AO5800E Equivalent & Substitute Parts

Part Overview

The AO5800E is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc., designed for surface mount applications in the SC-89-6 package. This device features a 60V drain-to-source voltage rating and 400mW maximum power dissipation, with logic level gate operation suitable for general-purpose switching applications.

The AO5800E is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for legacy systems or new designs requiring compatible performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Configuration	2 N-Channel (Dual)	—
FET Feature	Logic Level Gate	—
Rds On (Max) @ Id, Vgs	1.6 Ohm @ 400mA, 10V	Ω
Vgs(th) (Max) @ Id	2.5V @ 250µA	V
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 30V	pF
Power - Max	400	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	SOT-563, SOT-666	—
Mounting Type	Surface Mount	—
Technology	MOSFET (Metal Oxide)	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the AO5800E is determined by strict electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 60V
Configuration: Must be 2 N-Channel (Dual) MOSFET array
FET Feature: Must support Logic Level Gate operation
Gate Threshold Voltage (Vgs(th)): Must be compatible with 2.5V @ 250µA specification
On-State Resistance (Rds On): Must not exceed 1.6 Ohm @ 10V gate voltage
Input Capacitance (Ciss): Must not exceed 50pF at specified voltage
Power Dissipation: Must support minimum 400mW operation

Mechanical Compatibility Criteria:

Package Type: Must be SOT-563 or SOT-666 surface mount package
Mounting Type: Must be surface mount compatible
Moisture Sensitivity Level: Must be MSL 1 or equivalent

All substitute parts listed meet these criteria and are electrically and mechanically interchangeable with the AO5800E within the specified parameter ranges.

Parameter Comparison

Parameter	AO5800E	2N7002BKV,115	2N7002PV,115	DMG1026UV-7	NTZD5110NT1G	SI1026X-T1-GE3
Manufacturer	Alpha & Omega Semiconductor Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Diodes Incorporated	onsemi	Vishay Siliconix
Vdss (V)	60	60	60	60	60	60
Configuration	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate
Id @ 25°C (mA)	—	340	350	410	294	305
Rds On (Max) @ Id, Vgs (Ω)	1.6 @ 400mA, 10V	1.6 @ 500mA, 10V	1.6 @ 500mA, 10V	1.8 @ 500mA, 10V	1.6 @ 500mA, 10V	1.4 @ 500mA, 10V
Vgs(th) (Max) @ Id (V)	2.5 @ 250µA	2.1 @ 250µA	2.4 @ 250µA	1.8 @ 250µA	2.5 @ 250µA	2.5 @ 250µA
Ciss (Max) @ Vds (pF)	50 @ 30V	50 @ 10V	50 @ 10V	32 @ 25V	24.5 @ 20V	30 @ 25V
Power - Max (mW)	400	350	330	580	250	250
Operating Temperature (°C)	-55 to 150	to 150	to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
Supplier Device Package	SC-89-6	SOT-666	SOT-666	SOT-563	SOT-563	SC-89 (SOT-563F)
Product Status	Obsolete	Not For New Designs	Not For New Designs	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

For Active Production and New Designs:

DMG1026UV-7 (Diodes Incorporated) and SI1026X-T1-GE3 (Vishay Siliconix) are recommended as primary substitutes. Both devices carry Active product status, ensuring long-term availability and ongoing manufacturer support. DMG1026UV-7 provides the highest power dissipation capability at 580mW and supports continuous drain current of 410mA. SI1026X-T1-GE3 offers the lowest on-state resistance at 1.4 Ohm and maintains full operating temperature range compatibility with the AO5800E.

For Legacy System Support:

NTZD5110NT1G (onsemi) is suitable for applications where power dissipation requirements are lower (250mW) and continuous drain current of 294mA is acceptable. This device maintains Active product status and full temperature range operation.

