AOB412L N-Channel MOSFET 100V 8.2A/60A TO-263 Equivalent & Substitute Parts

Part Overview

The AOB412L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with continuous drain current of 8.2A at Ta (ambient temperature) and 60A at Tc (case temperature). The device is housed in a TO-263 (D2PAK) surface mount package and belongs to the SDMOS™ series. The AOB412L is classified as obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	AOB412L Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Tc)	60	A
On-State Resistance (Rds On) @ 20A, 10V	15.5	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	3.8	V
Gate Charge (Qg) @ 10V	54	nC
Input Capacitance (Ciss) @ 50V	3220	pF
Power Dissipation (Tc)	150	W
Operating Temperature Range	−55 to 175	°C
Package Type	TO-263 (D2PAK)	—
Mounting Type	Surface Mount	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the AOB412L is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Package Type: TO-263 (D2PAK) surface mount configuration
FET Type: N-Channel MOSFET technology
Mounting Type: Surface mount
Moisture Sensitivity Level: MSL 1 (Unlimited)

Performance Compatibility Criteria:

Continuous Drain Current (Tc): Substitute must equal or exceed 60A
On-State Resistance (Rds On): Lower or equivalent values acceptable
Gate Charge (Qg): Lower values preferred for switching efficiency
Operating Temperature Range: Must support −55°C to 175°C minimum
Power Dissipation (Tc): Must support minimum 150W thermal capability

Substitute parts are grouped into two categories: direct equivalents with identical or superior electrical performance, and functional alternatives that maintain circuit operation within specified voltage and current parameters while offering improved thermal or switching characteristics.

Parameter Comparison

Parameter	AOB412L	FDB120N10	FDB150N10	HUF75645S3ST	HUFA75645S3S	IPB123N10N3GATMA1	IPB70N10S3L12ATMA1	IRF3610STRLPBF	IRF8010STRLPBF	IRFS4510TRLPBF
Vdss (V)	100	100	100	100	100	100	100	100	100	100
Id @ Tc (A)	60	74	57	75	75	58	70	103	80	61
Rds On (mOhm)	15.5 @ 20A, 10V	12 @ 74A, 10V	15 @ 49A, 10V	14 @ 75A, 10V	14 @ 75A, 10V	12.3 @ 46A, 10V	11.8 @ 70A, 10V	11.6 @ 62A, 10V	15 @ 45A, 10V	13.9 @ 37A, 10V
Vgs(th) (V)	3.8 @ 250µA	4.5 @ 250µA	4.5 @ 250µA	4 @ 250µA	4 @ 250µA	3.5 @ 46µA	2.4 @ 83µA	4 @ 250µA	4 @ 250µA	4 @ 100µA
Qg @ 10V (nC)	54	86	69	238 @ 20V	238 @ 20V	35	80	150	120	87
Ciss (pF)	3220 @ 50V	5605 @ 25V	4760 @ 25V	3790 @ 25V	3790 @ 25V	2500 @ 50V	5550 @ 25V	5380 @ 25V	3830 @ 25V	3180 @ 50V
Pd (Tc) (W)	150	170	110	310	310	94	125	—	260	140
Tj Range (°C)	−55 to 175	−55 to 175	−55 to 150	−55 to 175	−55 to 175	−55 to 175	−55 to 175	—	−55 to 175	−55 to 175
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)
Product Status	Obsolete	Active	Active	Obsolete	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Compatibility):

The following parts are recommended as primary substitutes based on active product status, full compliance certifications, and electrical parameter compatibility:

FDB120N10 (onsemi, PowerTrench® series): Rated for 74A continuous drain current at Tc, exceeding the AOB412L specification of 60A. On-state resistance of 12 mOhm at 74A, 10V provides improved efficiency. Operating temperature range −55°C to 175°C matches the AOB412L. RoHS3 compliant. TO-263 (D2PAK) package. Inventory: 15,326 units.

IPB70N10S3L12ATMA1 (Infineon Technologies, OptiMOS™ series): Rated for 70A continuous drain current at Tc, exceeding the AOB412L specification. On-state resistance of 11.8 mOhm at 70A, 10V provides superior switching efficiency. Gate charge of 80 nC at 10V offers moderate switching speed. Operating temperature range −55°C to 175°C. RoHS3 compliant. TO-263 (D2PAK) package. Inventory: 15,980 units.

IRF8010STRLPBF (Infineon Technologies, HEXFET® series): Rated for 80A continuous drain current at Tc, significantly exceeding the AOB412L specification. On-state resistance of 15 mOhm at 45A, 10V is equivalent to the AOB412L. Power dissipation capability of 260W at Tc exceeds the AOB412L. Operating temperature range −55°C to 175°C. RoHS3 compliant. TO-263 (D2PAK) package. Inventory: 20,300 units.

Secondary Substitutes (Active Status, Thermal or Performance Trade-offs):

FDB150N10 (onsemi, PowerTrench® series): Rated for 57A continuous drain current at Tc, slightly below the AOB412L specification of 60A. On-state resistance of 15 mOhm at 49A, 10V is equivalent. Operating temperature range −55°C to 150°C (lower maximum than AOB412L). RoHS3 compliant. TO-263 (D2PAK) package. Inventory: 2,120 units.

