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AOD418G N-Channel MOSFET 30V 13.5A/36A TO-252 Equivalent & Substitute Parts
Part Overview
The AOD418G is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 13.5A (Ta) and 36A (Tc). The device is housed in a Surface Mount TO-252 (DPAK) package and is classified as Active product status with ROHS3 compliance. This component is suitable for switching and amplification applications requiring moderate current handling in compact form factors. Equivalent and substitute parts are identified based on matching electrical specifications and mechanical compatibility within the TO-252 package family.
Substiute Parts
Key Parameters
| Parameter | AOD418G | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Ta) | 13.5 | A |
| Continuous Drain Current @ 25°C (Tc) | 36 | A |
| Rds On (Max) @ 20A, 10V | 7.5 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2.5 | V |
| Gate Charge (Qg) @ 10V | 24 | nC |
| Input Capacitance (Ciss) @ 15V | 1380 | pF |
| Power Dissipation (Ta) | 2.5 | W |
| Power Dissipation (Tc) | 50 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-252 (DPAK) | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitute parts for the AOD418G are selected based on the following critical parameters that determine functional equivalence:
Electrical Matching Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
- Package Type: Must be TO-252 (DPAK) or compatible variant
- FET Type: N-Channel MOSFET technology
- Gate Voltage Range (Vgs Max): ±20V compatibility
- Operating Temperature Range: Must support -55°C to 175°C or equivalent industrial range
Substitution Logic: Substitute parts are grouped by their ability to handle the AOD418G's electrical load requirements while maintaining mechanical compatibility. Parts with higher continuous drain current ratings (Tc) and lower on-resistance (Rds On) values provide enhanced performance margins. All substitute candidates maintain the same 30V Vdss rating and TO-252 package footprint, ensuring direct pin-compatible replacement without circuit board redesign.
Parameter Comparison
| Parameter | AOD418G (Alpha & Omega) | DMN3009SK3-13 (Diodes Inc.) | IPD50N03S2L06ATMA1 (Infineon) | SUD50N03-06AP-E3 (Vishay) | Unit |
|---|---|---|---|---|---|
| Manufacturer | Alpha & Omega Semiconductor Inc. | Diodes Incorporated | Infineon Technologies | Vishay Siliconix | — |
| Drain-to-Source Voltage (Vdss) | 30 | 30 | 30 | 30 | V |
| Continuous Drain Current (Tc) | 36 | 80 | 50 | 90 | A |
| Rds On (Max) @ 10V | 7.5 @ 20A | 5.5 @ 30A | 6.4 @ 50A | 5.7 @ 20A | mOhm |
| Gate Threshold Voltage (Vgs(th)) | 2.5 @ 250µA | 2.5 @ 250µA | 2.0 @ 85µA | 2.4 @ 250µA | V |
| Gate Charge (Qg) @ 10V | 24 | 42 | 68 | 95 | nC |
| Input Capacitance (Ciss) @ 15V | 1380 | 2000 | 1900 | 3800 | pF |
| Power Dissipation (Tc) | 50 | — | 136 | 83 | W |
| Operating Temperature Range | -55 to 175 | -55 to 150 | -55 to 175 | -55 to 175 | °C |
| Package Type | TO-252 (DPAK) | TO-252 (DPAK) | PG-TO252-3-11 | TO-252AA | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | — |
Engineering Selection Recommendations
DMN3009SK3-13 (Diodes Incorporated): This substitute provides 80A continuous drain current capability with 5.5mOhm on-resistance, representing a performance upgrade over the AOD418G. The device maintains 30V Vdss rating and TO-252 package compatibility. Operating temperature range extends to -55°C to 150°C, which covers standard industrial applications but does not reach the upper 175°C limit of the AOD418G. ROHS3 compliance and MSL 1 rating ensure environmental and moisture compatibility. This part is suitable for applications where higher current capacity is beneficial and maximum temperature operation does not exceed 150°C.
