AOD5N50 N-Channel 500V 5A MOSFET Equivalent & Substitute Parts

Part Overview

The AOD5N50 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage with 5A continuous drain current in a surface mount TO-252 (DPAK) package. This device is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Equivalent and substitute parts are necessary for ongoing production support, legacy system maintenance, and design flexibility when the primary part becomes unavailable or when alternative sourcing is required.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	5	A
On-State Resistance (Rds On) @ 2.5A, 10V	1.6	Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	14	nC
Input Capacitance (Ciss) @ 25V	670	pF
Power Dissipation (Max)	104	W
Operating Temperature Range	-50 to 150	°C
Package Type	TO-252 (DPAK)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the AOD5N50 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-source voltage rating (Vdss) of 500V or higher
Continuous drain current (Id) of 5A or greater at 25°C
Surface mount DPAK (TO-252) package compatibility
Gate drive voltage compatibility at 10V
Operating temperature range encompassing -50°C to 150°C

Secondary Compatibility Factors:

On-state resistance (Rds On) within acceptable thermal and efficiency margins
Gate threshold voltage (Vgs(th)) suitable for standard logic-level gate drive circuits
Input capacitance (Ciss) and gate charge (Qg) for switching speed considerations
Power dissipation capability for thermal management

Substitute parts are grouped into two categories: Direct Equivalents (matching or exceeding all primary criteria with minimal parameter variance) and Functional Alternatives (meeting primary criteria with acceptable trade-offs in secondary parameters such as gate charge or input capacitance).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (Ω)	Vgs(th) (V)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Power Diss. (W)	Temp. Range (°C)	Status
AOD5N50	Alpha & Omega Semiconductor	500	5	1.6 @ 2.5A	4.5 @ 250µA	14	670	104	-50 to 150	Not For New Designs
FDD5N50NZTM	onsemi	500	4	1.5 @ 2A	5 @ 250µA	12	440	62	-55 to 150	Active
FDD5N50TM-WS	onsemi	500	4	1.4 @ 2A	5 @ 250µA	15	640	40	-55 to 150	Obsolete
IRFR430APBF	Vishay Siliconix	500	5	1.7 @ 3A	4.5 @ 250µA	24	490	110	-55 to 150	Active
IRFR430ATRLPBF	Vishay Siliconix	500	5	1.7 @ 3A	4.5 @ 250µA	24	490	110	-55 to 150	Active
IRFR430ATRPBF	Vishay Siliconix	500	5	1.7 @ 3A	4.5 @ 250µA	24	490	110	-55 to 150	Active
IRFR825TRPBF	Infineon Technologies	500	6	1.3 @ 3.7A	5 @ 250µA	34	1346	119	-55 to 150	Not For New Designs
STD5N52K3	STMicroelectronics	525	4.4	1.5 @ 2.2A	4.5 @ 50µA	17	545	70	-55 to 150	Active
STD5N52U	STMicroelectronics	525	4.4	1.5 @ 2.2A	4.5 @ 50µA	16.9	529	70	-55 to 150	Active
TK5P50D(T6RSS-Q)	Toshiba Semiconductor and Storage	500	5	1.5 @ 2.5A	4.4 @ 1mA	11	490	80	-55 to 150	Active
TK5P53D(T6RSS-Q)	Toshiba Semiconductor and Storage	525	5	1.5 @ 2.5A	4.4 @ 1mA	11	540	80	-55 to 150	Active

Engineering Selection Recommendations

Direct Equivalents (Recommended for Replacement):

The following parts satisfy all primary substitution criteria and are recommended as direct replacements for the AOD5N50:

TK5P50D(T6RSS-Q) (Toshiba): Matches 500V/5A rating with equivalent Rds On (1.5Ω) and lower gate charge (11 nC). Active product status ensures long-term availability. Tape & Reel packaging supports high-volume production.
IRFR430APBF, IRFR430ATRLPBF, IRFR430ATRPBF (Vishay Siliconix): All three variants meet 500V/5A specifications with active product status. Slightly higher Rds On (1.7Ω) and gate charge (24 nC) are acceptable trade-offs. Available in multiple packaging formats (Tube, Tape & Reel, Cut Tape).

