AOB2502L N-Channel 150V 106A MOSFET Equivalent & Substitute Parts

Part Overview

The AOB2502L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 150V drain-to-source voltage with 106A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and dissipates up to 277W at case temperature. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

AOB2502L

Alpha & Omega Semiconductor Inc.In Stock: 1421AOB2502L Datasheet

Current PartRFQ

FDB082N15A

onsemiIn Stock: 3468FDB082N15A Datasheet

MFR RecommendedRFQ

FDB110N15A

onsemiIn Stock: 6963FDB110N15A Datasheet

MFR RecommendedRFQ

SUM80090E-GE3

Vishay SiliconixIn Stock: 803SUM80090E-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the AOB2502L is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 150V
• Package Type: Must be TO-263 (D2PAK) surface mount
• FET Type: Must be N-Channel MOSFET
• Technology: Must be Metal Oxide (MOSFET)
• Mounting: Must be surface mount
• RoHS Compliance: Must be ROHS3 compliant

Performance Parameters (Allowable Ranges):

• Continuous Drain Current (Id): Substitute must meet or exceed 106A
• On-State Resistance (Rds On): Lower or equal values are acceptable
• Gate Threshold Voltage (Vgs(th)): Must be within ±20V gate voltage specification
• Power Dissipation: Equal or greater capacity is acceptable
• Operating Temperature: Extended range acceptable (minimum -55°C to 150°C)

All three substitute parts (FDB082N15A, FDB110N15A, SUM80090E-GE3) meet these mandatory criteria and fall within allowable performance parameters.

Parameter Comparison

Engineering Selection Recommendations

FDB082N15A (onsemi PowerTrench®)

The FDB082N15A is an active product with higher continuous drain current (117A versus 106A) and improved on-state resistance (8.2mOhm versus 10.7mOhm). Extended operating temperature range (-55°C to 175°C) provides additional thermal margin. ROHS3 compliance and active product status ensure long-term availability. Higher gate charge (84nC) requires consideration in high-frequency switching applications.

FDB110N15A (onsemi PowerTrench®)

The FDB110N15A is an active product with continuous drain current of 92A, which is below the AOB2502L specification of 106A. On-state resistance (11mOhm) is comparable to the original part. This substitute is suitable for applications where the 92A current rating is sufficient and cost optimization is prioritized. Extended operating temperature range and ROHS3 compliance are maintained. Active product status ensures procurement continuity.

SUM80090E-GE3 (Vishay Siliconix ThunderFET®)

The SUM80090E-GE3 is an active product with the highest continuous drain current (128A) and power dissipation (375W) among all substitutes. Superior on-state resistance (9mOhm) and extended operating temperature range (-55°C to 175°C) support demanding thermal environments. ROHS3 compliance is confirmed. Higher gate charge (95nC) and input capacitance (3425pF) require evaluation in gate drive circuit design.

Selection Basis:

All three substitutes maintain mandatory electrical and mechanical compatibility with the obsolete AOB2502L. Selection should be based on application-specific current requirements, thermal dissipation needs, and gate drive circuit capabilities. All substitutes are active products with confirmed ROHS3 compliance, ensuring regulatory compliance and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can FDB110N15A be used as a direct replacement for AOB2502L if the application requires 106A continuous current?

A: No. The FDB110N15A is rated for 92A continuous drain current, which is below the 106A requirement of the AOB2502L. Use FDB082N15A or SUM80090E-GE3 for applications requiring 106A or higher current handling.

Q: What is the impact of higher gate charge in FDB082N15A and SUM80090E-GE3?

A: Higher gate charge (84nC and 95nC respectively, versus 60nC in AOB2502L) increases the energy required to switch the gate and may increase switching losses in high-frequency applications. Gate drive circuit design must accommodate the higher charge requirement.

Q: Are all substitute parts available in the same packaging as AOB2502L?

A: Yes. All three substitutes use TO-263 (D2PAK) surface mount packaging, identical to the AOB2502L. Mechanical compatibility with existing PCB layouts is maintained.

Q: Does the extended operating temperature range of substitute parts affect compatibility?

A: No. Extended operating temperature ranges (-55°C to 175°C in substitutes versus -55°C to 150°C in AOB2502L) provide additional thermal margin and do not reduce compatibility. Applications operating within the original temperature range remain fully compatible.

Q: Are all substitute parts RoHS compliant?

A: Yes. All three substitute parts (FDB082N15A, FDB110N15A, SUM80090E-GE3) are ROHS3 compliant, matching the compliance status of the obsolete AOB2502L.

Q: What is the difference between the onsemi PowerTrench® and Vishay ThunderFET® technologies?

A: Both are proprietary MOSFET process technologies that optimize on-state resistance and thermal performance. Selection between them should be based on application-specific requirements for current handling, power dissipation, and gate drive characteristics rather than technology designation alone.

Q: Can multiple substitute parts be used interchangeably in the same application?

A: Interchangeability depends on application requirements. FDB082N15A and SUM80090E-GE3 are suitable for 106A+ applications. FDB110N15A is suitable only for applications requiring 92A or less. Gate drive circuits must be evaluated for compatibility with each substitute's gate charge specification.