AOB298L N-Channel 100V MOSFET Equivalent & Substitute Parts

Part Overview

The AOB298L is an N-Channel 100V MOSFET manufactured by Alpha & Omega Semiconductor Inc., housed in a TO-263 (D2PAK) surface mount package. This device is rated for 9A continuous drain current at ambient temperature (Ta) and 58A at case temperature (Tc), with maximum power dissipation of 2.1W (Ta) and 100W (Tc). The AOB298L is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing.

Substitute parts listed in this reference are qualified alternatives that maintain functional compatibility within the specified electrical and mechanical parameters of the AOB298L.

Key Parameters

Parameter	AOB298L Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 58A (Tc)	A
Rds On (Max) @ Id, Vgs	14.5 mOhm @ 20A, 10V	mOhm
Vgs(th) (Max) @ Id	4.1V @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10V	nC
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 50V	pF
Power Dissipation (Max)	2.1W (Ta), 100W (Tc)	W
Operating Temperature	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the AOB298L are qualified based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

FET Type: N-Channel (required match)
Drain to Source Voltage (Vdss): 100V (required match)
Package / Case: TO-263-3, D2PAK (required match)
Mounting Type: Surface Mount (required match)
Operating Temperature Range: Minimum -55°C to 175°C (required match or exceed)
RoHS Status: ROHS3 Compliant (required match)
Moisture Sensitivity Level: MSL 1 (required match or better)

Secondary Compatibility Parameters:

Continuous Drain Current (Id @ Tc): 50A minimum to 80A maximum
Rds On (Max) @ 10V: 11.8 mOhm to 15.4 mOhm
Gate Charge (Qg) @ 10V: 27 nC to 120 nC
Input Capacitance (Ciss): 1670 pF to 5605 pF
Power Dissipation (Tc): 94W to 310W

All substitute parts listed maintain N-Channel MOSFET topology with 100V Vdss rating and TO-263 D2PAK surface mount packaging. Variations in continuous drain current, on-resistance, and power dissipation reflect different semiconductor process technologies and thermal management capabilities, all within acceptable substitution parameters for the AOB298L application envelope.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Ciss @ Vds (pF)	Power Diss. Tc (W)	Temp Range (°C)	Status
AOB298L	Alpha & Omega Semiconductor Inc.	100	58	14.5 @ 20A	27 @ 10V	1670 @ 50V	100	-55 to 175	Obsolete
BUK7613-100E,118	Nexperia USA Inc.	100	72	13 @ 20A	97.2 @ 10V	4533 @ 20V	182	-55 to 175	Obsolete
FDB120N10	onsemi	100	74	12 @ 74A	86 @ 10V	5605 @ 25V	170	-55 to 175	Active
FDB150N10	onsemi	100	57	15 @ 49A	69 @ 10V	4760 @ 25V	110	-55 to 150	Active
HUF75645S3ST	onsemi	100	75	14 @ 75A	238 @ 20V	3790 @ 25V	310	-55 to 175	Obsolete
HUFA75645S3S	Fairchild Semiconductor	100	75	14 @ 75A	238 @ 20V	3790 @ 25V	310	-55 to 175	Active
IPB123N10N3GATMA1	Infineon Technologies	100	58	12.3 @ 46A	35 @ 10V	2500 @ 50V	94	-55 to 175	Active
IPB50N10S3L16ATMA1	Infineon Technologies	100	50	15.4 @ 50A	64 @ 10V	4180 @ 25V	100	-55 to 175	Active
IPB70N10S3L12ATMA1	Infineon Technologies	100	70	11.8 @ 70A	80 @ 10V	5550 @ 25V	125	-55 to 175	Active
IRF8010STRLPBF	Infineon Technologies	100	80	15 @ 45A	120 @ 10V	3830 @ 25V	260	-55 to 175	Active
IRFS4510TRLPBF	Infineon Technologies	100	61	13.9 @ 37A	87 @ 10V	3180 @ 50V	140	-55 to 175	Active

