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AOB440 N-Channel 60V 75A MOSFET Equivalent & Substitute Parts
Part Overview
The AOB440 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Alpha & Omega Semiconductor Inc., rated for 60V drain-to-source voltage and 75A continuous drain current in a surface mount TO-263 (D2PAK) package. The device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and current manufacturing availability.
Substiute Parts
Key Parameters
| Parameter | AOB440 Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 75 | A (Tc) |
| On-State Resistance (Rds On) @ Id, Vgs | 7.5 mOhm @ 30A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 88 | nC @ 10V |
| Maximum Gate Voltage (Vgs Max) | ±20 | V |
| Input Capacitance (Ciss) @ Vds | 4560 | pF @ 30V |
| Power Dissipation (Max) | 150 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-263 (D2PAK) | — |
| Mounting Type | Surface Mount | — |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the AOB440 is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
- Continuous Drain Current (Id): Must equal or exceed 75A at Tc
- Package Type: Must be TO-263 (D2PAK) or compatible surface mount variant
- FET Type: Must be N-Channel metal oxide technology
- Operating Temperature Range: Must span -55°C to 175°C (TJ)
- Gate Voltage Rating (Vgs Max): Must support ±20V or greater
Secondary Compatibility Parameters:
- On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 7.5 mOhm @ specified conditions are preferred
- Gate Charge (Qg): Lower values reduce switching losses; values at or below 88 nC are preferred
- Input Capacitance (Ciss): Lower values improve switching speed; values at or below 4560 pF are preferred
- Power Dissipation: Higher ratings provide thermal margin; values at or above 150W are preferred
Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with active product status) and Compatible Alternatives (meeting electrical requirements with potential trade-offs in secondary parameters or product grade).
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Vgs Max (V) | Package | Status |
|---|---|---|---|---|---|---|---|---|
| AOB440 | Alpha & Omega Semiconductor | 60 | 75 (Tc) | 7.5 @ 30A, 10V | 88 @ 10V | ±20 | TO-263 (D2PAK) | Obsolete |
| BUK966R5-60E,118 | Nexperia USA Inc. | 60 | 75 (Tc) | 5.9 @ 25A, 10V | 48 @ 5V | ±10 | D2PAK | Active |
| BUK969R0-60E,118 | Nexperia USA Inc. | 60 | 75 (Tc) | 8 @ 20A, 10V | 29.8 @ 5V | ±10 | D2PAK | Active |
| IPB054N06N3GATMA1 | Infineon Technologies | 60 | 80 (Tc) | 5.4 @ 80A, 10V | 82 @ 10V | ±20 | PG-TO263-3 | Last Time Buy |
| IPB80N06S405ATMA2 | Infineon Technologies | 60 | 80 (Tc) | 5.7 @ 80A, 10V | 81 @ 10V | ±20 | PG-TO263-3-2 | Active |
| IPB80N06S407ATMA2 | Infineon Technologies | 60 | 80 (Tc) | Not specified | 56 @ 10V | ±20 | PG-TO263-3-2 | Active |
| IPB057N06NATMA1 | Infineon Technologies | 60 | 45 (Tc) | 5.7 @ 45A, 10V | 27 @ 10V | ±20 | PG-TO263-3 | Active |
| HUF75345S3ST | onsemi | 55 | 75 (Tc) | 7 @ 75A, 10V | 275 @ 20V | ±20 | TO-263 (D2PAK) | Active |
| 2SK3710 | Sanken Electric USA Inc. | 60 | 85 (Ta) | 6 @ 35A, 10V | Not specified | ±20 | TO-220S | Active |
| IXTA120N075T2 | IXYS | 75 | 120 (Tc) | 7.7 @ 60A, 10V | 78 @ 10V | ±20 | TO-263AA | Active |
| PSMN7R6-60BS,118 | Nexperia USA Inc. | 60 | 92 (Tc) | 7.8 @ 25A, 10V | 38.7 @ 10V | ±20 | D2PAK | Active |
Engineering Selection Recommendations
Tier 1: Direct Equivalents (Recommended for Primary Selection)
BUK966R5-60E,118 (Nexperia USA Inc.) and BUK969R0-60E,118 (Nexperia USA Inc.) are the primary recommended substitutes. Both devices match the AOB440 electrical specifications (60V Vdss, 75A Id, D2PAK package) and maintain active product status with AEC-Q101 automotive qualification. BUK966R5-60E,118 offers superior on-state resistance (5.9 mOhm) and reduced gate charge (48 nC), resulting in lower switching losses and improved thermal performance. BUK969R0-60E,118 provides the lowest gate charge (29.8 nC) among direct equivalents, optimizing for high-frequency switching applications. Both devices are RoHS3 compliant and carry REACH Unaffected status.
IPB80N06S405ATMA2 and IPB80N06S407ATMA2 (Infineon Technologies OptiMOS™ series) provide active alternatives with 80A continuous drain current, exceeding the AOB440 specification. Both maintain 60V Vdss rating, TO-263 package compatibility, and AEC-Q101 automotive qualification. IPB80N06S405ATMA2 offers 5.7 mOhm on-state resistance with 81 nC gate charge. IPB80N06S407ATMA2 reduces gate charge to 56 nC, supporting higher switching frequencies. Both are RoHS3 compliant.
Tier 2: Compatible Alternatives (Secondary Selection)
PSMN7R6-60BS,118 (Nexperia USA Inc.) exceeds the AOB440 current rating at 92A continuous drain current while maintaining 60V Vdss and D2PAK package. On-state resistance of 7.8 mOhm and gate charge of 38.7 nC provide acceptable performance margins. Active product status and RoHS3 compliance support production continuity.
