AOB284L N-Channel 80V 16A/105A MOSFET Equivalent & Substitute Parts

Part Overview

The AOB284L is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Alpha & Omega Semiconductor Inc., rated for 80V drain-to-source voltage with continuous drain current of 16A at Ta (ambient temperature) and 105A at Tc (case temperature). The device is housed in a TO-263 (D2PAK) surface mount package and is designed for high-current switching applications requiring efficient thermal management.

The AOB284L is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and leverage active product lines from current manufacturers. Substitute devices maintain electrical compatibility within the specified parameter ranges while offering improved availability and potentially enhanced performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	80	V
Continuous Drain Current @ 25°C (Tc)	105	A
On-State Resistance (Rds On) @ 20A, 10V	4.3	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	3.3	V
Gate Charge (Qg) @ 10V	100	nC
Maximum Gate-Source Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 40V	5154	pF
Power Dissipation (Tc)	250	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the AOB284L are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Equal to or greater than 80V
Continuous Drain Current (Tc): Equal to or greater than 105A
On-State Resistance (Rds On): Comparable or lower values to maintain switching efficiency
Gate-Source Threshold Voltage (Vgs(th)): Within compatible drive voltage ranges
Maximum Gate-Source Voltage (Vgs): Equal to or greater than ±20V
Operating Temperature Range: Minimum -55°C to 175°C

Mechanical Compatibility Criteria:

Package Type: TO-263-3 (D2PAK) or equivalent surface mount packages
Mounting Type: Surface Mount
Compliance: ROHS3 Compliant, REACH Unaffected

Substitute parts are grouped into two categories:

Category 1: Direct 80V Substitutes (Vdss = 80V, Id ≥ 105A) These devices maintain the exact voltage rating of the AOB284L while meeting or exceeding current requirements. Parts in this category include BUK764R2-80E,118, BUK964R2-80E,118, PSMN4R4-80BS,118, PSMN5R0-80BS,118, STH130N8F7-2, and STH140N8F7-2.

Category 2: Higher Voltage Substitutes (Vdss ≥ 100V, Id ≥ 105A) These devices provide higher voltage ratings while maintaining or exceeding current specifications. Parts in this category include FDB047N10 and IPB120N10S405ATMA1. These are suitable for applications where voltage headroom is beneficial.

Category 3: Reduced Current Substitutes (Vdss = 80V, 80A ≤ Id < 105A) The IPB049N08N5ATMA1 provides 80A continuous current at Tc, which is lower than the AOB284L specification. This part is included for applications where full 105A current is not required.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Vgs Max (V)	Package	Status
AOB284L	Alpha & Omega Semiconductor	80	105	4.3 @ 20A, 10V	3.3 @ 250µA	100 @ 10V	±20	TO-263 (D2PAK)	Obsolete
BUK764R2-80E,118	Nexperia USA Inc.	80	120	4.2 @ 25A, 10V	4.0 @ 1mA	136 @ 10V	±20	D2PAK	Active
BUK964R2-80E,118	Nexperia USA Inc.	80	120	4.0 @ 25A, 10V	2.1 @ 1mA	123 @ 5V	±10	D2PAK	Active
FDB047N10	onsemi	100	120	4.7 @ 75A, 10V	4.5 @ 250µA	210 @ 10V	±20	TO-263 (D2PAK)	Active
IPB049N08N5ATMA1	Infineon Technologies	80	80	4.9 @ 80A, 10V	3.8 @ 66µA	53 @ 10V	±20	PG-TO263-3	Active
IPB120N10S405ATMA1	Infineon Technologies	100	120	5.0 @ 100A, 10V	3.5 @ 120µA	91 @ 10V	±20	PG-TO263-3	Active
PSMN4R4-80BS,118	Nexperia USA Inc.	80	100	4.5 @ 25A, 10V	4.0 @ 1mA	125 @ 10V	±20	D2PAK	Active
PSMN5R0-80BS,118	Nexperia USA Inc.	80	100	5.1 @ 25A, 10V	4.0 @ 1mA	101 @ 10V	±20	D2PAK	Active
STH130N8F7-2	STMicroelectronics	80	110	5.0 @ 55A, 10V	4.5 @ 250µA	60 @ 10V	±20	H2PAK-2	Active
STH140N8F7-2	STMicroelectronics	80	90	4.0 @ 45A, 10V	4.5 @ 250µA	96 @ 10V	±20	H2PAK-2	Active

Engineering Selection Recommendations

Primary Substitutes (Direct Equivalents):

BUK764R2-80E,118 and BUK964R2-80E,118 from Nexperia USA Inc. are the preferred direct substitutes. Both devices maintain the 80V Vdss rating, exceed the 105A continuous current requirement at Tc with 120A capability, and are classified as Active products. Both are AEC-Q101 qualified for automotive applications. BUK964R2-80E,118 offers lower gate charge (123 nC vs. 136 nC) and lower threshold voltage (2.1V vs. 4.0V), resulting in faster switching characteristics. BUK764R2-80E,118 provides slightly lower on-state resistance (4.2 mOhm vs. 4.0 mOhm at different current points).

