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AOD516 N-Channel MOSFET 30V 18A/46A TO-252 Equivalent & Substitute Parts
Part Overview
The AOD516 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 18A at Ta (ambient temperature) and 46A at Tc (case temperature). The device is housed in a TO-252 (DPAK) surface mount package and is designed for general-purpose switching applications requiring moderate current handling and low on-resistance characteristics.
The AOD516 is classified as Obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET specification.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Ta) | 18 | A |
| Continuous Drain Current @ 25°C (Tc) | 46 | A |
| On-Resistance (Rds On Max) @ Id, Vgs | 5 mOhm @ 20A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 2.2 | V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 33 | nC @ 10V |
| Maximum Gate Voltage (Vgs Max) | ±20 | V |
| Input Capacitance (Ciss Max) @ Vds | 1229 | pF @ 15V |
| Power Dissipation (Ta) | 2.5 | W |
| Power Dissipation (Tc) | 50 | W |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-252 (DPAK) | Surface Mount |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the AOD516 N-Channel MOSFET is determined by strict adherence to the following electrical and mechanical parameters:
Critical Substitution Criteria:
-
Drain-to-Source Voltage (Vdss): Must equal 30V. All substitute parts maintain this specification.
-
Continuous Drain Current (Id @ 25°C): Substitute parts must meet or exceed the AOD516 rating of 18A (Ta) and 46A (Tc). Higher current ratings are acceptable for direct substitution.
-
On-Resistance (Rds On): The AOD516 specifies 5 mOhm maximum at 20A, 10V gate voltage. Substitute parts with equal or lower on-resistance values maintain electrical performance equivalence.
-
Gate Threshold Voltage (Vgs(th)): Must remain within ±20V maximum gate voltage specification. Threshold voltage values between 2.2V and 3V at 250µA are compatible.
-
Package Type: All substitute parts utilize TO-252 (DPAK) surface mount packaging with identical pinout and thermal characteristics (2 Leads + Tab, SC-63).
-
Operating Temperature Range: All parts operate across -55°C to 175°C junction temperature range.
-
Compliance Standards: All substitute parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status.
Substitute parts are grouped by their ability to directly replace the AOD516 in existing circuit designs without modification to PCB layout, gate drive circuitry, or thermal management systems.
Parameter Comparison
| Parameter | AOD516 | FDD6670A | FDD8870 | IPD040N03LGATMA1 | NTD4965NT4G | NVD4C05NT4G |
|---|---|---|---|---|---|---|
| Manufacturer | Alpha & Omega | onsemi | onsemi | Infineon | onsemi | onsemi |
| Vdss (V) | 30 | 30 | 30 | 30 | 30 | 30 |
| Id @ Ta (A) | 18 | 15 | 21 | — | 13 | 22 |
| Id @ Tc (A) | 46 | 66 | 160 | 90 | 68 | 90 |
| Rds On Max (mOhm) | 5 @ 20A, 10V | 8 @ 15A, 10V | 3.9 @ 35A, 10V | 4 @ 30A, 10V | 4.7 @ 30A, 10V | 4.1 @ 45A, 10V |
| Vgs(th) Max (V) | 2.2 @ 250µA | 3 @ 250µA | 2.5 @ 250µA | 2.2 @ 250µA | 2.5 @ 250µA | 2.2 @ 250µA |
| Qg Max (nC) | 33 @ 10V | 22 @ 5V | 118 @ 10V | 38 @ 10V | 17.2 @ 4.5V | 14 @ 4.5V |
| Vgs Max (V) | ±20 | ±20 | ±20 | ±20 | ±20 | ±20 |
| Ciss Max (pF) | 1229 @ 15V | 1755 @ 15V | 5160 @ 15V | 3900 @ 15V | 1710 @ 15V | 1950 @ 25V |
| Power Dissipation Ta (W) | 2.5 | 3.2 | — | — | 1.39 | 3.5 |
| Power Dissipation Tc (W) | 50 | 63 | 160 | 79 | — | 57 |
| Operating Temperature (°C) | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 |
| Package | TO-252 (DPAK) | TO-252AA | TO-252AA | PG-TO252-3-11 | DPAK-3 | DPAK |
| Product Status | Obsolete | Last Time Buy | Obsolete | Active | Active | Active |
| RoHS Status | ROHS3 | ROHS3 | ROHS3 | ROHS3 | ROHS3 | ROHS3 |
Engineering Selection Recommendations
Primary Substitute: NVD4C05NT4G (onsemi)
The NVD4C05NT4G is the preferred substitute for the AOD516. This part maintains electrical equivalence across all critical parameters: 30V Vdss, 22A continuous drain current at Ta (exceeding the AOD516's 18A), and 90A at Tc (exceeding the AOD516's 46A). The on-resistance of 4.1 mOhm at 45A, 10V is superior to the AOD516's 5 mOhm specification. Gate threshold voltage matches at 2.2V. The NVD4C05NT4G carries Active product status, ensuring long-term availability and supply chain stability. This part is AEC-Q101 qualified for automotive applications and maintains ROHS3 compliance and MSL Level 1 rating. Identical TO-252 (DPAK) packaging ensures direct PCB compatibility without layout modification.
Secondary Substitute: IPD040N03LGATMA1 (Infineon Technologies)
The IPD040N03LGATMA1 provides an alternative with superior performance characteristics. Rated for 90A continuous drain current at Tc (nearly double the AOD516's 46A), this part offers enhanced thermal headroom and current capacity. On-resistance of 4 mOhm at 30A, 10V is superior to the AOD516. Gate threshold voltage of 2.2V matches the AOD516 specification. The part maintains Active product status with ROHS3 compliance and MSL Level 1 rating. Infineon's OptiMOS™ series technology provides advanced performance. TO-252-3 packaging is mechanically and electrically compatible with the AOD516.
