AON4803 Equivalent & Substitute Parts

Part Overview

The AON4803 is a dual P-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc., designed for surface mount applications in logic-level gate switching circuits. This component integrates two P-channel MOSFETs in a compact 8-DFN (3x2) package with a maximum drain-source voltage rating of 20V and continuous drain current capability of 3.4A at 25°C.

The AON4803 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

AON4803
Alpha & Omega Semiconductor Inc.In Stock: 156276AON4803 Datasheet
AON4803
Current Part
NTHD4102PT1G
onsemiIn Stock: 41313NTHD4102PT1G Datasheet
NTHD4102PT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Continuous Drain Current (Id) @ 25°C 3.4 A
On-Resistance (Rds On) @ Id, Vgs 90 mOhm @ 3.4A, 4.5V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 1 V @ 250µA
Gate Charge (Qg) @ Vgs 8 nC @ 4.5V
Input Capacitance (Ciss) @ Vds 745 pF @ 10V
Maximum Power Dissipation 1.7 W
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 P-Channel (Dual)
Package Type 8-DFN (3x2)
FET Feature Logic Level Gate

Substitute Part Grouping Explanation

Substitution of the AON4803 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 20V
  • Configuration: Must be 2 P-Channel (Dual) MOSFET array
  • FET Feature: Must support Logic Level Gate operation
  • Operating Temperature Range: Must encompass -55°C to 150°C (TJ)
  • Package Type: Must be 8-SMD, Flat Lead surface mount configuration

Performance Considerations:

  • Continuous Drain Current (Id): Substitute must support minimum 2.9A at 25°C
  • On-Resistance (Rds On): Substitute performance at rated current and gate voltage
  • Gate Charge (Qg): Switching characteristics at 4.5V gate voltage
  • Input Capacitance (Ciss): Parasitic capacitance at specified drain-source voltage

Compliance Requirements:

  • RoHS3 Compliance: Required
  • Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
  • REACH Status: REACH Unaffected

The NTHD4102PT1G from onsemi meets all substitution criteria as an active product with equivalent electrical specifications and identical package configuration.

Parameter Comparison

Parameter AON4803 (Main Part) NTHD4102PT1G (Substitute) Unit
Manufacturer Alpha & Omega Semiconductor Inc. onsemi
Product Status Obsolete Active
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20 20 V
Continuous Drain Current (Id) @ 25°C 3.4 2.9 A
On-Resistance (Rds On) @ Id, Vgs 90 mOhm @ 3.4A, 4.5V 80 mOhm @ 2.9A, 4.5V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 1 1.5 V @ 250µA
Gate Charge (Qg) @ Vgs 8 8.6 nC @ 4.5V
Input Capacitance (Ciss) @ Vds 745 @ 10V 750 @ 16V pF
Maximum Power Dissipation 1.7 1.1 W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
FET Feature Logic Level Gate Logic Level Gate
Package Type 8-DFN (3x2) ChipFET™
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Product Status Consideration: The AON4803 is classified as obsolete, making the NTHD4102PT1G the appropriate substitute as an active product from onsemi. Active product status ensures continued availability, manufacturing support, and compliance with current regulatory requirements.

Compliance Alignment: Both the AON4803 and NTHD4102PT1G maintain RoHS3 compliance and REACH unaffected status, ensuring regulatory compatibility across applications. Both components feature MSL Level 1 (Unlimited) moisture sensitivity classification, indicating no special moisture handling requirements during storage or assembly.

Electrical Performance: The NTHD4102PT1G operates within the same voltage and temperature specifications as the AON4803. The substitute part supports a continuous drain current of 2.9A, which is lower than the main part's 3.4A rating. Applications requiring the full 3.4A continuous current capability must evaluate thermal and current distribution characteristics within the specific circuit design.

The on-resistance of the NTHD4102PT1G (80 mOhm @ 2.9A, 4.5V) is lower than the AON4803 (90 mOhm @ 3.4A, 4.5V), resulting in reduced power dissipation and improved switching efficiency at the substitute part's rated current.

Package Compatibility: Both components utilize 8-SMD, flat lead surface mount configurations. The AON4803 is specified as 8-DFN (3x2), while the NTHD4102PT1G uses onsemi's ChipFET™ package designation. Physical footprint compatibility must be confirmed through detailed package drawings and PCB layout considerations.

Frequently Asked Questions (FAQ)

Q: Can the NTHD4102PT1G directly replace the AON4803 in existing designs?

A: The NTHD4102PT1G is electrically equivalent for applications operating at or below 2.9A continuous drain current. The substitute part meets all voltage, temperature, and logic-level gate requirements. Package footprint compatibility must be verified through detailed package specifications and PCB layout analysis.

Q: What is the significance of the lower continuous drain current rating in the NTHD4102PT1G?

A: The NTHD4102PT1G supports 2.9A continuous drain current compared to the AON4803's 3.4A. Applications requiring the full 3.4A capability must evaluate whether the substitute part's current rating is sufficient for the intended circuit operation. Thermal analysis and current distribution within the dual MOSFET array must be performed for applications operating near the current limit.

Q: Are there differences in gate threshold voltage between these parts?

A: The AON4803 has a gate threshold voltage of 1V @ 250µA, while the NTHD4102PT1G is rated at 1.5V @ 250µA. This difference affects gate drive requirements and switching characteristics. Circuit designs relying on specific gate threshold voltage performance must account for this variation in gate drive voltage selection.

Q: How do the gate charge specifications compare?

A: The AON4803 specifies 8nC gate charge @ 4.5V, while the NTHD4102PT1G specifies 8.6nC @ 4.5V. This minor difference has minimal impact on switching speed and gate drive circuit design. Both values are within typical tolerance ranges for dual P-channel MOSFET arrays.

Q: What is the difference between the 8-DFN and ChipFET™ package designations?

A: Both designations refer to 8-SMD, flat lead surface mount packages with identical electrical connectivity. The 8-DFN (3x2) and ChipFET™ are manufacturer-specific package naming conventions. Physical dimensions and PCB footprint compatibility must be confirmed through detailed package drawings from each manufacturer.

Q: Are both parts compliant with current regulatory standards?

A: Both the AON4803 and NTHD4102PT1G are RoHS3 compliant and REACH unaffected. Both components feature MSL Level 1 (Unlimited) moisture sensitivity classification. These compliance statuses ensure compatibility with current manufacturing and environmental regulations.

Q: Why is the NTHD4102PT1G recommended over the AON4803?

A: The NTHD4102PT1G is an active product with ongoing manufacturer support, while the AON4803 is obsolete. Active product status ensures continued availability, manufacturing consistency, and compliance with evolving regulatory requirements. For new designs or production continuity, the active substitute part is the appropriate selection.

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