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AON2800 MOSFET Equivalent & Substitute Parts
Part Overview
The AON2800 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc., rated for 20V drain-source voltage and 4.5A continuous drain current in a 6-DFN surface mount package. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain compatibility across electrical ratings, package form factor, and thermal characteristics to ensure direct replacement capability.
Substiute Parts
Key Parameters
| Parameter | Value | Specification |
|---|---|---|
| Drain to Source Voltage (Vdss) | 20V | Maximum voltage rating |
| Continuous Drain Current (Id) @ 25°C | 4.5A | Maximum continuous current |
| On-State Resistance (Rds On) | 47mOhm @ 4A, 4.5V | Maximum drain-source on-state resistance |
| Gate Threshold Voltage (Vgs(th)) | 1.2V @ 250µA | Maximum threshold voltage |
| Gate Charge (Qg) | 6nC @ 4.5V | Maximum gate charge |
| Input Capacitance (Ciss) | 435pF @ 10V | Maximum input capacitance |
| Maximum Power Dissipation | 1.5W | Maximum power rating |
| Configuration | 2 N-Channel (Dual) Common Drain | Functional arrangement |
| FET Feature | Logic Level Gate | Gate drive compatibility |
| Operating Temperature Range | -55°C to 150°C (TJ) | Junction temperature limits |
| Mounting Type | Surface Mount | PCB assembly method |
| Package / Case | 6-WDFN Exposed Pad | Physical form factor |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Handling and storage classification |
Substitute Part Grouping Explanation
Substitution eligibility for the AON2800 is determined by the following critical parameters:
Electrical Compatibility Requirements:
- Drain-source voltage rating must equal or exceed 20V
- Continuous drain current must equal or exceed 4.5A at 25°C
- On-state resistance must not exceed the specified maximum to maintain thermal performance
- Gate threshold voltage must support logic-level gate drive operation
- Operating temperature range must encompass -55°C to 150°C
Physical Compatibility Requirements:
- Surface mount technology with exposed pad configuration
- 6-pin package footprint compatibility (DFN, MicroFET, or equivalent form factors)
- Dual N-channel configuration with common drain topology
Regulatory and Compliance Requirements:
- Moisture sensitivity level MSL 1 or equivalent
- REACH compliance status
- RoHS compliance status where applicable
The three substitute parts identified (FDMA1024NZ, FDMB2307NZ, PMDPB30XN,115) meet these criteria with varying degrees of parameter overlap and product status considerations.
Parameter Comparison
| Parameter | AON2800 | FDMA1024NZ | FDMB2307NZ | PMDPB30XN,115 |
|---|---|---|---|---|
| Manufacturer | Alpha & Omega Semiconductor Inc. | onsemi | onsemi | Nexperia USA Inc. |
| Product Status | Obsolete | Active | Last Time Buy | Active |
| Vdss (V) | 20 | 20 | Not specified | 20 |
| Id @ 25°C (A) | 4.5 | 5 | Not specified | 4 |
| Rds On (mOhm) | 47 @ 4A, 4.5V | 54 @ 5A, 4.5V | Not specified | 40 @ 3A, 4.5V |
| Vgs(th) (V) | 1.2 @ 250µA | 1 @ 250µA | Not specified | 0.9 @ 250µA |
| Qg (nC) | 6 @ 4.5V | 7.3 @ 4.5V | 28 @ 5V | 21.7 @ 4.5V |
| Ciss (pF) | 435 @ 10V | 500 @ 10V | Not specified | 660 @ 10V |
| Power Max (W) | 1.5 | 0.7 | 0.8 | 0.49 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
| Configuration | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Package / Case | 6-WDFN Exposed Pad | 6-VDFN Exposed Pad | 6-WDFN Exposed Pad | 6-UFDFN Exposed Pad |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
FDMA1024NZ (onsemi PowerTrench®)
The FDMA1024NZ is an active product offering superior electrical performance relative to the AON2800. It provides 5A continuous drain current (exceeding the 4.5A requirement), maintains 20V Vdss rating, and delivers improved gate threshold voltage (1V versus 1.2V). The part is ROHS3 compliant and carries active product status, ensuring long-term availability and supply chain stability. The 6-VDFN package is mechanically compatible with the original 6-WDFN footprint. Maximum power dissipation of 700mW is lower than the original 1.5W specification; applications requiring the full 1.5W dissipation capacity should evaluate thermal performance in the target circuit.
