AON6410 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AON6410 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with 10A continuous drain current (Ta) and 24A (Tc). The device is housed in an 8-DFN (5x6) surface mount package and is designed for general-purpose switching applications requiring moderate current handling and low on-resistance characteristics.

The AON6410 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	10	A
Continuous Drain Current @ 25°C (Tc)	24	A
On-Resistance (Rds On) @ 20A, 10V	12	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	28	nC
Input Capacitance (Ciss) @ 15V	1452	pF
Power Dissipation (Ta)	2	W
Power Dissipation (Tc)	35	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-DFN (5x6)	Surface Mount
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution of the AON6410 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥ 30V
Continuous Drain Current (Id): Must meet or exceed 10A (Ta) and 24A (Tc) ratings
On-Resistance (Rds On): Lower or equivalent values ensure compatible thermal and switching performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuitry
Package Type: Surface mount 8-pin configurations with compatible pinout and thermal characteristics
Operating Temperature Range: Must support -55°C to 150°C junction temperature
FET Technology: N-Channel MOSFET (Metal Oxide Semiconductor)

Secondary Compatibility Factors:

Gate Charge (Qg): Lower values reduce switching losses and gate drive requirements
Input Capacitance (Ciss): Affects gate drive circuit design and switching speed
Maximum Gate Voltage (Vgs): Must accommodate existing gate drive voltage levels
Product Status: Active parts are preferred for new designs; obsolete or not-for-new-designs parts require lifecycle assessment

Substitute parts listed below satisfy the primary criteria while maintaining electrical compatibility with the AON6410 application envelope.

Parameter Comparison

Parameter	AON6410	AON6414A	BSC018N04LSGATMA1	BSC019N04NSGATMA1	BSC100N03MSGATMA1	BSC120N03MSGATMA1	CSD17327Q5A	RS1E130GNTB
Vdss (V)	30	30	40	40	30	30	30	30
Id @ 25°C Ta (A)	10	13	30	30	12	11	—	13
Id @ 25°C Tc (A)	24	30	100	100	44	39	65	—
Rds On @ 10V (mOhm)	12	8	1.8	1.9	10	12	12.2	11.7
Vgs(th) @ Id (V)	2.5 @ 250µA	2.5 @ 250µA	2 @ 85µA	4 @ 85µA	2 @ 250µA	2 @ 250µA	2 @ 250µA	2.5 @ 1mA
Qg @ 10V (nC)	28	24	150	108	23	20	3.4	7.9
Ciss @ 15V (pF)	1452	1380	12000	8800	1700	1500	506	420
Vgs Max (V)	±12	±20	±20	±20	±20	±20	±10	±20
Power Dissipation Ta (W)	2	2.3	2.5	2.5	2.5	2.5	3	3
Power Dissipation Tc (W)	35	31	125	125	30	28	—	22.2
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	8-DFN (5x6)	8-DFN (5x6)	PG-TDSON-8-1	PG-TDSON-8-1	PG-TDSON-8-5	PG-TDSON-8-5	8-VSONP (5x6)	8-HSOP
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Tier 1 Direct Replacement (Highest Compatibility):

The AON6414A is the primary recommended substitute for the AON6410. Both devices share identical Vdss (30V), matching package geometry (8-DFN 5x6), and compatible gate threshold voltage specifications. The AON6414A provides improved performance with 13A (Ta) and 30A (Tc) continuous drain current ratings, exceeding the AON6410 specifications. On-resistance is reduced to 8mOhm at 20A/10V, improving efficiency. The AON6414A carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment. Gate charge is reduced to 24nC, lowering gate drive power requirements.

Tier 2 Voltage-Rated Alternatives (40V Vdss):

BSC018N04LSGATMA1 and BSC019N04NSGATMA1 (Infineon OptiMOS™ series) provide 40V Vdss rating, offering additional voltage margin for applications with transient overvoltage conditions. Both devices deliver 30A (Ta) and 100A (Tc) continuous drain current, substantially exceeding AON6410 ratings. Package type differs (PG-TDSON-8-1 versus 8-DFN), requiring PCB layout verification. On-resistance values are significantly lower (1.8–1.9mOhm), reducing conduction losses. Gate charge is elevated (108–150nC), requiring higher gate drive capability. Both parts carry Active status and ROHS3 compliance.

Tier 3 30V Alternatives (Infineon OptiMOS™):

BSC120N03MSGATMA1 provides 30V Vdss with 11A (Ta) and 39A (Tc) ratings, closely matching AON6410 current specifications. Package type is PG-TDSON-8-5, requiring PCB layout assessment. On-resistance is 12mOhm at 30A/10V, equivalent to the AON6410. Gate charge is reduced to 20nC. Product status is Active with ROHS3 compliance. This part is suitable for direct substitution in existing designs with compatible PCB footprints.

BSC100N03MSGATMA1 carries Not-For-New-Designs status and is not recommended for new product development, though it may be used for legacy system maintenance.

