AON6224 N-Channel MOSFET 100V 34A Equivalent & Substitute Parts

Part Overview

The AON6224 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with 34A continuous drain current at case temperature (Tc). The device is housed in an 8-DFN (5x6) surface mount package and dissipates up to 56.5W at Tc. This part is classified as "Not For New Designs," indicating it has been superseded or is in end-of-life status. Identifying equivalent and substitute parts is necessary for ongoing production support, maintenance applications, and design continuity where the AON6224 specification requirements must be maintained or exceeded.

Substiute Parts

AON6224
Alpha & Omega Semiconductor Inc.In Stock: 5561AON6224 Datasheet
AON6224
Current Part
AONS66923
Alpha & Omega Semiconductor Inc.In Stock: 900138AONS66923 Datasheet
AONS66923
MFR Recommended
DMT10H015LCG-7
Diodes IncorporatedIn Stock: 4784DMT10H015LCG-7 Datasheet
DMT10H015LCG-7
MFR Recommended
TPN13008NH,L1Q
Toshiba Semiconductor and StorageIn Stock: 11488TPN13008NH,L1Q Datasheet
TPN13008NH,L1Q
MFR Recommended
TPN1600ANH,L1Q
Toshiba Semiconductor and StorageIn Stock: 2382TPN1600ANH,L1Q Datasheet
TPN1600ANH,L1Q
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current @ 25°C (Id) 34 A (Tc)
On-Resistance (Rds On) @ 20A, 10V 12 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.4 V (Max)
Gate Charge (Qg) @ 10V 50 nC (Max)
Input Capacitance (Ciss) @ 50V 2420 pF (Max)
Power Dissipation (Max) 56.5 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type 8-DFN (5x6) Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the AON6224 is determined by strict electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss) must equal or exceed 100V
  • Continuous Drain Current (Id) at case temperature must equal or exceed 34A
  • On-Resistance (Rds On) must not exceed 12mOhm at the specified gate voltage and current conditions
  • Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
  • Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

  • Surface mount package with compatible pinout and thermal characteristics
  • Package footprint must accommodate 8-pin DFN or equivalent power package configurations

The substitute parts listed below satisfy these criteria within the allowed electrical and mechanical parameters. Substitutes are grouped by their ability to meet or exceed the AON6224 performance envelope while maintaining functional equivalence in typical application circuits.

Parameter Comparison

Parameter AON6224 AONS66923 DMT10H015LCG-7 TPN13008NH,L1Q TPN1600ANH,L1Q
Manufacturer Alpha & Omega Alpha & Omega Diodes Inc. Toshiba Toshiba
Vdss (V) 100 100 100 80 100
Id @ Tc (A) 34 47 34 18 17
Rds On @ 20A, 10V (mOhm) 12 10.8 15 13.3 16
Vgs(th) @ 250µA (V Max) 2.4 2.6 3.5 4 4
Qg @ 10V (nC Max) 50 35 33.3 18 19
Ciss @ 50V (pF Max) 2420 1725 1871 1600 1600
Power Dissipation @ Tc (W) 56.5 48 42 42
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 155
Package 8-DFN (5x6) 8-DFN (5x6) V-DFN3333-8 8-TSON Adv. 8-TSON Adv.
Product Status Not For New Designs Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant RoHS Compliant RoHS Compliant

Engineering Selection Recommendations

AONS66923 (Alpha & Omega Semiconductor Inc.)

The AONS66923 is the primary recommended substitute for the AON6224. Both devices are manufactured by Alpha & Omega Semiconductor Inc. and share identical package geometry (8-DFN 5x6). The AONS66923 exceeds the AON6224 specification with 47A continuous drain current at Tc versus 34A, while maintaining superior on-resistance (10.8mOhm versus 12mOhm). The AONS66923 carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment. Gate charge is reduced to 35nC, and input capacitance is lower at 1725pF, providing improved switching performance. This part is suitable for direct replacement in applications where the AON6224 was originally specified.

DMT10H015LCG-7 (Diodes Incorporated)

The DMT10H015LCG-7 from Diodes Incorporated meets the 100V and 34A (Tc) electrical requirements of the AON6224. The device is housed in a V-DFN3333-8 package, which differs from the 8-DFN (5x6) footprint of the AON6224. On-resistance is 15mOhm at 20A and 10V, which exceeds the AON6224 specification of 12mOhm. Gate threshold voltage is elevated at 3.5V, and gate charge is reduced to 33.3nC. This part carries Active product status and ROHS3 compliance. Package compatibility must be verified before selection, as the V-DFN3333-8 footprint differs from the original 8-DFN (5x6).