IPB123N10N3GATMA1 (Infineon Technologies, OptiMOS™ series): Rated for 58A continuous drain current at Tc, slightly below the AOB412L specification. On-state resistance of 12.3 mOhm at 46A, 10V provides improved efficiency. Gate charge of 35 nC at 10V offers superior switching speed. Operating temperature range −55°C to 175°C. RoHS3 compliant. TO-263 (D2PAK) package. Inventory: 3,884 units.

IRFS4510TRLPBF (Infineon Technologies, HEXFET® series): Rated for 61A continuous drain current at Tc, meeting the AOB412L specification. On-state resistance of 13.9 mOhm at 37A, 10V provides improved efficiency. Power dissipation capability of 140W at Tc is slightly below the AOB412L. Operating temperature range −55°C to 175°C. RoHS3 compliant. TO-263 (D2PAK) package. Inventory: 4,100 units.

Obsolete Alternatives (Not Recommended for New Designs):

HUF75645S3ST (onsemi, UltraFET™ series): Rated for 75A continuous drain current at Tc. On-state resistance of 14 mOhm at 75A, 10V. Power dissipation capability of 310W at Tc. Operating temperature range −55°C to 175°C. RoHS3 compliant. Product status is obsolete. Inventory: 1,129 units.

HUFA75645S3S (Fairchild Semiconductor, UltraFET™ series): Rated for 75A continuous drain current at Tc. Identical electrical specifications to HUF75645S3ST. Product status is active. Inventory: 1,700 units.

IRF3610STRLPBF (Infineon Technologies, HEXFET® series): Rated for 103A continuous drain current at Tc. On-state resistance of 11.6 mOhm at 62A, 10V. Product status is active. RoHS3 compliant. TO-263 (D2PAK) package. Inventory: 1,371 units.

Frequently Asked Questions (FAQ)

Q: Can the AOB412L be directly replaced with any of the listed substitute parts?

A: Direct replacement is possible only with parts that maintain identical Vdss (100V), package type (TO-263 D2PAK), and continuous drain current rating (60A or higher at Tc). FDB120N10, IPB70N10S3L12ATMA1, and IRF8010STRLPBF meet all three criteria. Other substitutes require circuit evaluation for thermal and current handling compatibility.

Q: What is the significance of the TO-263 (D2PAK) package specification?

A: The TO-263 (D2PAK) package is a three-terminal surface mount configuration with two leads and a tab for thermal connection. All listed substitute parts use identical or compatible TO-263 packaging, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heat sink mounting arrangements.

Q: Why do some substitute parts have lower continuous drain current ratings than the AOB412L?

A: FDB150N10 (57A) and IPB123N10N3GATMA1 (58A) are rated slightly below the AOB412L specification of 60A. These parts are suitable for applications where the actual circuit current demand does not exceed their rated values. Circuit analysis is required to confirm compatibility in current-limited applications.

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: The AOB412L specifies 8.2A at Ta (ambient temperature) and 60A at Tc (case temperature). The Tc rating assumes active heat sinking and thermal management. All substitute parts use Tc ratings, which represent the maximum continuous current with proper thermal interface. Circuit designs must account for actual thermal conditions to ensure safe operation.

Q: Are all substitute parts RoHS3 compliant?

A: All active-status substitute parts listed (FDB120N10, FDB150N10, IPB123N10N3GATMA1, IPB70N10S3L12ATMA1, IRF3610STRLPBF, IRF8010STRLPBF, IRFS4510TRLPBF) are RoHS3 compliant. The obsolete HUF75645S3ST is RoHS3 compliant; HUFA75645S3S compliance status is not specified in the provided data.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values (IPB123N10N3GATMA1 at 35 nC) result in faster switching and lower gate drive power consumption. Higher values (HUF75645S3ST at 238 nC) indicate slower switching but may provide better noise immunity. Selection depends on gate driver capability and switching frequency requirements.

Q: Can the AOB412L be used interchangeably with parts rated for lower Vdss values?

A: No. The AOB412L is rated for 100V Vdss. Substitution with parts rated for lower voltages (such as IPB80N03S4L03ATMA1 at 30V) is not permitted, as they cannot withstand the full voltage stress in 100V circuits and will fail catastrophically.

Q: What packaging options are available for substitute parts?

A: All substitute parts are available in TO-263 (D2PAK) surface mount configuration. Packaging variants include Tape & Reel (TR), Cut Tape (CT) with Digi-Reel®, and Bulk options. Selection of packaging type depends on procurement volume and assembly process requirements.

Q: Why is product status (Active vs. Obsolete) important for substitution?

A: Active-status parts have ongoing manufacturing support, guaranteed availability, and continued compliance with current standards. Obsolete parts may have limited remaining inventory and no future production. For new designs or long-term production, active-status substitutes are strongly preferred to ensure supply chain continuity.

Q: How do on-state resistance (Rds On) differences affect circuit performance?

A: Lower Rds On values reduce conduction losses and heat generation. For example, IPB70N10S3L12ATMA1 at 11.8 mOhm generates less heat than the AOB412L at 15.5 mOhm under identical current conditions. This improves efficiency and reduces thermal management requirements. Higher Rds On values increase power dissipation and may require enhanced cooling.

Q: Are there any electrical parameter mismatches that would prevent substitution?

A: Yes. Vdss (drain-to-source voltage) must be 100V or higher. Continuous drain current must be 60A or higher at Tc. Operating temperature range must support −55°C to 175°C minimum. Gate-source maximum voltage (Vgs Max) must be ±20V or higher. Moisture sensitivity level must be MSL 1 (Unlimited). Any mismatch in these parameters indicates incompatibility.

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