AON6270 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AON6270 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 75V drain-to-source voltage with continuous drain current of 31.5A at Ta and 85A at Tc. The device is housed in an 8-DFN (5x6) surface mount package and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current @ 25°C (Ta)	31.5	A
Continuous Drain Current @ 25°C (Tc)	85	A
Rds On (Max) @ 20A, 10V	3.9	mOhm
Gate Charge (Qg) @ 10V	85	nC
Vgs(th) @ 250µA	3.2	V
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-DFN (5x6)	—

Substitute Part Grouping Explanation

Substitution of the AON6270 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

FET Type: N-Channel topology must be maintained
Drain to Source Voltage (Vdss): Substitute must equal or exceed 75V
Continuous Drain Current: Substitute must support equivalent current ratings at both Ta and Tc conditions
Rds On (Max): Substitute must not exceed the on-resistance specification to maintain circuit performance
Gate Charge (Qg): Lower gate charge values indicate improved switching efficiency
Vgs(th): Threshold voltage must remain within compatible operating ranges
Operating Temperature Range: Substitute must support the full -55°C to 150°C range

Mechanical Compatibility Criteria:

Mounting Type: Surface mount configuration required
Package Type: 8-pin configurations with compatible pinout and thermal characteristics

The substitute parts listed below meet these criteria with variations in voltage rating, current handling, and package form factor that allow functional equivalence in circuit applications.

Parameter Comparison

Parameter	AON6270	AON6280	BSC042NE7NS3GATMA1	TPH2R506PL,L1Q	TPH4R606NH,L1Q
Manufacturer	Alpha & Omega	Alpha & Omega	Infineon	Toshiba	Toshiba
Product Status	Obsolete	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	75	80	75	60	60
Id @ Ta (A)	31.5	17	19	—	32
Id @ Tc (A)	85	85	100	100	—
Rds On (Max) (mOhm)	3.9 @ 20A, 10V	4.1 @ 20A, 10V	4.2 @ 50A, 10V	4.4 @ 30A, 4.5V	4.6 @ 16A, 10V
Gate Charge Qg (nC)	85 @ 10V	82 @ 10V	69 @ 10V	60 @ 10V	49 @ 10V
Vgs(th) (V)	3.2 @ 250µA	3.2 @ 250µA	3.8 @ 91µA	2.5 @ 500µA	4.0 @ 500µA
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	—	—
Package	8-DFN (5x6)	8-DFN (5x6)	PG-TDSON-8-1	8-SOP Advance (5x5)	8-SOP Advance (5x5)
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	RoHS Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

AON6280 (Alpha & Omega Semiconductor Inc.)

The AON6280 is the primary recommended substitute for the obsolete AON6270. Both devices share the same manufacturer, identical package form factor (8-DFN 5x6), and matching operating temperature range (-55°C to 150°C). The AON6280 features a higher Vdss rating of 80V compared to the AON6270's 75V, providing enhanced voltage margin. Continuous drain current at Tc is equivalent at 85A. The AON6280 is active in production with ROHS3 compliance and unlimited moisture sensitivity rating. Gate charge is marginally lower (82 nC vs. 85 nC), indicating improved switching characteristics. This part is suitable for direct replacement in existing designs.

BSC042NE7NS3GATMA1 (Infineon Technologies)

The BSC042NE7NS3GATMA1 is an active Infineon OptiMOS™ series device with matching 75V Vdss rating and superior continuous drain current at Tc of 100A. The package differs (PG-TDSON-8-1 vs. 8-DFN), requiring PCB layout modification. Gate charge is significantly lower at 69 nC, providing improved switching efficiency. This device is ROHS3 compliant and suitable for applications requiring higher current handling at case temperature. Pinout compatibility must be verified before implementation.

TPH2R506PL,L1Q (Toshiba Semiconductor and Storage)

The TPH2R506PL,L1Q is a Toshiba U-MOSIX-H series device with reduced Vdss rating of 60V, limiting its use to applications with lower voltage requirements. Continuous drain current at Tc reaches 100A, exceeding the AON6270 specification. The package is 8-SOP Advance (5x5), differing from the original 8-DFN form factor. Gate charge is 60 nC, the lowest among substitutes. This device is RoHS compliant and suitable for lower-voltage circuit implementations.

TPH4R606NH,L1Q (Toshiba Semiconductor and Storage)

The TPH4R606NH,L1Q is a Toshiba U-MOSVIII-H series device with 60V Vdss rating and 32A continuous drain current at Ta, closely matching the AON6270's Ta specification. The package is 8-SOP Advance (5x5). Gate charge is 49 nC, the lowest among all listed substitutes. This device is RoHS compliant and suitable for applications where voltage derating to 60V is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the AON6280 be used as a direct replacement for the AON6270?

A: Yes. The AON6280 shares identical package geometry (8-DFN 5x6), pinout, operating temperature range, and equivalent current ratings at Tc. The higher Vdss rating (80V vs. 75V) provides additional voltage margin. No circuit modifications are required.

Q: What is the primary difference between the AON6280 and the Infineon BSC042NE7NS3GATMA1?

A: The AON6280 maintains the original 8-DFN package, while the BSC042NE7NS3GATMA1 uses a PG-TDSON-8-1 package. Both support 75V Vdss and deliver 85A at Tc. The Infineon device offers lower gate charge (69 nC) and higher current at Tc (100A). PCB layout changes are required for the Infineon substitute.

Q: Are the Toshiba devices (TPH2R506PL,L1Q and TPH4R606NH,L1Q) suitable for 75V applications?

A: No. Both Toshiba devices are rated for 60V Vdss maximum. They are suitable only for applications with voltage requirements of 60V or lower. Using these devices in 75V circuits will result in device failure.

Q: What does MSL 1 (Unlimited) moisture sensitivity rating mean?

A: MSL 1 indicates the lowest moisture sensitivity level. These devices can be stored indefinitely without moisture bake-out procedures prior to soldering, simplifying inventory management and manufacturing logistics.

Q: How do gate charge differences affect circuit performance?

A: Lower gate charge (Qg) reduces the charge required to switch the device on and off, resulting in faster switching transitions, reduced switching losses, and improved efficiency. The AON6280 (82 nC) and BSC042NE7NS3GATMA1 (69 nC) offer improved switching performance compared to the AON6270 (85 nC).

Q: Is pinout compatibility guaranteed across all substitute parts?

A: No. While all devices are 8-pin surface mount MOSFETs, package form factors differ. The AON6280 maintains identical pinout to the AON6270 (both 8-DFN). The Infineon and Toshiba devices use different packages and require pinout verification before implementation.

Q: What compliance certifications are relevant for these devices?

A: All active substitute parts carry RoHS compliance certifications (ROHS3 for Alpha & Omega and Infineon; RoHS for Toshiba). All devices are REACH unaffected and classified under ECCN EAR99. MSL ratings are uniformly 1 (Unlimited) across all parts.

Q: Can I use the TPH4R606NH,L1Q if my circuit operates at 75V?

A: No. The TPH4R606NH,L1Q is rated for maximum 60V Vdss. Operating this device at 75V exceeds its voltage specification and will cause immediate failure. Use only devices with Vdss ratings equal to or greater than your circuit voltage.

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