For Transitional Applications:

2N7002BKV,115 and 2N7002PV,115 (Nexperia USA Inc.) are available as alternatives but carry Not For New Designs status. These devices are suitable only for sustaining existing production runs or legacy system maintenance where design changes are not feasible. Both support 340mA to 350mA continuous drain current with 350mW to 330mW power dissipation.

All substitute parts comply with ROHS3 requirements and maintain REACH Unaffected status, ensuring regulatory compliance across global markets.

Frequently Asked Questions (FAQ)

Q: Can the AO5800E be directly replaced with any of the listed substitutes?

A: Yes, all listed substitute parts meet the electrical and mechanical compatibility criteria for the AO5800E. Direct pin-for-pin replacement is possible within the specified SOT-563 and SOT-666 package families. Verify PCB layout compatibility with the specific package variant selected.

Q: What is the primary difference between DMG1026UV-7 and SI1026X-T1-GE3?

A: DMG1026UV-7 provides higher power dissipation (580mW versus 250mW) and higher continuous drain current (410mA versus 305mA), making it suitable for higher-power applications. SI1026X-T1-GE3 offers lower on-state resistance (1.4 Ohm versus 1.8 Ohm) and lower input capacitance (30pF versus 32pF), providing better switching performance in low-power applications.

Q: Are the Nexperia 2N7002 variants suitable for new designs?

A: The 2N7002BKV,115 and 2N7002PV,115 carry Not For New Designs status. These parts are appropriate only for sustaining existing production or legacy system support. For new designs, select DMG1026UV-7, SI1026X-T1-GE3, or NTZD5110NT1G, which all carry Active product status.

Q: What package options are available for substitution?

A: All substitute parts support both SOT-563 and SOT-666 package options. The AO5800E original part is supplied in SC-89-6 package. SI1026X-T1-GE3 is supplied in SC-89 (SOT-563F) package, which is mechanically equivalent. DMG1026UV-7 and NTZD5110NT1G are supplied in SOT-563. The Nexperia variants are supplied in SOT-666. Verify your PCB footprint compatibility before final selection.

Q: Do all substitutes maintain the same gate threshold voltage?

A: Gate threshold voltages vary across substitutes. The AO5800E specifies 2.5V @ 250µA. NTZD5110NT1G and SI1026X-T1-GE3 match this specification exactly. 2N7002BKV,115 is lower at 2.1V, 2N7002PV,115 is at 2.4V, and DMG1026UV-7 is lower at 1.8V. Lower threshold voltages enable operation with lower gate drive voltages; higher values require higher gate drive. Verify gate drive circuit compatibility with your selected substitute.

Q: What is the moisture sensitivity level for all parts?

A: All parts, including the AO5800E and all substitutes, carry MSL 1 (Unlimited) rating. This indicates unlimited shelf life under normal storage conditions and no special moisture control requirements during handling or assembly.

Q: Are there compliance or certification differences between substitutes?

A: The Nexperia variants (2N7002BKV,115 and 2N7002PV,115) carry AEC-Q101 automotive qualification. All other substitutes do not list automotive qualification. All parts comply with ROHS3 requirements and carry REACH Unaffected status. Select based on your application's automotive or industrial qualification requirements.

Q: Which substitute offers the best on-state resistance performance?

A: SI1026X-T1-GE3 provides the lowest on-state resistance at 1.4 Ohm @ 500mA, 10V. This reduces conduction losses and heat generation in switching applications. DMG1026UV-7 is slightly higher at 1.8 Ohm. The remaining substitutes match or approach the AO5800E specification of 1.6 Ohm.

Q: Can I use NTZD5110NT1G in high-power applications?

A: NTZD5110NT1G is limited to 250mW maximum power dissipation and 294mA continuous drain current, making it unsuitable for applications requiring the full 400mW capability of the AO5800E. For high-power applications, select DMG1026UV-7 (580mW, 410mA) or SI1026X-T1-GE3 (250mW, 305mA) depending on your specific power requirements.

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