AOC2415 Equivalent & Substitute Parts

Part Overview

The AOC2415 is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 20V drain-to-source voltage with 3.5A continuous drain current at 25°C. The device is housed in a 4-AlphaDFN surface mount package and is designed for applications requiring low on-resistance switching performance in compact form factors.

The AOC2415 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for systems utilizing this component.

Substiute Parts

AOC2415
Alpha & Omega Semiconductor Inc.In Stock: 851AOC2415 Datasheet
AOC2415
Current Part
PMCM6501UPEZ
Nexperia USA Inc.In Stock: 16254PMCM6501UPEZ Datasheet
PMCM6501UPEZ
MFR Recommended
SI8401DB-T1-E1
Vishay SiliconixIn Stock: 105353SI8401DB-T1-E1 Datasheet
SI8401DB-T1-E1
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.5 A
Rds On (Max) @ Id, Vgs 33 mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5V
Power Dissipation (Max) 550 mW
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package Type 4-AlphaDFN (1.57x1.57)
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the AOC2415 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • FET Type: P-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): Minimum 20V rating required
  • Continuous Drain Current (Id): Minimum 3.5A at 25°C required
  • On-Resistance (Rds On): Lower or equivalent values acceptable
  • Gate Charge (Qg): Lower values acceptable; higher values require circuit evaluation
  • Power Dissipation: Minimum 550mW rating required
  • Gate Voltage (Vgs): Maximum ±8V or greater acceptable
  • Operating Temperature: -55°C to 150°C range required

Mechanical Compatibility Criteria:

  • Mounting Type: Surface Mount required
  • Moisture Sensitivity Level: MSL 1 or equivalent acceptable
  • Package footprint: Physical dimensions must accommodate PCB layout constraints

The substitute parts listed below satisfy the electrical requirements for direct functional replacement while maintaining compliance with environmental and regulatory standards.

Parameter Comparison

Parameter AOC2415 SI8401DB-T1-E1 PMCM6501UPEZ
Manufacturer Alpha & Omega Semiconductor Inc. Vishay Siliconix Nexperia USA Inc.
FET Type P-Channel P-Channel P-Channel
Vdss (V) 20 20 20
Id @ 25°C (A) 3.5 3.6 7.3
Rds On (Max) (mOhm) 33 @ 1.5A, 4.5V 65 @ 1A, 4.5V Not specified
Gate Charge Qg (nC) 28 @ 4.5V 17 @ 4.5V 19.1 @ 4.5V
Vgs (Max) (V) ±8 ±12 ±8
Power Dissipation (Max) (mW) 550 1470 556
Operating Temperature (°C) -55 to 150 -55 to 150 Up to 150
Package Type 4-AlphaDFN (1.57x1.57) 4-Microfoot 6-WLCSP (1.48x0.98)
Product Status Obsolete Active Obsolete
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

SI8401DB-T1-E1 (Vishay Siliconix)

The SI8401DB-T1-E1 is classified as an active product with ROHS3 compliance and represents the primary substitute for the obsolete AOC2415. This device meets all electrical requirements with equivalent drain current (3.6A vs. 3.5A) and identical voltage ratings. The SI8401DB-T1-E1 features lower gate charge (17 nC vs. 28 nC), resulting in faster switching characteristics. Higher power dissipation capability (1.47W vs. 550mW) provides additional thermal margin. The 4-Microfoot package differs from the 4-AlphaDFN, requiring PCB layout modification. Extended gate voltage rating (±12V vs. ±8V) offers greater design flexibility. Active product status ensures long-term availability and supply chain stability.

PMCM6501UPEZ (Nexperia USA Inc.)

The PMCM6501UPEZ is classified as obsolete and serves as a secondary substitute option. This device exceeds electrical requirements with significantly higher drain current (7.3A vs. 3.5A) and equivalent voltage ratings. Gate charge is lower (19.1 nC vs. 28 nC), enabling faster switching. Power dissipation capability is marginally higher (556mW vs. 550mW). The 6-WLCSP package differs substantially from the 4-AlphaDFN, requiring significant PCB redesign. ROHS3 compliance is confirmed. Obsolete product status may limit future availability.

Selection Basis:

For applications requiring immediate substitution with assured long-term supply, the SI8401DB-T1-E1 is the recommended choice due to active product status and ROHS3 compliance. The PMCM6501UPEZ is suitable for applications where higher current capability and lower gate charge provide design advantages, provided PCB layout modifications are acceptable and inventory availability is confirmed.

Frequently Asked Questions (FAQ)

Q: Can the SI8401DB-T1-E1 be used as a direct pin-for-pin replacement for the AOC2415?

A: No. While both devices are P-Channel MOSFETs with identical voltage ratings and comparable current ratings, the SI8401DB-T1-E1 uses a 4-Microfoot package whereas the AOC2415 uses a 4-AlphaDFN package. Physical dimensions and pin configurations differ, requiring PCB layout modification. Electrical functionality is compatible.

Q: What are the key electrical differences between the AOC2415 and SI8401DB-T1-E1?

A: The SI8401DB-T1-E1 has lower gate charge (17 nC vs. 28 nC), resulting in faster switching speed. On-resistance is higher (65 mOhm vs. 33 mOhm), which may increase conduction losses in high-current applications. Power dissipation capability is significantly higher (1.47W vs. 550mW). Gate voltage rating is extended (±12V vs. ±8V).

Q: Is the PMCM6501UPEZ suitable for high-current applications?

A: Yes. The PMCM6501UPEZ is rated for 7.3A continuous drain current, exceeding the AOC2415 specification of 3.5A. This device is suitable for applications requiring higher current handling. However, the 6-WLCSP package requires substantial PCB redesign compared to the original 4-AlphaDFN footprint.

Q: What is the impact of different package types on circuit design?

A: Package differences affect PCB layout, thermal management, and assembly processes. The 4-AlphaDFN (1.57x1.57mm) is smaller than the 4-Microfoot and 6-WLCSP packages. Thermal performance varies by package type; larger packages generally offer better heat dissipation. Assembly equipment compatibility must be verified for each package type.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both the SI8401DB-T1-E1 and PMCM6501UPEZ are ROHS3 compliant. The original AOC2415 RoHS status is not specified in available documentation.

Q: What is the significance of product status (Active vs. Obsolete)?

A: Active products have confirmed long-term availability and ongoing manufacturer support. Obsolete products have limited or no future availability. The SI8401DB-T1-E1 is active, ensuring supply chain continuity. The PMCM6501UPEZ is obsolete, requiring inventory verification before selection.

Q: Can gate charge differences affect circuit performance?

A: Yes. Lower gate charge enables faster switching transitions, reducing switching losses and improving efficiency in high-frequency applications. The SI8401DB-T1-E1 (17 nC) and PMCM6501UPEZ (19.1 nC) both have lower gate charge than the AOC2415 (28 nC), resulting in improved switching performance. Gate driver circuits must be verified for compatibility with lower charge requirements.

Q: What moisture sensitivity level applies to these devices?

A: All three devices are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage procedures are applicable.

Request Quote (Ships tomorrow)