AOB480L N-Channel 80V 15A/180A MOSFET Equivalent & Substitute Parts

Part Overview

The AOB480L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 80V drain-to-source voltage with continuous drain current of 15A at Ta (ambient temperature) and 180A at Tc (case temperature). The device is housed in a TO-263 (D2PAK) surface mount package and belongs to the SDMOS™ series. This part is classified as obsolete, making identification of active equivalent and substitute components necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	80	V
Continuous Drain Current @ 25°C (Tc)	180	A
Continuous Drain Current @ 25°C (Ta)	15	A
On-Resistance (Rds On) @ 20A, 10V	4.2	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	140	nC
Input Capacitance (Ciss) @ 40V	7820	pF
Power Dissipation (Tc)	333	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the AOB480L is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 80V
Package Type: TO-263-3 (D2PAK) or equivalent mechanical footprint
Mounting Type: Surface Mount
Operating Temperature Range: Must support -55°C to 175°C
Continuous Drain Current (Tc): Minimum 120A to maintain performance margin above the 180A case temperature rating

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Typically 2.1V to 4.5V for logic-level compatibility
On-Resistance (Rds On): Lower values indicate improved efficiency; range 3.5mOhm to 5.1mOhm acceptable
Gate Charge (Qg): Lower values reduce switching losses; range 53nC to 210nC acceptable
Input Capacitance (Ciss): Affects gate drive requirements; range 3770pF to 17130pF acceptable

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with active product status) and Compatible Alternatives (meeting electrical requirements with minor parameter variations).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Package	Status
AOB480L	Alpha & Omega Semiconductor	80	180	4.2	4.0	140	TO-263-3	Obsolete
PSMN3R3-80BS,118	Nexperia USA Inc.	80	120	3.5	4.0	111	D2PAK	Active
BUK764R2-80E,118	Nexperia USA Inc.	80	120	4.2	4.0	136	D2PAK	Active
BUK964R2-80E,118	Nexperia USA Inc.	80	120	4.0	2.1	123	D2PAK	Active
BUK763R8-80E,118	Nexperia USA Inc.	80	120	3.8	4.0	169	D2PAK	Active
IPB049N08N5ATMA1	Infineon Technologies	80	80	4.9	3.8	53	TO-263-3	Active
FDB047N10	onsemi	100	120	4.7	4.5	210	TO-263	Active
PSMN4R4-80BS,118	Nexperia USA Inc.	80	100	4.5	4.0	125	D2PAK	Active
PSMN5R0-80BS,118	Nexperia USA Inc.	80	100	5.1	4.0	101	D2PAK	Active
STH130N8F7-2	STMicroelectronics	80	110	5.0	4.5	60	H2PAK-2	Active
STH140N8F7-2	STMicroelectronics	80	90	4.0	4.5	96	H2PAK-2	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

The following parts are recommended as primary substitutes for the obsolete AOB480L:

PSMN3R3-80BS,118 (Nexperia USA Inc.) — Active product status with RoHS3 compliance and AEC-Q101 automotive qualification. Matches 80V Vdss and D2PAK package. Continuous drain current of 120A at Tc provides adequate performance margin. On-resistance of 3.5mOhm is superior to the original part, reducing conduction losses. Gate charge of 111nC is lower, improving switching efficiency.
BUK764R2-80E,118 (Nexperia USA Inc.) — Active product with RoHS3 compliance and AEC-Q101 automotive qualification. Identical 80V Vdss and D2PAK package. On-resistance of 4.2mOhm matches the original specification. Gate charge of 136nC is comparable to the AOB480L. Suitable for applications requiring matched electrical characteristics.
BUK964R2-80E,118 (Nexperia USA Inc.) — Active product with RoHS3 compliance and AEC-Q101 automotive qualification. Offers lower gate threshold voltage of 2.1V, enabling enhanced logic-level gate drive compatibility. On-resistance of 4.0mOhm and gate charge of 123nC provide balanced performance. Vgs(Max) of ±10V requires verification against existing gate drive circuits.

Secondary Substitutes (Application-Dependent Selection):

BUK763R8-80E,118 (Nexperia USA Inc.) — Active product with automotive qualification. Lowest on-resistance at 3.8mOhm among 80V alternatives, optimizing efficiency in high-current applications. Higher gate charge of 169nC requires consideration in switching-speed-critical designs.
IPB049N08N5ATMA1 (Infineon Technologies OptiMOS™) — Active product with RoHS3 compliance. Continuous drain current of 80A is lower than the original 180A case temperature rating; suitable only for applications with reduced current requirements. Exceptionally low gate charge of 53nC and input capacitance of 3770pF minimize switching losses. TO-263-3 package maintains mechanical compatibility.

Voltage-Rated Alternative:

FDB047N10 (onsemi PowerTrench®) — Active product with RoHS3 compliance. Rated for 100V Vdss, providing additional voltage margin. Continuous drain current of 120A at Tc meets performance requirements. Higher gate charge of 210nC and input capacitance of 15265pF require gate drive circuit verification. Suitable for applications where higher voltage rating provides system-level benefits.

Package Variant Alternatives:

STH130N8F7-2 (STMicroelectronics STripFET™ F7) — Active product with RoHS3 compliance. Continuous drain current of 110A at Tc. H2PAK-2 package differs from D2PAK; PCB layout modification required. Gate charge of 60nC is exceptionally low, reducing switching losses.
STH140N8F7-2 (STMicroelectronics DeepGATE™/STripFET™ VII) — Active product with RoHS3 compliance. Continuous drain current of 90A at Tc. H2PAK-2 package requires PCB redesign. On-resistance of 4.0mOhm and gate charge of 96nC provide efficient switching characteristics.

