AOD2HC60 N-Channel 600V 2.5A MOSFET Equivalent & Substitute Parts

Part Overview

The AOD2HC60 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 600V drain-to-source voltage with 2.5A continuous drain current at 25°C. The device is housed in a TO-252 (DPAK) surface mount package and is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across voltage ratings, current handling, gate drive characteristics, and thermal performance while conforming to the same surface mount package footprint.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	2.5	A (Tc)
On-State Resistance (Rds On) @ Id, Vgs	2	Ohm @ 800mA, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 250µA
Gate Charge (Qg) @ Vgs	10	nC @ 10V
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) @ Vds	466	pF @ 100V
Power Dissipation (Max)	74	W (Tc)
Operating Temperature Range	-50 to 150	°C (TJ)
Package Type	TO-252 (DPAK)	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the AOD2HC60 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 2.5A at 25°C
Gate Drive Voltage: Must support 10V drive voltage with compatible Rds On characteristics
Package Type: Must be TO-252 (DPAK) surface mount configuration
Gate Threshold Voltage (Vgs(th)): Must be compatible with standard gate drive circuits (typically 4V to 5V range)
Maximum Gate Voltage (Vgs): Must support ±30V or greater
Operating Temperature: Must support -50°C to 150°C range or equivalent

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching; values up to 26 nC are acceptable
Input Capacitance (Ciss): Values between 122 pF and 670 pF are acceptable for this application class
Power Dissipation: Must support minimum 74W thermal capability
RoHS and REACH Compliance: All substitutes must maintain ROHS3 compliance

Substitute parts are grouped into two categories: direct replacements (matching or exceeding all primary parameters) and functional equivalents (meeting application requirements with minor parameter variations).

Parameter Comparison

Parameter	AOD2HC60	FDD5N60NZTM	FQD5N60CTM	IXTY2N65X2	STD3N62K3	STD4N62K3	STD4NK60ZT4	STD4LN80K5	TK4P60DA	TK4P60DB
Vdss (V)	600	600	600	650	620	620	600	800	600	600
Id @ 25°C (A)	2.5	4	2.8	2	2.7	3.8	4	3	3.5	3.7
Rds On (Ohm)	2	2	2.5	2.3	2.5	1.95	2	2.6	2.2	2
Vgs(th) (V)	5	5	4	5	4.5	4.5	4.5	5	4.4	4.4
Qg (nC)	10	13	19	4.3	13	14	26	3.7	11	11
Vgs Max (V)	±30	±25	±30	±30	±30	±30	±30	±30	±30	±30
Ciss (pF)	466	600	670	180	385	450	510	122	490	540
Power Dissipation (W)	74	83	49	55	45	70	70	60	80	80
Operating Temp (°C)	-50 to 150	-55 to 150	-55 to 150	-55 to 150	150	150	150	-55 to 150	150	150
Package	TO-252 (DPAK)	TO-252AA (DPAK)	TO-252AA (DPAK)	TO-252AA (DPAK)	DPAK	DPAK	DPAK	DPAK	DPAK	DPAK
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	RoHS	RoHS
Product Status	Obsolete	Active	Active	Active	Active	Active	Not For New Designs	Active	Active	Active

Engineering Selection Recommendations

Tier 1 - Direct Replacements (Recommended for New Designs):

FDD5N60NZTM (onsemi) is the primary recommended substitute. This device exceeds the AOD2HC60 specifications with 4A continuous drain current versus 2.5A, matching the 600V voltage rating and 2Ohm Rds On. The part is manufactured by onsemi under the active UniFET-II™ series with ROHS3 compliance. Higher current capability provides design margin for thermal and electrical performance. Inventory availability is substantial at 84,297 pieces.

STD4NK60ZT4 (STMicroelectronics) provides equivalent electrical performance with 4A current rating, 600V voltage, and 2Ohm Rds On. However, this part carries "Not For New Designs" status, limiting its use to legacy production support only. Gate charge is elevated at 26 nC compared to the original 10 nC, affecting switching speed characteristics.

Tier 2 - Functional Equivalents (Application-Dependent Selection):

FQD5N60CTM (onsemi) operates within specification with 2.8A current rating, 600V voltage, and 2.5Ohm Rds On. This part is suitable for applications where current margin is less critical. The QFET® series designation indicates optimized switching characteristics. Gate charge of 19 nC is moderate. Product status is active with ROHS3 compliance.

STD3N62K3 (STMicroelectronics) and STD4N62K3 (STMicroelectronics) both operate at 620V, exceeding the 600V requirement. STD3N62K3 provides 2.7A current with 2.5Ohm Rds On, while STD4N62K3 provides 3.8A current with 1.95Ohm Rds On. Both are SuperMESH3™ series devices with active product status and ROHS3 compliance. The higher voltage rating provides additional design margin for transient overvoltage conditions.

TK4P60DA (Toshiba) and TK4P60DB (Toshiba) are π-MOSVII series devices rated at 600V with 3.5A and 3.7A current respectively. Both provide 80W power dissipation and active product status. RoHS compliance is confirmed. These devices are suitable for applications requiring higher current capability than the original AOD2HC60.

