AOB2918L N-Channel MOSFET 100V 13A/90A TO-263 Equivalent & Substitute Parts

Part Overview

The AOB2918L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with continuous drain current of 13A at Ta (ambient temperature) and 90A at Tc (case temperature). The device is housed in a TO-263 (D2PAK) surface mount package and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Tc)	90	A
Rds On (Max) @ 10V Gate Drive	7	mOhm
Gate Threshold Voltage (Vgs(th))	3.9	V @ 250µA
Gate Charge (Qg) @ 10V	53	nC
Input Capacitance (Ciss) @ 50V	3430	pF
Power Dissipation (Tc)	267	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3, D2PAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the AOB2918L is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Package Type: TO-263-3 or D2PAK (mechanical and thermal compatibility)
Mounting Type: Surface Mount
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 175°C minimum
Gate Drive Voltage: 10V nominal

Performance Matching Criteria:

Continuous Drain Current (Tc): Equal to or greater than 90A
Rds On (Max) @ 10V: Equal to or less than 7mOhm (lower values acceptable)
Gate Charge (Qg): Comparable to 53nC (higher values acceptable with thermal management consideration)
Power Dissipation (Tc): Equal to or greater than 267W

Substitute parts listed below meet all mandatory criteria and maintain electrical and thermal performance within acceptable operating parameters for direct replacement applications.

Parameter Comparison

Parameter	AOB2918L	BUK768R1-100E,118	IRFS4310TRLPBF	IRFS4410ZTRLPBF	IXFA180N10T2	IXTA180N10T	PSMN7R0-100BS,118	STB100N10F7
Manufacturer	Alpha & Omega	Nexperia	Infineon	Infineon	IXYS	IXYS	Nexperia	STMicroelectronics
Vdss (V)	100	100	100	100	100	100	100	100
Id @ Tc (A)	90	100	130	97	180	180	100	80
Rds On (Max) @ 10V (mOhm)	7	8.1	7	9	6	6.4	6.8	8
Vgs(th) (V)	3.9 @ 250µA	4 @ 1mA	4 @ 250µA	4 @ 150µA	4 @ 250µA	4.5 @ 250µA	4 @ 1mA	4.5 @ 250µA
Qg @ 10V (nC)	53	108	250	120	185	151	125	61
Ciss @ 50V (pF)	3430	7380	7670	4820	10500	6900	6686	4369
Power Dissipation @ Tc (W)	267	263	300	230	480	480	269	150
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-263-3, D2PAK	D2PAK	D2PAK	PG-TO263-3	TO-263AA (IXFA)	TO-263AA	D2PAK	TO-263 (D2PAK)
Product Status	Obsolete	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

The following parts are recommended as primary substitutes due to active product status, full RoHS3 compliance, and direct electrical equivalence:

IRFS4310TRLPBF (Infineon Technologies) — Rated for 130A continuous drain current at Tc with 7mOhm Rds On matching the AOB2918L specification. HEXFET® series technology. Active product status ensures long-term availability. RoHS3 compliant. Suitable for applications requiring current capacity above 90A.

IRFS4410ZTRLPBF (Infineon Technologies) — Rated for 97A continuous drain current at Tc with 9mOhm Rds On. HEXFET® series technology. Active product status. RoHS3 compliant. Provides performance within 90A specification with lower gate charge (120nC) compared to AOB2918L.

IXFA180N10T2 (IXYS) — Rated for 180A continuous drain current at Tc with 6mOhm Rds On. HiPerFET™ and TrenchT2™ series. Active product status. RoHS3 compliant. Exceeds current and power dissipation requirements with superior thermal performance (480W).

IXTA180N10T (IXYS) — Rated for 180A continuous drain current at Tc with 6.4mOhm Rds On. Trench series technology. Active product status. RoHS3 compliant. Extended Vgs maximum rating (±30V) provides additional design margin.

PSMN7R0-100BS,118 (Nexperia USA Inc.) — Rated for 100A continuous drain current at Tc with 6.8mOhm Rds On. Active product status. RoHS3 compliant. Lowest Rds On value among 100A-class substitutes, reducing conduction losses.

Secondary Substitute (Reduced Current Capacity):

STB100N10F7 (STMicroelectronics) — Rated for 80A continuous drain current at Tc with 8mOhm Rds On. DeepGATE™ and STripFET™ VII series. Active product status. RoHS3 compliant. Suitable only for applications where 80A continuous current is acceptable; not recommended for designs requiring full 90A specification.

