AOB260L N-Channel 60V MOSFET Equivalent & Substitute Parts

Part Overview

The AOB260L is an N-Channel 60V MOSFET manufactured by Alpha & Omega Semiconductor Inc., housed in a TO-263 (D2PAK) surface mount package. This device is rated for 20A continuous drain current at 25°C (Ta) and 140A at case temperature (Tc), with a maximum on-resistance of 2.2mOhm at 20A and 10V gate-source voltage. The AOB260L is classified as "Not For New Designs," indicating it has reached end-of-life status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support existing applications requiring this component specification.

Key Parameters

Parameter	AOB260L Value	Unit
FET Type	N-Channel	—
Drain-Source Voltage (Vdss)	60	V
Continuous Drain Current @ 25°C (Ta)	20	A
Continuous Drain Current @ Case (Tc)	140	A
On-Resistance (Rds On) @ 20A, 10V	2.2	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	3.2	V
Gate Charge (Qg) @ 10V	180	nC
Input Capacitance (Ciss) @ 30V	14200	pF
Power Dissipation (Ta)	1.9	W
Power Dissipation (Tc)	330	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263 (D2PAK)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the AOB260L is determined by strict alignment of electrical and mechanical parameters. All substitute parts must meet the following criteria:

Mandatory Matching Parameters:

FET Type: N-Channel
Drain-Source Voltage (Vdss): 60V minimum
Package Type: TO-263 (D2PAK) surface mount
Mounting Type: Surface mount
RoHS Compliance: ROHS3 Compliant
Operating Temperature Range: Minimum -55°C to 175°C

Performance Parameters for Substitution:

Continuous Drain Current (Tc): 120A or greater (exceeds AOB260L 140A Tc rating)
On-Resistance (Rds On): 2.0mOhm to 3.2mOhm at 10V gate drive
Gate-Source Threshold Voltage: 2.1V to 4.5V
Power Dissipation (Tc): 188W or greater

Substitute parts are grouped into two categories: direct manufacturer equivalents from Alpha & Omega Semiconductor Inc., and cross-manufacturer alternatives from Nexperia USA Inc., Infineon Technologies, and onsemi. All listed substitutes maintain electrical compatibility within the specified voltage and current ratings while accommodating variations in on-resistance, gate charge, and thermal performance.

Parameter Comparison

Parameter	AOB260L	AOB66616L	BUK762R4-60E,118	BUK762R6-60E,118	BUK962R5-60E,118	BUK962R8-60E,118	FDB024N06	IPB019N06L3GATMA1	IPB120N06S402ATMA2	IPB120N06S4H1ATMA2	PSMN1R7-60BS,118
Manufacturer	Alpha & Omega	Alpha & Omega	Nexperia	Nexperia	Nexperia	Nexperia	onsemi	Infineon	Infineon	Infineon	Nexperia
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	60	60	60	60	60	60	60	60	60	60	60
Id @ 25°C Ta (A)	20	38.5	—	—	—	—	—	—	—	—	—
Id @ Tc (A)	140	140	120	120	120	120	120	120	120	120	120
Rds On @ 10V (mOhm)	2.2	3.2	2.4	2.6	2.5	2.5	2.4	1.9	2.8	2.4	2.0
Vgs(th) (V)	3.2	3.4	4.0	4.0	2.1	2.1	4.5	2.2	4.0	4.0	4.0
Qg @ 10V (nC)	180	60	158	140	120	92	226	166	195	270	137
Ciss @ 25-30V (pF)	14200	2870	11180	10170	17450	15600	14885	28000	15750	21900	9997
Power Dissipation Tc (W)	330	125	357	324	357	324	395	250	188	250	306
Operating Temp Range (°C)	-55 to 175	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK	D2PAK	D2PAK	D2PAK	TO-263 (D2PAK)	PG-TO263-3	PG-TO263-3-2	PG-TO263-3-2	D2PAK
Product Status	Not For New Designs	Active	Active	Active	Active	Obsolete	Last Time Buy	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: AOB66616L

The AOB66616L is the manufacturer-recommended equivalent from Alpha & Omega Semiconductor Inc. This part maintains the same 60V Vdss rating and TO-263 (D2PAK) package as the AOB260L. The AOB66616L is classified as Active product status, ensuring long-term availability and supply chain support. It delivers higher continuous drain current (38.5A at Ta) compared to the AOB260L (20A at Ta), providing improved thermal performance and design margin. The on-resistance of 3.2mOhm at 20A and 10V is within acceptable tolerance of the original 2.2mOhm specification. Gate charge is significantly reduced to 60nC, improving switching efficiency. Operating temperature range extends to 150°C, which is acceptable for most applications requiring -55°C to 175°C operation, though the upper limit is 25°C lower than the original part.

Secondary Recommendations: Nexperia TrenchMOS™ Series

The BUK762R4-60E,118, BUK762R6-60E,118, BUK962R5-60E,118, and PSMN1R7-60BS,118 are active Nexperia products offering superior electrical performance. These parts deliver 120A continuous drain current at case temperature, significantly exceeding the AOB260L specification. On-resistance values range from 2.0mOhm to 2.6mOhm at 10V, meeting or exceeding the original 2.2mOhm specification. All maintain the 60V Vdss rating and TO-263/D2PAK package compatibility. Operating temperature range extends to 175°C, matching the original specification. The BUK762R4-60E,118 and BUK762R6-60E,118 are AEC-Q101 qualified for automotive applications. The BUK962R8-60E,118 is classified as Obsolete and should be avoided for new applications despite its electrical compatibility.

