AO4292 N-Channel MOSFET 100V 8A Equivalent & Substitute Parts

Part Overview

The AO4292 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with 8A continuous drain current in an 8-SOIC surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The AO4292 operates across a temperature range of -55°C to 150°C and is suitable for switching applications requiring moderate current handling in compact form factors.

Substiute Parts

AO4292
Alpha & Omega Semiconductor Inc.In Stock: 39460AO4292 Datasheet
AO4292
Current Part
AO4292E
Alpha & Omega Semiconductor Inc.In Stock: 81148AO4292E Datasheet
AO4292E
Direct
FDS3672
onsemiIn Stock: 108213FDS3672 Datasheet
FDS3672
MFR Recommended
FDS86141
onsemiIn Stock: 7422FDS86141 Datasheet
FDS86141
MFR Recommended
IRF7495TRPBF
Infineon TechnologiesIn Stock: 8156IRF7495TRPBF Datasheet
IRF7495TRPBF
MFR Recommended
IRF7853TRPBF
Infineon TechnologiesIn Stock: 8255IRF7853TRPBF Datasheet
IRF7853TRPBF
MFR Recommended
SI4056DY-T1-GE3
Vishay SiliconixIn Stock: 20196SI4056DY-T1-GE3 Datasheet
SI4056DY-T1-GE3
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8 A (Ta)
Rds On (Max) @ Id, Vgs 23 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.7 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 50V
Power Dissipation (Max) 3.1 W (Ta)
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the AO4292 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
  • Continuous Drain Current (Id): Must support 8A or higher at 25°C
  • On-State Resistance (Rds On): Must not exceed 23 mOhm at rated conditions to maintain thermal performance
  • Gate-Source Voltage (Vgs): Must support ±20V maximum rating
  • Operating Temperature Range: Must span -55°C to 150°C

Mechanical Compatibility Criteria:

  • Package Type: 8-SOIC surface mount form factor
  • Mounting Type: Surface mount only
  • Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for handling consistency
  • Pin Configuration: 8-pin SOIC footprint compatibility

All substitute parts listed maintain these electrical and mechanical parameters within acceptable tolerances for direct replacement in existing designs. Variations in gate charge, input capacitance, and power dissipation are acceptable provided they do not degrade circuit performance or thermal management.

Parameter Comparison

Parameter AO4292 AO4292E FDS3672 FDS86141 IRF7495TRPBF IRF7853TRPBF SI4056DY-T1-GE3
Manufacturer Alpha & Omega Alpha & Omega onsemi onsemi Infineon Infineon Vishay Siliconix
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Vdss (V) 100 100 100 100 100 100 100
Id @ 25°C (A) 8 8 7.5 7 7.3 8.3 11.1
Rds On (Max) @ 10V (mOhm) 23 @ 8A 23 @ 7.5A 23 @ 7A 22 @ 4.4A 18 @ 8.3A 23 @ 15A
Vgs(th) (Max) @ Id (V) 2.7 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA 4.9 @ 100µA 2.8 @ 250µA
Qg (Max) @ 10V (nC) 25 37 16.5 51 39 29.5
Ciss (Max) @ Vds (pF) 1190 @ 50V 2015 @ 25V 934 @ 50V 1530 @ 25V 1640 @ 25V 900 @ 50V
Vgs (Max) (V) ±20 ±20 ±20 ±20 ±20 ±20 ±20
Power Dissipation (Max) (W) 3.1 (Ta) 2.5 (Ta) 2.5 (Ta) 2.5 (Ta) 2.5 (Ta) 2.5 (Ta) / 5.7 (Tc)
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SO 8-SO 8-SOIC
Product Status Obsolete Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: AO4292E

The AO4292E is the direct successor to the AO4292, manufactured by Alpha & Omega Semiconductor Inc. This part maintains identical electrical specifications and package configuration while offering active product status. The AO4292E is ROHS3 compliant and available in Tape & Reel packaging, providing superior supply chain continuity. Selection of the AO4292E eliminates design re-qualification requirements and maintains full compatibility with existing PCB layouts and assembly processes.

Secondary Substitutes: FDS3672, FDS86141, IRF7495TRPBF, IRF7853TRPBF, SI4056DY-T1-GE3

These alternatives are suitable when AO4292E availability is constrained. All substitute parts meet the 100V Vdss and 8-SOIC package requirements. Each part maintains electrical performance within acceptable operating margins:

  • FDS3672 (onsemi): Rated for 7.5A continuous drain current with 23 mOhm Rds On. Suitable for applications where current margin below 8A is acceptable.
  • FDS86141 (onsemi): Rated for 7A continuous drain current with 23 mOhm Rds On and lowest gate charge (16.5 nC). Appropriate for switching applications prioritizing reduced gate drive requirements.
  • IRF7495TRPBF (Infineon): Rated for 7.3A continuous drain current with 22 mOhm Rds On. Infineon HEXFET series provides established reliability in industrial applications.
  • IRF7853TRPBF (Infineon): Rated for 8.3A continuous drain current with 18 mOhm Rds On, offering superior current handling and lower on-state resistance. Recommended for designs requiring enhanced thermal performance.
  • SI4056DY-T1-GE3 (Vishay Siliconix): Rated for 11.1A continuous drain current with 23 mOhm Rds On. Provides highest current capacity and lowest input capacitance (900 pF). Suitable for high-current switching applications requiring minimal gate drive power.

