AO4914_101 Equivalent & Substitute Parts

Part Overview

The AO4914_101 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage and 8A continuous drain current in an 8-SOIC surface mount package. This component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. The part operates across the industrial temperature range of -55°C to 150°C and is suitable for switching and amplification applications requiring dual-channel MOSFET functionality.

Substiute Parts

AO4914_101
Alpha & Omega Semiconductor Inc.In Stock: 714AO4914_101 Datasheet
AO4914_101
Current Part
SI4214DDY-T1-E3
Vishay SiliconixIn Stock: 15329SI4214DDY-T1-E3 Datasheet
SI4214DDY-T1-E3
Direct
SI4214DDY-T1-GE3
Vishay SiliconixIn Stock: 45364SI4214DDY-T1-GE3 Datasheet
SI4214DDY-T1-GE3
Direct
DMG4822SSD-13
Diodes IncorporatedIn Stock: 23186DMG4822SSD-13 Datasheet
DMG4822SSD-13
MFR Recommended
FDS8978
onsemiIn Stock: 18384FDS8978 Datasheet
FDS8978
MFR Recommended
FDS8984
onsemiIn Stock: 27879FDS8984 Datasheet
FDS8984
MFR Recommended
NTMD4820NR2G
onsemiIn Stock: 15464NTMD4820NR2G Datasheet
NTMD4820NR2G
MFR Recommended
SH8KA4TB
Rohm SemiconductorIn Stock: 1432SH8KA4TB Datasheet
SH8KA4TB
MFR Recommended
SI4804CDY-T1-E3
Vishay SiliconixIn Stock: 3714SI4804CDY-T1-E3 Datasheet
SI4804CDY-T1-E3
MFR Recommended
SI4808DY-T1-E3
Vishay SiliconixIn Stock: 2585SI4808DY-T1-E3 Datasheet
SI4808DY-T1-E3
MFR Recommended
STS10DN3LH5
STMicroelectronicsIn Stock: 80176STS10DN3LH5 Datasheet
STS10DN3LH5
MFR Recommended
STS8DN3LLH5
STMicroelectronicsIn Stock: 15280STS8DN3LLH5 Datasheet
STS8DN3LLH5
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 8 A
On-Resistance (Rds On) @ 8A, 10V 20.5 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.4 V
Gate Charge (Qg) @ 10V 18 nC
Input Capacitance (Ciss) @ 15V 865 pF
Maximum Power Dissipation 2 W
Operating Temperature Range -55 to 150 °C
Configuration 2 N-Channel (Dual)
Package Type 8-SOIC
Mounting Type Surface Mount
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the AO4914_101 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-source voltage rating of 30V (exact match required)
  • Dual N-channel configuration (2 N-Channel)
  • Surface mount package type (8-SOIC or equivalent 8-pin SOIC footprint)
  • Operating temperature range of -55°C to 150°C (minimum requirement)
  • Moisture sensitivity level of 1 (unlimited)

Secondary Compatibility Parameters:

  • Continuous drain current: 7A or greater at 25°C
  • On-resistance (Rds On): 23 mOhm or lower at rated conditions
  • Gate threshold voltage: 2.4V to 3V range
  • Gate charge: 26 nC or lower at 10V
  • Input capacitance: 1270 pF or lower at 15V

Substitute parts meeting all primary criteria and maintaining compatibility within secondary parameter ranges are classified as direct functional equivalents. Parts exceeding specified current or power ratings provide enhanced performance margins. Parts with lower current ratings or higher on-resistance values are listed for reference but represent reduced performance alternatives.

Parameter Comparison

Manufacturer Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Qg (nC) Ciss (pF) Power Max (W) Package Status
AO4914_101 Alpha & Omega Semiconductor Inc. 30 8 20.5 2.4 18 865 2 8-SOIC Obsolete
SI4214DDY-T1-E3 Vishay Siliconix 30 8.5 19.5 2.5 22 660 3.1 8-SOIC Active
SI4214DDY-T1-GE3 Vishay Siliconix 30 8.5 19.5 2.5 22 660 3.1 8-SOIC Active
DMG4822SSD-13 Diodes Incorporated 30 10 20 3 10.5 478.9 1.42 8-SOIC Active
FDS8978 onsemi 30 7.5 18 2.5 26 1270 1.6 8-SOIC Obsolete
FDS8984 onsemi 30 7 23 2.5 13 635 1.6 8-SOIC Active
NTMD4820NR2G onsemi 30 4.9 20 3 7.7 940 0.75 8-SOIC Active
SH8KA4TB Rohm Semiconductor 30 9 21.4 2.5 15.5 640 3 8-SOIC Not For New Designs
SI4804CDY-T1-E3 Vishay Siliconix 30 8 22 2.4 23 865 3.1 8-SOIC Active
SI4808DY-T1-E3 Vishay Siliconix 30 5.7 22 0.8 20 1.1 8-SOIC Active
STS10DN3LH5 STMicroelectronics 30 10 21 1 4.6 475 2.5 8-SOIC Not For New Designs

Engineering Selection Recommendations

Primary Recommendation for Active Production:

The SI4214DDY-T1-GE3 (Vishay Siliconix) is the preferred substitute for the obsolete AO4914_101. This part maintains exact voltage and package specifications while providing enhanced performance characteristics. The SI4214DDY-T1-GE3 is actively manufactured, ROHS3 compliant, and available in high inventory quantities (45,300 units). The electrical parameters are closely matched to the original part, with marginally improved on-resistance (19.5 mOhm vs. 20.5 mOhm) and higher power dissipation capability (3.1W vs. 2W). Both the SI4214DDY-T1-E3 and SI4214DDY-T1-GE3 variants are functionally equivalent; selection between them depends on supplier availability and packaging requirements.