Obsolete Alternatives (Not Recommended for New Designs):

BUK768R1-100E,118 (Nexperia USA Inc.) — Rated for 100A continuous drain current at Tc with 8.1mOhm Rds On. TrenchMOS™ series. Obsolete product status. AEC-Q101 automotive qualification. Not recommended for new production due to obsolescence; suitable only for field replacement of existing AOB2918L installations where inventory is available.

Frequently Asked Questions (FAQ)

Q: Can IRFS4310TRLPBF directly replace AOB2918L in existing designs?

A: Yes. IRFS4310TRLPBF meets all mandatory equivalence criteria: 100V Vdss, TO-263-3 D2PAK package, N-Channel MOSFET, -55°C to 175°C operating range, and 10V gate drive compatibility. The 130A continuous current rating exceeds the 90A specification. Rds On at 7mOhm matches the AOB2918L specification exactly. No circuit modifications are required.

Q: What is the difference between IXFA180N10T2 and IXTA180N10T?

A: Both devices are rated for 180A continuous drain current at Tc with similar Rds On performance (6mOhm and 6.4mOhm respectively). The primary difference is the maximum gate-source voltage: IXFA180N10T2 is rated for ±20V, while IXTA180N10T is rated for ±30V. IXTA180N10T provides additional design margin for gate drive circuits. Both are active products with RoHS3 compliance.

Q: Why is STB100N10F7 not recommended as a primary substitute?

A: STB100N10F7 is rated for 80A continuous drain current at Tc, which is below the AOB2918L specification of 90A. While the device meets voltage, package, and temperature requirements, it cannot guarantee full performance in applications designed for 90A operation. STB100N10F7 is suitable only for designs where continuous current demand does not exceed 80A.

Q: Are all substitute parts RoHS3 compliant?

A: All active substitute parts listed (IRFS4310TRLPBF, IRFS4410ZTRLPBF, IXFA180N10T2, IXTA180N10T, PSMN7R0-100BS,118, and STB100N10F7) are RoHS3 compliant. BUK768R1-100E,118 is also RoHS3 compliant but is obsolete. The AOB2918L does not specify RoHS status.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge affects switching speed and gate drive circuit design. AOB2918L specifies 53nC at 10V. Substitutes with higher gate charge (IRFS4310TRLPBF at 250nC, IXFA180N10T2 at 185nC) require higher gate drive current or longer switching times. Substitutes with lower or comparable gate charge (IRFS4410ZTRLPBF at 120nC, PSMN7R0-100BS,118 at 125nC) provide faster switching with reduced gate drive requirements. Selection depends on gate driver capability and application switching frequency.

Q: Can I use PSMN7R0-100BS,118 in high-frequency switching applications?

A: PSMN7R0-100BS,118 has a gate charge of 125nC at 10V, which is higher than AOB2918L (53nC). This results in slower switching transitions and increased switching losses at high frequencies. For applications operating above 100kHz, IRFS4410ZTRLPBF (120nC) or IXFA180N10T2 (185nC) may be more suitable depending on frequency and thermal constraints. Thermal analysis is required to confirm suitability.

Q: What is the thermal advantage of IXFA180N10T2 over AOB2918L?

A: IXFA180N10T2 is rated for 480W power dissipation at Tc, compared to AOB2918L at 267W. This 80% increase in thermal capacity results from lower Rds On (6mOhm vs. 7mOhm) and higher current rating (180A vs. 90A). In applications operating at or near maximum current, IXFA180N10T2 provides superior thermal margin and reduced junction temperature rise, extending device lifetime and improving reliability.

Q: Are there package compatibility concerns when substituting these parts?

A: All substitute parts use TO-263-3 or D2PAK package variants, which are mechanically and thermally compatible with AOB2918L. Pinout is identical: Gate, Drain (tab), and Source. PCB footprints are interchangeable. No layout modifications are required. Verify that thermal management (heatsinking) is adequate for the substitute device's power dissipation rating in your specific application.

Q: Which substitute offers the best overall performance match to AOB2918L?

A: IRFS4310TRLPBF provides the closest electrical match: identical 100V Vdss, identical 7mOhm Rds On, comparable gate charge (250nC vs. 53nC), and active product status with RoHS3 compliance. For applications prioritizing low gate charge and fast switching, IRFS4410ZTRLPBF (120nC) is preferred. For applications requiring maximum thermal headroom, IXFA180N10T2 or IXTA180N10T are optimal.

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