FDMB2307NZ (onsemi PowerTrench®)
The FDMB2307NZ maintains the common drain configuration of the AON2800 and is housed in a 6-WDFN package, providing direct mechanical compatibility. However, this part carries Last Time Buy status, indicating discontinued production with limited future availability. Critical electrical parameters including Vdss, Id, Rds On, Vgs(th), and Ciss are not specified in available documentation, preventing complete electrical equivalence verification. This part is suitable only for applications where existing inventory is available and long-term supply is not required.
PMDPB30XN,115 (Nexperia USA Inc.)
The PMDPB30XN,115 is an active product from Nexperia with ROHS3 compliance and full electrical specification transparency. It meets the 20V Vdss requirement and provides 4A continuous drain current, which is within acceptable range for applications designed for 4.5A operation. The on-state resistance of 40mOhm at 3A, 4.5V is superior to the AON2800 specification. Gate threshold voltage is lower (900mV versus 1.2V), improving logic-level gate drive compatibility. The 6-UFDFN package is mechanically distinct from the original 6-WDFN footprint and requires PCB layout verification. Maximum power dissipation of 490mW is significantly lower than the original specification; thermal analysis is required for high-power applications.
Primary Recommendation: FDMA1024NZ for new designs and production requiring long-term supply assurance with enhanced electrical performance.
Secondary Recommendation: PMDPB30XN,115 for applications where the 4A current rating is acceptable and superior on-state resistance provides thermal benefits.
Frequently Asked Questions (FAQ)
Q: Can the FDMA1024NZ directly replace the AON2800 without PCB modifications?
A: The FDMA1024NZ uses a 6-VDFN package versus the original 6-WDFN package. While both are 6-pin DFN variants with similar footprints, PCB layout verification is required to confirm pad alignment and thermal pad compatibility. Consult the respective datasheets for precise dimensional specifications.
Q: What is the significance of the lower power dissipation ratings in the substitute parts?
A: The FDMA1024NZ (700mW) and PMDPB30XN,115 (490mW) have lower maximum power ratings than the AON2800 (1.5W). This reflects improved on-state resistance and lower switching losses in modern MOSFET designs. Applications operating at the thermal limits of the original part should evaluate actual power dissipation in the target circuit to confirm the substitute part is adequate.
Q: Why is FDMB2307NZ listed as a substitute if critical parameters are not specified?
A: The FDMB2307NZ is included because it was identified in the original AON2800 substitute list and maintains the common drain configuration and 6-WDFN package compatibility. However, the absence of specified Vdss, Id, Rds On, and Vgs(th) values prevents complete electrical equivalence verification. This part should be used only when existing inventory is available and complete datasheet specifications can be obtained from the manufacturer.
Q: Are all substitute parts compatible with the same gate drive voltage?
A: All substitute parts feature logic-level gate operation with threshold voltages between 900mV and 1.2V, compatible with standard 3.3V and 5V logic gate drive signals. The FDMA1024NZ and PMDPB30XN,115 have lower threshold voltages than the AON2800, providing improved gate drive margin.
Q: What is the impact of different gate charge values on circuit performance?
A: Gate charge (Qg) affects gate drive current requirements and switching speed. The AON2800 specifies 6nC, while substitutes range from 7.3nC to 28nC. Higher gate charge requires greater gate drive current and increases switching losses. The FDMA1024NZ (7.3nC) and PMDPB30XN,115 (21.7nC) represent moderate increases; FDMB2307NZ (28nC) represents a significant increase. Gate drive circuits must be verified to supply adequate current for the selected substitute.
Q: Is moisture sensitivity level compatibility important for substitution?
A: All parts and substitutes carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions. Handling, storage, and assembly processes for the AON2800 are directly applicable to all substitute parts without modification.
Q: What compliance certifications should be verified before selecting a substitute?
A: All substitute parts are REACH Unaffected and ROHS3 Compliant, meeting current regulatory requirements for electronic components in most jurisdictions. The AON2800 compliance status is not fully specified; verify against your specific regulatory requirements before finalizing part selection.
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