AOD423 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AOD423 is a P-Channel enhancement-mode MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current capabilities of 15A at Ta and 70A at Tc in a surface-mount TO-252 (DPAK) package. This device is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product portfolio. Identifying equivalent and substitute parts is necessary for ongoing production support, maintenance applications, and component sourcing when original inventory becomes unavailable.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C	15A (Ta), 70A (Tc)	A
On-Resistance (Rds On Max)	6.2 mOhm @ 20A, 20V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	3.5	V @ 250µA
Power Dissipation (Max)	2.5W (Ta), 90W (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252 (DPAK)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the AOD423 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss): 30V minimum
Package Type: TO-252 (DPAK) surface mount
Mounting Type: Surface Mount
RoHS Compliance: ROHS3 Compliant

Performance Compatibility Criteria:

Continuous Drain Current: Must support minimum 15A @ Ta or equivalent thermal performance
On-Resistance (Rds On): Lower or equivalent values indicate improved performance
Gate Threshold Voltage: Must be compatible with existing gate drive circuitry
Operating Temperature Range: Must encompass or exceed -55°C to 175°C
Power Dissipation: Must support thermal requirements of the application

The substitute parts listed below meet all mandatory matching criteria and provide equivalent or superior electrical performance within the specified parameter ranges.

Parameter Comparison

Parameter	AOD423	AOD21357	PJD100P03_L2_00001	Unit
Manufacturer	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Panjit International Inc.	—
FET Type	P-Channel	P-Channel	P-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Vdss	30	30	30	V
Continuous Drain Current @ 25°C (Tc)	70	70	100	A
Rds On (Max) @ 20A	6.2 mOhm @ 20V	8 mOhm @ 10V	4.5 mOhm @ 10V	mOhm
Vgs(th) (Max) @ 250µA	3.5	2.3	2.5	V
Gate Charge (Qg) @ 10V	65	70	107	nC
Input Capacitance (Ciss) @ 15V	2760	2830	6067	pF
Power Dissipation (Max) @ Tc	90	78	104	W
Operating Temperature Range	-55 to 175	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-252 (DPAK)	TO-252 (DPAK)	TO-252 (DPAK)	—
Product Status	Not For New Designs	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

AOD21357 (Alpha & Omega Semiconductor Inc.)

The AOD21357 is an active-status P-Channel MOSFET from the same manufacturer as the AOD423. It maintains identical voltage and current ratings (30V, 70A @ Tc) with equivalent package configuration. The AOD21357 exhibits slightly higher on-resistance (8 mOhm vs. 6.2 mOhm) and lower gate threshold voltage (2.3V vs. 3.5V), resulting in faster switching characteristics. The maximum operating temperature is reduced to 150°C compared to the AOD423's 175°C. This substitute is suitable for applications where the lower temperature rating does not constrain thermal performance. The active product status ensures ongoing availability and manufacturing support.

PJD100P03_L2_00001 (Panjit International Inc.)

The PJD100P03_L2_00001 is an active-status P-Channel MOSFET from Panjit International Inc. with identical voltage rating (30V) and superior continuous drain current capability (100A @ Tc vs. 70A @ Tc). This device demonstrates lower on-resistance (4.5 mOhm vs. 6.2 mOhm), indicating improved efficiency and reduced power dissipation in switching applications. The higher input capacitance (6067 pF vs. 2760 pF) and gate charge (107 nC vs. 65 nC) require consideration in gate drive circuit design. The maximum operating temperature is 150°C. This substitute provides enhanced current handling and thermal performance, suitable for applications requiring higher current capacity or improved efficiency. The active product status ensures long-term supply chain stability.

Both substitute parts maintain full compliance with RoHS3 and REACH requirements, matching the environmental and regulatory status of the original AOD423 device.

Frequently Asked Questions (FAQ)

Q: Can the AOD21357 be used as a direct replacement for the AOD423?

A: The AOD21357 is electrically compatible as a substitute. Both devices share identical voltage (30V) and current (70A @ Tc) ratings, on-resistance characteristics, and TO-252 (DPAK) package configuration. The primary difference is the reduced maximum operating temperature (150°C vs. 175°C). Direct substitution is valid for applications where the thermal operating range does not exceed 150°C.

Q: What are the advantages of using the PJD100P03_L2_00001 over the AOD423?

A: The PJD100P03_L2_00001 offers superior continuous drain current (100A @ Tc vs. 70A @ Tc) and lower on-resistance (4.5 mOhm vs. 6.2 mOhm), resulting in reduced power dissipation and improved thermal efficiency. These characteristics make it suitable for high-current applications or designs requiring enhanced performance margins. The trade-off is higher input capacitance and gate charge, which may require gate drive circuit optimization.

Q: Are there any gate drive circuit considerations when substituting these parts?

A: The AOD21357 has a lower gate threshold voltage (2.3V vs. 3.5V), which may require gate drive voltage adjustment for optimal switching performance. The PJD100P03_L2_00001 has significantly higher gate charge (107 nC vs. 65 nC) and input capacitance (6067 pF vs. 2760 pF), necessitating verification that the gate drive circuit can supply adequate current and voltage to achieve desired switching speed and efficiency.

Q: Do all substitute parts maintain the same package footprint?

A: Yes. The AOD423, AOD21357, and PJD100P03_L2_00001 all use the TO-252 (DPAK) surface-mount package with identical pin configuration and PCB footprint. Physical substitution on existing circuit boards is feasible without layout modifications.

Q: What is the significance of the "Not For New Designs" status of the AOD423?

A: This designation indicates that Alpha & Omega Semiconductor Inc. has discontinued active development and promotion of the AOD423 in favor of newer alternatives. The AOD21357 represents the manufacturer's recommended successor. For new product development, the active-status substitutes (AOD21357 or PJD100P03_L2_00001) are preferred to ensure long-term supply chain stability and access to manufacturing support.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The AOD423, AOD21357, and PJD100P03_L2_00001 are all ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). All parts are REACH unaffected and classified under ECCN EAR99, maintaining identical regulatory and environmental compliance status.

Q: Which substitute should be selected for maximum thermal performance?

A: The PJD100P03_L2_00001 provides the highest power dissipation capability (104W @ Tc vs. 90W @ Tc for AOD423 and 78W @ Tc for AOD21357), combined with the lowest on-resistance. This combination results in superior thermal efficiency and is recommended for applications with stringent thermal requirements or high-frequency switching operations.

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