AO6601 MOSFET N/P-Channel 30V 3.4A Equivalent & Substitute Parts

Part Overview

The AO6601 is an active complementary N and P-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain currents of 3.4A (N-channel) and 2.3A (P-channel). The device features logic level gate operation and is packaged in a 6-TSOP surface mount configuration. This part is currently in active production status with 210,100 units in stock inventory.

Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters while maintaining compatibility with the specified package class and operating conditions. Substitutes enable design flexibility, supply chain alternatives, and performance optimization within the same functional category.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C - N-Channel	3.4	A
Continuous Drain Current (Id) @ 25°C - P-Channel	2.3	A
On-Resistance (Rds On) @ Id, Vgs	60 mOhm @ 3.4A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	1.5	V @ 250µA
Gate Charge (Qg) @ Vgs	12	nC @ 10V
Input Capacitance (Ciss) @ Vds	285	pF @ 15V
Maximum Power Dissipation	1.15	W
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	N and P-Channel Complementary	—
FET Feature	Logic Level Gate	—
Package Type	6-TSOP (SC-74, SOT-457)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the AO6601 are qualified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-source voltage (Vdss) equal to or greater than 30V
Continuous drain current (Id) equal to or greater than the specified channel currents (3.4A N-channel, 2.3A P-channel)
On-resistance (Rds On) equal to or lower than 60 mOhm at rated conditions
Gate threshold voltage (Vgs(th)) compatible with logic level gate operation (≤ 1.5V @ 250µA)
Operating temperature range spanning -55°C to 150°C
N and P-channel complementary configuration
Surface mount packaging in TSOP or equivalent compact form factor
RoHS3 compliance and MSL 1 rating

Substitutes Identified:

DMG6601LVT-7 (Diodes Incorporated) – Direct electrical equivalent with enhanced current ratings (3.8A N-channel, 2.5A P-channel) and improved on-resistance (55 mOhm). Package: TSOT-26 (SOT-23-6 Thin). Active product status.
DMG6602SVT-7 (Diodes Incorporated) – Electrical match with identical drain current (3.4A N-channel, 2.8A P-channel) and on-resistance (60 mOhm). Package: TSOT-26 (SOT-23-6 Thin). Not for new designs status.
FDC6327C (onsemi) – Lower voltage rating (20V Vdss) with reduced current capability (2.7A N-channel, 1.9A P-channel). Suitable for applications with lower voltage requirements. Package: SuperSOT-6. Active product status.
SI3590DV-T1-E3 (Vishay Siliconix) – Voltage-rated equivalent (30V Vdss) with reduced current capability (2.5A N-channel, 1.7A P-channel). Package: 6-TSOP. Active product status.

Parameter Comparison

Parameter	AO6601	DMG6601LVT-7	DMG6602SVT-7	FDC6327C	SI3590DV-T1-E3
Manufacturer	Alpha & Omega Semiconductor	Diodes Incorporated	Diodes Incorporated	onsemi	Vishay Siliconix
Vdss (V)	30	30	30	20	30
Id N-Channel (A)	3.4	3.8	3.4	2.7	2.5
Id P-Channel (A)	2.3	2.5	2.8	1.9	1.7
Rds On (mOhm)	60 @ 3.4A, 10V	55 @ 3.4A, 10V	60 @ 3.1A, 10V	80 @ 2.7A, 4.5V	77 @ 3A, 4.5V
Vgs(th) (V)	1.5 @ 250µA	1.5 @ 250µA	2.3 @ 250µA	1.5 @ 250µA	1.5 @ 250µA
Gate Charge (nC)	12 @ 10V	12.3 @ 10V	13 @ 10V	4.5 @ 4.5V	4.5 @ 4.5V
Input Capacitance (pF)	285 @ 15V	422 @ 15V	400 @ 15V	325 @ 10V	— (not specified)
Power Max (W)	1.15	0.85	0.84	0.70	0.83
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	6-TSOP	TSOT-26	TSOT-26	SuperSOT-6	6-TSOP
Product Status	Active	Active	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

For Direct Replacement (Preferred):

The DMG6601LVT-7 (Diodes Incorporated) is the primary recommended substitute. It maintains 30V voltage rating, exceeds the AO6601 drain current specifications (3.8A N-channel vs. 3.4A, 2.5A P-channel vs. 2.3A), and delivers improved on-resistance performance (55 mOhm vs. 60 mOhm). The device is in active production status with full RoHS3 compliance and MSL 1 rating. Package compatibility is maintained within the TSOP family (TSOT-26 vs. 6-TSOP).

For Equivalent Performance:

The DMG6602SVT-7 (Diodes Incorporated) provides electrical equivalence with identical drain current and on-resistance specifications. However, this part carries a "Not For New Designs" product status, limiting its suitability for new development projects. It remains available for legacy system support and maintenance applications.

