AO3160 N-Channel MOSFET 600V 40mA Equivalent & Substitute Parts

Part Overview

The AO3160 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 600V drain-to-source voltage with 40mA continuous drain current at 25°C. The device is housed in a SOT-23-3 surface mount package and dissipates a maximum of 1.39W. The AO3160 is classified as Obsolete, necessitating identification of functionally equivalent alternatives for ongoing production and design requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, drain current capability, on-resistance characteristics, and thermal performance while accommodating the same or compatible packaging standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	40	mA
On-Resistance (Rds On) @ 16mA, 10V	500	Ohm
Gate-Source Threshold Voltage (Vgs(th)) @ 8µA	3.2	V
Gate Charge (Qg) @ 10V	1.5	nC
Input Capacitance (Ciss) @ 25V	15	pF
Power Dissipation (Max)	1.39	W
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-3	—
FET Type	N-Channel	—

Substitute Part Grouping Explanation

Substitution eligibility for the AO3160 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 600V
On-Resistance (Rds On) at specified test conditions must not exceed 500 Ohm @ 16mA, 10V
Package type must be SOT-23-3 (TO-236-3, SC-59) for mechanical and thermal compatibility
Operating temperature range must encompass -55°C to 150°C
FET technology must be N-Channel MOSFET (Metal Oxide)
RoHS3 compliance and MSL 1 rating required

Secondary Compatibility Considerations:

Continuous drain current (Id) at 25°C: Substitute parts rated at 21mA or higher satisfy applications requiring ≤40mA
Gate charge (Qg) and input capacitance (Ciss): Lower values indicate improved switching performance; higher values remain functionally compatible
Gate-source threshold voltage (Vgs(th)): Variations within ±20V maximum gate voltage specification are acceptable

Identified Substitute Parts:

AO3160E (Alpha & Omega Semiconductor Inc.) — Direct manufacturer equivalent with identical electrical specifications and packaging
BSS126H6327XTSA2 (Infineon Technologies) — Functionally compatible with reduced gate charge and input capacitance; Active product status
BSS126H6906XTSA1 (Infineon Technologies) — Functionally compatible with reduced gate charge and input capacitance; Not For New Designs status
BSS127H6327XTSA2 (Infineon Technologies) — Functionally compatible with reduced gate charge; Active product status

Parameter Comparison

Parameter	AO3160	AO3160E	BSS126H6327XTSA2	BSS126H6906XTSA1	BSS127H6327XTSA2
Manufacturer	Alpha & Omega	Alpha & Omega	Infineon	Infineon	Infineon
Vdss (V)	600	600	600	600	600
Id @ 25°C (mA)	40	40	21	21	21
Rds On @ 16mA, 10V (Ohm)	500	500	500	500	500
Vgs(th) @ 8µA (V)	3.2	3.2	1.6	1.6	2.6
Qg @ Vgs (nC)	1.5 @ 10V	0.9 @ 10V	2.1 @ 5V	2.1 @ 5V	1.0 @ 10V
Ciss @ 25V (pF)	15	9.5	28	28	28
Power Dissipation (W)	1.39	1.39	0.5	0.5	0.5
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3
Product Status	Obsolete	Not For New Designs	Active	Not For New Designs	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

For Direct Replacement (Existing Designs):

AO3160E is the manufacturer-recommended equivalent, providing identical electrical specifications and thermal performance. Although classified as "Not For New Designs," it serves as the direct functional replacement for existing AO3160 applications. Both parts maintain 1.39W power dissipation and 40mA continuous drain current ratings.

For New Designs and Long-Term Availability:

BSS126H6327XTSA2 and BSS127H6327XTSA2 are both classified as Active products, ensuring long-term availability and supply chain stability. Both devices meet the 600V voltage rating and 500 Ohm on-resistance specification. The reduced continuous drain current rating (21mA vs. 40mA) is acceptable for applications requiring ≤21mA. Both parts are RoHS3 compliant with MSL 1 rating.

Infineon SIPMOS® Series Considerations:

BSS126H6327XTSA2 features Depletion Mode operation with lower gate-source threshold voltage (1.6V), enabling lower drive voltage requirements. BSS127H6327XTSA2 operates in enhancement mode with 2.6V threshold voltage, more closely matching the AO3160 gate drive characteristics. Both Infineon devices exhibit reduced gate charge (1.0–2.1 nC) compared to the AO3160 (1.5 nC), resulting in faster switching performance.

Thermal and Power Dissipation:

Infineon substitute parts are rated for 500mW maximum power dissipation, compared to the AO3160's 1.39W rating. Applications requiring sustained power dissipation above 500mW must retain the AO3160 or AO3160E.

Packaging and Compliance:

All substitute parts are housed in SOT-23-3 packages with identical pinout compatibility. All parts maintain ROHS3 compliance, REACH unaffected status, and EAR99 export classification.

Frequently Asked Questions (FAQ)

Q: Can BSS126H6327XTSA2 or BSS127H6327XTSA2 directly replace AO3160 in existing designs?

A: Electrical substitution is valid for applications requiring ≤21mA continuous drain current. The 600V voltage rating, 500 Ohm on-resistance, and SOT-23-3 package ensure mechanical and electrical compatibility. However, applications requiring the full 40mA rating or 1.39W power dissipation must use AO3160E or retain the original AO3160.

Q: What is the difference between BSS126H6327XTSA2 and BSS127H6327XTSA2?

A: Both devices are Infineon SIPMOS® series MOSFETs with identical voltage, current, and on-resistance ratings. The primary difference is gate-source threshold voltage: BSS126H6327XTSA2 operates in Depletion Mode (1.6V threshold), while BSS127H6327XTSA2 operates in enhancement mode (2.6V threshold). Gate drive circuit compatibility must be verified for the specific application.

Q: Why do Infineon parts show lower power dissipation ratings (500mW vs. 1.39W)?

A: Power dissipation ratings reflect maximum continuous power at specified ambient temperature. The 500mW rating for Infineon devices is a conservative specification for the SOT-23-3 package thermal environment. Both part families are thermally compatible in the same package; application thermal design determines actual dissipation limits.

Q: Is AO3160E suitable for new production designs?

A: AO3160E is classified as "Not For New Designs" by the manufacturer. For new production, BSS126H6327XTSA2 or BSS127H6327XTSA2 are preferred due to Active product status and guaranteed long-term availability.

Q: What is the impact of different gate charge (Qg) specifications?

A: Gate charge affects switching speed and gate drive power requirements. Lower gate charge (BSS127H6327XTSA2 at 1.0 nC) results in faster switching and reduced drive circuit power consumption compared to higher gate charge devices. This difference is negligible in low-frequency applications but becomes significant in high-frequency switching circuits.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. AO3160E, BSS126H6327XTSA2, BSS126H6906XTSA1, and BSS127H6327XTSA2 are all RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, meeting environmental and reliability standards for industrial and commercial applications.

Q: Can BSS126H6906XTSA1 be used in new designs?

A: BSS126H6906XTSA1 is classified as "Not For New Designs." Although electrically equivalent to BSS126H6327XTSA2, the latter is the preferred Active product variant for new production applications.

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