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AON6162 Equivalent & Substitute Parts
Part Overview
The AON6162 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 60V drain-to-source voltage with 100A continuous drain current at 25°C. This device is housed in an 8-DFN (5x6) surface mount package and is part of the AlphaSGT™ series. The AON6162 is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).
Equivalent and substitute parts are identified when alternative MOSFETs meet or exceed the electrical and mechanical specifications of the primary device, enabling component sourcing flexibility, inventory management, and supply chain continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 60 | V |
| Current - Continuous Drain (Id) @ 25°C | 100 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 20A, 10V | mOhm |
| Vgs(th) (Max) @ Id | 3.2 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 | nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 | pF @ 30V |
| Power Dissipation (Max) | 215 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | - |
| Package | 8-DFN (5x6) | - |
| Vgs (Max) | ±20 | V |
Substitute Part Grouping Explanation
Substitution of the AON6162 is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss) must be equal to or greater than 60V
- Continuous Drain Current (Id) must be equal to or greater than 100A at 25°C
- Rds On (on-state resistance) must support the application's power dissipation requirements
- Gate threshold voltage (Vgs(th)) and gate charge (Qg) must be compatible with the drive circuit
- Input capacitance (Ciss) affects switching speed and drive requirements
- Maximum gate voltage (Vgs) must be ±20V or greater
- Operating temperature range must support the application environment
Mechanical Compatibility Criteria:
- Surface mount technology requirement
- Package footprint compatibility (5x6mm form factor)
- Moisture sensitivity level (MSL 1 - Unlimited)
Compliance Criteria:
- RoHS3 compliance
- Active product status
The substitute parts listed below meet or exceed these parameters while maintaining functional equivalence for the AON6162 in typical applications.
Parameter Comparison
| Parameter | AON6162 | STL140N6F7 | TPH2R608NH,L1Q |
|---|---|---|---|
| Manufacturer | Alpha & Omega Semiconductor Inc. | STMicroelectronics | Toshiba Semiconductor and Storage |
| Drain to Source Voltage (Vdss) | 60V | 60V | 75V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 145A (Tc) | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 20A, 10V | 2.5 mOhm @ 16A, 10V | 2.6 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA | 4V @ 1mA | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10V | 40 nC @ 10V | 72 nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 30V | 2700 pF @ 25V | 6000 pF @ 37.5V |
| Power Dissipation (Max) | 215W (Tc) | 125W (Tc) | 142W (Tc) |
| Operating Temperature Range | -55 to 150°C (TJ) | Up to 175°C (TJ) | Up to 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-DFN (5x6) | PowerFlat™ (5x6) | 8-SOP Advance (5x5) |
| Vgs (Max) | ±20V | ±20V | ±20V |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
STL140N6F7 (STMicroelectronics)
The STL140N6F7 is a direct electrical equivalent for the AON6162, matching the 60V Vdss rating and exceeding the 100A continuous drain current specification at 145A. This device features reduced gate charge (40 nC versus 100 nC), resulting in lower switching losses and faster switching performance. The STL140N6F7 is housed in a PowerFlat™ (5x6) package, maintaining the same footprint dimensions as the AON6162. Both devices are RoHS3 compliant, Active status, and rated for ±20V gate voltage. The STL140N6F7 supports higher junction temperatures (175°C) compared to the AON6162 (150°C), providing additional thermal margin in high-temperature applications.
TPH2R608NH,L1Q (Toshiba Semiconductor and Storage)
The TPH2R608NH,L1Q is a functional substitute for the AON6162 with enhanced voltage rating (75V Vdss versus 60V), supporting higher drain current (150A versus 100A). This device is suitable for applications requiring higher voltage headroom or increased current capacity. The TPH2R608NH,L1Q is packaged in an 8-SOP Advance (5x5) format, which differs from the AON6162's 8-DFN (5x6) package. Both devices are RoHS compliant, Active status, and rated for ±20V gate voltage with MSL 1 (Unlimited). The operating temperature range matches the AON6162 at 150°C maximum junction temperature.
Both substitute parts maintain compliance with RoHS standards, unlimited moisture sensitivity levels, and Active product status, ensuring long-term availability and regulatory alignment with the original AON6162.
Frequently Asked Questions (FAQ)
Q: Can the STL140N6F7 be used as a direct replacement for the AON6162?
A: The STL140N6F7 is electrically compatible with the AON6162 for applications requiring 60V operation and up to 100A continuous drain current. Both devices share the same 60V Vdss rating, ±20V gate voltage rating, and 5x6mm footprint dimensions. The STL140N6F7 provides higher current capability (145A) and lower gate charge (40 nC), which may improve switching performance. Verification of PCB layout compatibility with the PowerFlat™ package is required.
Q: What are the key differences between the AON6162 and TPH2R608NH,L1Q?
A: The TPH2R608NH,L1Q has a higher Vdss rating (75V versus 60V) and higher continuous drain current (150A versus 100A). The package differs: TPH2R608NH,L1Q uses 8-SOP Advance (5x5) while the AON6162 uses 8-DFN (5x6). Both devices support ±20V gate voltage and have MSL 1 (Unlimited) ratings. PCB layout modifications are required due to package differences.
Q: Are all three devices RoHS compliant?
A: Yes. The AON6162 and STL140N6F7 are RoHS3 compliant. The TPH2R608NH,L1Q is RoHS compliant. All three devices meet regulatory requirements for hazardous substance restrictions.
Q: What is the impact of gate charge differences on circuit design?
A: Gate charge (Qg) affects the energy required to switch the MOSFET and influences switching speed. The STL140N6F7 has lower gate charge (40 nC) compared to the AON6162 (100 nC), resulting in reduced switching losses and potentially faster switching transitions. The TPH2R608NH,L1Q has intermediate gate charge (72 nC). Drive circuit design must accommodate the gate charge specifications of the selected device.
Q: Can package differences affect substitution decisions?
A: Yes. The AON6162 (8-DFN 5x6) and STL140N6F7 (PowerFlat™ 5x6) share identical footprint dimensions and can use the same PCB layout. The TPH2R608NH,L1Q (8-SOP Advance 5x5) has different dimensions and requires PCB layout modifications. Package selection depends on available PCB space and thermal management requirements.
Q: What is the significance of the higher operating temperature rating of the STL140N6F7?
A: The STL140N6F7 supports junction temperatures up to 175°C, compared to 150°C for the AON6162 and TPH2R608NH,L1Q. This higher temperature rating provides additional thermal margin in applications operating near maximum junction temperature limits, potentially allowing for reduced heatsinking requirements or higher ambient temperature operation.
Q: Are moisture sensitivity levels equivalent across all three devices?
A: Yes. All three devices are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Storage and handling requirements are identical across the AON6162, STL140N6F7, and TPH2R608NH,L1Q.
Q: How do input capacitance differences affect circuit performance?
A: Input capacitance (Ciss) influences gate drive circuit impedance and switching speed. The STL140N6F7 has lower Ciss (2700 pF @ 25V) compared to the AON6162 (4850 pF @ 30V), resulting in faster switching transitions and lower gate drive power requirements. The TPH2R608NH,L1Q has higher Ciss (6000 pF @ 37.5V), requiring higher gate drive current for equivalent switching speed.
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