Secondary Recommendations:

The SI4804CDY-T1-E3 (Vishay Siliconix) provides an exact electrical match to the AO4914_101, with identical gate threshold voltage (2.4V) and input capacitance (865 pF). This part is actively produced and ROHS3 compliant, offering superior power dissipation (3.1W) for thermally demanding applications.

The DMG4822SSD-13 (Diodes Incorporated) offers the highest continuous drain current rating (10A) among available substitutes, providing significant performance margin. This part is actively manufactured and ROHS3 compliant. The higher gate threshold voltage (3V) and lower input capacitance (478.9 pF) may require circuit evaluation in gate-drive-sensitive applications.

The STS10DN3LH5 (STMicroelectronics) provides 10A continuous drain current capability and is marked as "Not For New Designs," limiting its suitability for new production despite active inventory availability.

Not Recommended for New Designs:

The FDS8978 and SH8KA4TB are classified as obsolete or "Not For New Designs" respectively and should not be selected for new production programs.

The NTMD4820NR2G has reduced continuous drain current (4.9A) and power dissipation (0.75W), making it unsuitable as a direct replacement for the 8A-rated AO4914_101.

The SI4808DY-T1-E3 has reduced continuous drain current (5.7A) and power dissipation (1.1W), limiting its applicability to lower-current circuit designs.

Frequently Asked Questions (FAQ)

Q: Can the SI4214DDY-T1-GE3 be used as a direct drop-in replacement for the AO4914_101?

A: Yes. Both parts share identical voltage ratings (30V), dual N-channel configuration, 8-SOIC package footprint, and operating temperature range (-55°C to 150°C). The SI4214DDY-T1-GE3 provides improved electrical performance with lower on-resistance and higher power dissipation capability. No circuit modifications are required.

Q: What is the difference between SI4214DDY-T1-E3 and SI4214DDY-T1-GE3?

A: Both variants are electrically identical with matching electrical specifications. The difference lies in packaging and supplier designation. Selection should be based on supplier availability and internal part numbering systems. Both are actively manufactured and ROHS3 compliant.

Q: Why is the DMG4822SSD-13 rated for 10A when the AO4914_101 is rated for 8A?

A: The DMG4822SSD-13 has a higher continuous drain current rating due to superior semiconductor design and thermal characteristics. This higher rating provides additional performance margin and thermal headroom in the application circuit. The part remains compatible with circuits designed for 8A operation.

Q: Can I use the NTMD4820NR2G as a substitute?

A: The NTMD4820NR2G is not recommended as a direct substitute. Its continuous drain current rating (4.9A) and power dissipation (0.75W) are significantly lower than the AO4914_101 (8A, 2W). This part is suitable only for applications with reduced current requirements.

Q: Are all substitute parts ROHS3 compliant?

A: The active production substitutes (SI4214DDY-T1-E3, SI4214DDY-T1-GE3, DMG4822SSD-13, FDS8984, SI4804CDY-T1-E3, SI4808DY-T1-E3, and STS10DN3LH5) are all ROHS3 compliant. The obsolete FDS8978 is also ROHS3 compliant but should not be selected for new designs.

Q: What is the significance of the "Not For New Designs" status?

A: Parts marked "Not For New Designs" are in mature or declining production phases. While inventory may be available, manufacturers do not recommend their use in new product development. These parts should be reserved for legacy product support only.

Q: Do all substitute parts have the same gate threshold voltage as the AO4914_101?

A: No. The AO4914_101 has a gate threshold voltage of 2.4V. The SI4804CDY-T1-E3 matches this specification exactly. Other substitutes range from 0.8V (SI4808DY-T1-E3) to 3V (DMG4822SSD-13, NTMD4820NR2G). Gate threshold voltage differences may affect gate-drive circuit design and switching characteristics. Verify compatibility with your gate-drive circuit before selection.

Q: What is the impact of different on-resistance values?

A: On-resistance directly affects power dissipation and heat generation. Lower on-resistance values (such as SI4214DDY-T1-E3 at 19.5 mOhm) result in reduced power loss and lower junction temperatures. Higher values (such as FDS8984 at 23 mOhm) increase power dissipation. For applications with tight thermal budgets, lower on-resistance values are preferred.

Q: Are there any package differences between the AO4914_101 and its substitutes?

A: All recommended substitutes use the 8-SOIC package with identical 0.154" (3.90mm) width. The footprint is compatible across all parts. Some suppliers may designate the package as 8-SO or 8-SOP, but these refer to the same physical package with identical pin spacing and dimensions.

Q: What is the moisture sensitivity level, and why does it matter?

A: Moisture sensitivity level (MSL) indicates the component's susceptibility to moisture-induced damage during storage and handling. All listed parts have MSL 1 (Unlimited), meaning they can be stored indefinitely without special moisture control measures. This specification is identical across all substitutes.

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