AO4448 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AO4448 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 80V drain-to-source voltage with 10A continuous drain current in an 8-SOIC surface mount package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. The part operates across a temperature range of -55°C to 150°C and is suitable for general-purpose switching applications requiring moderate voltage and current ratings.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	80	V
Continuous Drain Current (Id) @ 25°C	10	A
On-Resistance (Rds On) @ 10A, 10V	16	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.2	V
Gate Charge (Qg) @ 10V	34	nC
Input Capacitance (Ciss) @ 40V	2005	pF
Power Dissipation (Max)	3.1	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the AO4448 is determined by electrical and mechanical compatibility within the following criteria:

Primary Substitution Parameters:

Drain-to-Source Voltage (Vdss): Substitute parts must equal or exceed 80V
Continuous Drain Current (Id): Substitute parts must support the application current requirement
On-Resistance (Rds On): Substitute parts must maintain electrical performance within acceptable limits
Package Type: All substitute parts must use 8-SOIC or equivalent 8-SO surface mount packaging
Operating Temperature Range: Substitute parts must cover -55°C to 150°C
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuitry
Gate Charge (Qg): Affects switching speed and drive circuit requirements

The substitute parts listed below meet these criteria and are classified as active products with current manufacturing status and full compliance documentation.

Parameter Comparison

Parameter	AO4448	DMT10H015LSS-13	FDS3572	IRF7493TRPBF	SI4896DY-T1-E3	SI4896DY-T1-GE3	Unit
Manufacturer	Alpha & Omega	Diodes Inc.	onsemi	Infineon	Vishay	Vishay	—
Vdss	80	100	80	80	80	80	V
Id @ 25°C	10	8.3	8.9	9.3	6.7	6.7	A
Rds On @ 10V	16	16	16	15	16.5	16.5	mOhm
Vgs(th) @ 250µA	4.2	3.5	4	4	2	2	V
Qg @ 10V	34	33.3	41	53	41	41	nC
Ciss	2005	1871	1990	1510	—	—	pF
Power Dissipation (Max)	3.1	1.2	2.5	2.5	1.56	1.56	W
Operating Temp Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	8-SOIC	8-SO	8-SOIC	8-SO	8-SOIC	8-SOIC	—
Product Status	Obsolete	Active	Active	Active	Active	Active	—
RoHS Compliance	—	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	—

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

FDS3572 (onsemi) and IRF7493TRPBF (Infineon) provide the closest electrical match to the AO4448. Both devices maintain the 80V Vdss rating, deliver continuous drain currents of 8.9A and 9.3A respectively, and preserve the 16mOhm and 15mOhm on-resistance characteristics. Both are classified as active products with ROHS3 compliance and full manufacturing support. The FDS3572 uses the PowerTrench® technology platform, while the IRF7493TRPBF employs the HEXFET® platform. Both support the full -55°C to 150°C operating temperature range.

Secondary Substitutes (Acceptable with Design Review):

DMT10H015LSS-13 (Diodes Incorporated) offers a higher voltage rating of 100V with 8.3A continuous drain current and maintains 16mOhm on-resistance. This part is active and ROHS3 compliant. The elevated voltage rating provides additional design margin for transient overvoltage conditions. Gate threshold voltage is lower at 3.5V, which may require gate drive circuit verification.

SI4896DY-T1-E3 and SI4896DY-T1-GE3 (Vishay Siliconix) are functionally identical TrenchFET® devices with 80V Vdss and 6.7A continuous drain current. These parts deliver lower power dissipation (1.56W) compared to the AO4448 (3.1W) and feature a lower gate threshold voltage of 2V. Both are active products with ROHS3 compliance. The reduced current rating requires verification that application requirements do not exceed 6.7A continuous operation.

Compliance and Availability:

All substitute parts carry ROHS3 compliance certification and REACH unaffected status. All are classified as active products with current manufacturing support and documented inventory availability. The AO4448 is obsolete and no longer manufactured; substitution is necessary for new production and long-term design support.

Frequently Asked Questions (FAQ)

Q: Can the DMT10H015LSS-13 be used as a direct replacement for the AO4448?

A: The DMT10H015LSS-13 is electrically compatible with the AO4448 for most applications. It maintains the same on-resistance (16mOhm) and operating temperature range (-55°C to 150°C). The higher voltage rating (100V vs. 80V) provides additional margin. However, the lower gate threshold voltage (3.5V vs. 4.2V) requires verification that existing gate drive circuitry can reliably switch the device. The continuous drain current is slightly lower at 8.3A versus 10A, which must be confirmed against application requirements.

Q: What is the difference between the SI4896DY-T1-E3 and SI4896DY-T1-GE3?

A: Both devices are functionally identical N-Channel MOSFETs with 80V Vdss and 6.7A continuous drain current. The primary difference is in REACH documentation status: the SI4896DY-T1-E3 carries full REACH compliance documentation, while the SI4896DY-T1-GE3 has REACH information available upon request. Electrical performance, package type, and operating specifications are identical.

Q: Why do some substitute parts have lower continuous drain current ratings than the AO4448?

A: The SI4896DY-T1-E3 and SI4896DY-T1-GE3 are rated for 6.7A continuous drain current compared to the AO4448's 10A rating. These devices employ advanced TrenchFET® technology that reduces on-resistance and power dissipation, making them suitable for applications where current requirements do not exceed 6.7A. For applications requiring the full 10A capability, the FDS3572 (8.9A) or IRF7493TRPBF (9.3A) are more appropriate selections.

Q: Are all substitute parts available in the same 8-SOIC package?

A: All substitute parts are available in 8-SOIC or equivalent 8-SO surface mount packages with identical 0.154" (3.90mm) width. The packages are mechanically and electrically compatible with existing PCB layouts designed for the AO4448. No board redesign is required for package accommodation.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and gate drive circuit power requirements. The AO4448 has a gate charge of 34nC at 10V. The FDS3572 and Vishay devices have higher gate charge (41nC), while the IRF7493TRPBF has significantly higher gate charge (53nC). Higher gate charge requires more drive current from the gate driver circuit. Existing gate drive circuits must be verified to supply adequate current for the selected substitute part.

Q: Can the AO4448 be replaced with a higher voltage rated device like the DMT10H015LSS-13 without circuit modifications?

A: Yes, the DMT10H015LSS-13 with its 100V Vdss rating can be used in circuits designed for the 80V AO4448 without modifications. The higher voltage rating provides additional safety margin against transient overvoltage. However, gate drive circuit compatibility must be verified due to the lower gate threshold voltage (3.5V vs. 4.2V).

Q: What compliance certifications are important for production use?

A: All active substitute parts carry ROHS3 compliance certification and REACH unaffected status, meeting current environmental and regulatory requirements for electronic component manufacturing and distribution. The AO4448, being obsolete, no longer receives compliance updates or manufacturing support.

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