Engineering Selection Recommendations

Primary Recommendation for Direct Replacement:

IPB123N10N3GATMA1 (Infineon Technologies OptiMOS™ series) is the closest functional equivalent to the AOB298L. This part maintains identical continuous drain current rating (58A @ Tc), matching Vdss (100V), identical operating temperature range (-55°C to 175°C), and TO-263-3 D2PAK packaging. The IPB123N10N3GATMA1 is currently in Active product status with full RoHS3 compliance and MSL 1 rating. Gate charge (35 nC @ 10V) is slightly elevated compared to the AOB298L (27 nC @ 10V), and on-resistance is marginally improved (12.3 mOhm vs. 14.5 mOhm). This part is suitable for direct substitution in existing AOB298L designs without circuit modification.

Secondary Recommendations for Higher Current Applications:

FDB120N10 (onsemi PowerTrench® series) provides 74A continuous drain current with 12 mOhm on-resistance and 170W power dissipation. This part is in Active status and offers improved thermal performance for applications requiring higher current handling. Operating temperature range matches the AOB298L (-55°C to 175°C).

IPB70N10S3L12ATMA1 (Infineon Technologies OptiMOS™ series) delivers 70A continuous drain current with superior on-resistance (11.8 mOhm @ 70A, 10V) and 125W power dissipation. This part is in Active status with full compliance ratings and is suitable for designs requiring enhanced current capacity with reduced thermal dissipation.

Recommendations for Lower Current or Thermal-Constrained Applications:

FDB150N10 (onsemi PowerTrench® series) provides 57A continuous drain current, closely matching the AOB298L's 58A rating, with 15 mOhm on-resistance and 110W power dissipation. This part is in Active status. Note that the maximum operating temperature is limited to 150°C (vs. 175°C for the AOB298L), which may restrict use in high-temperature environments.

IPB50N10S3L16ATMA1 (Infineon Technologies OptiMOS™ series) is suitable for applications where 50A continuous drain current is acceptable. This part offers 100W power dissipation matching the AOB298L and is in Active status with full compliance.

Obsolete Part Alternatives:

HUF75645S3ST and HUFA75645S3S (onsemi and Fairchild Semiconductor UltraFET™ series) both provide 75A continuous drain current with 310W power dissipation. HUFA75645S3S is in Active status and represents a viable long-term alternative. HUF75645S3ST is obsolete. Both parts feature higher gate charge (238 nC @ 20V) compared to the AOB298L.

BUK7613-100E,118 (Nexperia USA Inc. TrenchMOS™ series) is an obsolete part offering 72A continuous drain current and 182W power dissipation. This part includes AEC-Q101 automotive qualification, which may be relevant for automotive applications.

IRF8010STRLPBF (Infineon Technologies HEXFET® series) provides 80A continuous drain current with 260W power dissipation and is in Active status. This part is suitable for high-current applications but features elevated gate charge (120 nC @ 10V).

IRFS4510TRLPBF (Infineon Technologies HEXFET® series) offers 61A continuous drain current with 140W power dissipation and is in Active status, representing a moderate upgrade path.

All recommended substitutes maintain N-Channel MOSFET topology, 100V Vdss rating, TO-263 D2PAK surface mount packaging, RoHS3 compliance, and MSL 1 moisture sensitivity rating. Selection among alternatives depends on specific application requirements for continuous drain current, on-resistance, power dissipation, and thermal management.

Frequently Asked Questions (FAQ)

Q: Can the IPB123N10N3GATMA1 be used as a direct drop-in replacement for the AOB298L?

A: Yes. The IPB123N10N3GATMA1 maintains identical continuous drain current (58A @ Tc), Vdss (100V), operating temperature range (-55°C to 175°C), and TO-263-3 D2PAK packaging. The part is in Active status with full RoHS3 and MSL 1 compliance. No circuit modifications are required for substitution.

