AOD210 N-Channel MOSFET 30V 23A/70A TO-252 Equivalent & Substitute Parts

Part Overview

The AOD210 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 23A (Ta) and 70A (Tc) in a surface mount TO-252 (DPAK) package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing production and design requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate drive characteristics, and thermal performance while accommodating available packaging options.

Key Parameters

Parameter	AOD210 Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C	23A (Ta), 70A (Tc)	A
Rds On (Max) @ 20A, 10V	3	mOhm
Vgs(th) (Max) @ 250µA	2.2	V
Gate Charge (Qg) @ 10V	58	nC
Input Capacitance (Ciss) @ 15V	4300	pF
Power Dissipation (Max)	2.7W (Ta), 150W (Tc)	W
Operating Temperature Range	−55 to 175	°C
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the AOD210 is determined by strict equivalence across the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
FET Type: N-Channel topology required
Technology: MOSFET (Metal Oxide) construction
Gate Threshold Voltage (Vgs(th)): Compatibility within ±0.3V of 2.2V specification
Rds On (Max): Must not exceed 3.5 mOhm at rated gate drive voltage to maintain thermal performance
Operating Temperature Range: Must support −55°C to 175°C minimum
Mounting Type: Surface Mount required
Package Compatibility: TO-252 (DPAK) or equivalent footprint (TO-252AA, TO-263 D2PAK)
Moisture Sensitivity: MSL 1 (Unlimited) preferred for supply chain flexibility

Secondary Compatibility Factors:

Continuous drain current at case temperature (Tc): Minimum 70A required for thermal equivalence
Gate charge (Qg): Lower values indicate faster switching; values between 29–116 nC acceptable
Input capacitance (Ciss): Values between 2010–6316 pF acceptable without circuit redesign

Substitute parts listed below satisfy all primary criteria and maintain functional equivalence within the specified electrical and thermal operating envelope.

Parameter Comparison

Parameter	AOD210	AOD508	IPD031N03LGATMA1	IRLR7843TRLPBF	SQD100N03-3M2L_GE3	STB155N3LH6	STD150N3LLH6	Unit
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	30	30	30	30	30	30	30	V
Continuous Drain Current (Tc)	70	70	90	161	100	80	80	A
Rds On (Max) @ 10V	3.0	3.0	3.1	3.3	3.2	3.0	2.8	mOhm
Vgs(th) (Max) @ 250µA	2.2	2.2	2.2	2.3	2.5	2.5	2.5	V
Gate Charge (Qg) @ Vgs	58 @ 10V	49 @ 10V	51 @ 10V	50 @ 4.5V	116 @ 10V	80 @ 5V	29 @ 4.5V	nC
Input Capacitance (Ciss) @ 15V	4300	2010	5300	4380	6316	3800	3700	pF
Power Dissipation (Tc)	150	50	94	140	136	110	110	W
Operating Temperature Range	−55 to 175	−55 to 175	−55 to 175	−55 to 175	−55 to 175	−55 to 175	−55 to 175	°C
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-263-3, D2PAK	TO-252-3, DPAK	—
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	—
Product Status	Obsolete	Not For New Designs	Active	Not For New Designs	Last Time Buy	Active	Obsolete	—
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Primary Recommendation: IPD031N03LGATMA1 (Infineon Technologies)

The IPD031N03LGATMA1 is the preferred substitute for new designs. This device maintains active product status, ensuring long-term availability and supply chain stability. It meets all electrical equivalence criteria with 30V Vdss, 90A continuous drain current at case temperature, and 3.1 mOhm Rds On. The part carries ROHS3 compliance and operates across the full −55°C to 175°C temperature range. The OptiMOS™ series designation indicates advanced process technology. Packaging is TO-252-3 (DPAK), providing direct footprint compatibility with the AOD210.

Secondary Recommendation: STB155N3LH6 (STMicroelectronics)

The STB155N3LH6 is suitable for applications where higher current capacity is not required. This active product offers 80A continuous drain current, 3.0 mOhm Rds On, and ROHS3 compliance. The primary distinction is packaging: this device uses TO-263 (D2PAK) instead of TO-252 (DPAK). PCB layout modification is required for footprint accommodation. The DeepGATE™ and STripFET™ VI series designation indicates mature, proven technology.

Alternative for Existing Inventory: AOD508 (Alpha & Omega Semiconductor Inc.)