Tertiary Recommendations: Infineon OptiMOS™ Series

The IPB019N06L3GATMA1, IPB120N06S402ATMA2, and IPB120N06S4H1ATMA2 are active Infineon products offering excellent on-resistance performance. The IPB019N06L3GATMA1 delivers the lowest on-resistance at 1.9mOhm at 100A and 10V, with 120A continuous drain current and 250W power dissipation at case temperature. The IPB120N06S4H1ATMA2 provides 2.4mOhm on-resistance and is AEC-Q101 qualified for automotive applications. All three parts maintain 60V Vdss, TO-263 package compatibility, and -55°C to 175°C operating temperature range. Higher input capacitance values (15750pF to 28000pF) may require gate drive circuit optimization compared to the original 14200pF specification.

Alternative: onsemi PowerTrench® FDB024N06

The FDB024N06 is classified as Last Time Buy, indicating limited availability. While it meets electrical specifications with 120A continuous drain current, 2.4mOhm on-resistance at 75A and 10V, and 395W power dissipation at case temperature, the Last Time Buy status restricts its use to applications requiring existing inventory support only. New designs should not select this part.

Frequently Asked Questions (FAQ)

Q: Can the AOB260L be directly replaced with the AOB66616L?

A: Yes. The AOB66616L is the manufacturer-recommended equivalent from Alpha & Omega Semiconductor Inc. Both parts share identical 60V Vdss rating, TO-263 (D2PAK) package, and surface mount configuration. The AOB66616L is Active product status, ensuring supply availability. The primary difference is higher continuous drain current (38.5A at Ta versus 20A at Ta) and reduced gate charge (60nC versus 180nC), both favorable for thermal performance and switching efficiency. The upper operating temperature limit is 150°C versus 175°C for the original part; verify this meets application requirements.

Q: What is the difference between Ta and Tc current ratings?

A: Ta represents continuous drain current at ambient temperature (25°C), while Tc represents continuous drain current at case temperature (25°C). The Tc rating is typically higher because it reflects the device's capability when mounted on a properly designed PCB with adequate thermal management. The AOB260L is rated 20A at Ta and 140A at Tc. Substitute parts are rated 120A to 140A at Tc, providing equivalent or superior thermal performance.

Q: Are all substitute parts compatible with the same PCB layout?

A: All substitute parts use TO-263 (D2PAK) or equivalent package variants (PG-TO263-3, PG-TO263-3-2) with identical pin configurations and lead spacing. PCB layouts designed for TO-263 (D2PAK) accommodate all listed substitutes without modification. Thermal pad dimensions and via patterns should be verified against specific manufacturer datasheets to optimize heat dissipation for higher-current devices.

Q: Which substitute part offers the lowest on-resistance?

A: The IPB019N06L3GATMA1 offers the lowest on-resistance at 1.9mOhm at 100A and 10V gate drive. This represents a 14% improvement over the AOB260L specification of 2.2mOhm at 20A and 10V. Lower on-resistance reduces power dissipation and heat generation, improving overall circuit efficiency. However, higher input capacitance (28000pF versus 14200pF) may require gate drive circuit adjustment to maintain switching speed.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge determines the energy required to switch the MOSFET on and off. The AOB260L requires 180nC at 10V, while substitutes range from 60nC to 270nC. Lower gate charge (AOB66616L at 60nC, BUK962R8-60E,118 at 92nC) reduces switching losses and allows faster switching frequencies. Higher gate charge (IPB120N06S4H1ATMA2 at 270nC) may require stronger gate drive circuits but does not prevent substitution if the existing gate driver has sufficient current capability.

Q: Are automotive-qualified parts required for this application?

A: Automotive qualification (AEC-Q101) is required only if the application operates in automotive environments or meets automotive reliability standards. The BUK762R4-60E,118, BUK762R6-60E,118, BUK962R5-60E,118, IPB120N06S402ATMA2, and IPB120N06S4H1ATMA2 carry AEC-Q101 qualification. Non-automotive applications may select any Active product status part from the substitute list.

Q: Why is the BUK962R8-60E,118 listed if it is Obsolete?

A: The BUK962R8-60E,118 is included for reference and inventory management purposes only. It meets all electrical specifications and is electrically compatible with the AOB260L. However, Obsolete product status indicates no new production and limited remaining inventory. This part should be used only to support existing applications with available stock; new designs must select Active product status alternatives.

Q: What is the impact of different Vgs(th) threshold voltages?

A: Gate-source threshold voltage (Vgs(th)) determines the minimum gate voltage required to turn the MOSFET on. The AOB260L specifies 3.2V at 250µA. Substitutes range from 2.1V to 4.5V. Lower threshold voltages (BUK962R5-60E,118 and BUK962R8-60E,118 at 2.1V, IPB019N06L3GATMA1 at 2.2V) enable operation with lower gate drive voltages, reducing power consumption in gate drive circuits. Higher threshold voltages (FDB024N06 at 4.5V) require higher gate drive voltages but provide better noise immunity. Verify gate driver output voltage compatibility with selected substitute part.

Q: Can substitutes with lower power dissipation ratings be used?

A: The AOB66616L has lower power dissipation at case temperature (125W versus 330W for the AOB260L) due to higher on-resistance and different thermal characteristics. This does not prevent substitution if the application's actual power dissipation remains within the substitute part's rating. Calculate expected power dissipation using P = I²Rds(on) and verify it does not exceed the substitute part's maximum rating. If actual dissipation exceeds the substitute's rating, select a part with higher power dissipation capability.

Q: Is RoHS compliance maintained across all substitutes?

A: Yes. All listed substitute parts are ROHS3 Compliant, matching the AOB260L specification. REACH status is Unaffected for all parts, indicating no regulatory restrictions on use or supply.

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