AO3452 N-Channel MOSFET 30V 4A SOT-23-3 Equivalent & Substitute Parts

Part Overview

The AO3452 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage and 4A continuous drain current in a surface mount SOT-23-3 package. The device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. This reference provides engineering-grade alternatives based on electrical and mechanical parameter compatibility.

Substiute Parts

AO3452
Alpha & Omega Semiconductor Inc.In Stock: 38133AO3452 Datasheet
AO3452
Current Part
AOSS32338C
Alpha & Omega Semiconductor Inc.In Stock: 2764AOSS32338C Datasheet
AOSS32338C
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FDN357N
onsemiIn Stock: 125429FDN357N Datasheet
FDN357N
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PMV37ENEAR
Nexperia USA Inc.In Stock: 393337PMV37ENEAR Datasheet
PMV37ENEAR
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PMV55ENEAR
Nexperia USA Inc.In Stock: 1160PMV55ENEAR Datasheet
PMV55ENEAR
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SI2306-TP
Micro Commercial CoIn Stock: 8236SI2306-TP Datasheet
SI2306-TP
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SI2316BDS-T1-E3
Vishay SiliconixIn Stock: 60217SI2316BDS-T1-E3 Datasheet
SI2316BDS-T1-E3
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SI2316BDS-T1-GE3
Vishay SiliconixIn Stock: 19467SI2316BDS-T1-GE3 Datasheet
SI2316BDS-T1-GE3
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SI2316DS-T1-E3
Vishay SiliconixIn Stock: 22446SI2316DS-T1-E3 Datasheet
SI2316DS-T1-E3
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SI3402-TP
Micro Commercial CoIn Stock: 24046SI3402-TP Datasheet
SI3402-TP
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 4 A
On-State Resistance (Rds On) @ 4A, 10V 52 mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA 1.5 V
Gate Charge (Qg) @ 10V 20 nC
Input Capacitance (Ciss) @ 15V 235 pF
Power Dissipation (Max) 1.4 W
Operating Temperature Range -55 to 150 °C
Package Type SOT-23-3
Mounting Type Surface Mount
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the AO3452 is determined by the following critical parameters:

Primary Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Minimum 30V
  • Continuous Drain Current (Id): Minimum 4A at 25°C
  • Package Type: SOT-23-3 or equivalent surface mount variant
  • Mounting Type: Surface Mount
  • Operating Temperature Range: Minimum -55°C to 150°C

Secondary Compatibility Criteria:

  • On-State Resistance (Rds On): Lower or equivalent values preferred
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Lower values improve switching performance
  • Power Dissipation: Adequate thermal handling capability

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (30V, 4A+ Rating): Parts meeting or exceeding the primary electrical specifications with identical or superior performance characteristics and active product status.

Category B - Functional Alternatives (30V+ Rating, Reduced Current or Enhanced Voltage): Parts with higher voltage ratings or slightly reduced current ratings that function within the application envelope while offering improved performance or availability.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On @ 10V (mOhm) Vgs(th) @ 250µA (V) Qg @ 10V (nC) Ciss @ 15V (pF) Power Diss. (W) Package Status
AO3452 Alpha & Omega 30 4 52 1.5 20 235 1.4 SOT-23-3 Obsolete
AOSS32338C Alpha & Omega 30 4 50 1.5 16 340 1.3 SOT-23-3 Active
SI3402-TP Micro Commercial Co 30 4 55 1.4 4.34 390 0.35 SOT-23 Active
SI2306-TP Micro Commercial Co 30 3.16 65 3 4.5 305 0.75 SOT-23 Active
SI2316BDS-T1-E3 Vishay Siliconix 30 4.5 50 3 9.6 350 1.25 (Ta) / 1.66 (Tc) SOT-23-3 Active
SI2316BDS-T1-GE3 Vishay Siliconix 30 4.5 50 3 9.6 350 1.25 (Ta) / 1.66 (Tc) SOT-23-3 Active
SI2316DS-T1-E3 Vishay Siliconix 30 2.9 50 0.8 7 215 0.7 SOT-23-3 Active
FDN357N onsemi 30 1.9 60 2 5.9 235 0.5 SOT-23-3 Active
PMV37ENEAR Nexperia USA Inc. 60 3.5 49 2.7 13 450 0.71 (Ta) / 8.3 (Tc) TO-236AB Active
PMV55ENEAR Nexperia USA Inc. 60 3.1 60 2.7 19 646 0.478 (Ta) / 8.36 (Tc) TO-236AB Not For New Designs

Engineering Selection Recommendations

Primary Recommendation - Direct Replacement:

The AOSS32338C (Alpha & Omega Semiconductor Inc.) is the optimal direct substitute for the AO3452. This part maintains identical electrical specifications (30V, 4A) with improved on-state resistance (50 mOhm vs. 52 mOhm) and reduced gate charge (16 nC vs. 20 nC). The AOSS32338C is classified as Active product status, ensuring long-term availability and supply chain stability. Both devices are ROHS3 compliant and carry identical moisture sensitivity levels (MSL 1 - Unlimited).

