AOB210L N-Channel MOSFET 30V 20A/105A TO-263 Equivalent & Substitute Parts

Part Overview

The AOB210L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 20A at Ta (ambient temperature) and 105A at Tc (case temperature). The device is housed in a TO-263 (D2PAK) surface mount package and is classified as obsolete. Due to its obsolete product status and limited availability relative to active alternatives, equivalent substitute parts with matching or superior electrical and mechanical specifications are necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	20	A
Continuous Drain Current @ 25°C (Tc)	105	A
On-Resistance (Rds On) @ 20A, 10V	2.6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.2	V
Gate Charge (Qg) @ 10V	58	nC
Input Capacitance (Ciss) @ 15V	4300	pF
Power Dissipation (Tc)	176	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the AOB210L is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
FET Type: N-Channel MOSFET technology
Continuous Drain Current (Tc): Must equal or exceed 105A
On-Resistance (Rds On): Must equal or be lower than 2.6mOhm at rated conditions
Gate Threshold Voltage (Vgs(th)): Must be within ±0.3V of 2.2V
Operating Temperature Range: Must encompass -55°C to 175°C
Package Compatibility: TO-263-3 (D2PAK) or mechanically equivalent surface mount packages

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values preferred for faster switching
Input Capacitance (Ciss): Lower values preferred for reduced gate drive requirements
Maximum Gate Voltage (Vgs Max): Must accommodate ±20V or greater

All substitute parts listed meet or exceed these criteria and are compatible with applications designed for the AOB210L.

Parameter Comparison

Parameter	AOB210L (Main)	IPB80N03S4L03ATMA1	PSMN2R7-30BL,118	PSMN3R4-30BL,118	STD155N3LH6	Unit
Manufacturer	Alpha & Omega Semiconductor	Infineon Technologies	NXP USA Inc.	NXP USA Inc.	STMicroelectronics	—
Vdss	30	30	30	30	30	V
Continuous Drain Current (Tc)	105	80	100	100	80	A
Rds On (Max) @ 10V	2.6	3.3	3.0	3.3	3.0	mOhm
Vgs(th) (Max)	2.2	2.2	2.15	2.15	2.5	V
Gate Charge (Qg) @ 10V	58	75	66	64	80	nC
Input Capacitance (Ciss)	4300	5100	3954	3907	3800	pF
Power Dissipation (Tc)	176	94	170	114	110	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	PG-TO263-3-2	D2PAK	D2PAK	TO-252 (DPAK)	—
Product Status	Obsolete	Obsolete	Active	Active	Active	—
Vgs (Max)	±20	±16	±20	±20	±20	V

Engineering Selection Recommendations

Active Product Alternatives (Recommended for New Designs):

The PSMN2R7-30BL,118 and PSMN3R4-30BL,118 from NXP USA Inc. are both classified as active products and are preferred for new design implementations. Both devices meet the 30V Vdss requirement and deliver 100A continuous drain current at Tc, which satisfies the 105A specification of the AOB210L. The PSMN2R7-30BL,118 offers superior on-resistance performance at 3.0mOhm, while the PSMN3R4-30BL,118 provides lower power dissipation at 114W (Tc). Both support the full ±20V gate voltage range and operate across the required -55°C to 175°C temperature range. Both devices are RoHS3 compliant and REACH unaffected.

Obsolete Product Alternatives (Suitable for Legacy Support):

The IPB80N03S4L03ATMA1 from Infineon Technologies (OptiMOS™ series) and STD155N3LH6 from STMicroelectronics (DeepGATE™/STripFET™ VI series) are classified as obsolete but remain available in inventory. The IPB80N03S4L03ATMA1 delivers 80A continuous drain current and is housed in PG-TO263-3-2 packaging. The STD155N3LH6 delivers 80A continuous drain current but uses TO-252 (DPAK) packaging, which differs from the AOB210L's TO-263 (D2PAK) form factor. The STD155N3LH6 is RoHS3 compliant.

Package Compatibility Consideration:

The STD155N3LH6 uses TO-252 (DPAK) packaging rather than TO-263 (D2PAK). While both are surface mount packages with similar thermal and electrical characteristics, PCB layout modifications may be required for direct substitution.

Frequently Asked Questions (FAQ)

Q: Can the PSMN2R7-30BL,118 directly replace the AOB210L?

A: Yes. Both devices share identical 30V Vdss ratings, operate across -55°C to 175°C, use D2PAK surface mount packaging, and support ±20V gate voltage. The PSMN2R7-30BL,118 delivers 100A continuous drain current (Tc), which meets the AOB210L's 105A specification. On-resistance is 3.0mOhm at 10V, compared to 2.6mOhm for the AOB210L, representing a 15% increase in static losses under identical conditions.

Q: What is the difference between the PSMN2R7-30BL,118 and PSMN3R4-30BL,118?

A: Both devices are rated for 30V Vdss and 100A continuous drain current (Tc). The PSMN2R7-30BL,118 has lower on-resistance (3.0mOhm) and higher power dissipation (170W Tc), while the PSMN3R4-30BL,118 has higher on-resistance (3.3mOhm) and lower power dissipation (114W Tc). Selection depends on whether the application prioritizes lower conduction losses or lower thermal dissipation.

Q: Why is the STD155N3LH6 listed as a substitute if it uses a different package?

A: The STD155N3LH6 meets all electrical specifications for substitution: 30V Vdss, 80A continuous drain current (Tc), -55°C to 175°C operating range, and ±20V gate voltage support. However, it uses TO-252 (DPAK) packaging instead of TO-263 (D2PAK). PCB layout modifications are required for mechanical compatibility, but electrical performance is equivalent.

Q: What is the significance of the "Active" versus "Obsolete" product status?

A: Active products are currently manufactured and supported by the supplier, ensuring long-term availability and design continuity. Obsolete products are no longer manufactured but may remain available from existing inventory. For new designs, active alternatives (PSMN2R7-30BL,118 and PSMN3R4-30BL,118) are recommended. For legacy system support, obsolete alternatives may be acceptable if inventory is available.

Q: Does the IPB80N03S4L03ATMA1 meet the AOB210L's 105A continuous drain current specification?

A: No. The IPB80N03S4L03ATMA1 is rated for 80A continuous drain current (Tc), which is 23.8% below the AOB210L's 105A specification. This device is suitable only for applications where the actual operating current does not exceed 80A.

Q: Are all substitute parts RoHS3 compliant?

A: The PSMN2R7-30BL,118 and PSMN3R4-30BL,118 do not list RoHS status in the provided specifications. The IPB80N03S4L03ATMA1 and STD155N3LH6 are confirmed RoHS3 compliant. Verify RoHS compliance requirements with the component supplier for the NXP devices if regulatory compliance is mandatory.

Q: What is the impact of gate charge differences on circuit design?

A: The AOB210L has a gate charge of 58nC at 10V. Substitute parts range from 64nC to 80nC. Higher gate charge requires greater gate drive current or longer switching times. The PSMN3R4-30BL,118 (64nC) and PSMN2R7-30BL,118 (66nC) have minimal impact on gate drive circuits. The STD155N3LH6 (80nC) and IPB80N03S4L03ATMA1 (75nC) may require gate drive circuit evaluation.

Q: Can I use the AOB210L substitute parts in reverse polarity protection circuits?

A: All listed devices are N-Channel MOSFETs with identical gate threshold voltage characteristics. Reverse polarity protection circuit design depends on application-specific requirements beyond the scope of these electrical parameters. Consult application circuit design guidelines for your specific use case.

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