All substitute parts are ROHS3 compliant, carry MSL 1 rating, and operate across the full -55°C to 150°C temperature range. Selection among secondary substitutes depends on specific application requirements for current margin, gate charge, and thermal dissipation characteristics.

Frequently Asked Questions (FAQ)

Q: Can the AO4292E be used as a direct replacement for the AO4292?

A: Yes. The AO4292E is the active production equivalent of the obsolete AO4292. Both parts share identical electrical specifications, gate-source voltage ratings, and 8-SOIC package configuration. No circuit modifications are required for substitution.

Q: What is the primary reason for substituting the AO4292?

A: The AO4292 is classified as obsolete. Substitution is necessary to ensure continued design support, production availability, and compliance with current manufacturing standards. The AO4292E provides seamless replacement with active product status.

Q: Are all listed substitute parts compatible with existing AO4292 PCB layouts?

A: All substitute parts use the 8-SOIC surface mount package with identical 0.154" (3.90mm) width. Pin configurations are compatible for direct PCB footprint replacement. However, IRF7495TRPBF and IRF7853TRPBF use 8-SO packaging, which may require footprint verification despite dimensional similarity to 8-SOIC.

Q: What is the significance of the 100V Vdss rating in substitution?

A: The 100V Vdss rating defines the maximum drain-to-source voltage the MOSFET can withstand. All substitute parts maintain this 100V rating, ensuring compatibility with circuits designed for the AO4292. Substitutes with higher Vdss ratings are acceptable; lower ratings are not.

Q: How does continuous drain current (Id) affect substitution suitability?

A: The AO4292 is rated for 8A continuous drain current at 25°C. Substitute parts with equal or higher Id ratings (8A or greater) provide full compatibility. Parts with lower Id ratings (FDS3672 at 7.5A, FDS86141 at 7A, IRF7495TRPBF at 7.3A) are acceptable only if circuit design margins accommodate reduced current capacity.

Q: What role does on-state resistance (Rds On) play in substitution?

A: Rds On determines power dissipation and thermal performance. The AO4292 specifies 23 mOhm maximum at 8A and 10V gate-source voltage. Substitute parts with equal or lower Rds On values maintain or improve thermal characteristics. IRF7853TRPBF (18 mOhm) and SI4056DY-T1-GE3 (23 mOhm) provide superior or equivalent performance.

Q: Is gate charge (Qg) a critical parameter for substitution?

A: Gate charge affects gate drive circuit requirements and switching speed. The AO4292 specifies 25 nC at 10V. Variations in gate charge among substitutes (ranging from 16.5 nC to 51 nC) are acceptable provided the gate drive circuit can supply sufficient current. Lower gate charge reduces drive power requirements; higher gate charge may require circuit optimization.

Q: What does MSL 1 (Unlimited) moisture sensitivity mean?

A: MSL 1 indicates the component has unlimited shelf life and requires no special moisture control during storage or handling. All listed substitute parts carry MSL 1 rating, ensuring consistent handling procedures and eliminating moisture-related reliability concerns.

Q: Are there differences in operating temperature range among substitute parts?

A: No. All substitute parts, including the AO4292, operate across the identical temperature range of -55°C to 150°C (junction temperature). Temperature performance is equivalent across all options.

Q: What is the difference between Ta and Tc power dissipation ratings?

A: Ta (ambient temperature) represents power dissipation under standard ambient conditions. Tc (case temperature) represents dissipation measured at the component case. SI4056DY-T1-GE3 specifies both: 2.5W (Ta) and 5.7W (Tc), indicating enhanced thermal performance when case temperature is controlled. Other parts specify Ta only.

Q: Why do some substitute parts have higher input capacitance (Ciss)?

A: Input capacitance affects gate drive circuit performance and switching characteristics. The AO4292 specifies 1190 pF at 50V. Substitutes with higher Ciss (such as FDS3672 at 2015 pF and IRF7853TRPBF at 1640 pF) require slightly higher gate drive current but remain compatible with standard gate drive circuits. SI4056DY-T1-GE3 offers lower Ciss (900 pF), reducing gate drive requirements.

Q: Is ROHS3 compliance required for substitution?

A: ROHS3 compliance is not a substitution requirement but indicates adherence to current environmental and manufacturing standards. All active substitute parts are ROHS3 compliant. The obsolete AO4292 does not carry this certification, making ROHS3-compliant substitutes preferable for new designs and production continuity.

Q: Can I substitute an IRF7853TRPBF for an AO4292 in a current-limited application?

A: Yes. The IRF7853TRPBF is rated for 8.3A continuous drain current, exceeding the AO4292's 8A rating. Its lower on-state resistance (18 mOhm versus 23 mOhm) provides improved thermal performance. The 8-SO package is dimensionally compatible with 8-SOIC footprints for direct replacement.

Q: What advantage does SI4056DY-T1-GE3 offer over other substitutes?

A: The SI4056DY-T1-GE3 provides the highest continuous drain current rating (11.1A) and lowest input capacitance (900 pF) among all substitutes. These characteristics make it suitable for high-current switching applications and circuits requiring minimal gate drive power. Its 23 mOhm Rds On matches the AO4292 specification.

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