nC at 10V supports efficient switching. RoHS compliance and MSL 1 rating are satisfied. Note: Operating temperature range specification indicates 150°C maximum without lower bound documentation in provided parameters.
Frequently Asked Questions (FAQ)
Q: Can the AON6312 be used as a direct replacement for the AON6512?
A: The AON6312 is the manufacturer-recommended substitute from Alpha & Omega Semiconductor Inc. Both devices share identical 30V Vdss rating, 8-DFN (5x6) package footprint, and -55°C to 150°C operating temperature range. The AON6312 is classified as Active product status, whereas the AON6512 is Not For New Designs. The AON6312 provides 85A continuous drain current (Tc) compared to the AON6512's 150A (Tc), making it suitable for applications within this current envelope. On-resistance specifications are comparable at 1.85 mOhm versus 1.7 mOhm respectively.
Q: What are the package compatibility considerations when substituting with Texas Instruments devices?
A: The CSD17312Q5 and CSD17556Q5BT use 8-VSON-CLIP (5x6) packages, which maintain the same 5x6mm footprint as the AON6512's 8-DFN package. While the package designations differ, both are surface mount devices with equivalent land pattern dimensions. PCB layout compatibility should be verified for specific applications, as VSON and DFN packages may have minor lead configuration differences. Both Texas Instruments devices are classified as Active products with ROHS3 compliance.
Q: How does on-resistance affect substitution suitability?
A: On-resistance (Rds On) directly impacts power dissipation and thermal performance in switching applications. The AON6512 specifies 1.7 mOhm at 20A, 10V. Substitute devices with lower on-resistance values (CSD17556Q5BT at 1.4 mOhm, TPH1R403NL,L1Q at 1.4 mOhm) provide improved efficiency and reduced heat generation. Substitute devices with marginally higher on-resistance (AON6312 at 1.85 mOhm) remain acceptable within typical application tolerances. Selection depends on thermal budget and efficiency requirements of the specific circuit.
Q: Are all substitute parts RoHS compliant?
A: All substitute parts listed are RoHS compliant. The AON6512, AON6312, CSD17312Q5, CSD17556Q5BT, and PJQ5428_R2_00001 are ROHS3 compliant. The TPH1R403NL,L1Q is RoHS compliant. All devices maintain MSL 1 (Unlimited) moisture sensitivity level rating, indicating no special moisture handling requirements during storage or assembly.
Q: What is the significance of Active versus Not For New Designs product status?
A: The AON6512 is classified as Not For New Designs, indicating that Alpha & Omega Semiconductor Inc. is discontinuing this product line and recommends using alternative parts for new circuit designs. All substitute parts listed are classified as Active, meaning manufacturers continue to produce, support, and maintain these devices. For ongoing production and new design implementations, Active status parts ensure continued availability, technical support, and supply chain stability.
Q: Can gate charge differences affect circuit performance?
A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The AON6512 specifies 64 nC at 10V. Substitute devices with lower gate charge values (CSD17312Q5 at 36 nC, CSD17556Q5BT at 39 nC) reduce switching losses and allow faster switching transitions. The PJQ5428_R2_00001 at 60 nC and TPH1R403NL,L1Q at 46 nC provide comparable or improved performance. Lower gate charge is generally advantageous in high-frequency switching applications, reducing driver power requirements and improving overall circuit efficiency.
Q: What continuous drain current rating should be selected for my application?
A: Selection depends on the specific application's current requirements. The AON6512 provides 54A (Ta) and 150A (Tc). Substitute options include: AON6312 at 85A (Tc), CSD17312Q5 at 38A (Ta) and 100A (Tc), CSD17556Q5BT at 100A (Ta), PJQ5428_R2_00001 at 20A (Ta) and 130A (Tc), and TPH1R403NL,L1Q at 60A (Ta). Choose a substitute with continuous drain current rating equal to or exceeding the application's maximum sustained current requirement. Thermal case temperature (Tc) ratings typically exceed ambient temperature (Ta) ratings due to improved heat dissipation at the device junction.
Q: Are there any voltage rating differences between substitute parts?
A: All substitute parts maintain the same 30V drain-to-source voltage (Vdss) rating as the AON6512. This ensures compatibility with circuits designed for 30V maximum operating voltage. Gate threshold voltage (Vgs(th)) specifications vary slightly between manufacturers but remain within acceptable drive voltage ranges of 4.5V to 10V, ensuring compatibility with standard gate driver circuits.
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