IPD50N03S2L06ATMA1 (Infineon Technologies): This OptiMOS™ series device delivers 50A continuous drain current with 6.4mOhm on-resistance and maintains full -55°C to 175°C operating range. The part carries AEC-Q101 automotive qualification, indicating enhanced reliability for demanding environments. PG-TO252-3-11 package variant maintains mechanical compatibility with standard TO-252 footprints. Power dissipation capability reaches 136W (Tc), providing substantial thermal headroom. ROHS3 compliance and MSL 1 rating are confirmed. This part is recommended for applications requiring automotive-grade reliability and full temperature range operation.
SUD50N03-06AP-E3 (Vishay Siliconix): This TrenchFET® series device provides 90A continuous drain current with 5.7mOhm on-resistance and supports the full -55°C to 175°C operating temperature range. Power dissipation reaches 83W (Tc), offering enhanced thermal performance. TO-252AA package maintains mechanical compatibility. Gate charge of 95nC and input capacitance of 3800pF are higher than the AOD418G, which may impact switching speed in high-frequency applications. ROHS3 compliance and MSL 1 rating are confirmed. This part is suitable for high-current applications where thermal performance and current capacity are prioritized.
All substitute parts maintain ROHS3 compliance, MSL 1 moisture sensitivity rating, and EAR99 export classification consistent with the AOD418G.
Frequently Asked Questions (FAQ)
Q: Can the DMN3009SK3-13 replace the AOD418G in all applications?
A: The DMN3009SK3-13 provides superior current handling (80A vs. 36A) and lower on-resistance (5.5mOhm vs. 7.5mOhm), making it a direct electrical upgrade. However, the operating temperature range extends only to 150°C compared to the AOD418G's 175°C maximum. Substitution is valid for applications where junction temperature does not exceed 150°C.
Q: What is the difference between the IPD50N03S2L06ATMA1 and other substitutes?
A: The IPD50N03S2L06ATMA1 carries AEC-Q101 automotive qualification and maintains the full -55°C to 175°C operating range. This makes it the preferred choice for automotive and high-reliability applications. The higher gate charge (68nC) may require adjusted gate drive circuitry in high-frequency switching applications.
Q: Are all substitute parts pin-compatible with the AOD418G?
A: All substitute parts use TO-252 (DPAK) package variants with identical pin configurations (2 Leads + Tab). The DMN3009SK3-13, IPD50N03S2L06ATMA1, and SUD50N03-06AP-E3 are mechanically and electrically pin-compatible with the AOD418G without circuit board modifications.
Q: How do gate charge differences affect circuit design?
A: The AOD418G has 24nC gate charge, while substitutes range from 42nC to 95nC. Higher gate charge requires longer switching times and increased gate drive current. Applications using fixed gate drive circuits may experience slower switching transitions with higher gate charge devices. Verify gate driver capability before substitution in high-frequency switching applications.
Q: Which substitute offers the best thermal performance?
A: The IPD50N03S2L06ATMA1 provides the highest power dissipation rating at 136W (Tc), followed by the SUD50N03-06AP-E3 at 83W (Tc). Both devices offer superior thermal performance compared to the AOD418G's 50W (Tc) rating, allowing operation at higher power levels or reduced heatsink requirements.
Q: Are all substitutes RoHS3 compliant?
A: Yes, all substitute parts (DMN3009SK3-13, IPD50N03S2L06ATMA1, and SUD50N03-06AP-E3) carry ROHS3 compliance certification, matching the AOD418G's environmental compliance status.
Q: What is the significance of MSL 1 rating?
A: MSL 1 (Moisture Sensitivity Level 1) indicates unlimited shelf life without moisture baking requirements. All parts in this comparison, including the AOD418G and all substitutes, carry MSL 1 rating, ensuring consistent handling and storage procedures across all options.
Q: Can the SUD50N03-06AP-E3 be used in high-frequency switching applications?
A: The SUD50N03-06AP-E3 has higher input capacitance (3800pF) and gate charge (95nC) compared to the AOD418G (1380pF and 24nC). In high-frequency applications above 100kHz, the increased capacitance and gate charge may increase switching losses and require higher gate drive current. Thermal analysis is recommended before substitution in high-frequency designs.
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