AO4613 MOSFET N/P-Channel 30V Equivalent & Substitute Parts

Part Overview

The AO4613 is an N and P-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc., designed for surface mount applications in 8-SOIC packaging. This device integrates complementary metal-oxide semiconductor technology with logic level gate operation, rated for 30V drain-to-source voltage and 2W maximum power dissipation across an operating temperature range of -55°C to 150°C.

The AO4613 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET array configuration.

Substiute Parts

AO4613

Alpha & Omega Semiconductor Inc.In Stock: 1353AO4613 Datasheet

Current PartRFQ

IRF9389TRPBF

Infineon TechnologiesIn Stock: 24894IRF9389TRPBF Datasheet

DirectRFQ

DMC3032LSD-13

Diodes IncorporatedIn Stock: 2907DMC3032LSD-13 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AO4613 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 30V minimum
• Configuration: N and P-Channel complementary pair
• FET Feature: Logic Level Gate operation
• Package / Case: 8-SOIC form factor (0.154", 3.90mm Width)
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C minimum
• Technology: MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

• Moisture Sensitivity Level (MSL): 1 (Unlimited) or equivalent
• Power dissipation capability: 2W or greater

The substitute parts listed below meet or exceed all critical matching parameters and maintain functional equivalence within the specified electrical and thermal operating envelope.

Parameter Comparison

Engineering Selection Recommendations

IRF9389TRPBF (Infineon Technologies)

The IRF9389TRPBF is an active product manufactured by Infineon Technologies under the HEXFET® series. This substitute maintains full electrical and mechanical compatibility with the AO4613. The device is RoHS3 compliant and carries REACH Unaffected status, meeting current regulatory requirements. Continuous drain current specifications (6.8A N-channel, 4.6A P-channel) and gate charge characteristics (14nC @ 10V) provide functional equivalence. Inventory availability of 24,795 pieces supports production continuity.

DMC3032LSD-13 (Diodes Incorporated)

The DMC3032LSD-13 is an active product manufactured by Diodes Incorporated. This substitute exceeds the AO4613 specifications in maximum power dissipation (2.5W versus 2W) and continuous drain current (8.1A N-channel, 7A P-channel). The device is RoHS3 compliant and carries REACH Unaffected status. Gate charge (9.2nC @ 10V) is lower than the AO4613, indicating improved switching efficiency. Inventory availability of 2,894 pieces supports production requirements.

Both substitute parts satisfy all critical matching parameters and maintain full compatibility within the specified electrical and thermal operating envelope. Selection between these substitutes is determined by application-specific requirements for current handling capacity, power dissipation margin, and switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can the IRF9389TRPBF or DMC3032LSD-13 be used as direct replacements for the AO4613 in existing designs?

A: Yes. Both substitute parts maintain identical package geometry (8-SOIC, 0.154", 3.90mm Width), drain-to-source voltage rating (30V), configuration (N and P-Channel), and operating temperature range (-55°C to 150°C). Pin-to-pin compatibility is preserved, allowing direct substitution without PCB redesign.

Q: What are the key differences between the IRF9389TRPBF and DMC3032LSD-13?

A: The DMC3032LSD-13 provides higher continuous drain current (8.1A N-channel, 7A P-channel versus 6.8A, 4.6A) and greater maximum power dissipation (2.5W versus 2W). The DMC3032LSD-13 exhibits lower gate charge (9.2nC versus 14nC @ 10V), resulting in faster switching transitions. The IRF9389TRPBF is manufactured by Infineon Technologies under the HEXFET® series designation. Selection depends on application requirements for current capacity and switching speed.

Q: Are there any thermal or reliability considerations when substituting these parts?

A: All three devices share identical operating temperature range (-55°C to 150°C junction temperature) and moisture sensitivity level (MSL 1, Unlimited). The DMC3032LSD-13 provides additional thermal margin through higher power dissipation rating (2.5W). Thermal management design should account for the specific Rds On characteristics of the selected substitute: AO4613 (24mOhm), IRF9389TRPBF (27mOhm), or DMC3032LSD-13 (32mOhm).

Q: Do these substitute parts meet current regulatory compliance requirements?

A: Yes. Both IRF9389TRPBF and DMC3032LSD-13 are RoHS3 compliant and carry REACH Unaffected status. Both devices are classified under ECCN EAR99 and HTSUS 8541.29.0095, matching the regulatory classification of the AO4613.

Q: What is the significance of the logic level gate feature across all three devices?

A: Logic level gate operation indicates that all three devices are designed to switch reliably with gate-source voltage (Vgs) levels compatible with standard digital logic circuits (typically 3.3V to 5V). This feature ensures direct interface capability with microcontroller outputs and digital signal processing circuits without requiring additional gate drive circuitry.

Q: How do the gate charge specifications affect circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The AO4613 requires 15nC @ 10V, while the IRF9389TRPBF requires 14nC and the DMC3032LSD-13 requires 9.2nC. Lower gate charge reduces switching losses and allows faster switching transitions. Gate drive circuit design must supply sufficient current to deliver the required charge within the desired switching time window.

Q: Are there any package or soldering considerations for these 8-SOIC devices?

A: All three devices utilize identical 8-SOIC packaging (0.154", 3.90mm Width) and are surface mount components. Standard reflow soldering processes and PCB land patterns designed for 8-SOIC packages are directly applicable. Moisture sensitivity level (MSL 1, Unlimited) indicates no special moisture control requirements during storage or handling.