AON6362 N-Channel MOSFET 30V 27A/60A Equivalent & Substitute Parts

Part Overview

The AON6362 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 27A at Ta and 60A at Tc. The device is housed in an 8-DFN (5x6) surface mount package and is designed for general-purpose switching applications. The AON6362 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors while meeting RoHS and REACH compliance requirements.

Substiute Parts

AON6362
Alpha & Omega Semiconductor Inc.In Stock: 1568AON6362 Datasheet
AON6362
Current Part
AONS36306
Alpha & Omega Semiconductor Inc.In Stock: 8019AONS36306 Datasheet
AONS36306
Direct
AONS36346
Alpha & Omega Semiconductor Inc.In Stock: 1046AONS36346 Datasheet
AONS36346
Direct
DMN3008SFGQ-13
Diodes IncorporatedIn Stock: 9781DMN3008SFGQ-13 Datasheet
DMN3008SFGQ-13
MFR Recommended
RQ3E180BNTB
Rohm SemiconductorIn Stock: 6248RQ3E180BNTB Datasheet
RQ3E180BNTB
MFR Recommended
TPH3R003PL,LQ
Toshiba Semiconductor and StorageIn Stock: 3998TPH3R003PL,LQ Datasheet
TPH3R003PL,LQ
MFR Recommended
TPN4R303NL,L1Q
Toshiba Semiconductor and StorageIn Stock: 6843TPN4R303NL,L1Q Datasheet
TPN4R303NL,L1Q
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 27 A
Continuous Drain Current @ 25°C (Tc) 60 A
RDS(on) Max @ 20A, 10V 5.2 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.2 V
Gate Charge (Qg) @ 10V 13 nC
Input Capacitance (Ciss) @ 15V 820 pF
Power Dissipation (Ta) 6.2 W
Power Dissipation (Tc) 31 W
Operating Temperature Range -55 to 150 °C
Package Type 8-DFN (5x6) Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the AON6362 is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
  • Continuous Drain Current: Must support minimum 27A at Ta and 60A at Tc
  • RDS(on) characteristics: Must not exceed 5.2mOhm @ 20A, 10V to maintain thermal performance
  • Gate Threshold Voltage: Must fall within ±20V maximum gate voltage specification
  • Operating Temperature Range: Must support -55°C to 150°C minimum
  • Package Compatibility: Surface mount packages with equivalent thermal and electrical performance
  • Compliance: RoHS3 and REACH compliance required

Substitute parts are grouped into two categories:

  1. Direct Alpha & Omega Semiconductor Equivalents (AONS36306, AONS36346): Active product status with identical or superior electrical ratings, same package family, and maintained manufacturing support.

  2. Cross-Manufacturer Alternatives (DMN3008SFGQ-13, RQ3E180BNTB, TPH3R003PL,LQ, TPN4R303NL,L1Q): Alternative manufacturers offering equivalent or superior performance with different package geometries. These parts maintain 30V Vdss rating and support required current levels with active product status and automotive-grade certifications where applicable.

Parameter Comparison

Parameter AON6362 AONS36306 AONS36346 DMN3008SFGQ-13 RQ3E180BNTB TPH3R003PL,LQ TPN4R303NL,L1Q
Vdss (V) 30 30 30 30 30 30 30
Id @ Ta (A) 27 28 26.5 17.6
Id @ Tc (A) 60 63 60 62 39 88 40
RDS(on) Max @ 10V (mOhm) 5.2 5.2 5.5 4.4 3.9 4.2 4.3
Vgs(th) @ 250µA (V) 2.2 2.2 2.1 2.3 2.5 2.1 2.3
Qg @ 10V (nC) 13 30 20 86 37 50 14.8
Ciss @ 15V (pF) 820 1000 800 3690 3500 3825 1400
Power Dissipation Ta (W) 6.2 6.2 6.2 0.9 2 0.7
Power Dissipation Tc (W) 31 31 31 20 90 34
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package Type 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6) PowerDI3333-8 8-HSMT (3.2x3) 8-SOP Advance (5x5) 8-TSON Advance (3.1x3.1)
Product Status Obsolete Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant RoHS Compliant RoHS Compliant

Engineering Selection Recommendations

Tier 1 Substitutes (Recommended for Direct Replacement):

AONS36306 and AONS36346 are the primary substitutes for the AON6362. Both parts are manufactured by Alpha & Omega Semiconductor Inc., maintain active product status, and are ROHS3 compliant. AONS36306 offers superior continuous drain current (28A at Ta, 63A at Tc) with identical RDS(on) characteristics and power dissipation ratings. AONS36346 provides equivalent performance with 26.5A at Ta and 60A at Tc, matching the original part's Tc rating. Both parts are packaged in the same 8-DFN (5x6) form factor, enabling direct PCB layout compatibility. AONS36306 and AONS36346 maintain identical gate threshold voltage and maximum gate voltage specifications, ensuring gate drive circuit compatibility.

Tier 2 Substitutes (Cross-Manufacturer Alternatives):

TPN4R303NL,L1Q (Toshiba) provides the closest electrical match among cross-manufacturer options, with 40A continuous drain current at Tc, 4.3mOhm RDS(on), and gate charge of 14.8nC at 10V—the lowest among all substitutes. This part maintains RoHS compliance and active product status. The 8-TSON Advance (3.1x3.1) package is smaller than the original 8-DFN (5x6), requiring PCB layout redesign but offering improved thermal performance in compact applications.

DMN3008SFGQ-13 (Diodes Incorporated) is an automotive-grade part with AEC-Q101 qualification, suitable for applications requiring automotive reliability. It features superior RDS(on) of 4.4mOhm and 62A continuous drain current at Tc. The PowerDI3333-8 package differs from the original, necessitating layout modification. Higher gate charge (86nC) and input capacitance (3690pF) may impact gate drive requirements.