Q: What is the primary difference between the AOB298L and higher-current alternatives like FDB120N10 or IPB70N10S3L12ATMA1?

A: The AOB298L is rated for 58A continuous drain current at case temperature. FDB120N10 provides 74A and IPB70N10S3L12ATMA1 provides 70A. These higher-current parts offer improved thermal performance (170W and 125W power dissipation respectively) and lower on-resistance, making them suitable for applications requiring greater current handling or reduced thermal dissipation. All three parts maintain 100V Vdss and TO-263 D2PAK packaging.

Q: Why is the AOB298L classified as obsolete, and what does this mean for new designs?

A: The AOB298L is obsolete, indicating that Alpha & Omega Semiconductor Inc. has discontinued production and support. For new designs, Active-status alternatives such as IPB123N10N3GATMA1, FDB120N10, IPB70N10S3L12ATMA1, or HUFA75645S3S are recommended to ensure long-term component availability and manufacturer support.

Q: Are all substitute parts compatible with the same PCB footprint as the AOB298L?

A: Yes. All substitute parts listed in this reference use TO-263-3 D2PAK (2 Leads + Tab) packaging, which maintains identical PCB footprint compatibility with the AOB298L. No PCB redesign is required for substitution.

Q: What is the significance of gate charge (Qg) differences between the AOB298L and substitute parts?

A: Gate charge affects the speed and energy required to switch the MOSFET on and off. The AOB298L has 27 nC @ 10V gate charge. Substitute parts range from 35 nC (IPB123N10N3GATMA1) to 238 nC (HUF75645S3ST, HUFA75645S3S). Higher gate charge requires more driver current and switching energy but does not affect DC operating characteristics. Selection depends on the gate driver circuit capability and switching frequency requirements of the application.

Q: Can I use a substitute part with lower on-resistance (Rds On) than the AOB298L?

A: Yes. Lower on-resistance reduces power dissipation and heat generation during conduction. For example, IPB70N10S3L12ATMA1 features 11.8 mOhm on-resistance compared to the AOB298L's 14.5 mOhm. This improvement is beneficial for high-current or continuous-duty applications. Verify that the gate driver circuit can support the gate charge requirements of the selected substitute.

Q: What is the difference between parts rated at Ta (ambient temperature) versus Tc (case temperature)?

A: The AOB298L specifies 9A continuous drain current at Ta (ambient temperature) and 58A at Tc (case temperature). Tc rating assumes active thermal management via the D2PAK tab connection to a heatsink. All substitute parts in this reference use Tc ratings, which represent the maximum current when the device is properly mounted to a heatsink. For applications without heatsinking, refer to the Ta rating or thermal resistance specifications in the device datasheet.

Q: Are all substitute parts RoHS3 compliant and MSL 1 rated?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the AOB298L specifications. This ensures compatibility with modern manufacturing processes and supply chain requirements.

Q: Which substitute part should I select if my application requires the lowest power dissipation?

A: IPB123N10N3GATMA1 provides 94W power dissipation at Tc, which is the lowest among all substitute parts while maintaining the AOB298L's 58A continuous drain current rating. This part is in Active status and is recommended for thermal-constrained applications.

Q: Can I use HUFA75645S3S instead of HUF75645S3ST?

A: Yes. Both parts are electrically and mechanically identical, with identical electrical specifications (75A continuous drain current, 100V Vdss, 310W power dissipation, TO-263 D2PAK packaging). The key difference is product status: HUFA75645S3S is in Active status (manufactured by Fairchild Semiconductor), while HUF75645S3ST is obsolete (manufactured by onsemi). HUFA75645S3S is recommended for new designs and long-term availability.

Q: What operating temperature range should I verify when selecting a substitute part?

A: The AOB298L operates from -55°C to 175°C (TJ). Most substitute parts maintain this range. FDB150N10 is limited to -55°C to 150°C maximum junction temperature, which may restrict use in high-temperature environments. Verify the operating temperature range of the selected substitute matches or exceeds your application requirements.

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