For Lower Voltage Applications:

The FDC6327C (onsemi) is suitable only for applications where the 30V voltage requirement can be reduced to 20V. This part delivers reduced current capability (2.7A N-channel, 1.9A P-channel) and higher on-resistance (80 mOhm). It is in active production status with full compliance certifications. The SuperSOT-6 package is compatible with TSOP footprints in compact designs.

For Voltage-Matched Alternatives:

The SI3590DV-T1-E3 (Vishay Siliconix) maintains the 30V voltage rating and 6-TSOP package format. Current capability is reduced (2.5A N-channel, 1.7A P-channel) compared to the AO6601. This part is in active production status with full RoHS3 compliance and is suitable for applications with lower current demands.

Compliance and Certification:

All identified substitutes maintain ROHS3 compliance and MSL 1 (unlimited moisture sensitivity) ratings, ensuring compatibility with standard manufacturing and storage protocols. All parts operate across the full -55°C to 150°C temperature range.

Frequently Asked Questions (FAQ)

Q: Can the DMG6601LVT-7 be used as a direct drop-in replacement for the AO6601?

A: The DMG6601LVT-7 is electrically compatible and exceeds AO6601 performance specifications. Both devices feature 30V Vdss, logic level gate operation, and complementary N/P-channel configuration. The TSOT-26 package (SOT-23-6 Thin) is compatible with 6-TSOP footprints in most PCB layouts. Verify footprint compatibility with your specific board design before implementation.

Q: What is the difference between the DMG6601LVT-7 and DMG6602SVT-7?

A: Both are Diodes Incorporated products with 30V Vdss and similar on-resistance (55 mOhm vs. 60 mOhm). The DMG6601LVT-7 offers higher current ratings (3.8A N-channel, 2.5A P-channel) and is in active production. The DMG6602SVT-7 has identical drain current to the AO6601 (3.4A N-channel, 2.8A P-channel) but carries a "Not For New Designs" status, making it unsuitable for new product development.

Q: Why does the FDC6327C have a lower voltage rating (20V vs. 30V)?

A: The FDC6327C is designed for lower voltage applications and is not a full equivalent to the AO6601. It is suitable only for designs where the maximum operating voltage is 20V or lower. Using this part in a 30V application would result in device failure due to voltage overstress.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All identified substitutes (DMG6601LVT-7, DMG6602SVT-7, FDC6327C, and SI3590DV-T1-E3) are ROHS3 compliant with MSL 1 (unlimited) moisture sensitivity ratings, matching the AO6601 compliance profile.

Q: What is the significance of the "Not For New Designs" status on the DMG6602SVT-7?

A: This designation indicates that the manufacturer (Diodes Incorporated) is not recommending this part for new product designs. While the part remains available and functional, it is intended for legacy system support and maintenance only. For new development projects, the DMG6601LVT-7 or SI3590DV-T1-E3 are preferred alternatives.

Q: How do the package types differ between substitutes?

A: The AO6601 uses 6-TSOP (SC-74, SOT-457) packaging. The DMG6601LVT-7 and DMG6602SVT-7 use TSOT-26 (SOT-23-6 Thin), which is compatible with TSOP footprints. The FDC6327C uses SuperSOT-6, also compatible with compact TSOP layouts. The SI3590DV-T1-E3 maintains the 6-TSOP package format. Verify PCB footprint compatibility before selecting a substitute.

Q: What are the key electrical parameters that determine substitutability?

A: Substitutability is determined by: (1) Drain-to-source voltage (Vdss) equal to or exceeding 30V, (2) Continuous drain current (Id) meeting or exceeding 3.4A (N-channel) and 2.3A (P-channel), (3) On-resistance (Rds On) equal to or lower than 60 mOhm, (4) Gate threshold voltage (Vgs(th)) compatible with logic level operation (≤ 1.5V), (5) Complementary N/P-channel configuration, and (6) Operating temperature range spanning -55°C to 150°C.

Q: Can I use the SI3590DV-T1-E3 if my application requires 3.4A continuous drain current?

A: The SI3590DV-T1-E3 is rated for 2.5A N-channel continuous drain current, which is below the AO6601 specification of 3.4A. Using this part in an application requiring 3.4A would result in thermal stress and potential device failure. The DMG6601LVT-7 (3.8A rating) is the appropriate choice for applications requiring the full 3.4A specification.

Q: Are there any gate drive voltage differences between the AO6601 and its substitutes?

A: The AO6601, DMG6601LVT-7, FDC6327C, and SI3590DV-T1-E3 all feature logic level gate operation with Vgs(th) of 1.5V @ 250µA, ensuring compatibility with standard 3.3V and 5V logic gate drivers. The DMG6602SVT-7 has a higher Vgs(th) of 2.3V @ 250µA, which may require different gate drive considerations in some applications.

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