Secondary Substitutes (Higher Voltage Rating):

FDB047N10 from onsemi and IPB120N10S405ATMA1 from Infineon Technologies provide 100V Vdss ratings with 120A continuous current capability. These devices are suitable for applications requiring additional voltage margin. FDB047N10 is part of the PowerTrench® series and is Active. IPB120N10S405ATMA1 is part of the OptiMOS™ series, is Active, and carries AEC-Q101 automotive qualification.

Alternative Substitutes (80V Rating, Reduced Current):

PSMN4R4-80BS,118 and PSMN5R0-80BS,118 from Nexperia USA Inc. provide 100A continuous current at Tc, which is lower than the AOB284L specification. These devices are suitable for applications where the full 105A current is not required. Both are Active products with comparable on-state resistance values.

STH130N8F7-2 from STMicroelectronics provides 110A continuous current at Tc, meeting the AOB284L specification. STH140N8F7-2 provides 90A continuous current and is suitable for reduced-current applications. Both are Active products in the STripFET™ series.

Reduced Current Alternative:

IPB049N08N5ATMA1 from Infineon Technologies provides 80A continuous current at Tc, which is below the AOB284L specification. This device is suitable only for applications where 80A maximum current is acceptable.

All recommended substitutes are ROHS3 compliant, REACH unaffected, and operate across the -55°C to 175°C temperature range.

Frequently Asked Questions (FAQ)

Q: Can BUK964R2-80E,118 directly replace AOB284L in all applications?

A: BUK964R2-80E,118 maintains the 80V Vdss rating and exceeds the 105A continuous current requirement with 120A capability. The device is electrically compatible. However, the maximum gate-source voltage is ±10V compared to the AOB284L's ±20V. Applications using gate drive voltages exceeding ±10V require circuit modification or selection of an alternative substitute with ±20V rating.

Q: What is the difference between D2PAK and H2PAK-2 packages?

A: Both D2PAK and H2PAK-2 are surface mount packages in the TO-263 family with identical pin configurations (2 leads plus tab). H2PAK-2 is a variant designation used by STMicroelectronics. Mechanical compatibility is maintained for PCB layout purposes. Thermal performance may differ slightly due to package construction variations; refer to manufacturer datasheets for specific thermal resistance values.

Q: Why do some substitutes have higher Vdss ratings (100V vs. 80V)?

A: Higher Vdss ratings provide additional voltage margin in applications subject to transient overvoltage conditions. FDB047N10 and IPB120N10S405ATMA1 are suitable for designs where 100V headroom is beneficial. For applications strictly limited to 80V operation, direct 80V substitutes are preferred to minimize parasitic capacitance and gate charge.

Q: Is IPB049N08N5ATMA1 suitable as a substitute?

A: IPB049N08N5ATMA1 provides only 80A continuous current at Tc, which is below the AOB284L specification of 105A. This device is suitable only for applications where the maximum required current does not exceed 80A. For full 105A capability, select substitutes from the primary or secondary categories.

Q: What is the significance of AEC-Q101 qualification?

A: AEC-Q101 qualification indicates the device meets automotive industry reliability and quality standards. BUK764R2-80E,118, BUK964R2-80E,118, and IPB120N10S405ATMA1 carry this qualification. For non-automotive applications, this qualification is not required but indicates enhanced reliability testing.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the device. Lower gate charge values (e.g., IPB049N08N5ATMA1 at 53 nC) result in faster switching and lower gate drive power dissipation. Higher values (e.g., FDB047N10 at 210 nC) require more gate drive energy. Circuit gate drive capability must accommodate the selected device's gate charge specification.

Q: Are all substitutes available in tape and reel packaging?

A: Most substitutes are available in tape and reel (TR) packaging for automated assembly. FDB047N10 is available in cut tape (CT) and Digi-Reel® packaging. STH130N8F7-2 and STH140N8F7-2 packaging specifications are not detailed in the provided data. Confirm packaging availability with the supplier before design finalization.

Q: What is the impact of on-state resistance (Rds On) differences?

A: On-state resistance directly affects power dissipation during conduction. Lower Rds On values reduce I²R losses. BUK964R2-80E,118 at 4.0 mOhm and STH140N8F7-2 at 4.0 mOhm provide superior efficiency compared to the AOB284L at 4.3 mOhm. For high-current applications, lower Rds On values reduce thermal management requirements.

Q: Can substitutes be mixed in the same design?

A: Substitutes should not be mixed in parallel or in the same circuit without careful analysis. Differences in threshold voltage, gate charge, and on-state resistance can result in unequal current sharing and thermal stress. If multiple devices are required, select a single substitute part number for consistency.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message