AOB292L N-Channel 100V 105A MOSFET TO-263 Equivalent & Substitute Parts

Part Overview

The AOB292L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with continuous drain current of 14.5A (Ta) and 105A (Tc) in a surface mount TO-263 (D2PAK) package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary for design continuity, production support, and legacy system maintenance where the AOB292L is currently deployed.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Tc)	105	A
Continuous Drain Current @ 25°C (Ta)	14.5	A
RDS(on) Max @ 20A, 10V	4.1	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.2	V
Gate Charge (Qg) @ 10V	126	nC
Input Capacitance (Ciss) @ 50V	6775	pF
Power Dissipation Max (Tc)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263 (D2PAK)	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitution of the AOB292L is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Tc): Must equal or exceed 105A
Package Type: Must be TO-263 (D2PAK) or equivalent surface mount package
Mounting Type: Surface mount configuration
Operating Temperature Range: Must support -55°C to 175°C minimum
RoHS3 Compliance: Required for regulatory alignment
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for handling consistency

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Acceptable range 2.1V to 4.5V @ specified test current
RDS(on) characteristics: Lower or equivalent values acceptable
Gate Charge (Qg): Lower values preferred for switching efficiency
Input Capacitance (Ciss): Acceptable within specified ranges

Substitute parts are grouped into two categories: direct replacements from Alpha & Omega Semiconductor (AOB66916L) and cross-manufacturer alternatives from Nexperia, onsemi, and Infineon Technologies that meet or exceed the electrical specifications of the AOB292L.

Parameter Comparison

Parameter	AOB292L	AOB66916L	BUK765R0-100E,118	BUK965R8-100E,118	FDB047N10	IPB042N10N3GATMA1	IRF100S201	IRFS4010TRLPBF	IRLS4030TRLPBF	PSMN5R6-100BS,118	STH130N8F7-2
Vdss (V)	100	100	100	100	100	100	100	100	100	100	80
Id (Tc) (A)	105	120	120	120	120	100	192	180	180	100	110
RDS(on) Max (mOhm)	4.1	3.6	5.0	5.8	4.7	4.2	4.2	4.7	4.3	5.6	5.0
Vgs(th) (V)	2.2	3.5	4.0	2.1	4.5	3.5	4.0	4.0	2.5	4.0	4.5
Qg (nC)	126	78	180	133	210	117	255	215	130	141	60
Ciss (pF)	6775	6180	11810	17460	15265	8410	9500	9575	11360	8061	4500
Pd Max (Tc) (W)	300	277	357	357	375	214	441	375	370	306	205
Tj Max (°C)	175	150	175	175	175	175	175	175	175	175	175
Package	TO-263	TO-263	D2PAK	D2PAK	TO-263	PG-TO263-3	PG-TO263-3	D2PAK	D2PAK	D2PAK	H2PAK-2
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

Tier 1 - Direct Manufacturer Replacement:

AOB66916L (Alpha & Omega Semiconductor Inc.) is the primary recommended substitute. This device maintains the same manufacturer lineage as the AOB292L, shares identical Vdss (100V) and package specifications (TO-263), and exceeds the continuous drain current requirement with 120A (Tc). The AOB66916L is classified as Active product status with full RoHS3 compliance and MSL 1 rating. The device operates within the required temperature range (-55°C to 150°C), though the maximum junction temperature is 25°C lower than the AOB292L. This part is suitable for direct substitution in legacy designs requiring minimal qualification effort.

Tier 2 - Cross-Manufacturer High-Performance Alternatives:

IRFS4010TRLPBF (Infineon Technologies HEXFET® series) and IRLS4030TRLPBF (Infineon Technologies HEXFET® series) both provide 180A continuous drain current at case temperature, exceeding AOB292L specifications by 71%. Both devices maintain 100V Vdss rating, TO-263/D2PAK package compatibility, and full operating temperature range (-55°C to 175°C). IRLS4030TRLPBF offers lower gate threshold voltage (2.5V) and reduced gate charge (130 nC), providing improved switching characteristics. Both parts carry Active product status and RoHS3 compliance.

FDB047N10 (onsemi PowerTrench® series) delivers 120A continuous drain current with 100V Vdss in TO-263 package. This device is Active status with RoHS3 compliance and full temperature range support. The part exhibits higher gate charge (210 nC) and input capacitance (15265 pF) compared to AOB292L, requiring evaluation for switching frequency compatibility.

Tier 3 - Automotive-Qualified Alternatives:

BUK765R0-100E,118 and BUK965R8-100E,118 (Nexperia TrenchMOS™ series) are AEC-Q101 qualified automotive-grade devices with 120A continuous drain current and 100V Vdss. Both maintain D2PAK package compatibility and full temperature range (-55°C to 175°C). BUK965R8-100E,118 features lower gate threshold voltage (2.1V) and reduced gate charge (133 nC @ 5V), suitable for low-voltage gate drive applications. These parts are recommended for automotive or mission-critical applications requiring automotive qualification.

Tier 4 - Reduced Voltage Alternative:

STH130N8F7-2 (STMicroelectronics STripFET™ F7 series) operates at 80V Vdss, which is 20V below the AOB292L specification. This device is suitable only for applications where the actual operating voltage does not exceed 80V. The part provides 110A continuous drain current, Active product status, and RoHS3 compliance. Use of this part requires confirmation that circuit maximum voltage stress remains below 80V.

