AON6413 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AON6413 is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 22A (Ta) and 32A (Tc). The device is housed in an 8-DFN (5x6) surface mount package and is designed for power switching applications requiring moderate current handling and low on-resistance characteristics.

The AON6413 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

AON6413
Alpha & Omega Semiconductor Inc.In Stock: 12144AON6413 Datasheet
AON6413
Current Part
AONS21357
Alpha & Omega Semiconductor Inc.In Stock: 30529AONS21357 Datasheet
AONS21357
Direct
BSC084P03NS3EGATMA1
Infineon TechnologiesIn Stock: 744BSC084P03NS3EGATMA1 Datasheet
BSC084P03NS3EGATMA1
MFR Recommended
BSC084P03NS3GATMA1
Infineon TechnologiesIn Stock: 10023BSC084P03NS3GATMA1 Datasheet
BSC084P03NS3GATMA1
MFR Recommended
DMP3012LPS-13
Diodes IncorporatedIn Stock: 2506DMP3012LPS-13 Datasheet
DMP3012LPS-13
MFR Recommended
RQ3E120ATTB
Rohm SemiconductorIn Stock: 125135RQ3E120ATTB Datasheet
RQ3E120ATTB
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 22 A
Continuous Drain Current @ 25°C (Tc) 32 A
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 16A, 10V
Gate Threshold Voltage Vgs(th) (Max) 2.7 V @ 250µA
Gate Charge (Qg) (Max) 58 nC @ 10V
Power Dissipation (Ta) 6.2 W
Power Dissipation (Tc) 48 W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package 8-DFN (5x6)
RoHS Status ROHS3 Compliant
MSL Rating 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the AON6413 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: P-Channel topology
  • Drain to Source Voltage (Vdss): 30V minimum rating
  • Continuous Drain Current: Minimum 22A (Ta) or equivalent thermal performance
  • On-Resistance (Rds On): Comparable or lower values to maintain circuit efficiency
  • Gate Threshold Voltage (Vgs(th)): Within compatible range for gate drive circuits
  • Operating Temperature Range: -55°C to 150°C (TJ) minimum
  • RoHS3 Compliance and MSL 1 rating required

Secondary Mechanical Criteria:

  • Surface mount technology
  • Package footprint compatibility or functional equivalence
  • Tape & Reel or standard packaging availability

Substitute parts are grouped into two categories based on product status and electrical performance alignment:

Category 1: Direct Manufacturer Equivalent (Active Status) AONS21357 from Alpha & Omega Semiconductor Inc. maintains the same manufacturer lineage, identical Vdss rating, compatible package (8-DFN 5x6), and active product status. This part demonstrates superior on-resistance (7.8 mOhm) and higher Tc current rating (36A).

Category 2: Cross-Manufacturer Alternatives (Active Status) BSC084P03NS3GATMA1 (Infineon), DMP3012LPS-13 (Diodes Incorporated), and RQ3E120ATTB (Rohm Semiconductor) provide functional substitution with identical Vdss and compatible operating temperature ranges. These parts feature different package geometries and current ratings that require application-level verification.

Parameter Comparison

Parameter AON6413 AONS21357 BSC084P03NS3GATMA1 DMP3012LPS-13 RQ3E120ATTB
Manufacturer Alpha & Omega Alpha & Omega Infineon Diodes Inc. Rohm
Product Status Obsolete Active Active Active Active
Vdss (V) 30 30 30 30 30
Id @ 25°C Ta (A) 22 21 14.9 13.2 12
Id @ 25°C Tc (A) 32 36 78.6
Rds On (Max) (mOhm) 8.5 @ 16A, 10V 7.8 @ 20A, 10V 8.4 @ 50A, 10V 9 @ 10A, 10V 8 @ 12A, 10V
Vgs(th) (Max) (V) 2.7 @ 250µA 2.3 @ 250µA 3.1 @ 105µA 2.1 @ 250µA 2.5 @ 1mA
Gate Charge Qg (nC) 58 @ 10V 70 @ 10V 58 @ 10V 139 @ 10V 62 @ 10V
Ciss (Max) (pF) 2142 @ 15V 2830 @ 15V 4785 @ 15V 6807 @ 15V 3200 @ 15V
Power Dissipation Ta (W) 6.2 5 2.5 1.29 2
Power Dissipation Tc (W) 48 48 69
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 to 150
Package 8-DFN (5x6) 8-DFN (5x6) PG-TDSON-8-5 PowerDI5060-8 8-HSMT (3.2x3)
RoHS Status ROHS3 ROHS3 ROHS3 ROHS3 ROHS3
MSL Rating 1 1 1 1 1

Engineering Selection Recommendations

AONS21357 (Alpha & Omega Semiconductor Inc.)