Tier 4 High-Performance Alternatives:

CSD17327Q5A (Texas Instruments NexFET™) offers 30V Vdss with 65A (Tc) continuous drain current in an 8-VSONP (5x6) package compatible with AON6410 footprint. On-resistance is 12.2mOhm at 11A/8V. Gate charge is significantly reduced to 3.4nC at 4.5V, enabling fast switching with minimal gate drive power. Maximum gate voltage is ±10V, requiring verification against existing gate drive circuits. Product status is Active with ROHS3 compliance.

RS1E130GNTB (Rohm Semiconductor) provides 30V Vdss with 13A (Ta) continuous drain current in an 8-HSOP package. On-resistance is 11.7mOhm at 13A/10V. Gate charge is 7.9nC. Package type differs from AON6410, requiring PCB redesign. Product status is Active with ROHS3 compliance.

Compliance and Availability:

All recommended substitutes carry ROHS3 compliance and REACH Unaffected status, matching the regulatory profile of the AON6410. Active product status ensures continued manufacturing and supply chain availability. Inventory levels for recommended substitutes range from 1,900 to 34,383 units, supporting immediate procurement requirements.

Frequently Asked Questions (FAQ)

Q: Can the AON6414A directly replace the AON6410 without PCB modifications?

A: Yes. The AON6414A shares identical package geometry (8-DFN 5x6), pinout, and electrical operating parameters with the AON6410. No PCB layout changes are required. The AON6414A provides improved current ratings and reduced on-resistance, making it a direct upgrade.

Q: What is the primary reason for substituting the AON6410?

A: The AON6410 carries Obsolete product status, indicating discontinued manufacturing and declining supply availability. Substitution ensures long-term design support and production continuity. The AON6414A is the recommended replacement, offering superior electrical performance while maintaining package and pinout compatibility.

Q: Are the Infineon OptiMOS™ parts (BSC018N04LSGATMA1, BSC019N04NSGATMA1) suitable for direct PCB replacement?

A: No. These parts use PG-TDSON-8-1 package geometry, which differs from the AON6410 8-DFN (5x6) package. PCB footprint redesign is required. However, both devices provide superior current handling (30A Ta, 100A Tc) and lower on-resistance (1.8–1.9mOhm), making them suitable for performance-optimized redesigns. Verify pinout compatibility before layout implementation.

Q: What is the significance of the 40V Vdss rating on BSC018N04LSGATMA1 and BSC019N04NSGATMA1?

A: The 40V Vdss rating provides additional voltage margin above the AON6410 30V specification. This allows operation in applications with transient overvoltage conditions or higher supply voltage tolerance. The higher voltage rating does not affect compatibility with 30V nominal systems but requires verification of gate drive voltage levels and thermal management.

Q: How does gate charge (Qg) affect substitution decisions?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (CSD17327Q5A at 3.4nC) reduces gate drive power consumption and enables faster switching. Higher gate charge (BSC018N04LSGATMA1 at 150nC) requires more robust gate drive circuitry. Verify that existing gate drive circuits can supply the required charge for substitute parts, particularly for high-frequency switching applications.

Q: Can the CSD17327Q5A replace the AON6410 in existing designs?

A: The CSD17327Q5A shares the 8-VSONP (5x6) package footprint with the AON6410, enabling direct PCB replacement. However, the maximum gate voltage is ±10V, compared to the AON6410 ±12V specification. Verify that gate drive circuits operate within ±10V limits. The CSD17327Q5A provides superior performance with 65A (Tc) current rating and 3.4nC gate charge, making it suitable for high-performance applications.

Q: What package considerations apply to RS1E130GNTB substitution?

A: The RS1E130GNTB uses an 8-HSOP package, which differs from the AON6410 8-DFN (5x6) package. PCB layout redesign is required. The 8-HSOP package may have different thermal characteristics and lead spacing. Verify thermal management requirements and PCB routing compatibility before implementation. This part is suitable for redesigned applications requiring the Rohm device characteristics.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts carry ROHS3 compliance certification, matching the regulatory requirements of the AON6410. All parts also carry REACH Unaffected status, ensuring compliance with chemical substance regulations.

Q: What is the difference between Ta and Tc current ratings?

A: Ta (ambient temperature) represents continuous drain current at 25°C ambient temperature with natural convection cooling. Tc (case temperature) represents continuous drain current with active thermal management or forced-air cooling. Tc ratings are significantly higher due to improved heat dissipation. Select substitutes based on application thermal conditions and required current capacity.

Q: Should BSC100N03MSGATMA1 be used for new designs?

A: No. BSC100N03MSGATMA1 carries Not-For-New-Designs product status, indicating that Infineon recommends alternative parts for new product development. This part may be used for legacy system maintenance or repair of existing designs. For new designs, select from Active status alternatives such as BSC120N03MSGATMA1, AON6414A, or CSD17327Q5A.

Q: How do input capacitance (Ciss) differences affect circuit performance?

A: Input capacitance affects gate drive circuit impedance and switching speed. Lower Ciss values (CSD17327Q5A at 506pF) enable faster switching and reduce gate drive power requirements. Higher Ciss values (BSC018N04LSGATMA1 at 12000pF) increase gate drive complexity and switching losses. For high-frequency applications, select parts with lower Ciss values. For low-frequency applications, Ciss differences have minimal impact.

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