Secondary Recommendations - Functional Equivalents:

The SI2316BDS-T1-E3 and SI2316BDS-T1-GE3 (Vishay Siliconix TrenchFET® series) provide enhanced performance with 4.5A continuous drain current capability at the same 30V rating. These parts feature identical on-state resistance (50 mOhm) and lower gate charge (9.6 nC), resulting in improved switching efficiency. Both variants are Active products with ROHS3 compliance.

The SI3402-TP (Micro Commercial Co) meets the 30V, 4A specification with comparable on-state resistance (55 mOhm). This part is Active and ROHS3 compliant, suitable for applications where the lower power dissipation rating (350 mW) is acceptable.

Alternative for Reduced Current Applications:

The SI2316DS-T1-E3 (Vishay Siliconix) is suitable for applications requiring less than 4A continuous current. This part offers superior gate charge characteristics (7 nC) and lower input capacitance (215 pF), beneficial for high-frequency switching applications.

Not Recommended for New Designs:

The PMV55ENEAR (Nexperia USA Inc.) carries a "Not For New Designs" status and should not be selected for new product development, despite meeting voltage and current specifications.

Voltage-Rated Alternatives:

The PMV37ENEAR (Nexperia USA Inc.) provides a 60V rating with 3.5A capability, suitable for applications requiring higher voltage headroom. This part includes AEC-Q101 automotive qualification and is Active. The FDN357N (onsemi) offers 30V rating with reduced current capability (1.9A) and is appropriate only for lower-current applications.

Frequently Asked Questions (FAQ)

Q: Can the AOSS32338C directly replace the AO3452 without circuit modifications?

A: Yes. The AOSS32338C maintains identical voltage (30V) and current (4A) ratings with superior electrical characteristics. No circuit modifications are required. Both devices use the SOT-23-3 package and share identical pinout configurations.

Q: What is the primary advantage of the SI2316BDS-T1-E3 over the AO3452?

A: The SI2316BDS-T1-E3 provides higher continuous drain current capability (4.5A vs. 4A) at identical voltage rating (30V) with equivalent on-state resistance (50 mOhm). Gate charge is reduced to 9.6 nC, improving switching performance and reducing switching losses in high-frequency applications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant. The AO3452 is also ROHS3 compliant, ensuring environmental regulation consistency across substitution options.

Q: Why is the PMV55ENEAR listed if it is "Not For New Designs"?

A: The PMV55ENEAR is included for reference purposes only, as it appears in the original AO3452 substitute list. This part should not be selected for new product development. The PMV37ENEAR is the recommended Nexperia alternative for applications requiring higher voltage ratings.

Q: What is the difference between SI2316BDS-T1-E3 and SI2316BDS-T1-GE3?

A: Both parts are electrically identical with matching specifications (30V, 4.5A, 50 mOhm Rds On). The designation suffix indicates different manufacturing or packaging variants. Both are Active products suitable for direct substitution.

Q: Can the FDN357N be used as a substitute for the AO3452?

A: The FDN357N is not recommended as a direct substitute due to reduced continuous drain current (1.9A vs. 4A). This part is suitable only for applications requiring less than 2A continuous current. The 30V voltage rating matches, but current capability is insufficient for 4A applications.

Q: What is the significance of the different power dissipation ratings between substitute parts?

A: Power dissipation ratings reflect thermal performance under specified conditions. Lower power dissipation (e.g., SI3402-TP at 350 mW) indicates reduced heat generation, beneficial for thermally constrained applications. Higher ratings (e.g., SI2316BDS-T1-E3 at 1.66W Tc) indicate enhanced thermal capability. Selection depends on application thermal requirements and PCB thermal design.

Q: Are the Nexperia PMV37ENEAR and PMV55ENEAR suitable for non-automotive applications?

A: Yes. Both parts are suitable for general industrial and consumer applications. The AEC-Q101 automotive qualification indicates enhanced reliability and testing rigor, providing additional assurance for any application. The PMV37ENEAR is recommended over PMV55ENEAR due to active product status.

Q: What package variants are available among the substitute parts?

A: Most substitute parts use SOT-23-3 or equivalent surface mount packages (TO-236-3, SC-59). The Nexperia parts (PMV37ENEAR, PMV55ENEAR) use TO-236AB packaging, which is mechanically and electrically compatible with SOT-23-3. All parts are surface mount devices suitable for automated assembly.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., SI3402-TP at 4.34 nC) reduces switching losses and allows faster switching speeds, beneficial for high-frequency applications. Higher gate charge (e.g., PMV55ENEAR at 19 nC) increases switching energy but may provide improved noise immunity in some applications.

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