AOB416 N-Channel MOSFET 100V 6.2A/45A TO-263 Equivalent & Substitute Parts

Part Overview

The AOB416 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with continuous drain current of 6.2A at Ta and 45A at Tc. The device is housed in a TO-263 (D2PAK) surface mount package and is part of the SDMOS™ series. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ Ta	6.2	A
Continuous Drain Current @ Tc	45	A
On-Resistance (Rds On) @ 20A, 10V	36	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	24	nC
Input Capacitance (Ciss) @ 50V	1450	pF
Power Dissipation @ Tc	150	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263 (D2PAK)	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the AOB416 is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal 100V
Package Type: Must be TO-263 (D2PAK) surface mount
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 175°C

Performance Parameters for Functional Equivalence:

Continuous Drain Current @ Tc: Substitute must meet or exceed 45A
On-Resistance (Rds On): Substitute must not exceed 36mOhm at specified conditions
Gate Threshold Voltage: Must be compatible with 4V @ 250µA specification
Power Dissipation @ Tc: Substitute must support minimum 150W

All substitute parts listed meet these criteria and are available in active product status with current inventory, providing direct functional replacement capability for the obsolete AOB416.

Parameter Comparison

Parameter	AOB416	BUK9637-100E,118	FDB3682	FQB44N10TM	HUF75631S3ST	IRF1310NSTRLPBF	PHB27NQ10T,118	STB30NF10T4
Manufacturer	Alpha & Omega	Nexperia	onsemi	onsemi	onsemi	Infineon	Nexperia	STMicroelectronics
Vdss (V)	100	100	100	100	100	100	100	100
Id @ Tc (A)	45	31	32	43.5	33	42	28	35
Rds On (mOhm)	36 @ 20A, 10V	36 @ 10A, 10V	36 @ 32A, 10V	39 @ 21.75A, 10V	40 @ 33A, 10V	36 @ 22A, 10V	50 @ 14A, 10V	45 @ 15A, 10V
Vgs(th) @ Id (V)	4 @ 250µA	2.1 @ 1mA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 1mA	4 @ 250µA
Qg @ Vgs (nC)	24 @ 10V	22.8 @ 5V	28 @ 10V	62 @ 10V	79 @ 20V	110 @ 10V	30 @ 10V	55 @ 10V
Ciss (pF)	1450 @ 50V	2681 @ 25V	1250 @ 25V	1800 @ 25V	1220 @ 25V	1900 @ 25V	1240 @ 25V	1180 @ 25V
Power Dissipation @ Tc (W)	150	96	95	146	120	160	107	115
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-263 (D2PAK)	D2PAK	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

All substitute parts listed are active products with current manufacturing status and full RoHS3 compliance, providing long-term availability and regulatory support compared to the obsolete AOB416.

BUK9637-100E,118 (Nexperia): Offers AEC-Q101 automotive qualification with 31A continuous drain current and 96W power dissipation. Suitable for applications requiring automotive-grade reliability and lower current requirements than the original AOB416.

FDB3682 (onsemi): Provides 32A continuous drain current and 95W power dissipation with PowerTrench® technology. Maintains equivalent on-resistance specification and gate threshold voltage matching the AOB416 at 4V @ 250µA.

FQB44N10TM (onsemi): Delivers 43.5A continuous drain current and 146W power dissipation, approaching the original AOB416 performance envelope. Suitable for high-current applications with slightly elevated gate charge characteristics.

HUF75631S3ST (onsemi): Rated for 33A continuous drain current and 120W power dissipation. Provides mid-range performance between lower and higher current substitute options.

IRF1310NSTRLPBF (Infineon): Offers 42A continuous drain current and 160W power dissipation with HEXFET® technology. Delivers performance closest to the original AOB416 specifications with higher gate charge at 110nC @ 10V.

PHB27NQ10T,118 (Nexperia): Rated for 28A continuous drain current and 107W power dissipation. Suitable for lower-current applications with TrenchMOS™ technology and elevated on-resistance at 50mOhm.

STB30NF10T4 (STMicroelectronics): Provides 35A continuous drain current and 115W power dissipation with STripFET™ II technology. Offers balanced performance characteristics for general-purpose switching applications.

Frequently Asked Questions (FAQ)

Q: Can the AOB416 be directly replaced with any of these substitute parts?

A: All listed substitute parts share the same 100V Vdss rating, N-Channel MOSFET technology, and TO-263 (D2PAK) package. Direct physical and electrical substitution is possible. However, continuous drain current ratings vary between 28A and 43.5A at Tc, compared to the original 45A. Application-specific current requirements must be verified.

Q: What is the primary difference between these substitute parts?

A: The main differences are continuous drain current ratings, power dissipation capabilities, and gate charge characteristics. IRF1310NSTRLPBF and FQB44N10TM provide the highest current ratings (42A and 43.5A respectively), while PHB27NQ10T,118 offers the lowest at 28A. Gate charge varies from 22.8nC to 110nC, affecting switching speed and drive circuit requirements.

Q: Are all substitute parts available in the same package?

A: Yes, all substitute parts use TO-263 (D2PAK) surface mount packaging with identical pinout and mechanical dimensions, ensuring direct PCB compatibility without layout modifications.

Q: Which substitute part best matches the original AOB416 specifications?

A: IRF1310NSTRLPBF provides the closest performance match with 42A continuous drain current, 160W power dissipation, and 36mOhm on-resistance. FQB44N10TM also delivers comparable performance with 43.5A current rating and 146W power dissipation.

Q: Do all substitute parts meet the same compliance standards as the AOB416?

A: Yes, all substitute parts are RoHS3 compliant and REACH unaffected, matching the regulatory status of the original AOB416. BUK9637-100E,118 additionally carries AEC-Q101 automotive qualification for applications requiring automotive-grade reliability.

Q: What should be considered when selecting a substitute for a specific application?

A: Verify that the substitute part's continuous drain current rating at Tc meets or exceeds the application's maximum current requirement. Confirm that on-resistance and power dissipation specifications are compatible with thermal management and efficiency targets. Review gate charge specifications if the drive circuit has specific switching speed requirements.

Q: Is the operating temperature range identical across all parts?

A: Yes, all substitute parts and the original AOB416 support the same operating temperature range of -55°C to 175°C (TJ), ensuring thermal compatibility in all applications.

Q: Can gate charge differences affect circuit performance?

A: Gate charge variations between 22.8nC and 110nC may impact switching speed and drive circuit power consumption. Applications with high-frequency switching or tight timing requirements should verify compatibility with the selected substitute's gate charge specification.

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