The AOD508 provides direct form-factor compatibility in TO-252 (DPAK) packaging and maintains identical electrical specifications (30V, 70A Tc, 3.0 mOhm Rds On). However, this part carries "Not For New Designs" status, limiting its use to legacy production support or inventory transition periods. ROHS3 compliance is confirmed.

Not Recommended for New Designs:

IRLR7843TRLPBF and SQD100N03-3M2L_GE3 carry "Not For New Designs" and "Last Time Buy" status respectively, indicating limited future availability. STD150N3LLH6 is classified as obsolete.

Frequently Asked Questions (FAQ)

Q: Can the AOD210 be directly replaced with any of these substitutes without PCB modification?

A: Direct replacement without PCB modification is possible with AOD508, IPD031N03LGATMA1, IRLR7843TRLPBF, SQD100N03-3M2L_GE3, and STD150N3LLH6, as all use TO-252 (DPAK) packaging with identical pin configuration. STB155N3LH6 uses TO-263 (D2PAK) packaging and requires PCB layout changes.

Q: What is the significance of the difference in gate charge (Qg) between the AOD210 (58 nC) and STD150N3LLH6 (29 nC)?

A: Gate charge determines the energy required to switch the transistor on and off. Lower gate charge (STD150N3LLH6 at 29 nC) results in faster switching speed and reduced driver power consumption. Higher gate charge (SQD100N03-3M2L_GE3 at 116 nC) may require gate driver circuits with higher current capability. Both values are acceptable for the AOD210 application envelope; selection depends on circuit timing and driver specifications.

Q: Why does the AOD210 specification list two current ratings: 23A (Ta) and 70A (Tc)?

A: The 23A rating represents continuous drain current at ambient temperature (Ta = 25°C) with the device mounted on a standard PCB. The 70A rating represents continuous drain current at case temperature (Tc = 25°C), which assumes optimal thermal management with heat sinking. Substitute parts are selected based on the 70A (Tc) specification to ensure thermal equivalence under worst-case operating conditions.

Q: Is the difference in input capacitance (Ciss) between substitute parts significant?

A: Input capacitance ranges from 2010 pF (AOD508) to 6316 pF (SQD100N03-3M2L_GE3). This parameter affects gate drive circuit design and switching transient behavior. Lower capacitance (AOD508) requires less gate charge and reduces driver power dissipation. Higher capacitance (SQD100N03-3M2L_GE3) may increase switching losses in high-frequency applications. Selection should align with existing gate driver circuit specifications.

Q: What does "ROHS3 Compliant" mean, and why is it important?

A: ROHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the device contains no lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers. This certification is mandatory for products sold in the European Union and increasingly required by global supply chain standards. All recommended substitutes carry ROHS3 compliance except where not specified.

Q: Can I use IRLR7843TRLPBF as a substitute despite its "Not For New Designs" status?

A: IRLR7843TRLPBF meets all electrical equivalence criteria and maintains TO-252 (DPAK) packaging compatibility. However, "Not For New Designs" status indicates the manufacturer is discontinuing this product line. Use is restricted to legacy production support or existing inventory management. For new designs, IPD031N03LGATMA1 or STB155N3LH6 are preferred.

Q: What is the difference between the AOD210 and AOD508 if they have identical electrical specifications?

A: Both devices share 30V Vdss, 70A (Tc) continuous drain current, and 3.0 mOhm Rds On specifications. The primary differences are gate charge (AOD210: 58 nC vs. AOD508: 49 nC) and input capacitance (AOD210: 4300 pF vs. AOD508: 2010 pF). These differences reflect process improvements in the AOD508 generation. The AOD508 is classified "Not For New Designs," while the AOD210 is obsolete, making both unsuitable for new production.

Q: Are there any thermal performance differences between TO-252 (DPAK) and TO-263 (D2PAK) packages?

A: TO-263 (D2PAK) provides superior thermal performance compared to TO-252 (DPAK) due to larger copper pad area and improved heat dissipation path. STB155N3LH6 in TO-263 packaging can handle higher power dissipation with lower junction temperature rise. If thermal management is critical, TO-263 packaging offers advantages, but PCB redesign is required.

Q: Which substitute part offers the best long-term availability?

A: IPD031N03LGATMA1 carries "Active" product status from Infineon Technologies, indicating ongoing production and long-term availability commitment. This part is the recommended choice for new designs requiring supply chain stability beyond the typical product lifecycle.

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