HUF75345S3ST (onsemi UltraFET™ series) operates at 55V Vdss, below the AOB440 specification, and is suitable only for applications with maximum operating voltages below 55V. The device provides 75A continuous drain current and superior power dissipation (325W), supporting high-power applications. Active product status and RoHS3 compliance are confirmed.
IXTA120N075T2 (IXYS TrenchT2™ series) operates at 75V Vdss with 120A continuous drain current, exceeding AOB440 specifications. The device is suitable for applications requiring higher voltage or current margins. Active product status and RoHS3 compliance are confirmed.
Tier 3: Conditional Alternatives (Limited Scope)
IPB054N06N3GATMA1 (Infineon Technologies) carries Last Time Buy status and is not recommended for new designs. The device provides 80A continuous drain current and 60V Vdss but is subject to end-of-life discontinuation.
IPB057N06NATMA1 (Infineon Technologies) provides only 45A continuous drain current, below the AOB440 specification, and is unsuitable for direct substitution in applications requiring 75A operation.
2SK3710 (Sanken Electric USA Inc.) operates in TO-220S package, incompatible with the AOB440 TO-263 (D2PAK) footprint. Package change requires PCB redesign and is not recommended for direct substitution.
Frequently Asked Questions (FAQ)
Q: Can the BUK966R5-60E,118 directly replace the AOB440 without circuit modifications?
A: Yes. The BUK966R5-60E,118 matches the AOB440 in drain-to-source voltage (60V), continuous drain current (75A), and package type (D2PAK). Both devices operate across the -55°C to 175°C temperature range. The BUK966R5-60E,118 exhibits lower on-state resistance (5.9 mOhm vs. 7.5 mOhm) and reduced gate charge (48 nC vs. 88 nC), resulting in improved efficiency and reduced switching losses. No circuit modifications are required.
Q: What is the difference between the BUK966R5-60E,118 and BUK969R0-60E,118?
A: Both devices are rated for 60V Vdss and 75A continuous drain current in D2PAK packages. The BUK966R5-60E,118 provides 5.9 mOhm on-state resistance with 48 nC gate charge. The BUK969R0-60E,118 provides 8 mOhm on-state resistance with 29.8 nC gate charge. The BUK969R0-60E,118 is optimized for high-frequency switching applications due to lower gate charge, while the BUK966R5-60E,118 offers superior conduction efficiency. Selection depends on application switching frequency and thermal requirements.
Q: Why is the IPB80N06S405ATMA2 rated for 80A instead of 75A?
A: The IPB80N06S405ATMA2 is rated for 80A continuous drain current at Tc (case temperature), exceeding the AOB440 specification of 75A. This higher rating provides additional current margin and thermal headroom in applications operating near maximum current limits. The device remains fully compatible with circuits designed for 75A operation.
Q: Can the HUF75345S3ST replace the AOB440 in all applications?
A: No. The HUF75345S3ST is rated for 55V Vdss, below the AOB440 specification of 60V. The device is suitable only for applications with maximum operating voltages not exceeding 55V. For applications requiring the full 60V rating, use BUK966R5-60E,118, BUK969R0-60E,118, or IPB80N06S405ATMA2.
Q: What does "Last Time Buy" status mean for the IPB054N06N3GATMA1?
A: Last Time Buy status indicates the manufacturer has announced end-of-life for the device. Existing inventory may be available for a limited period, but the part will be discontinued. New designs should not incorporate this device. Use active alternatives such as BUK966R5-60E,118 or IPB80N06S405ATMA2 for production continuity.
Q: Is the 2SK3710 compatible with the AOB440 PCB layout?
A: No. The 2SK3710 uses TO-220S package, while the AOB440 uses TO-263 (D2PAK) package. These packages have different pin configurations and footprints. PCB redesign is required for substitution. For direct footprint compatibility, use BUK966R5-60E,118, BUK969R0-60E,118, or IPB80N06S405ATMA2.
Q: What is the significance of AEC-Q101 qualification?
A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. Devices carrying AEC-Q101 qualification (BUK966R5-60E,118, BUK969R0-60E,118, IPB80N06S405ATMA2, IPB80N06S407ATMA2) meet stringent reliability, temperature cycling, and electrical performance requirements for automotive applications. Non-qualified devices may be suitable for industrial or consumer applications but are not approved for automotive use.
Q: Why do some substitute parts have lower gate charge than the AOB440?
A: Gate charge (Qg) determines the energy required to switch the transistor on and off. Lower gate charge reduces switching losses and allows higher switching frequencies. Devices such as BUK966R5-60E,118 (48 nC) and BUK969R0-60E,118 (29.8 nC) provide improved efficiency compared to the AOB440 (88 nC). Selection depends on application switching frequency and thermal budget.
Q: Are all substitute parts RoHS3 compliant?
A: All recommended substitute parts (BUK966R5-60E,118, BUK969R0-60E,118, IPB80N06S405ATMA2, IPB80N06S407ATMA2, HUF75345S3ST, IXTA120N075T2, PSMN7R6-60BS,118) are RoHS3 compliant. The AOB440 status is not specified in the provided data. RoHS3 compliance ensures the device contains no restricted hazardous substances and meets environmental regulations for electronic equipment.
Q: Can the IXTA120N075T2 be used in place of the AOB440?
A: Yes, with voltage margin consideration. The IXTA120N075T2 is rated for 75V Vdss (exceeding the AOB440 60V specification) and 120A continuous drain current (exceeding the AOB440 75A specification). The device is suitable for applications requiring higher voltage or current ratings. The TO-263AA package is compatible with TO-263 (D2PAK) footprints. No circuit modifications are required for direct substitution.
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