Tertiary Substitute: FDD6670A (onsemi)
The FDD6670A is suitable for applications where the AOD516's current rating is marginal. Rated for 15A at Ta and 66A at Tc, this part exceeds the AOD516's specifications. On-resistance of 8 mOhm at 15A, 10V is higher than the AOD516's 5 mOhm, resulting in increased power dissipation in high-current applications. Gate threshold voltage of 3V is within acceptable limits. The part carries Last Time Buy status, indicating limited future availability. ROHS3 compliance and MSL Level 1 rating are maintained. TO-252AA packaging is compatible with the AOD516.
Alternative Substitute: NTD4965NT4G (onsemi)
The NTD4965NT4G is suitable for lower-current applications where the AOD516's full current capacity is not required. Rated for 13A at Ta and 68A at Tc, this part provides adequate performance for moderate-current switching. On-resistance of 4.7 mOhm at 30A, 10V is comparable to the AOD516. Gate threshold voltage of 2.5V is within specification. The part carries Active product status with ROHS3 compliance and MSL Level 1 rating. DPAK-3 packaging is compatible with the AOD516.
Not Recommended: FDD8870 (onsemi)
The FDD8870 is not recommended as a direct substitute despite meeting voltage and current specifications. This part carries Obsolete product status, creating the same supply chain risk as the original AOD516. Gate charge of 118 nC at 10V is significantly higher than the AOD516's 33 nC, requiring modified gate drive circuitry. Input capacitance of 5160 pF at 15V is substantially higher than the AOD516's 1229 pF, affecting switching speed and gate drive requirements. These differences necessitate circuit redesign and validation.
Frequently Asked Questions (FAQ)
Q: Can the NVD4C05NT4G directly replace the AOD516 without PCB modification?
A: Yes. The NVD4C05NT4G maintains identical TO-252 (DPAK) packaging with the same pinout and thermal interface as the AOD516. No PCB layout changes are required. Electrical parameters are compatible across all critical specifications.
Q: What is the difference between Ta and Tc current ratings?
A: Ta (ambient temperature) represents continuous drain current at 25°C ambient temperature with the device mounted on a standard PCB. Tc (case temperature) represents continuous drain current with the device case maintained at 25°C through active cooling or thermal management. Tc ratings are typically higher due to improved heat dissipation. Design calculations should use the Ta rating for worst-case thermal conditions unless active cooling is implemented.
Q: Why is the FDD8870 not recommended despite higher current ratings?
A: The FDD8870 carries Obsolete product status, creating the same supply chain risk as the original AOD516. Additionally, its gate charge (118 nC) and input capacitance (5160 pF) are significantly higher than the AOD516, requiring modifications to gate drive circuitry and potentially affecting switching frequency and efficiency. These differences necessitate circuit redesign and validation testing.
Q: Are all substitute parts ROHS3 compliant?
A: Yes. All substitute parts listed maintain ROHS3 compliance and REACH Unaffected status, meeting environmental and regulatory requirements equivalent to the AOD516.
Q: What does MSL Level 1 (Unlimited) mean?
A: MSL (Moisture Sensitivity Level) Level 1 indicates the component has unlimited shelf life and does not require special moisture control during storage or handling. No baking or desiccant storage is required prior to soldering.
Q: Can I use the IPD040N03LGATMA1 in a design originally specified for the AOD516?
A: Yes. The IPD040N03LGATMA1 is electrically and mechanically compatible with the AOD516. Its superior current rating (90A at Tc versus 46A) and lower on-resistance (4 mOhm versus 5 mOhm) provide enhanced performance margins. No circuit modifications are required. The part's Active product status ensures long-term availability.
Q: What is the significance of gate threshold voltage (Vgs(th)) differences between substitute parts?
A: Gate threshold voltage determines the minimum gate-source voltage required to turn the MOSFET on. The AOD516 specifies 2.2V maximum at 250µA. Substitute parts with threshold voltages between 2.2V and 3V are compatible with standard gate drive circuits. Higher threshold voltages may require increased gate drive voltage to achieve full on-state performance. All listed substitutes remain within acceptable limits for standard 5V or 10V gate drive circuits.
Q: Why do some substitute parts have lower gate charge (Qg) than the AOD516?
A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge (such as NTD4965NT4G at 17.2 nC) indicates faster switching speed and lower gate drive power requirements. This can improve efficiency in high-frequency switching applications. The AOD516's 33 nC gate charge is moderate; lower values provide performance advantages without requiring circuit modifications.
Q: Is the NVD4C05NT4G suitable for automotive applications?
A: Yes. The NVD4C05NT4G carries AEC-Q101 qualification, indicating it meets automotive industry reliability and performance standards. This qualification is not listed for the original AOD516, making the NVD4C05NT4G suitable for automotive designs requiring qualified components.
Q: What thermal considerations apply when selecting a substitute?
A: Power dissipation ratings (Ta and Tc) determine thermal management requirements. The AOD516 dissipates 2.5W at Ta and 50W at Tc. Substitute parts with higher power dissipation ratings (such as FDD8870 at 160W Tc) provide greater thermal margin but may require enhanced heatsinking. Lower on-resistance values reduce power dissipation in high-current applications. Thermal design should account for the specific application's current profile and ambient temperature conditions.
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