RQ3E180BNTB (Rohm Semiconductor) offers the lowest RDS(on) at 3.9mOhm and supports 39A continuous drain current at Tc. The 8-HSMT (3.2x3) package is significantly smaller than the original, requiring PCB redesign. This part is suitable for applications prioritizing low on-resistance and compact form factor.

TPH3R003PL,LQ (Toshiba) supports the highest continuous drain current at 88A (Tc) with 4.2mOhm RDS(on), making it suitable for high-current applications. The 8-SOP Advance (5x5) package requires layout modification. Gate charge of 50nC is higher than the original, affecting switching speed characteristics.

Selection Criteria by Application:

  • Direct PCB Compatibility: Select AONS36306 or AONS36346 to maintain identical 8-DFN (5x6) package footprint.
  • Automotive Applications: Select DMN3008SFGQ-13 for AEC-Q101 qualification and automotive-grade reliability.
  • High-Current Requirements: Select TPH3R003PL,LQ for maximum continuous drain current (88A at Tc).
  • Compact Form Factor: Select RQ3E180BNTB or TPN4R303NL,L1Q for reduced package size with maintained electrical performance.
  • Lowest On-Resistance: Select RQ3E180BNTB (3.9mOhm) or TPH3R003PL,LQ (4.2mOhm) for applications sensitive to conduction losses.

All substitute parts maintain 30V Vdss rating, RoHS compliance, and operating temperature range compatibility with the original AON6362.

Frequently Asked Questions (FAQ)

Q: Can AONS36306 or AONS36346 be used as direct drop-in replacements for AON6362?

A: Yes. Both AONS36306 and AONS36346 are packaged in the same 8-DFN (5x6) surface mount form factor as the AON6362, enabling direct PCB footprint compatibility without layout modification. Both parts maintain identical gate voltage specifications (±20V maximum) and operating temperature range (-55°C to 150°C), ensuring gate drive circuit and thermal management compatibility.

Q: What are the key differences between AONS36306 and AONS36346?

A: AONS36306 provides higher continuous drain current (28A at Ta, 63A at Tc) compared to AONS36346 (26.5A at Ta, 60A at Tc). AONS36306 has higher gate charge (30nC versus 20nC) and input capacitance (1000pF versus 800pF), resulting in slightly slower switching characteristics. AONS36346 has marginally higher RDS(on) (5.5mOhm versus 5.2mOhm). Both parts are ROHS3 compliant with active product status.

Q: Why do cross-manufacturer substitutes have different package types?

A: Cross-manufacturer alternatives employ different package geometries optimized for their respective manufacturing processes and thermal management strategies. DMN3008SFGQ-13 uses PowerDI3333-8, RQ3E180BNTB uses 8-HSMT, TPH3R003PL,LQ uses 8-SOP Advance, and TPN4R303NL,L1Q uses 8-TSON Advance. These packages offer varying thermal performance, current distribution, and board space requirements. Package selection depends on application-specific thermal and spatial constraints.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed are RoHS compliant. AONS36306, AONS36346, and DMN3008SFGQ-13 are ROHS3 compliant. TPH3R003PL,LQ and TPN4R303NL,L1Q are RoHS compliant. All parts meet REACH requirements and carry EAR99 ECCN classification.

Q: Which substitute part has the lowest on-resistance?

A: RQ3E180BNTB has the lowest RDS(on) at 3.9mOhm @ 18A, 10V. This is followed by TPH3R003PL,LQ at 4.2mOhm @ 44A, 4.5V and DMN3008SFGQ-13 at 4.4mOhm @ 13.5A, 10V. Lower on-resistance reduces conduction losses and heat generation, beneficial for high-current or efficiency-critical applications.

Q: What is the impact of higher gate charge on circuit design?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on or off. Higher gate charge requires more current from the gate driver and extends switching time. AONS36306 (30nC) and AONS36346 (20nC) have higher gate charge than AON6362 (13nC). Cross-manufacturer substitutes range from 14.8nC (TPN4R303NL,L1Q) to 86nC (DMN3008SFGQ-13). Gate drivers must supply sufficient current to achieve desired switching frequency without exceeding maximum gate voltage (±20V).

Q: Is DMN3008SFGQ-13 suitable for automotive applications?

A: Yes. DMN3008SFGQ-13 is automotive-grade with AEC-Q101 qualification, making it suitable for automotive and industrial applications requiring enhanced reliability and temperature cycling performance. The part maintains -55°C to 150°C operating temperature range and ROHS3 compliance.

Q: Can TPH3R003PL,LQ handle higher current than the original AON6362?

A: Yes. TPH3R003PL,LQ supports 88A continuous drain current at Tc, significantly higher than AON6362's 60A at Tc. This part is suitable for applications requiring higher current capacity. However, the 8-SOP Advance (5x5) package differs from the original 8-DFN (5x6), requiring PCB layout redesign. Gate charge is 50nC, higher than the original 13nC, affecting switching characteristics.

Q: What is the moisture sensitivity level for all substitute parts?

A: All substitute parts have Moisture Sensitivity Level (MSL) of 1 (Unlimited), matching the original AON6362. This indicates the parts can be stored and handled without moisture-related degradation concerns under standard industrial conditions.

Q: Which substitute offers the best balance of performance and package compatibility?

A: AONS36306 and AONS36346 offer the best balance, maintaining identical 8-DFN (5x6) package footprint while providing active product status and ROHS3 compliance. AONS36306 provides superior current ratings (28A at Ta, 63A at Tc) with no layout modification required. For applications requiring package redesign, TPN4R303NL,L1Q offers competitive electrical performance with lower gate charge (14.8nC) and compact 8-TSON Advance (3.1x3.1) form factor.

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