Selection Criteria Summary:

For direct replacement with minimal design change: AOB66916L
For improved performance and full temperature range: IRFS4010TRLPBF or IRLS4030TRLPBF
For automotive applications: BUK765R0-100E,118 or BUK965R8-100E,118
For cost-optimized solutions: IPB042N10N3GATMA1 or PSMN5R6-100BS,118

All recommended substitutes maintain RoHS3 compliance, MSL 1 rating, and surface mount TO-263/D2PAK package compatibility with the AOB292L.

Frequently Asked Questions (FAQ)

Q: Can AOB66916L be used as a direct drop-in replacement for AOB292L?

A: AOB66916L is compatible from an electrical and mechanical standpoint. Both devices share 100V Vdss rating, TO-263 package type, and surface mount configuration. AOB66916L provides higher continuous drain current (120A vs. 105A), lower RDS(on) (3.6 mOhm vs. 4.1 mOhm), and reduced gate charge (78 nC vs. 126 nC). The maximum junction temperature of AOB66916L is 150°C compared to 175°C for AOB292L. Verify that your application does not require operation above 150°C junction temperature before substitution.

Q: What is the difference between continuous drain current ratings (Ta) and (Tc)?

A: (Ta) represents continuous drain current at ambient temperature (typically 25°C), while (Tc) represents continuous drain current at case temperature (typically 25°C). The (Tc) rating is the more practical specification for most applications, as it reflects the actual thermal conditions at the device case. AOB292L is rated for 14.5A (Ta) and 105A (Tc). Substitute parts should meet or exceed the 105A (Tc) requirement for equivalent performance.

Q: Are all substitute parts available in the same package as AOB292L?

A: All recommended substitutes are available in TO-263 or D2PAK packages, which are mechanically and electrically equivalent. STH130N8F7-2 uses H2PAK-2 package, which differs mechanically and requires PCB layout modification. Verify package footprint compatibility with your PCB design before selecting this alternative.

Q: What does "Not For New Designs" status mean for AOB292L?

A: "Not For New Designs" indicates that Alpha & Omega Semiconductor has discontinued the AOB292L for new product development. The part may still be available from inventory, but manufacturer support and long-term availability are not guaranteed. All recommended substitutes carry "Active" product status, ensuring ongoing availability and manufacturer support.

Q: Can I use IRF100S201 as a substitute despite its higher drain current rating (192A)?

A: IRF100S201 exceeds AOB292L specifications in continuous drain current (192A vs. 105A) and power dissipation (441W vs. 300W). The higher current rating does not prevent substitution; however, the device exhibits higher gate charge (255 nC vs. 126 nC) and input capacitance (9500 pF vs. 6775 pF), which may increase switching losses and require gate drive circuit evaluation. This part is suitable for applications where the additional performance margin is beneficial.

Q: What is the significance of RDS(on) specifications at different current and voltage levels?

A: RDS(on) (on-state drain-to-source resistance) varies with gate-source voltage (Vgs) and drain current (Id). AOB292L specifies RDS(on) = 4.1 mOhm @ 20A, 10V. Substitute parts may specify RDS(on) at different test conditions (e.g., 25A, 10V or 50A, 10V). Lower RDS(on) values reduce conduction losses and heat generation. When comparing substitutes, normalize RDS(on) specifications to the same test conditions for accurate comparison.

Q: Are automotive-qualified parts (AEC-Q101) necessary for non-automotive applications?

A: AEC-Q101 qualification is not required for non-automotive applications. BUK765R0-100E,118 and BUK965R8-100E,118 carry automotive qualification, which ensures additional reliability testing and traceability. These parts are suitable for any application but may carry higher cost. For non-automotive applications, non-qualified alternatives such as IRFS4010TRLPBF or FDB047N10 provide equivalent electrical performance at potentially lower cost.

Q: What is the impact of gate threshold voltage (Vgs(th)) variation on circuit design?

A: Gate threshold voltage determines the minimum gate-source voltage required to turn the MOSFET on. AOB292L specifies Vgs(th) = 2.2V @ 250µA, while substitutes range from 2.1V to 4.5V. Lower Vgs(th) values enable operation with lower gate drive voltages, beneficial for low-voltage gate drive circuits. Higher Vgs(th) values require higher gate drive voltages but may provide better noise immunity. Verify that your gate drive circuit can reliably supply the required Vgs for your selected substitute.

Q: Can STH130N8F7-2 be used in applications rated for 100V operation?

A: STH130N8F7-2 is rated for maximum 80V Vdss and is not suitable for applications with 100V rated voltage. Use of this device in 100V circuits creates risk of gate-drain breakdown and device failure. This part is recommended only for applications where the actual maximum voltage stress does not exceed 80V, confirmed through circuit analysis.

Q: What does MSL 1 (Unlimited) moisture sensitivity level mean?

A: MSL 1 indicates the device has unlimited shelf life and does not require special moisture control during storage or handling. All recommended substitutes carry MSL 1 rating, ensuring compatibility with standard component storage and assembly processes. No special baking or dry-pack requirements apply.

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