TPN13008NH,L1Q (Toshiba Semiconductor and Storage)

The TPN13008NH,L1Q is rated for 80V drain-to-source voltage, which is below the 100V specification of the AON6224. This part does not meet the voltage requirement and is not suitable as a direct substitute. The device is included in the provided substitute list but fails the primary electrical compatibility criterion.

TPN1600ANH,L1Q (Toshiba Semiconductor and Storage)

The TPN1600ANH,L1Q from Toshiba meets the 100V voltage requirement and carries Active product status with RoHS compliance. However, the continuous drain current is rated at 17A (Tc), which is significantly below the 34A requirement of the AON6224. On-resistance is 16mOhm at 8.5A and 10V, exceeding the 12mOhm specification. The 8-TSON Advance package differs from the 8-DFN (5x6) footprint. This part does not provide equivalent current-handling capability and is not suitable as a primary substitute.

Frequently Asked Questions (FAQ)

Q: Can the AONS66923 be used as a direct replacement for the AON6224?

A: Yes. The AONS66923 is electrically and mechanically compatible with the AON6224. Both devices use the identical 8-DFN (5x6) package, share the same 100V voltage rating, and the AONS66923 exceeds the 34A current requirement with 47A capability at case temperature. The AONS66923 has superior on-resistance (10.8mOhm versus 12mOhm) and lower gate charge, making it a direct replacement with improved performance characteristics. The AONS66923 carries Active product status, ensuring continued availability.

Q: Why is the DMT10H015LCG-7 listed as a substitute if the package is different?

A: The DMT10H015LCG-7 meets the electrical specifications (100V, 34A at Tc) required by the AON6224 application. However, the package differs: DMT10H015LCG-7 uses V-DFN3333-8 while the AON6224 uses 8-DFN (5x6). This part is suitable only for applications where the printed circuit board layout can accommodate the different package footprint. Pin compatibility and thermal pad dimensions must be verified before selection.

Q: Are the Toshiba parts (TPN13008NH,L1Q and TPN1600ANH,L1Q) suitable substitutes?

A: The TPN13008NH,L1Q does not meet the 100V voltage requirement (rated 80V) and is not suitable. The TPN1600ANH,L1Q meets the 100V requirement but provides only 17A continuous drain current, which is insufficient for the 34A specification of the AON6224. Neither Toshiba part provides equivalent current-handling capability for applications requiring the full 34A rating.

Q: What is the significance of the AON6224 being marked "Not For New Designs"?

A: This designation indicates the AON6224 has been superseded or is in end-of-life status. The manufacturer recommends using alternative parts for new circuit designs. For existing production or maintenance applications, the AONS66923 is the recommended active-status replacement from the same manufacturer, ensuring design continuity and long-term supply availability.

Q: How do gate charge and input capacitance differences affect circuit performance?

A: Gate charge (Qg) and input capacitance (Ciss) determine switching speed and gate drive requirements. The AONS66923 has lower gate charge (35nC versus 50nC) and lower input capacitance (1725pF versus 2420pF), resulting in faster switching transitions and reduced gate drive power consumption. These improvements are beneficial in high-frequency switching applications. The DMT10H015LCG-7 and Toshiba parts also exhibit reduced gate charge, providing similar switching performance advantages.

Q: What package considerations apply when selecting a substitute?

A: The AON6224 uses an 8-DFN (5x6) surface mount package. The AONS66923 uses the identical package, enabling direct board-level replacement without layout modifications. The DMT10H015LCG-7 uses a V-DFN3333-8 package, and the Toshiba parts use 8-TSON Advance packages. Different packages have different footprints, pin spacing, and thermal pad dimensions. PCB layout compatibility must be verified before selecting a substitute with a different package type.

Q: Are all substitute parts RoHS compliant?

A: Yes. The AONS66923 and DMT10H015LCG-7 carry ROHS3 compliance. The Toshiba parts (TPN13008NH,L1Q and TPN1600ANH,L1Q) carry RoHS compliance. All listed substitutes meet regulatory requirements for hazardous substance restrictions.

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