Lower Current Alternatives:

PSMN4R4-80BS,118 and PSMN5R0-80BS,118 (Nexperia USA Inc.) — Active products with RoHS3 compliance. Continuous drain currents of 100A at Tc are lower than the original 180A rating. Suitable for applications with reduced current demands. On-resistance values of 4.5mOhm and 5.1mOhm respectively are acceptable for moderate-power designs.

All recommended substitutes maintain the -55°C to 175°C operating temperature range and are classified as REACH Unaffected with EAR99 ECCN designation, matching the original part's regulatory status.

Frequently Asked Questions (FAQ)

Q1: Can I use a substitute part with lower continuous drain current than the AOB480L's 180A case temperature rating?

A: Substitution with lower current ratings is permissible only if the application's actual current requirements are verified to be below the substitute part's continuous drain current specification. The AOB480L's 180A Tc rating represents the maximum case temperature condition. If your circuit operates at 120A or less, parts such as PSMN3R3-80BS,118 (120A Tc) or IPB049N08N5ATMA1 (80A Tc) are suitable. Verify actual circuit current draw before selection.

Q2: What is the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: Ta (ambient temperature) current rating assumes operation in free air at 25°C without thermal management. Tc (case temperature) rating assumes the device case is maintained at 25°C through active cooling or thermal interface materials. The AOB480L specifies 15A at Ta and 180A at Tc. Substitute parts typically list only Tc ratings. Select substitutes based on your thermal management approach: if using thermal interface materials or heat sinks, use Tc ratings; if relying on PCB thermal dissipation alone, derate to Ta equivalent conditions.

Q3: Are D2PAK and H2PAK-2 packages mechanically interchangeable?

A: D2PAK (TO-263-3) and H2PAK-2 are not mechanically interchangeable. Both are surface mount packages with similar lead configurations but different mechanical dimensions and thermal characteristics. Substituting STH130N8F7-2 or STH140N8F7-2 (H2PAK-2 package) for the AOB480L (D2PAK package) requires PCB layout modification. Verify footprint compatibility with your PCB design before committing to H2PAK-2 alternatives.

Q4: How do on-resistance (Rds On) differences affect circuit performance?

A: On-resistance determines conduction losses in the MOSFET. Lower Rds On values reduce power dissipation and heat generation. The AOB480L specifies 4.2mOhm at 20A, 10V. Substitutes range from 3.5mOhm (PSMN3R3-80BS,118) to 5.1mOhm (PSMN5R0-80BS,118). In high-current applications, selecting a part with lower Rds On (such as PSMN3R3-80BS,118 at 3.5mOhm) reduces thermal load and improves efficiency. In low-current applications, Rds On differences have minimal impact on overall circuit performance.

Q5: What is gate charge (Qg) and why does it matter for substitution?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Higher gate charge increases switching time and requires more gate drive current. The AOB480L specifies 140nC at 10V. Substitutes range from 53nC (IPB049N08N5ATMA1) to 210nC (FDB047N10). If your gate drive circuit has limited current capacity, select a substitute with lower gate charge to ensure reliable switching. Conversely, if gate drive current is not a constraint, higher gate charge values are acceptable.

Q6: Can I substitute a 100V-rated MOSFET (such as FDB047N10) for the 80V AOB480L?

A: Yes, a 100V-rated MOSFET is a valid substitute for an 80V application. The higher voltage rating provides additional safety margin and does not degrade performance in an 80V circuit. FDB047N10 (100V, 120A Tc) is suitable for the AOB480L replacement. However, verify that the higher voltage rating does not introduce unintended consequences in your specific circuit topology, such as increased parasitic capacitance affecting switching speed.

Q7: What does RoHS3 compliance mean for my design?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the part does not contain restricted substances such as lead, cadmium, or mercury. All recommended substitutes are RoHS3 compliant, matching the regulatory requirements of modern electronics manufacturing. If your design requires RoHS compliance for end-market distribution, all listed substitutes are acceptable.

Q8: Why do some substitutes have different gate threshold voltages (Vgs(th))?

A: Gate threshold voltage determines the minimum gate-to-source voltage required to turn the MOSFET on. The AOB480L specifies 4.0V at 250µA. BUK964R2-80E,118 specifies 2.1V, enabling lower gate drive voltage operation. If your gate drive circuit operates at lower voltages (such as 3.3V logic), BUK964R2-80E,118 provides better compatibility. Conversely, if your circuit uses standard 5V or 10V gate drive, the standard 4.0V threshold is appropriate. Verify gate drive voltage compatibility before selection.

Q9: What is the significance of AEC-Q101 automotive qualification?

A: AEC-Q101 is an automotive industry qualification standard ensuring the part meets reliability and performance requirements for automotive applications. Most recommended substitutes (Nexperia and STMicroelectronics parts) carry AEC-Q101 qualification, indicating suitability for automotive and industrial environments with stringent reliability requirements. If your application requires automotive-grade components, prioritize AEC-Q101 qualified substitutes.

Q10: How do I determine which substitute is best for my specific application?

A: Selection depends on three primary factors: (1) Current requirement: Match or exceed your circuit's maximum continuous current. (2) Thermal management: If using heat sinks or thermal interface materials, Tc ratings apply; otherwise, derate to Ta equivalent. (3) Gate drive capability: Verify your gate drive circuit can supply sufficient current for the substitute's gate charge specification. For most general-purpose replacements, PSMN3R3-80BS,118 or BUK764R2-80E,118 are recommended due to active product status, automotive qualification, and balanced electrical characteristics.

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