Tier 3 - Higher Voltage Alternatives (Specialized Applications):

IXTY2N65X2 (IXYS) operates at 650V, providing additional voltage margin. Current rating is 2A, below the original 2.5A specification. This device is suitable only for applications where the lower current rating is acceptable and higher voltage margin is required. Ultra X2 series designation indicates advanced switching characteristics with low gate charge of 4.3 nC.

STD4LN80K5 (STMicroelectronics) operates at 800V with 3A current rating. This part is suitable only for applications requiring significantly higher voltage ratings than the original 600V specification. MDmesh™ K5 series provides low gate charge at 3.7 nC and active product status with ROHS3 compliance.

Selection Criteria Summary:

For direct replacement in existing designs: FDD5N60NZTM or FQD5N60CTM
For new designs with enhanced performance: STD4N62K3 or TK4P60DB
For legacy production support only: STD4NK60ZT4
For higher voltage margin applications: STD3N62K3, IXTY2N65X2, or STD4LN80K5

All recommended substitutes maintain TO-252 (DPAK) package compatibility, surface mount configuration, and RoHS compliance with the original AOD2HC60.

Frequently Asked Questions (FAQ)

Q: Can FDD5N60NZTM directly replace AOD2HC60 in existing PCB layouts?

A: Yes. FDD5N60NZTM is housed in TO-252AA (DPAK) package, which is mechanically and electrically compatible with the original TO-252 (DPAK) footprint. Pin configuration and lead spacing are identical. The higher current rating (4A versus 2.5A) and equivalent voltage rating (600V) make this a direct drop-in replacement.

Q: What is the significance of the "Not For New Designs" status on STD4NK60ZT4?

A: This designation indicates that STMicroelectronics has classified this part as suitable only for sustaining existing production and legacy applications. New product designs should not incorporate this part. While electrically functional, the manufacturer recommends transitioning to active-status alternatives such as FDD5N60NZTM or STD4N62K3 for future development.

Q: Why do some substitutes have higher voltage ratings (620V, 650V, 800V) than the original 600V specification?

A: Higher voltage-rated devices provide additional design margin for transient overvoltage conditions and voltage spikes that may occur in switching power supply applications. These devices remain fully functional at 600V operation and offer improved reliability in harsh electrical environments. Selection of higher voltage alternatives depends on application requirements and thermal considerations.

Q: How does gate charge (Qg) affect device selection?

A: Gate charge determines the switching speed and gate drive circuit requirements. Lower gate charge (such as IXTY2N65X2 at 4.3 nC or STD4LN80K5 at 3.7 nC) enables faster switching transitions and reduces gate drive power consumption. Higher gate charge (such as STD4NK60ZT4 at 26 nC) requires more gate drive current but may provide improved noise immunity. Selection depends on the specific gate drive circuit design and switching frequency requirements.

Q: Are all substitute parts RoHS compliant?

A: All recommended substitutes carry either ROHS3 or RoHS compliance certification. FDD5N60NZTM, FQD5N60CTM, STD3N62K3, STD4N62K3, STD4NK60ZT4, and STD4LN80K5 are ROHS3 compliant. TK4P60DA and TK4P60DB carry RoHS compliance. All parts are REACH unaffected and suitable for applications requiring environmental compliance.

Q: What is the difference between Tc (case temperature) and Ta (ambient temperature) current ratings?

A: Tc (case temperature) ratings specify continuous drain current at the device case temperature of 25°C, representing the maximum current the device can sustain under specified thermal conditions. Ta (ambient temperature) ratings specify current at ambient temperature of 25°C. Tc ratings are more conservative and represent actual thermal performance. All substitutes in this comparison use Tc ratings except TK4P60DA and TK4P60DB, which use Ta ratings for current specification.

Q: Can STD4LN80K5 be used in place of AOD2HC60 in a 600V application?

A: Yes, STD4LN80K5 can be used in 600V applications. The device is rated for 800V operation, so 600V operation is well within its safe operating area. However, the higher voltage rating may result in different switching characteristics and thermal performance. Selection should be based on whether the application benefits from the higher voltage margin and the specific gate drive circuit compatibility.

Q: What inventory considerations should guide substitute part selection?

A: FDD5N60NZTM has the highest inventory availability at 84,297 pieces, followed by STD4NK60ZT4 at 50,400 pieces and STD4N62K3 at 15,643 pieces. For applications requiring immediate availability and long-term supply security, FDD5N60NZTM is the optimal choice. For legacy production support, STD4NK60ZT4 provides adequate inventory despite its "Not For New Designs" status.

Q: How do input capacitance (Ciss) values affect circuit performance?

A: Input capacitance affects gate drive circuit design and switching transient behavior. Lower Ciss values (such as STD4LN80K5 at 122 pF) reduce gate drive power requirements and enable faster switching transitions. Higher Ciss values (such as FQD5N60CTM at 670 pF) require more gate drive current but may provide improved EMI characteristics. Selection depends on the specific gate drive circuit topology and switching frequency.

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