The AONS21357 is the primary recommended substitute for the AON6413. Both devices share identical manufacturer lineage, Vdss rating (30V), and package geometry (8-DFN 5x6). The AONS21357 maintains active product status with superior electrical performance: lower on-resistance (7.8 mOhm vs. 8.5 mOhm), higher Tc current rating (36A vs. 32A), and equivalent gate charge (70 nC vs. 58 nC). Full RoHS3 compliance and MSL 1 rating are maintained. This part provides direct functional replacement with enhanced thermal performance characteristics.

BSC084P03NS3GATMA1 (Infineon Technologies)

The BSC084P03NS3GATMA1 is an active cross-manufacturer alternative with identical Vdss (30V) and operating temperature range. The device features a different package geometry (PG-TDSON-8-5 vs. 8-DFN 5x6), which requires PCB layout verification. The Tc current rating (78.6A) significantly exceeds the AON6413 requirement, providing enhanced thermal headroom. On-resistance (8.4 mOhm) is comparable. Gate charge (58 nC) matches the original specification. RoHS3 compliance and MSL 1 rating are confirmed. Selection requires package footprint compatibility assessment.

DMP3012LPS-13 (Diodes Incorporated)

The DMP3012LPS-13 is an active alternative with identical Vdss (30V) and compatible operating temperature range. The device features lower continuous drain current (13.2A Ta) compared to the AON6413 (22A Ta), limiting its application scope to lower-current designs. On-resistance (9 mOhm) is slightly higher. Gate charge (139 nC) is significantly elevated, requiring higher gate drive capability. Package geometry (PowerDI5060-8) differs from the original. Selection is appropriate only for applications with reduced current requirements.

RQ3E120ATTB (Rohm Semiconductor)

The RQ3E120ATTB is an active alternative with identical Vdss (30V) and compatible operating temperature range. The device features the lowest continuous drain current (12A Ta) among all substitutes, restricting application to minimal-current designs. On-resistance (8 mOhm) is favorable. Gate charge (62 nC) is comparable. Package geometry (8-HSMT 3.2x3) differs significantly from the original, requiring PCB redesign. Selection is appropriate only for space-constrained, low-current applications.

Frequently Asked Questions (FAQ)

Q: Can the AONS21357 be used as a direct replacement for the AON6413 without PCB modifications?

A: Yes. The AONS21357 shares identical package geometry (8-DFN 5x6) and pinout with the AON6413. No PCB layout modifications are required. The part is a direct footprint replacement with improved electrical performance.

Q: What is the primary limitation when substituting the BSC084P03NS3GATMA1 for the AON6413?

A: The BSC084P03NS3GATMA1 uses a different package geometry (PG-TDSON-8-5 vs. 8-DFN 5x6). PCB layout and footprint verification is required before implementation. Electrical parameters are compatible.

Q: Is the DMP3012LPS-13 suitable for all applications currently using the AON6413?

A: No. The DMP3012LPS-13 has a lower continuous drain current rating (13.2A Ta vs. 22A Ta). It is suitable only for applications with reduced current requirements. Gate charge is also significantly higher (139 nC vs. 58 nC), requiring verification of gate drive circuit capability.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Identical FET type (P-Channel), (2) Vdss rating of 30V or higher, (3) Continuous drain current meeting or exceeding application requirements, (4) On-resistance comparable or lower than the original, (5) Gate threshold voltage within compatible range for existing gate drive circuits, (6) Operating temperature range of -55°C to 150°C (TJ), and (7) RoHS3 compliance with MSL 1 rating.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (AONS21357, BSC084P03NS3GATMA1, DMP3012LPS-13, and RQ3E120ATTB) are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original AON6413 specification.

Q: Which substitute part offers the best thermal performance?

A: The BSC084P03NS3GATMA1 offers the highest Tc current rating (78.6A) and highest Tc power dissipation (69W), providing superior thermal performance. However, package geometry differs from the original, requiring PCB verification.

Q: Can gate drive circuits designed for the AON6413 be used with all substitute parts without modification?

A: Gate threshold voltage and gate charge vary across substitutes. The AONS21357 and RQ3E120ATTB have comparable gate charge (70 nC and 62 nC respectively). The DMP3012LPS-13 has significantly higher gate charge (139 nC), potentially requiring gate drive circuit adjustment. The BSC084P03NS3GATMA1 has comparable gate charge (58 nC) but higher input capacitance (4785 pF vs. 2142 pF), which may affect switching speed.

Q: What is the inventory status of each substitute part?

A: AONS21357 has 30,448 pieces in stock. BSC084P03NS3GATMA1 has 9,927 pieces in stock. DMP3012LPS-13 has 2,400 pieces in stock. RQ3E120ATTB has 125,100 pieces in stock. All parts are available as new original components.

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