Functional Alternatives (Acceptable with Design Review):

FDD5N50NZTM (onsemi): Active product with 500V rating but reduced continuous current (4A). Suitable for applications with lower current demands. Lower gate charge (12 nC) and input capacitance (440 pF) provide faster switching characteristics.
STD5N52K3, STD5N52U (STMicroelectronics): Both rated for 525V with 4.4A continuous current. Higher voltage rating provides additional design margin. Active product status and high inventory availability (57,600 and 15,265 units respectively) support supply chain continuity.
TK5P53D(T6RSS-Q) (Toshiba): 525V/5A rating with equivalent Rds On and lower gate charge. Suitable for applications requiring higher voltage margin.

Parts Not Recommended for New Designs:

FDD5N50TM-WS (onsemi): Marked as Obsolete. While electrically compatible, obsolete status indicates discontinued manufacturing and limited future availability.
IRFR825TRPBF (Infineon): Marked as "Not For New Designs." Although rated for 6A (exceeding AOD5N50 current), significantly higher gate charge (34 nC) and input capacitance (1346 pF) result in slower switching performance and increased gate drive requirements.

Compliance and Certification:

All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the environmental and regulatory status of the AOD5N50. All parts carry EAR99 export classification and identical HTSUS codes (8541.29.0095), confirming regulatory equivalence.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with lower continuous current rating (e.g., 4A instead of 5A)?

A: Substitution with lower current ratings is acceptable only if the application's maximum drain current does not exceed the substitute part's rating. For example, FDD5N50NZTM (4A) is suitable for circuits drawing 4A or less. Exceeding the rated current causes thermal stress and device failure. Review circuit current requirements before selecting a lower-rated substitute.

Q: What is the significance of the higher gate charge in IRFR825TRPBF compared to AOD5N50?

A: Gate charge (Qg) determines the energy required to switch the transistor on and off. IRFR825TRPBF has 34 nC versus AOD5N50's 14 nC. Higher gate charge requires stronger gate drive circuits and increases switching losses. This makes IRFR825TRPBF less suitable for high-frequency switching applications despite its higher current rating.

Q: Are onsemi FDD5N50NZTM and FDD5N50TM-WS interchangeable?

A: Both parts share identical electrical specifications (500V, 4A, 1.5Ω Rds On). However, FDD5N50TM-WS is marked Obsolete, while FDD5N50NZTM is Active. For new designs and ongoing production, FDD5N50NZTM is the preferred choice due to guaranteed long-term availability and manufacturing support.

Q: Why do STMicroelectronics parts (STD5N52K3, STD5N52U) have a higher voltage rating (525V) than the AOD5N50 (500V)?

A: The 525V rating provides a 5% voltage margin above the AOD5N50's 500V specification. This higher rating does not affect compatibility in 500V applications; it simply offers additional design margin for voltage transients and overshoot conditions. Both parts are electrically compatible with AOD5N50 circuits.

Q: What packaging options are available for substitute parts?

A: Substitute parts are available in multiple packaging formats: Cut Tape (CT) & Digi-Reel® for automated assembly, Tape & Reel (TR) for high-volume production, and Tube for manual handling. All substitute parts maintain the same TO-252 (DPAK) surface mount package footprint, ensuring PCB compatibility without layout modifications.

Q: Can I use IRFR825TRPBF as a direct replacement despite its "Not For New Designs" status?

A: IRFR825TRPBF meets the 500V/5A electrical requirements and is mechanically compatible. However, its "Not For New Designs" status indicates Infineon has superseded this part. Additionally, its significantly higher gate charge (34 nC versus 14 nC) and input capacitance (1346 pF versus 670 pF) may require gate drive circuit modifications. Use only if existing inventory is available and gate drive capability is confirmed.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant and REACH unaffected, matching the environmental compliance status of the AOD5N50. This ensures regulatory equivalence for applications subject to RoHS and REACH requirements.

Q: What is the difference between Vgs(th) specifications at different test currents (e.g., 250µA vs. 1mA)?

A: Gate threshold voltage (Vgs(th)) is measured at a specified drain current. Lower test currents (250µA) represent the point where the transistor begins to conduct; higher test currents (1mA) indicate stronger conduction. Both specifications are valid; the difference reflects measurement methodology rather than device performance. For gate drive circuit design, use the specified Vgs(th) value provided in the datasheet for your application's operating conditions.

Q: Which substitute part offers the best thermal performance?

A: TK5P50D(T6RSS-Q) and TK5P53D(T6RSS-Q) (Toshiba) offer 80W power dissipation with the lowest gate charge (11 nC), resulting in minimal switching losses. IRFR430 variants (Vishay) provide 110W power dissipation but with higher gate charge (24 nC). For thermal-limited applications, Toshiba parts are preferred; for high-power applications, Vishay parts offer greater headroom.

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